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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830ALPBF

Name: IRF830ALPBF
Brand: Vishay Siliconix
SKU: IRF830ALPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830ALPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF830ALPBF.pdf

Description:: MOSFET N-CH 500V 5A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF830ALPBF from Vishay Siliconix is a 500 V, 5.0 A N-channel power MOSFET in I2PAK (TO-262) package, featuring R_DS(on) ≤ 1.40 Ω at V_GS = 10 V, Q_g = 24 nC, and 230 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS half-bridge topologies.

For engineers reviewing the IRF830ALPBF datasheet, IRF830ALPBF pinout, IRF830ALPBF application, or IRF830ALPBF equivalent, this device supports stable high-dV/dt operation (5.3 V/ns), offers fully characterized C_oss and body diode recovery (t_rr = 430–650 ns), and delivers validated unclamped inductive switching performance up to I_AS = 5.0 A.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for ruggedness in hard-switched converters. Its gate threshold voltage (V_GS(th) = 2.0–4.5 V) ensures reliable turn-on with standard 10 V gate drivers, while low Q_gd/Q_g ratio (11/24 nC) improves switching controllability under high dV/dt conditions.

The device integrates a fast-recovery body diode (Q_rr = 2.0–3.0 μC, t_rr = 430–650 ns) and exhibits specified peak diode recovery dV/dt of 5.3 V/ns - enabling robust operation in flyback and resonant converter freewheeling paths without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % margin for line surges and ringing
R_DS(on) max	1.40 Ω @ V_GS = 10 V - enables <5 W conduction loss at 3.2 A continuous drain current
Q_g max	24 nC - determines gate drive power requirement and switching speed with 14 Ω resistor
E_AS	230 mJ - validates safe unclamped inductive switching at I_AS = 5.0 A, L = 18 mH
t_rr	430–650 ns - defines minimum dead-time needed to prevent shoot-through in bridge configurations
R_thJC	1.7 °C/W - allows 74 W power dissipation with heatsink interface at T_C = 25 °C
I_D cont.	5.0 A @ T_C = 25 °C - derates linearly to 3.2 A at T_C = 100 °C per 0.59 W/°C factor

Pinout & Package

I2PAK (TO-262) package with isolated tab (drain-connected), 3-pin through-hole compatible footprint, 9.65–10.67 mm width, 13.46–14.10 mm length, and 4.06–4.83 mm height - thermal pad optional within E/L1/D1/E1 boundaries per JEDEC MS-013.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; ±30 V absolute max rating prevents gate oxide damage
D (Drain)	High-side power terminal	Connected to internal die backside; electrically tied to exposed tab for thermal conduction
S (Source)	Reference and return path	Provides low-impedance return for load current and gate drive loop; referenced to PCB ground plane

Key Features

Feature	Design Value
Low Q_g	24 nC total gate charge reduces driver IC stress and simplifies gate drive design for 100 kHz+ SMPS
Enhanced dV/dt ruggedness	Rated 5.3 V/ns peak diode recovery dV/dt - suppresses false triggering during high-speed switching transients
Full avalanche characterization	230 mJ single-pulse and 7.4 mJ repetitive avalanche energy - enables reliable operation without external clamping
Effective C_oss	39 pF effective output capacitance - accurately models energy loss during hard-switched turn-on transitions
Body diode Q_rr	2.0–3.0 μC reverse recovery charge - quantifies commutation losses in synchronous rectification and LLC freewheeling

Applications

Offline AC-DC Adapters	Industrial UPS Systems
Use Scenario: 100–240 VAC input, 200–400 VDC bus, 65–100 kHz two-transistor forward or half-bridge converter. IC Role / Device Role / Timing Role: High-side main switch handling primary-side power transfer and voltage regulation. Use Value: 500 V V_DS rating accommodates 385 V nominal bus with 30 % overvoltage margin; 230 mJ E_AS sustains surge events without failure.	Use Scenario: Line-interactive UPS with boost/buck topology operating at 50/60 Hz and 20 kHz PWM switching. IC Role / Device Role / Timing Role: Bidirectional power switch in battery charging/discharging path and inverter stage. Use Value: 5.0 A continuous current and 20 A pulsed rating support 1–2 kVA output; body diode t_rr < 650 ns minimizes cross-conduction risk during mode transitions.
LED Driver Power Stages	Motor Control H-Bridge Legs
Use Scenario: Constant-current LED driver with 350–700 mA output, 48–120 V string voltage, operating in CCM flyback. IC Role / Device Role / Timing Role: Primary-side switching element managing energy storage and transfer timing. Use Value: Low R_DS(on) (1.40 Ω) limits conduction loss below 0.5 W at full load; Q_g = 24 nC enables efficient 100 kHz operation with minimal gate drive loss.	Use Scenario: 24–48 V DC bus, 1–3 A motor phase current, 10–20 kHz PWM-driven brushed DC or stepper motor driver. IC Role / Device Role / Timing Role: Low-side or high-side leg switch in H-bridge configuration controlling direction and braking. Use Value: Fast body diode (t_rr = 430–650 ns) supports efficient regenerative braking; 1.7 °C/W R_thJC enables compact heatsinking in space-constrained enclosures.

Offline AC-DC Adapters

Industrial UPS Systems

Use Scenario: 100–240 VAC input, 200–400 VDC bus, 65–100 kHz two-transistor forward or half-bridge converter.

IC Role / Device Role / Timing Role: High-side main switch handling primary-side power transfer and voltage regulation.

Use Value: 500 V V_DS rating accommodates 385 V nominal bus with 30 % overvoltage margin; 230 mJ E_AS sustains surge events without failure.

Use Scenario: Line-interactive UPS with boost/buck topology operating at 50/60 Hz and 20 kHz PWM switching.

