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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830L

Name: IRF830L
Brand: Vishay Siliconix
SKU: IRF830L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF830L.pdf

Description:: MOSFET N-CH 500V 4.5A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF830L from Vishay Siliconix is a 500 V, 4.5 A N-channel power MOSFET in D2PAK (TO-263) surface-mount package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC power supplies, and motor control circuits requiring rugged switching under inductive loads.

For engineers reviewing the IRF830L datasheet, IRF830L pinout, IRF830L application, or IRF830L equivalent, this page delivers verified electrical specs, thermal derating behavior, diode recovery characteristics, and real-world substitution guidance-enabling accurate selection for high-reliability industrial power stages where voltage blocking, avalanche energy handling (280 mJ), and PCB-mount thermal performance (3.1 W) are critical.

Technical Context

This third-generation power MOSFET uses planar vertical DMOS technology optimized for fast switching and low conduction loss. Its 500 V V_DS rating supports off-line applications up to 400 V DC bus, while the 1.5 Ω R_DS(on) balances efficiency and die size in the D2PAK package.

The device integrates a robust body diode with 320–640 ns reverse recovery time and 1.0–2.0 μC Q_rr, enabling reliable operation in hard-switched topologies. Avalanche capability is validated per JEDEC JESD24-1, with E_AS = 280 mJ (single-pulse) and I_AR = 4.5 A at T_J = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports 400 V DC-link designs with 25 % voltage margin for surge and ringing.
R_DS(on) @ V_GS = 10 V	1.5 Ω - Enables ≤ 30.4 W conduction loss at 4.5 A continuous drain current (T_C = 25 °C).
Q_g	38 nC - Determines gate drive power requirement; compatible with standard 12 V logic-level drivers.
E_AS	280 mJ - Allows safe unclamped inductive switching without external snubbers in flyback or relay drivers.
T_J Range	−55 to +150 °C - Qualified for industrial ambient environments and thermally constrained PCB layouts.
R_thJC	1.7 °C/W - Enables direct heatsinking via exposed drain pad; critical for thermal management in compact power modules.
I_D @ T_C = 100 °C	2.9 A - Defines usable current limit in sustained high-temperature operation (e.g., enclosed enclosures).

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Dimensions: 10.67 mm × 9.65 mm × 4.83 mm (max height), 3-pin configuration (G-D-S), lead (Pb)-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V threshold signal; requires ≤ 2.7 Ω gate resistance to avoid oscillation during fast switching.
Drain (D)	High-side power output	Exposed metal tab-must be soldered to large copper pour for thermal dissipation and low-inductance return path.
Source (S)	Reference node / return path	Connects to power ground; internal source inductance (7.5 nH) affects diode recovery and dI/dt sensitivity.

Key Features

Feature	Design Value
Repetitive avalanche rated	Validated for ≥ 7.4 mJ per pulse at 4.5 A, enabling robustness in inductive load switching without external protection.
Dynamic dV/dt rating	3.5 V/ns - Resists false turn-on from high dv/dt transients in bridge configurations and motor drives.
Fast switching	Turn-off delay < 42 ns and fall time < 16 ns at V_DD = 250 V, supporting >100 kHz SMPS operation.
Low gate charge	Q_gs = 5.0 nC and Q_gd = 22 nC - Reduces driver losses and improves Miller immunity in high-frequency designs.
PCB-mount power capability	3.1 W at T_A = 25 °C on 1" FR-4 - Enables cost-effective thermal design without discrete heatsinks in space-constrained applications.

Applications

AC-DC Power Supply	DC-DC Converter
Use Scenario: Primary-side switch in 50–100 W offline flyback converter operating at 65 kHz. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer through transformer; handles 400 V DC bus and absorbs leakage inductance spikes. Use Value: 280 mJ single-pulse avalanche energy eliminates need for clamp circuitry, reducing BOM count and layout area.	Use Scenario: Synchronous rectifier or high-side switch in isolated forward converter for telecom power systems. IC Role / Device Role / Timing Role: Main power switch managing 300–400 V input; operates with tight duty cycle control and fast turn-off to minimize cross-conduction loss. Use Value: 1.5 Ω R_DS(on) and 38 nC Q_g enable >92 % efficiency at full load while maintaining gate drive simplicity.
Motor Control	Industrial Lighting
Use Scenario: Half-bridge leg in 24–48 V brushed DC motor driver for HVAC actuators and valve control. IC Role / Device Role / Timing Role: Low-side or high-side switching element handling inductive kickback and PWM commutation at 20 kHz. Use Value: Body diode t_rr = 320–640 ns and Q_rr = 1.0–2.0 μC ensure clean freewheeling with minimal voltage overshoot and EMI.	Use Scenario: Dimmable LED driver primary switch in constant-voltage LED string supplies for street lighting. IC Role / Device Role / Timing Role: High-voltage switch regulating bulk capacitance charging and sustaining 350–700 V LED string voltages. Use Value: −55 to +150 °C operating range and 500 V V_DS support outdoor deployment with wide ambient temperature swings and lightning surge resilience.

AC-DC Power Supply

DC-DC Converter

Use Scenario: Primary-side switch in 50–100 W offline flyback converter operating at 65 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer through transformer; handles 400 V DC bus and absorbs leakage inductance spikes.

Use Value: 280 mJ single-pulse avalanche energy eliminates need for clamp circuitry, reducing BOM count and layout area.

Use Scenario: Synchronous rectifier or high-side switch in isolated forward converter for telecom power systems.

