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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830S

Name: IRF830S
Brand: Vishay Siliconix
SKU: IRF830S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF830S.pdf

Description:: MOSFET N-CH 500V 4.5A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF830S from Vishay Siliconix is a 500 V, 4.5 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC SMPS primary switches, and offline power supplies.

For engineers reviewing the IRF830S datasheet, IRF830S pinout, IRF830S application, or IRF830S equivalent, key selection criteria include its 500 V V_DS, 74 W T_C power dissipation, dV/dt ruggedness (3.5 V/ns), body diode recovery time (320–640 ns), and PCB-mount thermal resistance (40 °C/W).

Technical Context

The IRF830S is a third-generation planar vertical power MOSFET optimized for high-voltage switching with low conduction loss and robust unclamped inductive switching capability. Its design includes integrated body diode with 1.6 V forward voltage at 4.5 A and 320–640 ns reverse recovery time under specified test conditions.

It operates with ±20 V gate drive, exhibits 2.0–4.0 V gate threshold voltage, and supports fast switching via 8.2 ns turn-on delay and 16 ns rise time at V_DD = 250 V, R_g = 12 Ω-enabling efficient operation in hard-switched topologies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands full mains-referenced DC bus voltages in 230 VAC offline applications
R_DS(on)	1.5 Ω @ V_GS = 10 V - Enables <4.5 W conduction loss at 3 A continuous drain current
I_D (continuous)	4.5 A @ T_C = 25 °C - Supports medium-power primary-side switching in ≤75 W SMPS designs
Q_g	38 nC - Requires ~0.38 mJ gate drive energy per switch cycle at 10 V, influencing driver sizing
E_AS	280 mJ - Sustains single-pulse inductive energy without failure during startup or fault events
dV/dt rating	3.5 V/ns - Resists false turn-on in high-dV/dt environments like flyback snubbers or phase-cut dimmers
T_J range	−55 to +150 °C - Qualified for industrial ambient and thermally demanding enclosed power supplies

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain thermal pad on underside; 3-pin configuration optimized for high-current PCB mounting and thermal transfer to copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 5.0 nC gate-source charge enables simple CMOS/TTL-compatible driving
D (Drain)	High-voltage power output	Connected to internal die backside and thermal pad; must be routed to large copper pour for heat dissipation
S (Source)	Power return / reference node	Common source node for gate drive return and current sensing; internal source inductance is 7.5 nH

Key Features

Feature	Design Value
Repetitive avalanche rated	7.4 mJ per pulse - Enables reliable operation under transient overloads without derating
Dynamic dV/dt rating	3.5 V/ns - Prevents spurious turn-on during high-slew-rate switching transitions
Fast switching	8.2 ns t_d(on), 16 ns t_r, 42 ns t_d(off) - Reduces switching losses in high-frequency SMPS
Low R_DS(on) × Q_g figure-of-merit	57 Ω·nC - Balances conduction and switching loss trade-offs for 100–300 kHz operation
Surface mount (D2PAK)	Thermal resistance R_thJC = 1.7 °C/W - Allows >70 W power handling with minimal heatsink when mounted on 1"² FR-4

Applications

Switch-Mode Power Supply Primary Switch	DC-DC Converter High-Side Switch
Use Scenario: 50–75 W offline flyback or forward converter operating from universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; driven by UC3842/UC3845 or similar PWM controller. Use Value: 500 V rating accommodates reflected output voltage plus leakage spike; 1.5 Ω R_DS(on) limits conduction loss to <2.5 W at 3 A RMS.	Use Scenario: Isolated 12 V to 48 V boost converter in telecom power shelf or PoE midspan. IC Role / Device Role / Timing Role: High-side synchronous rectifier or main switching FET in non-isolated boost stage. Use Value: Repetitive avalanche rating absorbs inductive kickback during current interruption; 38 nC Q_g ensures compatibility with standard gate drivers at 200 kHz.
Motor Drive Half-Bridge Leg	Lighting Ballast Control Switch
Use Scenario: Low-cost 100–200 W BLDC motor inverter for fans or pumps using 6-step commutation. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; driven by bootstrap gate driver (e.g., IR2104). Use Value: 4.5 A continuous current supports peak motor currents up to 18 A pulsed; 74 W T_C rating allows direct PCB heatsinking without discrete heatsink.	Use Scenario: Electronic ballast for 36–40 W fluorescent lamps with active PFC front-end. IC Role / Device Role / Timing Role: Main switching device in resonant half-bridge inverter driving lamp filaments. Use Value: 320–640 ns body diode t_rr enables zero-voltage switching (ZVS) transition; 1.6 V V_SD minimizes conduction loss during freewheeling.

Switch-Mode Power Supply Primary Switch

DC-DC Converter High-Side Switch

Use Scenario: 50–75 W offline flyback or forward converter operating from universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; driven by UC3842/UC3845 or similar PWM controller.

Use Value: 500 V rating accommodates reflected output voltage plus leakage spike; 1.5 Ω R_DS(on) limits conduction loss to <2.5 W at 3 A RMS.

Use Scenario: Isolated 12 V to 48 V boost converter in telecom power shelf or PoE midspan.

