Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830A

Name: IRF830A
Brand: Vishay Siliconix
SKU: IRF830A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF830A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF830A.pdf

Description:: MOSFET N-CH 500V 5A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,909

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF830A from Vishay Siliconix is a 500 V, 5.0 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage switching in SMPS topologies including two-transistor forward and full-bridge converters. It features 1.4 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 230 mJ single-pulse avalanche energy - enabling robust unclamped inductive switching in industrial power supplies.

For engineers reviewing the IRF830A datasheet, IRF830A pinout, IRF830A application, or IRF830A equivalent, key selection criteria include its 500 V V_DS, 1.4 Ω on-resistance at 10 V drive, 24 nC Q_g, avalanche ruggedness (230 mJ E_AS), and TO-220AB thermal performance (R_thJC = 1.7 °C/W) for reliable high-speed power switching design.

Technical Context

The IRF830A employs a planar vertical DMOS structure with fully characterized avalanche capability and dynamic dV/dt ruggedness up to 5.3 V/ns. Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_g ratio (11/24 nC) support stable hard-switching operation under high dv/dt conditions.

Designed for unclamped inductive switching, the device delivers verified repetitive avalanche current (5.0 A I_AR) and energy (7.4 mJ E_AR) with defined test conditions (L = 18 mH, R_g = 25 Ω). Its C_{oss eff.} of 39 pF enables predictable turn-off timing in high-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus and universal AC-input SMPS
R_DS(on)	1.4 Ω @ V_GS = 10 V - determines conduction loss in continuous 3.0 A load applications
Q_g	24 nC - defines minimum gate driver current requirement for <21 ns rise time at 14 Ω R_g
E_AS	230 mJ - enables safe operation during unclamped inductive turn-off without external snubbers
R_thJC	1.7 °C/W - allows 74 W dissipation at T_C = 25 °C; critical for heatsink sizing in enclosed power modules
V_GS(th)	2.0–4.5 V - ensures reliable enhancement-mode turn-on with standard 10 V gate drivers
C_{oss eff.}	39 pF - fixed capacitance modeling actual V_DS rise from 0 to 400 V; used in snubber and dead-time calculations

Pinout & Package

IRF830A uses the industry-standard TO-220AB package with isolated drain tab (electrically connected to pin 2), facilitating direct mounting to heatsinks without insulating hardware. Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source - confirmed per Vishay S21-0852-Rev. D mechanical drawing and pin diagram.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≤ ±30 V bias; low Q_gs (6.3 nC) eases drive design
Pin 2 (D)	Drain terminal / case tab	High-voltage output node; electrically tied to metal tab - must be insulated from chassis if not referenced to ground
Pin 3 (S)	Source terminal	Return path for load current; referenced to gate drive common; body diode anode

Key Features

Feature	Design Value
Low gate charge (Q_g = 24 nC)	Reduces gate driver power loss and simplifies 10 V logic-level drive without requiring dedicated level shifters
Specified avalanche energy (E_AS = 230 mJ)	Enables elimination of external clamping circuits in flyback and forward converter primary switches
Effective output capacitance (C_{oss eff.} = 39 pF)	Provides accurate prediction of turn-off delay and voltage overshoot in hard-switched topologies
Dynamic dV/dt ruggedness (5.3 V/ns)	Prevents false turn-on during high-speed commutation in bridge configurations with shared gate drivers
Fully characterized body diode (t_rr = 430–650 ns)	Supports synchronous rectification evaluation and informs snubber design for freewheeling paths

Applications

Two-Transistor Forward Converter	Full-Bridge Inverter
Use Scenario: Primary-side switch in isolated DC-DC converters for telecom and server PSUs operating from 375–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage, medium-current main switch handling 5 A peak drain current at 100–500 kHz. Use Value: 500 V V_DS rating and 230 mJ E_AS ensure reliable operation during transformer reset spikes without snubbers.	Use Scenario: Upper and lower quadrant switches in 3–5 kW industrial inverters driving induction heating loads. IC Role / Device Role / Timing Role: Hard-switched power stage element requiring dV/dt immunity and low Q_g for <100 ns dead-time control. Use Value: 5.3 V/ns peak diode recovery dV/dt and 24 nC Q_g minimize shoot-through risk and gate drive losses.
Uninterruptible Power Supply (UPS)	High-Voltage DC-DC Boost Stage
Use Scenario: Battery-to-AC inverter stage in line-interactive UPS systems with 48 V or 120 V battery input. IC Role / Device Role / Timing Role: Output bridge switch sustaining 500 V blocking and conducting 5 A RMS during backup mode. Use Value: R_thJC = 1.7 °C/W and 74 W P_D enable compact heatsinking in space-constrained rack-mount enclosures.	Use Scenario: Boost switch in photovoltaic microinverters stepping up 60–150 V PV string voltage to 400 V DC link. IC Role / Device Role / Timing Role: Medium-frequency (50–100 kHz) high-side switch with unclamped inductive turn-off stress. Use Value: Verified 5.0 A I_AR and 7.4 mJ E_AR allow reliable operation under partial shading-induced current transients.

Two-Transistor Forward Converter

Full-Bridge Inverter

Use Scenario: Primary-side switch in isolated DC-DC converters for telecom and server PSUs operating from 375–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage, medium-current main switch handling 5 A peak drain current at 100–500 kHz.