IC Role / Device Role / Timing Role: Bidirectional power switch in battery charging/discharging path and inverter stage.

Use Value: 5.0 A continuous current and 20 A pulsed rating support 1–2 kVA output; body diode t_rr < 650 ns minimizes cross-conduction risk during mode transitions.

LED Driver Power Stages

Motor Control H-Bridge Legs

Use Scenario: Constant-current LED driver with 350–700 mA output, 48–120 V string voltage, operating in CCM flyback.

IC Role / Device Role / Timing Role: Primary-side switching element managing energy storage and transfer timing.

Use Value: Low R_DS(on) (1.40 Ω) limits conduction loss below 0.5 W at full load; Q_g = 24 nC enables efficient 100 kHz operation with minimal gate drive loss.

Use Scenario: 24–48 V DC bus, 1–3 A motor phase current, 10–20 kHz PWM-driven brushed DC or stepper motor driver.

IC Role / Device Role / Timing Role: Low-side or high-side leg switch in H-bridge configuration controlling direction and braking.

Use Value: Fast body diode (t_rr = 430–650 ns) supports efficient regenerative braking; 1.7 °C/W R_thJC enables compact heatsinking in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NB50FP	500 V, 5.5 A, R_DS(on) = 1.2 Ω, TO-220FP package, no avalanche rating published	Lacks specified E_AS and dV/dt ruggedness data - requires external clamping in inductive loads	Prefer IRF830ALPBF where unclamped inductive switching or high dV/dt immunity is required
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, TO-220 package - incompatible voltage rating	Not suitable for 400 V bus applications; only viable in low-voltage (<120 V) motor control	Select IRF830ALPBF for 500 V-class systems; IXTP50N10P is not a functional substitute

Compared with STP5NB50FP, IRF830ALPBF provides verified 230 mJ avalanche capability and 5.3 V/ns dV/dt rating - critical for reliability in offline SMPS. Unlike IXTP50N10P, it meets 500 V system requirements without derating or series stacking.

Availability

IRF830ALPBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial UPS systems, and LED driver power stages requiring stable component supply across extended production lifecycles.

Supply support for IRF830ALPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial and automotive markets.

The IRF830ALPBF belongs to Vishay's high-voltage power MOSFET family engineered for ruggedness in hard-switched offline power conversion - emphasizing avalanche survivability, dV/dt immunity, and body diode performance in SMPS and UPS applications.

FAQ

What is the maximum continuous drain current rating for IRF830ALPBF at 100 °C case temperature?

The IRF830ALPBF has a maximum continuous drain current of 3.2 A at T_C = 100 °C, derived from its 5.0 A rating at 25 °C and linear derating factor of 0.59 W/°C. This value is confirmed in the Absolute Maximum Ratings table and validated by thermal resistance R_thJC = 1.7 °C/W. Designers must ensure heatsink interface maintains case temperature ≤100 °C to sustain this current in IRF830ALPBF-based circuits.

Does IRF830ALPBF support logic-level gate drive?

No, IRF830ALPBF is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.5 V, but it requires V_GS = 10 V to achieve R_DS(on) ≤ 1.40 Ω. The datasheet specifies parameters exclusively at 10 V gate drive, and no performance data is provided for V_GS ≤ 5 V. For true logic-level operation, designers should select devices explicitly rated for 4.5 V or 5 V drive, not IRF830ALPBF.

What is the body diode reverse recovery time (t_rr) specification for IRF830ALPBF?

The IRF830ALPBF body diode reverse recovery time is specified as 430–650 ns under test conditions of T_J = 25 °C, I_F = 5.0 A, and dI/dt = 100 A/μs. This parameter is measured on the integral p-n junction and directly impacts dead-time selection in bridge topologies. The value appears in the "Drain-Source Body Diode Characteristics" section of the datasheet and applies identically to all variants in the IRF830A/SiHF830A family, including IRF830ALPBF.

Is IRF830ALPBF RoHS-compliant and halogen-free?

Yes, IRF830ALPBF is both RoHS-compliant and halogen-free, indicated by the "-GE3" suffix in Vishay's ordering nomenclature. The part uses lead (Pb)-free terminations and conforms to material categorization per Vishay document 99912. This compliance is explicitly stated in the "Ordering Information" table and "Features" section of the datasheet, confirming suitability for environmentally regulated industrial and consumer applications.

How does the effective output capacitance (C_{oss eff.}) of IRF830ALPBF differ from standard C_oss?

The IRF830ALPBF specifies C_{oss eff.} = 39 pF - a fixed capacitance value calibrated to replicate the actual charging time of C_oss while V_DS rises from 0 to 80 % of 400 V. In contrast, standard C_oss varies nonlinearly with voltage (e.g., 886 pF at 1 V, 27 pF at 400 V). C_{oss eff.} is used for accurate turn-on loss calculation in hard-switched converters, and this value is explicitly defined in Note c of the datasheet for IRF830ALPBF and related variants.

IRF830ALPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRF830ALPBF FAQ

1.How can I place an order for IRF830ALPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830ALPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830ALPBF reliable?

The price and inventory of IRF830ALPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830ALPBF is usually 5 days.

3.What payment methods are accepted for IRF830ALPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830ALPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830ALPBF?

IRF830ALPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830ALPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830ALPBF?

For technical support, including IRF830ALPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830ALPBF requirements.

6.How does Aetrix verify that IRF830ALPBF is sourced from the original manufacturer or authorized distributors?

All IRF830ALPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830ALPBF meets industry standards.

7.What is the process for return or replacement of IRF830ALPBF?

All IRF830ALPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF830ALPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830ALPBF part is unused and in its original packaging.

Return procedure for IRF830ALPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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