IC Role / Device Role / Timing Role: High-side synchronous rectifier or main switching FET in non-isolated boost stage.

Use Value: Repetitive avalanche rating absorbs inductive kickback during current interruption; 38 nC Q_g ensures compatibility with standard gate drivers at 200 kHz.

Motor Drive Half-Bridge Leg

Lighting Ballast Control Switch

Use Scenario: Low-cost 100–200 W BLDC motor inverter for fans or pumps using 6-step commutation.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; driven by bootstrap gate driver (e.g., IR2104).

Use Value: 4.5 A continuous current supports peak motor currents up to 18 A pulsed; 74 W T_C rating allows direct PCB heatsinking without discrete heatsink.

Use Scenario: Electronic ballast for 36–40 W fluorescent lamps with active PFC front-end.

IC Role / Device Role / Timing Role: Main switching device in resonant half-bridge inverter driving lamp filaments.

Use Value: 320–640 ns body diode t_rr enables zero-voltage switching (ZVS) transition; 1.6 V V_SD minimizes conduction loss during freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, 1.4 Ω R_DS(on), 35 nC Q_g, TO-220FP package	Through-hole mounting; higher R_thJA (62 °C/W) limits PCB-only thermal performance	Preferred where through-hole assembly or legacy footprint compatibility is required
IXTP50N10P	100 V, 50 A, 0.022 Ω R_DS(on), 95 nC Q_g, TO-220 package	Lower voltage rating; unsuitable for 400 V DC bus; optimized for high-current, low-V_DS applications	Only viable in low-input-voltage DC-DC stages-not a drop-in replacement for IRF830S

Compared with STP5NK50ZFP, the IRF830S offers superior thermal performance in surface-mount layouts due to D2PAK's lower R_thJC (1.7 vs. 2.5 °C/W), while IXTP50N10P serves fundamentally different voltage-class applications and cannot replace IRF830S in 500 V systems.

Availability

IRF830S is available at Aetrix Electronics and suitable for offline power supplies, DC-DC converters, and motor control circuits requiring stable component supply, RoHS-compliant sourcing, and long-term industrial lifecycle support.

Supply support for IRF830S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRF830S belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered specifically for cost-sensitive, high-efficiency offline power conversion and industrial switching applications.

FAQ

What is the maximum continuous drain current rating for IRF830S at 100 °C case temperature?

The IRF830S has a continuous drain current rating of 2.9 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be applied when designing for ambient temperatures above 50 °C or limited airflow. The IRF830S datasheet confirms this value with linear derating factor of 0.59 W/°C beyond 25 °C.

Does IRF830S support logic-level gate drive?

No, IRF830S is not a logic-level MOSFET. Its gate threshold voltage is specified from 2.0 V to 4.0 V, but it requires V_GS = 10 V to achieve the rated R_DS(on) of 1.5 Ω. Driving IRF830S with 3.3 V or 5 V logic will result in significantly higher on-resistance and excessive conduction loss. The IRF830S datasheet explicitly defines test conditions for R_DS(on) at V_GS = 10 V, confirming standard gate drive requirement.

What is the avalanche energy rating of IRF830S, and how is it tested?

The IRF830S is rated for 280 mJ single-pulse avalanche energy (E_AS) and 7.4 mJ repetitive avalanche energy (E_AR). E_AS is measured under conditions of V_DD = 50 V, starting T_J = 25 °C, L = 24 mH, R_g = 25 Ω, and I_AS = 4.5 A per Figure 12 in the IRF830S datasheet. This rating validates ruggedness during unclamped inductive switching events such as transformer saturation or short-circuit faults.

Can IRF830S be paralleled with identical units for higher current handling?

Yes, the IRF830S is designed for ease of paralleling, as stated in its official features list. Its positive temperature coefficient of R_DS(on) (confirmed in Figure 4 of the IRF830S datasheet) ensures current sharing stability across multiple devices. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and shared thermal path-practices validated in Vishay's application guidance for multi-FET configurations.

What is the thermal resistance from junction to case (R_thJC) for IRF830S, and why does it matter?

The IRF830S has a maximum junction-to-case thermal resistance (R_thJC) of 1.7 °C/W, measured from die to the D2PAK drain tab. This low value enables efficient heat transfer to an external heatsink or large PCB copper area, supporting up to 74 W power dissipation at T_C = 25 °C. It directly determines achievable output power in thermally constrained designs and is critical for calculating safe operating area (SOA) compliance in the IRF830S datasheet.

IRF830S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 610 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF830S FAQ

1.How can I place an order for IRF830S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830S reliable?

The price and inventory of IRF830S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830S is usually 5 days.

3.What payment methods are accepted for IRF830S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830S?

IRF830S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830S?

For technical support, including IRF830S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830S requirements.

6.How does Aetrix verify that IRF830S is sourced from the original manufacturer or authorized distributors?

All IRF830S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830S meets industry standards.

7.What is the process for return or replacement of IRF830S?

All IRF830S units undergo pre-shipment inspection (PSI). If there is an issue with IRF830S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830S part is unused and in its original packaging.

Return procedure for IRF830S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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