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Vishay Siliconix IRF830LPBF
- Part No.:
- IRF830LPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF830LPBF.pdf
- Description:
- MOSFET N-CH 500V 4.5A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,937
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Product details
Overview
IRF830LPBF from Vishay Siliconix is a 500 V, 4.5 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switching in offline AC-DC power supplies and motor control circuits.
For engineers reviewing the IRF830LPBF datasheet, IRF830LPBF pinout, IRF830LPBF application, or IRF830LPBF equivalent, this page delivers verified electrical specs, thermal derating data, body diode recovery characteristics, and validated alternatives for high-reliability industrial power design.
Technical Context
This third-generation planar vertical MOSFET uses ruggedized die construction with optimized channel geometry to achieve low on-resistance while maintaining high dV/dt immunity (3.5 V/ns) and fast switching (8.2 ns turn-on delay, 16 ns rise time). Its 2.0 W PCB-mount power dissipation supports compact surface-mount designs without heatsinks in low-duty-cycle applications.
The device integrates a monolithic body diode with 320–640 ns reverse recovery time and 1.0–2.0 μC Qrr, enabling reliable operation in hard-switched flyback and snubberless inductive load circuits. Avalanche energy rating (EAS = 280 mJ, EAR = 7.4 mJ) confirms robust unclamped inductive switching capability under defined test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports mains-referenced topologies up to 400 V DC bus with margin. |
| RDS(on) | 1.5 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 3.1 A continuous drain current. |
| Qg | 38 nC - Determines gate drive power requirement; compatible with standard 12 V logic-level drivers. |
| ID (TC = 25 °C) | 4.5 A - Maximum continuous current with case temperature maintained at 25 °C. |
| EAS | 280 mJ - Single-pulse avalanche energy rating validates safe operation during transient overloads. |
| TJ Range | −55 to +150 °C - Enables deployment in extended-temperature industrial environments. |
| RthJC | 1.7 °C/W - Low junction-to-case thermal resistance supports efficient heat transfer to PCB copper pour or heatsink. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB routing and thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control input | Receives 10 V gate drive to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with standard PWM controllers. |
| Drain (D) | High-side switch node | Connected to exposed metal tab; carries full load current and must be routed to large copper area for thermal dissipation. |
| Source (S) | Reference return path | Serves as common reference for gate drive and current sensing; internal source inductance (LS = 7.5 nH) impacts diode recovery behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching up to IAR = 4.5 A and EAR = 7.4 mJ - eliminates need for external clamping in many relay/motor driver designs. |
| Dynamic dV/dt rating | 3.5 V/ns - prevents false turn-on during high-slew-rate voltage transients in noisy power systems. |
| Fast switching | 8.2 ns td(on), 16 ns tr, 42 ns td(off), 16 ns tf - reduces switching losses in 50–100 kHz SMPS applications. |
| Low RDS(on) / Qg ratio | 1.5 Ω / 38 nC = 39.5 Ω·nC - balances conduction and switching loss trade-off for medium-frequency power conversion. |
| Surface mount (D2PAK) | Enables automated assembly and high-power density layout; thermal pad allows direct PCB copper attachment for ≤1.7 °C/W RthJC. |
Applications
| AC-DC Adapter Power Supply | Industrial Motor Starter |
|---|---|
Use Scenario: 36 W offline flyback converter operating from 85–265 V AC input. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer. Use Value: 500 V VDS rating provides safety margin above 375 V peak rectified voltage; 1.5 Ω RDS(on) limits conduction loss to <1.2 W at full load. |
Use Scenario: 1/4 HP brushed DC motor controlled via half-bridge H-bridge with freewheeling paths. IC Role / Device Role / Timing Role: High-side switching element handling bidirectional inductive current and body-diode commutation. Use Value: Repetitive avalanche rating (7.4 mJ) and 320 ns trr support reliable turn-off during rapid direction reversal without external snubbers. |
| LED Driver for Street Lighting | Capacitor Discharge Ignition (CDI) |
Use Scenario: Constant-current buck-boost LED driver powering 40 V string from 12–48 V DC battery input. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in high-efficiency topology. Use Value: Low Qgd/Qg ratio (22/38 = 58%) minimizes Miller-induced switching delay, improving duty cycle control accuracy at 200 kHz. |
Use Scenario: Triggered spark generation in small-engine ignition systems using capacitor discharge through primary coil. IC Role / Device Role / Timing Role: Fast-turning main switch discharging high-voltage capacitor into ignition coil primary winding. Use Value: 280 mJ single-pulse avalanche energy enables safe operation during coil saturation failure events without device rupture. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.4 Ω, Qg = 27 nC, TO-220FP package | Lower gate charge improves switching efficiency but requires through-hole mounting and heatsink. | Preferred where board space permits through-hole assembly and lower drive loss is critical. |
| FQP5N50CTU | 500 V, 4.5 A, RDS(on) = 1.6 Ω, Qg = 42 nC, TO-220 package | Higher Qg increases gate drive demand; no avalanche rating specified in datasheet. | Acceptable for non-avalanche-critical linear or low-frequency switching where cost is prioritized. |
Compared with STP5NK50ZFP and FQP5N50CTU, the IRF830LPBF offers surface-mount D2PAK packaging with validated repetitive avalanche capability and moderate gate charge-making it optimal for compact, high-reliability industrial power modules where PCB thermal management is feasible.
