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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830ASTRLPBF

Name: IRF830ASTRLPBF
Brand: Vishay Siliconix
SKU: IRF830ASTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830ASTRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF830ASTRLPBF.pdf

Description:: MOSFET N-CH 500V 5A D2PAK

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Product details

Overview

IRF830ASTRLPBF from Vishay Siliconix is a 500 V, 5.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.40 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 230 mJ single-pulse avalanche energy-designed for high-voltage switching in offline SMPS half-bridge topologies.

For engineers reviewing the IRF830ASTRLPBF datasheet, IRF830ASTRLPBF pinout, IRF830ASTRLPBF application, or IRF830ASTRLPBF equivalent, this part supports stable high-dV/dt operation (5.3 V/ns), offers fully characterized C_oss and body diode recovery (trr = 430–650 ns), and delivers rugged unclamped inductive switching performance in industrial power converters.

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage blocking and fast switching in hard-switched topologies. Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_g ratio (11/24 nC) support clean turn-on/turn-off with minimal Miller-induced oscillation under 400 V bus conditions.

Thermal design is enabled by a low R_thJC of 1.7 °C/W and validated avalanche capability up to I_AR = 5.0 A. The integrated body diode exhibits V_SD = 1.5 V at 5.0 A and controlled reverse recovery (Q_rr = 2.0–3.0 μC), critical for snubberless flyback and resonant converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports 400 V DC bus with 25 % margin for line surges and ringing in offline AC/DC supplies.
R_DS(on) max	1.40 Ω at V_GS = 10 V - Enables <1.4 W conduction loss at 3.0 A continuous drain current (T_C = 100 °C).
Q_g max	24 nC - Allows direct drive from standard PWM controllers (e.g., UC384x) without gate driver amplification.
E_AS	230 mJ - Withstands unclamped inductive energy during startup/fault in 18 mH chokes without failure (T_J initial = 25 °C).
C_{oss eff.}	39 pF - Fixed capacitance modeling output charge behavior from 0–400 V; enables accurate soft-switching timing prediction.
trr / Q_rr	430–650 ns / 2.0–3.0 μC - Predictable body diode recovery reduces voltage overshoot and EMI in synchronous rectifier or freewheeling roles.
dV/dt rating	5.3 V/ns - Confirmed robustness against parasitic turn-on in high-noise bridge-leg environments.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad; 3-pin configuration (G, D, S) optimized for PCB heat spreading and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 6.3 nC Q_gs ensures rapid Miller plateau exit and low switching loss.
D (Drain)	High-side power terminal	Connected to heatsink via exposed copper pad; rated for 500 V blocking and 20 A pulsed current.
S (Source)	Reference and return path	Common node for gate drive return and current sensing; low-inductance layout critical for dV/dt immunity.

Key Features

Feature	Design Value
Low Q_g (24 nC)	Reduces gate drive power and simplifies controller interface-no external driver needed for ≤200 kHz operation.
Enhanced dV/dt ruggedness (5.3 V/ns)	Prevents false triggering during fast voltage transients in bridge configurations without added gate clamping.
Characterized C_oss and C_{oss eff.}	Enables precise dead-time calculation and ZVS transition design in LLC and phase-shifted full-bridge converters.
Validated avalanche energy (230 mJ)	Eliminates need for external snubbers in flyback and forward converters operating under overload or short-circuit conditions.
Body diode trr & Q_rr data	Supports reliable freewheeling in non-synchronous topologies and aids selection of complementary P-channel devices.

Applications

Offline AC/DC SMPS	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 2-transistor forward converter delivering 150 W at 85–265 VAC input. IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus, switching at 100 kHz with 50 % duty cycle. Use Value: 1.40 Ω R_DS(on) limits conduction loss to <1.1 W; 230 mJ E_AS absorbs leakage inductance spikes during MOSFET turn-off.	Use Scenario: Inverter stage H-bridge in 1 kVA line-interactive UPS with battery backup. IC Role / Device Role / Timing Role: Low-side switch in full-bridge output stage, commutating 230 VAC RMS into load with bidirectional current capability. Use Value: 5.0 A continuous rating and 20 A pulsed current support surge loads; body diode Q_rr = 2.0–3.0 μC minimizes cross-conduction losses during dead-time transitions.
Industrial Motor Drives	High-Voltage DC-DC Converters
Use Scenario: Half-bridge leg in 48 V-to-400 V boost converter for servo drive precharge circuitry. IC Role / Device Role / Timing Role: Upper switch sustaining 400 V while switching 5 A peak inductor current at 50 kHz. Use Value: 500 V V_DS provides 20 % overvoltage margin; dV/dt rating of 5.3 V/ns prevents shoot-through during bus transients.	Use Scenario: Isolated DC-DC module (12 V input to 300 V output) using active clamp forward topology. IC Role / Device Role / Timing Role: Clamp switch managing reset energy from transformer leakage inductance. Use Value: Fully characterized avalanche parameters allow safe energy recycling without external clamp diodes or RC networks.

Offline AC/DC SMPS

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 2-transistor forward converter delivering 150 W at 85–265 VAC input.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus, switching at 100 kHz with 50 % duty cycle.

Use Value: 1.40 Ω R_DS(on) limits conduction loss to <1.1 W; 230 mJ E_AS absorbs leakage inductance spikes during MOSFET turn-off.

Use Scenario: Inverter stage H-bridge in 1 kVA line-interactive UPS with battery backup.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge output stage, commutating 230 VAC RMS into load with bidirectional current capability.

