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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830APBF-BE3

Name: IRF830APBF-BE3
Brand: Vishay Siliconix
SKU: IRF830APBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830APBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF830APBF-BE3.pdf

Description:: MOSFET N-CH 500V 5A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF830APBF-BE3 from Vishay Siliconix is a 500 V, 5.0 A N-channel power MOSFET in TO-220AB package, featuring 1.4 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 230 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS half-bridge topologies.

For engineers reviewing the IRF830APBF-BE3 datasheet, IRF830APBF-BE3 pinout, IRF830APBF-BE3 application, or IRF830APBF-BE3 equivalent, key selection considerations include its 500 V V_DS, 1.4 Ω on-resistance, 24 nC Q_g, avalanche ruggedness, and TO-220AB thermal performance for industrial power conversion designs.

Technical Context

This discrete N-channel enhancement-mode MOSFET operates with a gate threshold voltage of 2.0–4.5 V and supports fast switching via low Q_gd (11 nC) and Q_gs (6.3 nC), enabling efficient hard-switched topologies. Its 5.3 V/ns peak diode recovery dV/dt rating confirms robust body diode commutation capability under high-speed conditions.

The device integrates a co-packaged intrinsic body diode with 430–650 ns reverse recovery time and 1.62–2.4 μC Q_rr, and is characterized for repetitive avalanche operation up to 5.0 A I_AR and 7.4 mJ E_AR, supporting unclamped inductive load handling without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus applications
R_DS(on)	1.4 Ω @ V_GS = 10 V - enables <5 W conduction loss at 5 A continuous drain current
Q_g	24 nC - reduces gate drive power and simplifies 10–15 V logic-level driver selection
E_AS	230 mJ - withstands unclamped inductive energy in flyback or forward converters
T_J Range	−55 °C to +150 °C - qualified for industrial ambient and thermally constrained enclosures
R_thJC	1.7 °C/W - allows 74 W dissipation at 25 °C case temperature with heatsink interface
C_{oss eff.}	39 pF - defines hard-switching losses during turn-on and impacts ZVS feasibility

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.7 °C/W junction-to-case thermal resistance, and 62 °C/W junction-to-ambient (no heatsink).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V drive to fully enhance; 2.0–4.5 V V_GS(th) ensures compatibility with standard PWM controllers
D (Drain)	High-side current path	Connected to TO-220 tab; electrically isolated but thermally coupled-requires insulating washer if mounted to grounded heatsink
S (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and body diode conduction

Key Features

Feature	Design Value
Low Q_g (24 nC)	Reduces gate driver power consumption and enables use of low-cost, low-current gate drivers in high-frequency SMPS
Improved dV/dt ruggedness (5.3 V/ns)	Prevents false turn-on during high dv/dt transients in bridge configurations without added gate resistors
Characterized C_oss & C_{oss eff.}	Enables accurate switching loss estimation and resonant topology design using measured 39 pF effective output capacitance
Specified avalanche energy (230 mJ)	Eliminates need for external clamping circuits in inductive switching applications like motor drives and UPS inverters
Lead (Pb)-free & halogen-free (BE3)	Meets RoHS Directive 2011/65/EU and JEDEC JS709B requirements for environmentally compliant manufacturing

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: High-voltage primary-side switch in 500 W two-transistor forward converter operating from 375 V DC bus. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer via transformer primary winding; duty-cycle modulated at 50–100 kHz. Use Value: 500 V V_DS and 230 mJ E_AS ensure reliable operation during line surges and transformer leakage inductance spikes.	Use Scenario: Half-bridge inverter stage converting 400 V DC battery bank to 230 V AC output in online double-conversion UPS. IC Role / Device Role / Timing Role: High-side and low-side switching element in synchronized square-wave inversion; handles bidirectional body diode conduction during dead-time. Use Value: 430–650 ns trr and 1.62–2.4 μC Q_rr minimize cross-conduction losses and EMI during commutation.
Industrial Motor Drive	DC-DC Isolated Converter
Use Scenario: Inverter leg switch in 1 kW BLDC controller driving 48–72 V DC bus with regenerative braking. IC Role / Device Role / Timing Role: High-side switching device managing phase current direction; subjected to repetitive avalanche during freewheeling. Use Value: 7.4 mJ repetitive avalanche energy rating supports safe operation during frequent inductive flyback events without derating.	Use Scenario: Primary-side switch in 300 W isolated flyback converter powering industrial sensors from 24 V DC input. IC Role / Device Role / Timing Role: Energy storage and transfer switch; turns on/off at 65 kHz with zero-voltage switching assisted by C_{oss eff.}. Use Value: 39 pF C_{oss eff.} enables predictable ZVS timing and reduces turn-on losses below 1.2 W at full load.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: High-voltage primary-side switch in 500 W two-transistor forward converter operating from 375 V DC bus.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer via transformer primary winding; duty-cycle modulated at 50–100 kHz.

Use Value: 500 V V_DS and 230 mJ E_AS ensure reliable operation during line surges and transformer leakage inductance spikes.

Use Scenario: Half-bridge inverter stage converting 400 V DC battery bank to 230 V AC output in online double-conversion UPS.