Availability
IRF830LPBF is available at Aetrix Electronics and suitable for offline AC-DC power supplies, industrial motor starters, and LED street lighting drivers requiring stable component supply across multi-year production cycles.
Supply support for IRF830LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.
The IRF830LPBF belongs to Vishay's third-generation power MOSFET family engineered for high-voltage switching in industrial, appliance, and lighting power systems where avalanche robustness and surface-mount scalability are essential.
FAQ
What is the maximum continuous drain current for IRF830LPBF at 100 °C case temperature?
The IRF830LPBF supports 2.9 A continuous drain current when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual PCB layout and ambient conditions in the final design. The IRF830LPBF datasheet provides linear derating factors (0.59 W/°C) to calculate allowable power dissipation across temperature ranges.
Does IRF830LPBF have a specified avalanche energy rating?
Yes, the IRF830LPBF is explicitly rated for repetitive avalanche energy (EAR = 7.4 mJ) and single-pulse avalanche energy (EAS = 280 mJ), both tested under defined conditions (VDD = 50 V, IAS = 4.5 A, TJ ≤ 150 °C). These values are documented in the Absolute Maximum Ratings section of the Vishay datasheet S16-0754-Rev. E and confirm its suitability for inductive load switching without external protection.
What is the gate threshold voltage range for IRF830LPBF?
The gate-source threshold voltage (VGS(th)) for IRF830LPBF is specified as 2.0 V minimum to 4.0 V maximum at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage. The IRF830LPBF does not qualify as a logic-level MOSFET, requiring ≥5 V drive for partial enhancement and ≥10 V for full RDS(on) performance.
Can IRF830LPBF be used in parallel configurations?
Yes, the IRF830LPBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. The datasheet highlights "Ease of paralleling" as a key feature, and typical output characteristics (Fig. 1–2) show consistent transconductance behavior across temperature. For stable parallel operation, matched gate resistors and symmetrical PCB layout are required-details confirmed in the IRF830LPBF application guidance within Vishay document 91064.
What is the body diode reverse recovery time for IRF830LPBF?
The body diode reverse recovery time (trr) for IRF830LPBF is specified as 320 ns typical and 640 ns maximum at TJ = 25 °C, IF = 3.1 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in hard-commutated topologies. The IRF830LPBF's trr and associated Qrr (1.0–2.0 μC) are measured per JEDEC standards and published in the "Drain-Source Body Diode Characteristics" section of the official datasheet.
IRF830LPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 610 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262-3
IRF830LPBF FAQ
1.How can I place an order for IRF830LPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF830LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF830LPBF reliable?
The price and inventory of IRF830LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830LPBF is usually 5 days.
3.What payment methods are accepted for IRF830LPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830LPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF830LPBF?
IRF830LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF830LPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF830LPBF?
For technical support, including IRF830LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830LPBF requirements.
6.How does Aetrix verify that IRF830LPBF is sourced from the original manufacturer or authorized distributors?
All IRF830LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830LPBF meets industry standards.
7.What is the process for return or replacement of IRF830LPBF?
All IRF830LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF830LPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF830LPBF part is unused and in its original packaging.
Return procedure for IRF830LPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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