Vishay Siliconix IRF820STRRPBF
- Part No.:
- IRF820STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF820STRRPBF.pdf
- Description:
- MOSFET N-CH 500V 2.5A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:1,536
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Product details
Overview
IRF820STRRPBF from Vishay Siliconix is a 500 V, 2.5 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 3.0 Ω RDS(on) at VGS = 10 V, 24 nC total gate charge, and repetitive avalanche rating-designed for high-voltage flyback and offline SMPS primary-side switching.
For engineers reviewing the IRF820STRRPBF datasheet, IRF820STRRPBF pinout, IRF820STRRPBF application, or IRF820STRRPBF equivalent, this part supports stable high-voltage DC-DC conversion with fast switching (8 ns turn-on delay), rugged unclamped inductive switching capability (210 mJ EAS), and PCB-mount thermal performance up to 3.1 W.
Technical Context
This third-generation power MOSFET uses planar VDMOS technology optimized for high-voltage switching with low conduction loss and controlled dV/dt behavior. Its 500 V VDS rating and 2.5 A continuous drain current enable use in universal-input AC-DC adapters and auxiliary power supplies.
The device integrates a fast-recovery body diode (trr = 260–520 ns, Qrr = 0.70–1.4 μC) and exhibits dynamic dV/dt immunity up to 3.5 V/ns-critical for reliable operation in discontinuous conduction mode (DCM) flyback topologies without snubber networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports universal AC input (85–265 VAC) with sufficient margin for voltage spikes in offline converters |
| RDS(on) | 3.0 Ω @ VGS = 10 V - enables low conduction loss at 2.5 A, suitable for <15 W primary-side switch applications |
| Qg | 24 nC - determines gate drive power requirement; compatible with standard PWM controllers like UC384x series |
| EAS | 210 mJ - allows safe single-pulse avalanche operation during transformer leakage energy dissipation |
| tr/tf | 8.6 ns / 16 ns - supports >100 kHz switching frequencies with minimal overlap loss in hard-switched topologies |
| TJ Range | −55 °C to +150 °C - ensures reliability across industrial ambient conditions and internal self-heating |
| RthJC | 2.5 °C/W - enables efficient heat transfer to heatsink or copper pour, critical for sustained 2.5 A operation |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G-D-S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; 3.3 nC Qgs enables fast turn-on with low driver stress |
| D (Drain) | High-voltage output node | Connected to primary winding of flyback transformer; rated for 500 V blocking and 8 A pulsed current |
| S (Source) | Power return/reference | Forms common reference for gate drive and current sensing; body diode anode tied internally to source |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation under transient overloads without derating; EAR = 5.0 mJ supports repeated line surges |
| Dynamic dV/dt rating | 3.5 V/ns immunity prevents false turn-on during high-slew-rate switching transitions in noisy SMPS environments |
| Fast switching | 8 ns td(on) and 16 ns tf reduce switching losses, improving efficiency in 65–130 kHz flyback designs |
| Low Qgd/Qgs ratio | 13 nC / 3.3 nC ≈ 3.9 - improves Miller immunity and reduces risk of shoot-through in half-bridge configurations |
| PCB-mount power dissipation | 3.1 W at TA = 25 °C - achievable with 1"² FR-4 copper area, eliminating need for external heatsink in low-power adapters |
Applications
| Offline AC-DC Adapters | Flyback Power Supplies |
|---|---|
Use Scenario: Universal-input (85–265 VAC) 12 V/1 A wall adapter for consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer in DCM flyback topology. Use Value: 500 V VDS and 210 mJ EAS ensure safety margin against line transients; 3.0 Ω RDS(on) limits conduction loss to <200 mW at full load. | Use Scenario: Isolated 5 V/2 A auxiliary supply in industrial PLC power architecture. IC Role / Device Role / Timing Role: Main switching element in self-oscillating or controller-driven flyback converter operating at 100 kHz. Use Value: Fast 8.6 ns rise time and 24 nC Qg allow clean square-wave drive with minimal gate driver overhead; body diode trr < 520 ns minimizes reverse recovery loss. |
| LED Driver Circuits | Industrial Control Power |