IC Role / Device Role / Timing Role: Main power switch managing 300–400 V input; operates with tight duty cycle control and fast turn-off to minimize cross-conduction loss.

Use Value: 1.5 Ω R_DS(on) and 38 nC Q_g enable >92 % efficiency at full load while maintaining gate drive simplicity.

Motor Control

Industrial Lighting

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor driver for HVAC actuators and valve control.

IC Role / Device Role / Timing Role: Low-side or high-side switching element handling inductive kickback and PWM commutation at 20 kHz.

Use Value: Body diode t_rr = 320–640 ns and Q_rr = 1.0–2.0 μC ensure clean freewheeling with minimal voltage overshoot and EMI.

Use Scenario: Dimmable LED driver primary switch in constant-voltage LED string supplies for street lighting.

IC Role / Device Role / Timing Role: High-voltage switch regulating bulk capacitance charging and sustaining 350–700 V LED string voltages.

Use Value: −55 to +150 °C operating range and 500 V V_DS support outdoor deployment with wide ambient temperature swings and lightning surge resilience.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF830SPbF	D2PAK package, identical V_DS, R_DS(on), and Q_g; Pb-containing terminations vs. IRF830L's Pb-free construction.	Not suitable for RoHS-compliant production; otherwise functionally interchangeable in legacy designs.	Select IRF830SPbF only if Pb-based assembly is permitted and supply chain mandates legacy termination.
SiHF830L-GE3	Same D2PAK footprint and electrical specs; Vishay's fully RoHS-compliant, halogen-free variant with enhanced moisture sensitivity level (MSL 1).	Better suited for automated SMT lines with strict environmental compliance and reflow profile requirements.	Prefer SiHF830L-GE3 for new designs targeting IPC/JEDEC MSL-1 reliability and global regulatory acceptance.

Compared with IRF830L, IRF830SPbF offers identical performance but lacks RoHS compliance, while SiHF830L-GE3 provides identical functionality with tighter process controls and broader environmental certification-making it the preferred upgrade path for production scalability and long-term component availability.

Availability

IRF830L is available at Aetrix Electronics and suitable for AC-DC power supplies, DC-DC converters, and industrial motor control systems requiring stable component supply across extended production lifecycles.

Supply support for IRF830L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF830L belongs to Vishay's third-generation power MOSFET family engineered for high-voltage switching efficiency, rugged avalanche performance, and surface-mount manufacturability in demanding power conversion applications.

FAQ

What is the maximum continuous drain current for IRF830L at 100 °C case temperature?

The IRF830L supports 2.9 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the D2PAK package under sustained high-temperature conditions and must be used when designing for enclosure ambient temperatures exceeding 70 °C or limited airflow. The IRF830L's linear derating factor of 0.59 W/°C further defines safe power limits above 25 °C case temperature.

Does IRF830L have a built-in body diode, and what are its key recovery parameters?

Yes, the IRF830L integrates a monolithic body diode with typical reverse recovery time (t_rr) of 320–640 ns and reverse recovery charge (Q_rr) of 1.0–2.0 μC at T_J = 25 °C, I_F = 3.1 A, and dI/dt = 100 A/μs. These values directly impact switching loss and voltage overshoot in hard-commutated circuits. The IRF830L's body diode is rated for 4.5 A continuous and 18 A pulsed forward current, making it suitable for freewheeling in flyback and forward converters without external diodes.

Is IRF830L pin-compatible with IRF830SPbF and SiHF830L-GE3?

Yes, the IRF830L shares identical D2PAK (TO-263) mechanical footprint, pinout (G-D-S), and terminal assignments with both IRF830SPbF and SiHF830L-GE3. All three parts use the same land pattern, thermal pad layout, and solder mask definition per Vishay's AN826 recommended pads. No PCB redesign is required when substituting among these variants-only assembly process adjustments (e.g., reflow profile for Pb-free) may apply.

What is the gate threshold voltage range for IRF830L, and how does it affect drive requirements?

The IRF830L has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers, while maintaining noise immunity against spurious gate excitation. The IRF830L's gate leakage (±100 nA max at ±20 V) and input resistance (0.5–2.7 Ω) further simplify drive circuit design-no active pull-down is needed, and gate resistors ≤ 12 Ω suffice for controlled switching transitions.

How does the avalanche rating of IRF830L improve system reliability in inductive switching applications?

The IRF830L is rated for 280 mJ single-pulse avalanche energy (E_AS) and 7.4 mJ repetitive avalanche energy (E_AR), validated per JEDEC JESD24-1. This allows the IRF830L to safely absorb inductive energy during overvoltage events-such as transformer leakage spikes or motor back-EMF-without catastrophic failure. In practice, this eliminates reliance on external RCD clamps in flyback converters and reduces failure risk in relay drivers or solenoid controls where load disconnection causes high dI/dt transients.

IRF830L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 610 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRF830L FAQ

1.How can I place an order for IRF830L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830L reliable?

The price and inventory of IRF830L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830L is usually 5 days.

3.What payment methods are accepted for IRF830L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830L?

IRF830L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830L?

For technical support, including IRF830L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830L requirements.

6.How does Aetrix verify that IRF830L is sourced from the original manufacturer or authorized distributors?

All IRF830L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830L meets industry standards.

7.What is the process for return or replacement of IRF830L?

All IRF830L units undergo pre-shipment inspection (PSI). If there is an issue with IRF830L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830L part is unused and in its original packaging.

Return procedure for IRF830L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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