Use Value: 5.0 A continuous rating and 20 A pulsed current support surge loads; body diode Q_rr = 2.0–3.0 μC minimizes cross-conduction losses during dead-time transitions.

Industrial Motor Drives

High-Voltage DC-DC Converters

Use Scenario: Half-bridge leg in 48 V-to-400 V boost converter for servo drive precharge circuitry.

IC Role / Device Role / Timing Role: Upper switch sustaining 400 V while switching 5 A peak inductor current at 50 kHz.

Use Value: 500 V V_DS provides 20 % overvoltage margin; dV/dt rating of 5.3 V/ns prevents shoot-through during bus transients.

Use Scenario: Isolated DC-DC module (12 V input to 300 V output) using active clamp forward topology.

IC Role / Device Role / Timing Role: Clamp switch managing reset energy from transformer leakage inductance.

Use Value: Fully characterized avalanche parameters allow safe energy recycling without external clamp diodes or RC networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 22 nC - similar specs but lower E_AS (120 mJ) and no published C_{oss eff.}.	Limited to lower-energy fault conditions; less suitable for unclamped inductive loads above 10 mH.	Choose when cost sensitivity outweighs avalanche margin requirements and layout space permits TO-220 mounting.
FQP5N50CTU	500 V, 4.5 A, R_DS(on) = 1.5 Ω, Q_g = 25 nC - near-identical electrical envelope but TO-220FP package (higher R_thJA = 62 °C/W).	Requires larger heatsink for same power dissipation; not surface-mount compatible.	Select only for through-hole legacy designs where D2PAK rework is prohibited and thermal budget allows 2× junction rise.

Compared with STP5NK50ZFP and FQP5N50CTU, the IRF830ASTRLPBF offers superior avalanche robustness (230 mJ vs. ≤120 mJ), verified dV/dt immunity (5.3 V/ns), and surface-mount D2PAK packaging-making it preferred for compact, high-reliability industrial SMPS where fault energy absorption and automated assembly are critical.

Availability

IRF830ASTRLPBF is available at Aetrix Electronics and suitable for offline AC/DC power supplies, uninterruptible power systems, and high-speed industrial motor drives requiring stable component supply across extended production lifecycles.

Supply support for IRF830ASTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.

The IRF830ASTRLPBF belongs to Vishay's high-voltage silicon power MOSFET family engineered for ruggedness in hard-switched offline power conversion-emphasizing avalanche energy, dV/dt immunity, and repeatable parametric stability across temperature.

FAQ

What is the maximum continuous drain current for IRF830ASTRLPBF at 100 °C case temperature?

The IRF830ASTRLPBF supports 3.2 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The IRF830ASTRLPBF maintains R_DS(on) stability up to this temperature, enabling predictable conduction loss modeling in thermally constrained layouts.

Does IRF830ASTRLPBF have a fully characterized body diode, and what are its key recovery parameters?

Yes, the IRF830ASTRLPBF includes fully characterized body diode parameters: reverse recovery time (t_rr) of 430–650 ns and reverse recovery charge (Q_rr) of 2.0–3.0 μC at T_J = 25 °C, I_F = 5.0 A, and dI/dt = 100 A/μs. These values are measured and documented in the datasheet, enabling accurate EMI and loss estimation in freewheeling and synchronous rectifier applications. The IRF830ASTRLPBF body diode forward voltage is 1.5 V at 5.0 A.

Can IRF830ASTRLPBF be used in avalanche mode, and what is its single-pulse energy rating?

Yes, the IRF830ASTRLPBF is rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 230 mJ under test conditions of L = 18 mH, R_g = 25 Ω, and I_AS = 5.0 A, starting from T_J = 25 °C. This rating is validated per JEDEC standards and allows the IRF830ASTRLPBF to safely absorb inductive energy in flyback, forward, and active-clamp topologies without external snubbers.

What is the gate threshold voltage range for IRF830ASTRLPBF, and how does it affect drive requirements?

The IRF830ASTRLPBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.5 V at I_D = 250 μA. This wide range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious gate excitation. The IRF830ASTRLPBF achieves full enhancement at V_GS = 10 V, where its R_DS(on) is guaranteed ≤1.40 Ω-making it unsuitable for true logic-level (≤5 V) drive without additional level-shifting circuitry.

Is IRF830ASTRLPBF RoHS-compliant, and what is its lead finish?

Yes, the IRF830ASTRLPBF is RoHS-compliant and halogen-free, with matte tin (Sn) plating on leads. It meets the material categorization requirements defined in Vishay document 99912 and carries the "-GE3" suffix in lead-free ordering codes (e.g., SiHF830ASTRL-GE3). The IRF830ASTRLPBF uses lead (Pb)-free terminations and complies with EU RoHS Directive 2011/65/EU and China RoHS.

IRF830ASTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF830ASTRLPBF FAQ

1.How can I place an order for IRF830ASTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830ASTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830ASTRLPBF reliable?

The price and inventory of IRF830ASTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830ASTRLPBF is usually 5 days.

3.What payment methods are accepted for IRF830ASTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830ASTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830ASTRLPBF?

IRF830ASTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830ASTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830ASTRLPBF?

For technical support, including IRF830ASTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830ASTRLPBF requirements.

6.How does Aetrix verify that IRF830ASTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF830ASTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830ASTRLPBF meets industry standards.

7.What is the process for return or replacement of IRF830ASTRLPBF?

All IRF830ASTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF830ASTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830ASTRLPBF part is unused and in its original packaging.

Return procedure for IRF830ASTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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