Use Value: 500 V V_DS rating and 230 mJ E_AS ensure reliable operation during transformer reset spikes without snubbers.

Use Scenario: Upper and lower quadrant switches in 3–5 kW industrial inverters driving induction heating loads.

IC Role / Device Role / Timing Role: Hard-switched power stage element requiring dV/dt immunity and low Q_g for <100 ns dead-time control.

Use Value: 5.3 V/ns peak diode recovery dV/dt and 24 nC Q_g minimize shoot-through risk and gate drive losses.

Uninterruptible Power Supply (UPS)

High-Voltage DC-DC Boost Stage

Use Scenario: Battery-to-AC inverter stage in line-interactive UPS systems with 48 V or 120 V battery input.

IC Role / Device Role / Timing Role: Output bridge switch sustaining 500 V blocking and conducting 5 A RMS during backup mode.

Use Value: R_thJC = 1.7 °C/W and 74 W P_D enable compact heatsinking in space-constrained rack-mount enclosures.

Use Scenario: Boost switch in photovoltaic microinverters stepping up 60–150 V PV string voltage to 400 V DC link.

IC Role / Device Role / Timing Role: Medium-frequency (50–100 kHz) high-side switch with unclamped inductive turn-off stress.

Use Value: Verified 5.0 A I_AR and 7.4 mJ E_AR allow reliable operation under partial shading-induced current transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NB50FP	500 V, 5.0 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-220FP (full-pack) package	Lower R_DS(on) but higher C_iss (750 pF vs. 620 pF); no specified E_AS rating	Preferred where lower conduction loss is prioritized over avalanche safety margin; requires external avalanche protection
IXTH5N50L	500 V, 5.0 A, R_DS(on) = 1.5 Ω, Q_g = 26 nC, TO-247 package, enhanced dV/dt ruggedness (7 V/ns)	Higher package thermal resistance (R_thJC = 1.2 °C/W but larger footprint); no C_{oss eff.} spec	Selected when superior dynamic ruggedness is required in high-noise industrial environments; needs larger PCB area

Compared with STP5NB50FP and IXTH5N50L, the IRF830A provides a balanced trade-off of verified avalanche robustness, industry-standard TO-220AB thermal performance, and tightly specified C_{oss eff.} - making it especially suitable for cost-sensitive, space-constrained SMPS designs requiring proven unclamped inductive switching capability.

Availability

IRF830A is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptable power supply (UPS), and high-speed power switching applications requiring stable component supply across industrial and embedded power system production cycles.

Supply support for IRF830A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific characterization.

The IRF830A belongs to Vishay's legacy high-voltage power MOSFET product line, engineered for robustness in unclamped inductive switching and high-reliability industrial power conversion systems.

FAQ

What is the maximum continuous drain current for the IRF830A at 100 °C case temperature?

The IRF830A supports a continuous drain current of 3.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when heatsink temperature exceeds 25 °C. The IRF830A's R_thJC of 1.7 °C/W and 74 W P_D at 25 °C case define its thermal envelope.

Does the IRF830A have a fully rated avalanche capability, and what are the test conditions?

Yes, the IRF830A is fully characterized for single-pulse avalanche energy (E_AS = 230 mJ) and repetitive avalanche current (I_AR = 5.0 A). Test conditions for E_AS are L = 18 mH, R_g = 25 Ω, and I_AS = 5.0 A, per Figure 12. The IRF830A datasheet confirms these values are measured - not calculated - and apply directly to the IRF830A part number.

What is the gate threshold voltage range for the IRF830A, and how does it affect drive requirements?

The IRF830A has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.5 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. The IRF830A's low Q_g (24 nC) further reduces drive strength requirements compared to higher-Q_g devices.

Is the IRF830A RoHS-compliant, and what does the suffix "-BE3" indicate?

Yes, the IRF830A variant IRF830APbF-BE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard. The "-BE3" suffix specifically denotes tape-and-reel packaging with halogen-free molding compound and Pb-free terminations - confirmed in the Ordering Information table of the IRF830A datasheet.

How does the effective output capacitance (C_{oss eff.}) of the IRF830A differ from standard C_oss, and why is it important?

The IRF830A's C_{oss eff.} = 39 pF is a fixed-value capacitance calibrated to match the actual V_DS rise time from 0 % to 80 % of 400 V - unlike standard C_oss, which varies nonlinearly with voltage. This value enables accurate dead-time and snubber design in hard-switched converters. The IRF830A datasheet explicitly defines C_{oss eff.} per Note c on page 2.

IRF830A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF830A FAQ

1.How can I place an order for IRF830A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830A reliable?

The price and inventory of IRF830A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830A is usually 5 days.

3.What payment methods are accepted for IRF830A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830A?

IRF830A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830A?

For technical support, including IRF830A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830A requirements.

6.How does Aetrix verify that IRF830A is sourced from the original manufacturer or authorized distributors?

All IRF830A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830A meets industry standards.

7.What is the process for return or replacement of IRF830A?

All IRF830A units undergo pre-shipment inspection (PSI). If there is an issue with IRF830A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830A part is unused and in its original packaging.

Return procedure for IRF830A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …