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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF820SPBF

Name: IRF820SPBF
Brand: Vishay Siliconix
SKU: IRF820SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF820SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF820SPBF.pdf

Description:: MOSFET N-CH 500V 2.5A D2PAK

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Product details

Overview

IRF820SPBF from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switch-mode power supplies, AC motor controls, and DC-DC converters requiring ruggedized surface-mount switching.

For engineers reviewing the IRF820SPBF datasheet, IRF820SPBF pinout, IRF820SPBF application, or IRF820SPBF equivalent, this page delivers verified electrical parameters, thermal derating data, diode recovery characteristics, and real-world design context for high-reliability industrial power conversion.

Technical Context

This third-generation power MOSFET uses planar VDMOS technology optimized for fast switching and low conduction loss. Its 500 V drain-source breakdown voltage supports off-line applications, while the 2.5 Ω internal source inductance and 4.5 nH drain inductance are characterized for accurate snubber design and EMI prediction.

The device integrates a robust body diode with 260–520 ns reverse recovery time and 0.70–1.4 μC Q_rr, enabling reliable operation in hard-switched topologies. Thermal resistance of 2.5 °C/W (junction-to-case) and 40 °C/W (PCB mount) defines its thermal envelope under continuous and pulsed load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports universal-input offline SMPS without voltage derating
R_DS(on)	3.0 Ω @ V_GS = 10 V - enables <2.5 W conduction loss at 1.5 A DC
Q_g	24 nC - determines gate drive power and switching speed in 100–500 kHz designs
I_D (continuous)	2.5 A @ T_C = 25 °C - usable up to 1.6 A at 100 °C case temperature
E_AS	210 mJ - allows unclamped inductive switching without external snubbers
dV/dt rating	3.5 V/ns - ensures immunity to parasitic turn-on in high-dV/dt environments
T_J range	−55 to +150 °C - qualified for industrial and extended-temperature motor control

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically and thermally connected to the die backside.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; 3.3 nC gate-source charge enables low-drive-current operation
D (Drain)	High-side switched output	Connected to exposed copper pad; carries full load current and dissipates heat directly to PCB
S (Source)	Power return reference	Provides common return path; 7.5 nH internal inductance impacts high-speed switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under transient overloads without external clamping
Dynamic dV/dt rating	3.5 V/ns immunity prevents false triggering in noisy high-voltage circuits
Fast switching	8 ns turn-on delay + 8.6 ns rise time supports >200 kHz PWM frequencies
Low R_DS(on) × Q_g figure-of-merit	72 Ω·nC - balances conduction and switching losses in medium-frequency converters
Surface-mount D2PAK	2.0 W typical power dissipation on FR-4 PCB; compatible with automated reflow assembly

Applications

Switch-Mode Power Supply	AC Motor Control
Use Scenario: Primary-side switch in 20–60 W offline flyback converter operating at 65 kHz. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with synchronous rectification timing constraints. Use Value: 210 mJ single-pulse avalanche energy absorbs transformer leakage spikes without snubber redesign.	Use Scenario: Half-bridge leg in 1/4 HP single-phase AC induction motor driver. IC Role / Device Role / Timing Role: Low-side switching element controlling phase current commutation at 1–5 kHz PWM. Use Value: 2.5 A continuous current rating and 150 °C max junction temperature support sealed enclosure thermal limits.
DC-DC Converter	Lighting Ballast
Use Scenario: Step-down switch in 24 V input, 5 V/3 A isolated forward converter for industrial I/O modules. IC Role / Device Role / Timing Role: Main power transistor synchronized to 200 kHz controller with tight dead-time control. Use Value: 24 nC total gate charge enables efficient drive with 1 A peak gate driver ICs like UCC3732x.	Use Scenario: Resonant half-bridge switch in electronic CFL ballast driving 22 W lamp at 40–60 kHz. IC Role / Device Role / Timing Role: High-frequency switching element managing zero-voltage switching transitions. Use Value: 260–520 ns body diode t_rr and low Q_rr minimize capacitive turn-on losses during ZVS transitions.

Switch-Mode Power Supply

AC Motor Control

Use Scenario: Primary-side switch in 20–60 W offline flyback converter operating at 65 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with synchronous rectification timing constraints.

Use Value: 210 mJ single-pulse avalanche energy absorbs transformer leakage spikes without snubber redesign.

Use Scenario: Half-bridge leg in 1/4 HP single-phase AC induction motor driver.

IC Role / Device Role / Timing Role: Low-side switching element controlling phase current commutation at 1–5 kHz PWM.

Use Value: 2.5 A continuous current rating and 150 °C max junction temperature support sealed enclosure thermal limits.

