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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830AS

Name: IRF830AS
Brand: Vishay Siliconix
SKU: IRF830AS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830AS

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF830AS.pdf

Description:: MOSFET N-CH 500V 5A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF830AS from Vishay Siliconix is a 500 V, 5.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.40 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 230 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS and UPS systems.

For engineers reviewing the IRF830AS datasheet, IRF830AS pinout, IRF830AS application, or IRF830AS equivalent, this page delivers verified electrical specs, thermal resistance (R_thJC = 1.7 °C/W), diode recovery characteristics (t_rr = 430–650 ns), and real-world switching timing (t_d(on) = 10 ns, t_r = 21 ns) to support layout, drive design, and reliability validation.

Technical Context

This device uses planar vertical DMOS technology with fully characterized avalanche capability and dynamic dV/dt ruggedness. Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_g ratio (11/24 = 46%) support stable hard-switching operation under high dV/dt stress up to 5.3 V/ns.

The integrated body diode exhibits 1.5 V forward drop at 5.0 A and 2.0–3.0 μC reverse recovery charge, enabling use in freewheeling paths of bridge topologies without external diode supplementation in moderate-frequency designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25% margin for transient overvoltage
R_DS(on) max	1.40 Ω at V_GS = 10 V - determines conduction loss in continuous current paths up to 3.2 A at T_C = 100 °C
Q_g max	24 nC - defines gate driver current requirement (e.g., 2.4 A peak for 10 ns rise time)
E_AS	230 mJ - enables unclamped inductive switching survival in flyback or forward converters
t_rr	430–650 ns - impacts switching loss and EMI in hard-commutated bridges
R_thJC	1.7 °C/W - allows direct heatsink mounting for thermal management in 74 W P_D operation
I_D cont.	5.0 A at T_C = 25 °C - sets maximum continuous current handling with PCB heatsinking

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) compatible with standard 0.100" pitch footprint per Vishay drawing 91364.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤ ±30 V drive; low input capacitance (C_iss = 620 pF) eases gate driver selection
D	Drain	Main high-voltage terminal; electrically and thermally connected to exposed backside pad; must be isolated from other layers
S	Source	Reference node for gate drive and current sensing; ties to power ground in low-side switch configurations

Key Features

Feature	Design Value
Low Q_g (24 nC)	Reduces gate drive power and simplifies driver IC selection for 50–100 kHz SMPS
High dV/dt ruggedness (5.3 V/ns)	Prevents spurious turn-on during fast voltage transients in half-bridge leg operation
Fully characterized C_{oss eff.} (39 pF)	Enables accurate snubber and resonant timing calculations in LLC or ZVS designs
230 mJ E_AS	Supports reliable operation in inductive load switching without external clamping circuits
RoHS-compliant Pb-free variant	Meets environmental compliance requirements for industrial and telecom equipment

Applications

Offline AC-DC Power Supply	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 50–100 kHz two-transistor forward converter operating from 375 V DC bus derived from rectified 265 V AC. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET performing hard-switched power conversion with synchronous rectification on secondary side. Use Value: 500 V rating provides margin against line surges; 1.40 Ω R_DS(on) limits conduction loss to <1.5 W at 3.2 A RMS load current.	Use Scenario: Inverter-stage switching device in line-interactive UPS delivering 1 kVA output with battery backup. IC Role / Device Role / Timing Role: Half-bridge high-side and low-side switch managing bidirectional energy flow between battery bank and AC output. Use Value: 230 mJ E_AS withstands inductive kickback during transfer switching; 5.3 V/ns dV/dt rating prevents false triggering during rapid bus transitions.
Industrial Motor Drive Inverter	High-Voltage DC-DC Converter
Use Scenario: Low-side switch in 3-phase IGBT/MOSFET inverter driving 0.5–1 kW induction motor at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: Fast-turning N-channel switch controlling phase current commutation with integrated body diode freewheeling. Use Value: 430–650 ns t_rr minimizes cross-conduction loss; 1.5 V V_SD reduces freewheeling voltage drop versus external Schottky solutions.	Use Scenario: Primary switch in isolated 400 V → 48 V DC-DC converter using full-bridge topology for telecom rectifier applications. IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive 20 A pulsed drain current during burst-mode operation. Use Value: 20 A I_DM rating supports peak loads; R_thJC = 1.7 °C/W enables compact heatsink integration in space-constrained rack units.

Offline AC-DC Power Supply

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 50–100 kHz two-transistor forward converter operating from 375 V DC bus derived from rectified 265 V AC.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET performing hard-switched power conversion with synchronous rectification on secondary side.

Use Value: 500 V rating provides margin against line surges; 1.40 Ω R_DS(on) limits conduction loss to <1.5 W at 3.2 A RMS load current.

Use Scenario: Inverter-stage switching device in line-interactive UPS delivering 1 kVA output with battery backup.

IC Role / Device Role / Timing Role: Half-bridge high-side and low-side switch managing bidirectional energy flow between battery bank and AC output.