IC Role / Device Role / Timing Role: High-side and low-side switching element in synchronized square-wave inversion; handles bidirectional body diode conduction during dead-time.

Use Value: 430–650 ns trr and 1.62–2.4 μC Q_rr minimize cross-conduction losses and EMI during commutation.

Industrial Motor Drive

DC-DC Isolated Converter

Use Scenario: Inverter leg switch in 1 kW BLDC controller driving 48–72 V DC bus with regenerative braking.

IC Role / Device Role / Timing Role: High-side switching device managing phase current direction; subjected to repetitive avalanche during freewheeling.

Use Value: 7.4 mJ repetitive avalanche energy rating supports safe operation during frequent inductive flyback events without derating.

Use Scenario: Primary-side switch in 300 W isolated flyback converter powering industrial sensors from 24 V DC input.

IC Role / Device Role / Timing Role: Energy storage and transfer switch; turns on/off at 65 kHz with zero-voltage switching assisted by C_{oss eff.}.

Use Value: 39 pF C_{oss eff.} enables predictable ZVS timing and reduces turn-on losses below 1.2 W at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 22 nC, TO-220FP (full-pack)	Lower I_D rating (4.5 A vs. 5.0 A); same V_DS and R_DS(on); slightly lower Q_g	Preferred where space-constrained layouts require insulated package; requires verification of thermal margin at 5 A continuous
FQP5N50C	500 V, 5.0 A, R_DS(on) = 1.4 Ω, Q_g = 26 nC, TO-220	Higher Q_g increases gate drive loss; no specified E_AS or dV/dt rating in datasheet	Cost-sensitive alternative when avalanche ruggedness and dV/dt immunity are not critical in well-controlled environments

Compared with STP5NK50ZFP and FQP5N50C, the IRF830APBF-BE3 offers verified 230 mJ avalanche energy and 5.3 V/ns dV/dt rating-critical for reliability in unregulated or noisy industrial power stages-while maintaining identical R_DS(on) and V_DS with only marginal Q_g trade-offs.

Availability

IRF830APBF-BE3 is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and industrial motor drive applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF830APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The IRF830A series is part of Vishay's high-voltage power MOSFET product line, engineered for ruggedness and consistency in offline AC-DC conversion, UPS systems, and industrial inverters where avalanche capability and thermal stability are essential.

FAQ

What is the maximum continuous drain current for IRF830APBF-BE3 at 100 °C case temperature?

The IRF830APBF-BE3 supports 3.2 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the TO-220AB package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 1.7 °C/W and actual power dissipation to ensure T_J remains ≤ 150 °C. The IRF830APBF-BE3 datasheet specifies this value under linear derating conditions.

Does IRF830APBF-BE3 have a specified body diode reverse recovery charge (Q_rr)?

Yes, the IRF830APBF-BE3 has a specified body diode reverse recovery charge of 1.62–2.4 μC at T_J = 25 °C, I_F = 5.0 A, and dI/dt = 100 A/μs. This parameter is critical for estimating commutation losses in bridge topologies and is directly measured-not derived-and published in the "Drain-Source Body Diode Characteristics" section of the IRF830APBF-BE3 datasheet.

Is IRF830APBF-BE3 pin-compatible with the legacy IRF830PbF?

Yes, IRF830APBF-BE3 is pin-compatible with IRF830PbF and IRF830APbF: all share identical TO-220AB package, terminal assignment (G-D-S), and mechanical footprint. The BE3 suffix denotes lead-free and halogen-free construction per JEDEC JS709B, with no electrical or thermal performance change versus Pb-free variants. No PCB layout revision is required when upgrading to IRF830APBF-BE3.

What is the gate-source leakage current specification for IRF830APBF-BE3?

The IRF830APBF-BE3 specifies gate-source leakage current (I_GSS) as ±100 nA maximum at V_GS = ±30 V and T_J = 25 °C. This low leakage ensures minimal gate drive current demand and stable biasing in high-impedance gate networks. The value is confirmed in the "Static" section of the IRF830APBF-BE3 datasheet under "Gate-source leakage".

Can IRF830APBF-BE3 be used in zero-voltage switching (ZVS) topologies?

Yes, the IRF830APBF-BE3 supports ZVS operation due to its characterized C_{oss eff.} of 39 pF, which defines the capacitive energy needed for resonant turn-on. Its 24 nC Q_g and 11 nC Q_gd also enable predictable gate timing control. Successful ZVS implementation requires matching external resonant inductance and proper dead-time tuning-verified in IRF830APBF-BE3 application notes for LLC and phase-shifted full-bridge designs.

IRF830APBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF830APBF-BE3 FAQ

1.How can I place an order for IRF830APBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830APBF-BE3 reliable?

The price and inventory of IRF830APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830APBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF830APBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830APBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830APBF-BE3?

IRF830APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830APBF-BE3?

For technical support, including IRF830APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830APBF-BE3 requirements.

6.How does Aetrix verify that IRF830APBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF830APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830APBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF830APBF-BE3?

All IRF830APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF830APBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830APBF-BE3 part is unused and in its original packaging.

Return procedure for IRF830APBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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