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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830ASPBF

Name: IRF830ASPBF
Brand: Vishay Siliconix
SKU: IRF830ASPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830ASPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF830ASPBF.pdf

Description:: MOSFET N-CH 500V 5A D2PAK

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Product details

Overview

IRF830ASPBF from Vishay Siliconix is a 500 V, 5.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) ≤ 1.40 Ω at V_GS = 10 V, Q_g = 24 nC, and 230 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS half-bridge topologies.

For engineers reviewing the IRF830ASPBF datasheet, IRF830ASPBF pinout, IRF830ASPBF application, or IRF830ASPBF equivalent, key selection criteria include its 500 V V_DS, 1.40 Ω on-resistance at 10 V gate drive, 24 nC total gate charge, rugged dV/dt capability (5.3 V/ns), and TO-263 thermal performance (R_thJC = 1.7 °C/W).

Technical Context

This device uses planar vertical DMOS technology with fully characterized avalanche ratings and effective output capacitance (C_{oss eff.} = 39 pF). Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_g ratio (11/24 ≈ 46%) support stable hard-switching operation under high dV/dt stress.

The integrated body diode exhibits t_rr = 430–650 ns and Q_rr = 2.0–3.0 μC at I_F = 5.0 A, enabling reliable freewheeling in bridge configurations without external snubbing in moderate-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in universal-input AC/DC converters up to 400 V DC bus
R_DS(on) max	1.40 Ω @ V_GS = 10 V - limits conduction loss to ≤ 35 W at 5 A continuous drain current
Q_g max	24 nC - enables gate drive with standard 1 A peak drivers at ≤ 500 kHz switching frequency
E_AS	230 mJ - withstands unclamped inductive switching events in transformer-coupled topologies
t_r/t_f	21 ns / 15 ns - supports fast turn-on/turn-off with minimal overlap loss in hard-switched bridges
R_thJC	1.7 °C/W - allows ≥ 70 W power dissipation with modest heatsinking at T_C = 100 °C
C_{oss eff.}	39 pF - reduces capacitive turn-on loss during zero-voltage transition in resonant designs

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) in standard JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 6.3 nC Q_gs ensures rapid Miller plateau entry
D (Drain)	High-voltage power terminal	Connected to exposed copper pad; carries full 500 V blocking and 5 A switching current
S (Source)	Reference node	Common return for gate drive and load current; ties to PCB ground plane for EMI control

Key Features

Feature	Design Value
Low Q_g (24 nC)	Reduces gate driver power demand and simplifies isolated drive design in offline converters
Enhanced dV/dt ruggedness (5.3 V/ns)	Prevents false turn-on during high-slew-rate commutation in half-bridge leg
Characterized C_{oss eff.} (39 pF)	Enables accurate soft-switching loss modeling in LLC or phase-shifted full-bridge designs
230 mJ E_AS	Eliminates need for external clamping in flyback or forward converter snubber circuits
RoHS-compliant Pb-free variant available	Meets global environmental compliance without derating or performance trade-offs

Applications

Offline SMPS Half-Bridge	UPS Inverter Stage
Use Scenario: Primary-side switching in 300–500 W industrial AC/DC power supplies using two-transistor forward or half-bridge topology. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 400 V DC bus with 50–200 kHz PWM. Use Value: 1.40 Ω R_DS(on) minimizes conduction loss at 5 A RMS; 230 mJ E_AS absorbs leakage inductance spikes without snubber.	Use Scenario: DC-to-AC inversion stage in line-interactive UPS systems delivering clean 230 V/50 Hz sine wave output. IC Role / Device Role / Timing Role: Bridge-leg switch operating in 10–20 kHz square-wave or modified sine-wave mode. Use Value: 500 V V_DS rating safely handles battery overvoltage transients; 5.3 V/ns dV/dt immunity prevents shoot-through during bus transitions.
High-Voltage DC-DC Converter	Industrial Motor Drive Output Stage
Use Scenario: Isolated 48 V to 380 V boost converter in renewable energy battery management systems. IC Role / Device Role / Timing Role: Main power switch in hard-switched boost cell with 100 kHz fixed-frequency control. Use Value: 24 nC Q_g enables efficient gate driving with low-cost 1 A drivers; 21 ns rise time maintains tight duty-cycle control.	Use Scenario: Low-power (< 1 kW) variable-frequency drive output in HVAC blowers or pump controllers. IC Role / Device Role / Timing Role: Inverter leg switch modulating motor phase voltage via 2–16 kHz SPWM. Use Value: Body diode t_rr = 430–650 ns ensures clean commutation without cross-conduction; 1.7 °C/W R_thJC sustains 3.2 A continuous at 100 °C case temperature.

Offline SMPS Half-Bridge

UPS Inverter Stage

Use Scenario: Primary-side switching in 300–500 W industrial AC/DC power supplies using two-transistor forward or half-bridge topology.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 400 V DC bus with 50–200 kHz PWM.

Use Value: 1.40 Ω R_DS(on) minimizes conduction loss at 5 A RMS; 230 mJ E_AS absorbs leakage inductance spikes without snubber.