DC-DC Converter

Lighting Ballast

Use Scenario: Step-down switch in 24 V input, 5 V/3 A isolated forward converter for industrial I/O modules.

IC Role / Device Role / Timing Role: Main power transistor synchronized to 200 kHz controller with tight dead-time control.

Use Value: 24 nC total gate charge enables efficient drive with 1 A peak gate driver ICs like UCC3732x.

Use Scenario: Resonant half-bridge switch in electronic CFL ballast driving 22 W lamp at 40–60 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element managing zero-voltage switching transitions.

Use Value: 260–520 ns body diode t_rr and low Q_rr minimize capacitive turn-on losses during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, 1.2 Ω R_DS(on), TO-220FP package	Higher current, lower R_DS(on), but through-hole mounting and higher gate charge (34 nC)	Preferred where higher current headroom and through-hole assembly are acceptable
IXTP50N10P	100 V, 50 A, 0.022 Ω R_DS(on), TO-220 package	Lower voltage rating, much higher current, unsuitable for 400 V bus applications	Only viable in low-voltage (<150 V) high-current motor drives-not a functional replacement

Compared with STP5NK50ZFP and IXTP50N10P, the IRF820SPBF offers optimal trade-off between voltage capability, surface-mount compatibility, and gate drive simplicity for 20–60 W industrial power stages-where D2PAK thermal performance and 3.5 V/ns dV/dt immunity outweigh raw current or R_DS(on) advantages.

Availability

IRF820SPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, AC motor controls, and DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRF820SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF820SPBF belongs to Vishay's third-generation power MOSFET family engineered for ruggedized, cost-effective switching in high-voltage industrial power conversion-emphasizing avalanche robustness, surface-mount thermal efficiency, and consistent parametric distribution.

FAQ

What is the maximum continuous drain current rating for IRF820SPBF at 100 °C case temperature?

The IRF820SPBF has a maximum continuous drain current of 1.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package when mounted on standard FR-4 PCBs. At 25 °C case temperature, the rating increases to 2.5 A. Designers must verify junction temperature using R_thJC = 2.5 °C/W and actual power dissipation to ensure safe operation within the −55 to +150 °C T_J range.

Does IRF820SPBF support logic-level gate drive?

No, IRF820SPBF is not a logic-level MOSFET. Its gate-threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it requires 10 V gate drive to achieve the specified 3.0 Ω R_DS(on). The datasheet does not guarantee full enhancement below 5 V, and operation at 3.3 V logic levels will result in significantly higher on-resistance and thermal stress. For true logic-level alternatives, consider Vishay's SiHF5N50E or similar 5 V-rated devices.

What is the body diode reverse recovery charge (Q_rr) of IRF820SPBF and why does it matter?

The IRF820SPBF body diode has a reverse recovery charge (Q_rr) of 0.70–1.4 μC, measured at T_J = 25 °C, I_F = 2.1 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses and EMI in hard-switched topologies-higher Q_rr increases turn-on losses in the complementary switch and generates voltage spikes. In flyback or forward converters, Q_rr influences snubber sizing and transformer reset behavior, making it critical for efficiency and reliability validation.

Can IRF820SPBF be paralleled with identical units for higher current capacity?

Yes, IRF820SPBF is explicitly designed for ease of paralleling, as noted in its features list. Its positive temperature coefficient of R_DS(on) (confirmed by normalized on-resistance vs. temperature curve) ensures current sharing stability across multiple devices. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to damp oscillation. Thermal coupling via shared heatsink or copper pour further improves balance, especially in high-current DC-DC or motor drive applications.

What is the peak diode recovery dV/dt rating for IRF820SPBF and how is it tested?

The IRF820SPBF has a peak diode recovery dV/dt rating of 3.5 V/ns, tested per the circuit in Figure 14 of the datasheet using controlled duty factor, gate resistor tuning, and current sampling. This rating quantifies the device's immunity to parasitic turn-on during body diode commutation-critical in bridge configurations where rapid voltage transients across the off-state device could trigger unintended conduction. Exceeding 3.5 V/ns risks shoot-through and must be mitigated via gate resistor optimization or active clamping.

IRF820SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF820SPBF FAQ

1.How can I place an order for IRF820SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF820SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF820SPBF reliable?

The price and inventory of IRF820SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820SPBF is usually 5 days.

3.What payment methods are accepted for IRF820SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF820SPBF?

IRF820SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF820SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF820SPBF?

For technical support, including IRF820SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820SPBF requirements.

6.How does Aetrix verify that IRF820SPBF is sourced from the original manufacturer or authorized distributors?

All IRF820SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820SPBF meets industry standards.

7.What is the process for return or replacement of IRF820SPBF?

All IRF820SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF820SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF820SPBF part is unused and in its original packaging.

Return procedure for IRF820SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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