Use Value: 230 mJ E_AS withstands inductive kickback during transfer switching; 5.3 V/ns dV/dt rating prevents false triggering during rapid bus transitions.

Industrial Motor Drive Inverter

High-Voltage DC-DC Converter

Use Scenario: Low-side switch in 3-phase IGBT/MOSFET inverter driving 0.5–1 kW induction motor at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch controlling phase current commutation with integrated body diode freewheeling.

Use Value: 430–650 ns t_rr minimizes cross-conduction loss; 1.5 V V_SD reduces freewheeling voltage drop versus external Schottky solutions.

Use Scenario: Primary switch in isolated 400 V → 48 V DC-DC converter using full-bridge topology for telecom rectifier applications.

IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive 20 A pulsed drain current during burst-mode operation.

Use Value: 20 A I_DM rating supports peak loads; R_thJC = 1.7 °C/W enables compact heatsink integration in space-constrained rack units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NA50	500 V, 5.0 A, R_DS(on) = 1.5 Ω, Q_g = 22 nC, TO-220 package	Through-hole mounting; higher R_thJA (62 °C/W vs. 40 °C/W) limits ambient-rated power	Select when legacy through-hole assembly or lower gate charge priority outweighs surface-mount thermal advantage
IXTH8N50L	500 V, 8.0 A, R_DS(on) = 0.85 Ω, Q_g = 32 nC, TO-247 package	Higher current rating but larger footprint and greater drive demand; optimized for >100 kHz ZVS	Select when system requires >5 A continuous current or improved conduction efficiency justifies added gate drive complexity

Compared with STP5NA50 and IXTH8N50L, the IRF830AS offers superior thermal performance in surface-mount form factor and balanced gate charge for 50–100 kHz hard-switched topologies, making it optimal for space-constrained offline power supplies where board area and thermal management are critical.

Availability

IRF830AS is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply across industrial and telecom production cycles.

Supply support for IRF830AS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF830AS belongs to Vishay's high-voltage planar MOSFET product line, engineered for robust avalanche performance and stable switching in offline power conversion systems operating up to 150 °C junction temperature.

FAQ

What is the maximum continuous drain current rating for IRF830AS at 100 °C case temperature?

The IRF830AS has a maximum continuous drain current (I_D) of 3.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained power dissipation; operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 150 °C. The IRF830AS datasheet confirms this value under test condition "TC = 100 °C" with no additional ambient or layout assumptions.

Does IRF830AS support logic-level gate drive?

No, the IRF830AS is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.5 V, and it is specified for full enhancement at V_GS = 10 V - requiring a dedicated gate driver or level-shifting circuit when driven from 3.3 V or 5 V microcontrollers. The IRF830AS datasheet explicitly states "V_GS = 10 V" for R_DS(on) and Q_g measurements, confirming standard-level operation.

What is the thermal resistance from junction to case (R_thJC) for IRF830AS?

The IRF830AS has a maximum junction-to-case thermal resistance (R_thJC) of 1.7 °C/W, measured from the silicon die to the exposed drain pad of the D2PAK package. This value enables direct thermal coupling to a heatsink and is critical for calculating temperature rise under 74 W maximum power dissipation. The IRF830AS Thermal Resistance Ratings table lists "R_thJC - MAX. 1.7 °C/W" with no test condition dependency.

Can IRF830AS be used in avalanche mode repeatedly?

The IRF830AS is rated for repetitive avalanche energy (E_AR) of 7.4 mJ, confirmed in the Absolute Maximum Ratings table. While it supports single-pulse avalanche events up to 230 mJ, repeated operation in avalanche requires strict control of pulse width, duty cycle (<2%), and junction temperature to avoid cumulative degradation. The IRF830AS datasheet notes "Repetitive rating; pulse width limited by maximum junction temperature", meaning sustained avalanche use demands thermal modeling and derating - not recommended for primary protection schemes.

What is the body diode reverse recovery charge (Q_rr) for IRF830AS?

The IRF830AS body diode has a reverse recovery charge (Q_rr) of 2.0–3.0 μC, measured at T_J = 25 °C, I_F = 5.0 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in freewheeling applications such as half-bridge inverters. The IRF830AS Specifications table lists Q_rr under "Drain-Source Body Diode Characteristics" with min/max bounds, confirming its relevance to hard-commutated topologies.

IRF830AS Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF830AS FAQ

1.How can I place an order for IRF830AS through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830AS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830AS reliable?

The price and inventory of IRF830AS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830AS is usually 5 days.

3.What payment methods are accepted for IRF830AS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830AS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830AS?

IRF830AS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830AS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830AS?

For technical support, including IRF830AS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830AS requirements.

6.How does Aetrix verify that IRF830AS is sourced from the original manufacturer or authorized distributors?

All IRF830AS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830AS meets industry standards.

7.What is the process for return or replacement of IRF830AS?

All IRF830AS units undergo pre-shipment inspection (PSI). If there is an issue with IRF830AS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830AS part is unused and in its original packaging.

Return procedure for IRF830AS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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