Use Scenario: DC-to-AC inversion stage in line-interactive UPS systems delivering clean 230 V/50 Hz sine wave output.

IC Role / Device Role / Timing Role: Bridge-leg switch operating in 10–20 kHz square-wave or modified sine-wave mode.

Use Value: 500 V V_DS rating safely handles battery overvoltage transients; 5.3 V/ns dV/dt immunity prevents shoot-through during bus transitions.

High-Voltage DC-DC Converter

Industrial Motor Drive Output Stage

Use Scenario: Isolated 48 V to 380 V boost converter in renewable energy battery management systems.

IC Role / Device Role / Timing Role: Main power switch in hard-switched boost cell with 100 kHz fixed-frequency control.

Use Value: 24 nC Q_g enables efficient gate driving with low-cost 1 A drivers; 21 ns rise time maintains tight duty-cycle control.

Use Scenario: Low-power (< 1 kW) variable-frequency drive output in HVAC blowers or pump controllers.

IC Role / Device Role / Timing Role: Inverter leg switch modulating motor phase voltage via 2–16 kHz SPWM.

Use Value: Body diode t_rr = 430–650 ns ensures clean commutation without cross-conduction; 1.7 °C/W R_thJC sustains 3.2 A continuous at 100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 22 nC, TO-220FP package	Lower I_D rating (4.5 A vs. 5.0 A); no D2PAK thermal advantage	Preferred where through-hole mounting and lower cost outweigh surface-mount thermal benefits
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, TO-220 package - not voltage-compatible	Insufficient V_DS rating for 400 V bus applications; unsuitable as direct replacement	Only viable in low-voltage (< 60 V) DC-DC stages; requires full circuit redesign

Compared with STP5NK50ZFP, IRF830ASPBF offers higher continuous current (5.0 A vs. 4.5 A) and superior thermal resistance (1.7 °C/W vs. ~3.5 °C/W in TO-220FP), making it better suited for compact, high-power-density SMPS. IXTP50N10P is not a functional alternative due to its 100 V rating - it cannot replace IRF830ASPBF in 400 V DC bus applications.

Availability

IRF830ASPBF is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply across industrial production cycles.

Supply support for IRF830ASPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with broad automotive and industrial qualification.

The IRF830A series belongs to Vishay's high-voltage planar MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline AC/DC and DC/DC power conversion systems.

FAQ

What is the maximum continuous drain current for IRF830ASPBF at 100 °C case temperature?

The IRF830ASPBF supports 3.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within its 1.7 °C/W junction-to-case thermal resistance. The IRF830ASPBF must be mounted on a thermally adequate PCB pad per Vishay's recommended footprint to achieve this rating.

Does IRF830ASPBF have a fully characterized body diode?

Yes, the IRF830ASPBF includes full characterization of its intrinsic body diode: t_rr = 430–650 ns, Q_rr = 2.0–3.0 μC, and V_SD = 1.5 V at I_S = 5.0 A and T_J = 25 °C. These parameters are measured under standardized conditions (IF = 5.0 A, dI/dt = 100 A/μs) and enable accurate simulation of freewheeling behavior in bridge configurations - a key feature confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet.

Is IRF830ASPBF RoHS-compliant and halogen-free?

Yes, IRF830ASPBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The "-PbF" suffix denotes compliance, and material categorization is documented in Vishay's specification 99912. No exemptions apply, and the device contains < 900 ppm bromine and < 900 ppm chlorine by weight in homogeneous materials - verified per IEC 62321 testing protocols.

What is the gate threshold voltage range for IRF830ASPBF?

The gate threshold voltage (V_GS(th)) for IRF830ASPBF is specified as 2.0 V minimum to 4.5 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity against spurious gate excursions - a parameter directly extracted from the "Specifications" table on page 2 of Vishay document 91062.

Can IRF830ASPBF be used in avalanche-mode operation?

Yes, IRF830ASPBF is fully rated for repetitive and single-pulse avalanche operation: E_AS = 230 mJ (single-pulse), I_AR = 5.0 A, and E_AR = 7.4 mJ (repetitive). These values are validated per test condition b (L = 18 mH, R_g = 25 Ω, I_AS = 5.0 A) and allow controlled energy absorption during inductive switching faults - a core feature highlighted in both the "Features" and "Absolute Maximum Ratings" sections of the datasheet.

IRF830ASPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF830ASPBF FAQ

1.How can I place an order for IRF830ASPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830ASPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830ASPBF reliable?

The price and inventory of IRF830ASPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830ASPBF is usually 5 days.

3.What payment methods are accepted for IRF830ASPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830ASPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830ASPBF?

IRF830ASPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830ASPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830ASPBF?

For technical support, including IRF830ASPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830ASPBF requirements.

6.How does Aetrix verify that IRF830ASPBF is sourced from the original manufacturer or authorized distributors?

All IRF830ASPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830ASPBF meets industry standards.

7.What is the process for return or replacement of IRF830ASPBF?

All IRF830ASPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF830ASPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830ASPBF part is unused and in its original packaging.

Return procedure for IRF830ASPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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