Use Scenario: Constant-voltage LED driver for signage with integrated surge protection. IC Role / Device Role / Timing Role: High-side switch regulating bulk capacitor charging and providing overvoltage clamping via avalanche capability. Use Value: Repetitive avalanche rating (EAR = 5.0 mJ) absorbs repeated lightning-induced surges on AC input lines without failure. | Use Scenario: Auxiliary 24 V supply for sensor interface modules in factory automation systems. IC Role / Device Role / Timing Role: Primary switch in compact, convection-cooled flyback delivering isolated bias rails for microcontrollers and analog front-ends. Use Value: −55 °C to +150 °C operating range and 2.5 °C/W RthJC support reliable operation in sealed enclosures with limited airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.4 A, RDS(on) = 1.4 Ω, Qg = 22 nC, TO-220FP package | Higher current rating but through-hole; lacks surface-mount thermal advantage and D2PAK footprint compatibility | Select when higher continuous current (>3 A) is required and board space allows through-hole mounting. |
| IXTP2N50D2 | 500 V, 2.0 A, RDS(on) = 3.5 Ω, Qg = 12 nC, TO-220AB package | Lower gate charge but lower current and higher on-resistance; no avalanche rating specified | Choose only for low-duty-cycle, low-stress applications where avalanche robustness is not required. |
Compared with STP5NK50ZFP and IXTP2N50D2, the IRF820STRRPBF offers optimal balance of surface-mount thermal performance (3.1 W PCB mount), verified repetitive avalanche capability, and industry-standard D2PAK footprint-making it preferred for compact, high-reliability offline SMPS where layout density and surge immunity are critical.
Availability
IRF820STRRPBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback power supplies, and industrial control power circuits requiring stable component supply, RoHS-compliant packaging, and long-term lifecycle continuity.
Supply support for IRF820STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF820STRRPBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for cost-sensitive, high-efficiency offline switch-mode power supplies demanding ruggedness, fast switching, and surface-mount thermal performance.
FAQ
What is the maximum continuous drain current for IRF820STRRPBF at 100 °C case temperature?
The IRF820STRRPBF has a maximum continuous drain current of 1.6 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be respected in thermal design to avoid junction overheating beyond 150 °C.
Does IRF820STRRPBF support logic-level gate drive?
No, IRF820STRRPBF is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, and it requires 10 V gate drive to achieve its specified RDS(on) of 3.0 Ω. Driving IRF820STRRPBF with 3.3 V or 5 V logic signals will result in significantly higher on-resistance and excessive conduction loss.
What is the avalanche energy rating for IRF820STRRPBF, and how is it tested?
The IRF820STRRPBF is rated for 210 mJ single-pulse avalanche energy (EAS) and 5.0 mJ repetitive avalanche energy (EAR). EAS is measured under standardized unclamped inductive switching conditions: VDD = 50 V, IAS = 2.5 A, L = 60 mH, Rg = 25 Ω, starting TJ = 25 °C-per Figure 12 in the datasheet.
Can IRF820STRRPBF be used in parallel configurations?
Yes, IRF820STRRPBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing between devices. However, matched gate resistors and symmetrical PCB layout are required to minimize dynamic imbalance; the device's 3.3 nC Qgs and 13 nC Qgd support stable parallel operation up to two units in typical low-power SMPS designs.
What is the thermal resistance from junction to case (RthJC) for IRF820STRRPBF?
The maximum junction-to-case thermal resistance (RthJC) for IRF820STRRPBF is 2.5 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to the D2PAK package with proper soldering to a copper plane and is essential for calculating allowable power dissipation when using an external heatsink or thermal pad.
IRF820STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF820STRRPBF FAQ
1.How can I place an order for IRF820STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF820STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF820STRRPBF reliable?
The price and inventory of IRF820STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF820STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF820STRRPBF?
IRF820STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF820STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF820STRRPBF?
For technical support, including IRF820STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820STRRPBF requirements.
6.How does Aetrix verify that IRF820STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF820STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF820STRRPBF?
All IRF820STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF820STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF820STRRPBF part is unused and in its original packaging.
Return procedure for IRF820STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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