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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF830STRLPBF

Name: IRF830STRLPBF
Brand: Vishay Siliconix
SKU: IRF830STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF830STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF830STRLPBF.pdf

Description:: MOSFET N-CH 500V 4.5A D2PAK

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Product details

Overview

IRF830STRLPBF from Vishay Siliconix is a 500 V, 4.5 A N-channel power MOSFET in D2PAK (TO-263) surface-mount package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switch-mode power supplies, AC-DC adapters, and offline SMPS primary-side switching.

For engineers reviewing the IRF830STRLPBF datasheet, IRF830STRLPBF pinout, IRF830STRLPBF application, or IRF830STRLPBF equivalent, key selection criteria include its 500 V V_DS, 74 W T_C power dissipation, dV/dt ruggedness (3.5 V/ns), body diode recovery time (320–640 ns), and D2PAK thermal performance on PCB mount (R_thJA = 40 °C/W).

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for fast switching and ruggedness in hard-switched topologies. Its design integrates low gate charge (Q_g = 38 nC) with high dV/dt immunity (3.5 V/ns) and full repetitive avalanche capability (E_AR = 7.4 mJ), enabling reliable operation under transient overvoltage and inductive load conditions.

The IRF830STRLPBF uses planar silicon technology with a HEX-4 die in D2PAK, delivering 1.5 Ω R_DS(on) at 10 V drive while maintaining tight V_GS(th) range (2.0–4.0 V) and low gate leakage (< ±100 nA). Its internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) are specified for accurate switching waveform modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in universal-input offline converters up to 380 V DC bus.
R_DS(on)	1.5 Ω @ V_GS = 10 V - enables low conduction loss at 4.5 A continuous drain current (T_C = 25 °C).
Q_g	38 nC - determines gate drive power requirement and influences turn-on/turn-off timing in PWM controllers.
E_AS	280 mJ - specifies single-pulse unclamped inductive energy handling without failure, critical for flyback snubberless designs.
dV/dt Rating	3.5 V/ns - ensures immunity to false triggering during high-slew-rate voltage transients in bridge configurations.
T_J Range	−55 to +150 °C - supports industrial and extended-temperature power supply operation with derated current above 100 °C.
R_thJC	1.7 °C/W - defines thermal path efficiency from junction to case, essential for heatsink sizing in high-power density layouts.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold 2.0–4.0 V; requires <2.7 Ω series resistance to damp ringing per layout guidelines.
D (Drain)	High-voltage output node	Connected to 500 V DC bus; ties directly to large copper pour for thermal dissipation and EMI reduction.
S (Source)	Power return reference	Common node for current sensing and gate driver return; internal 7.5 nH inductance affects high-speed switching fidelity.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables robust operation under short-circuit or overload without external clamping in SMPS primary switches.
Dynamic dV/dt rating	3.5 V/ns immunity prevents spurious turn-on during high-frequency voltage transitions in half-bridge circuits.
Fast switching	Turn-off delay 42 ns + fall time 16 ns at V_DD = 250 V, allowing >100 kHz operation with low switching loss.
Low Q_gd/Q_gs ratio	22 nC / 5.0 nC = 4.4 - improves Miller immunity and reduces risk of shoot-through in synchronous rectification.
PCB-mount power capability	3.1 W dissipation on 1" FR-4 board - supports compact, heatsink-free designs in low-to-mid power adapters.

Applications

AC-DC Power Adapters	Offline LED Drivers
Use Scenario: Universal-input (90–264 V_AC) flyback converter powering consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer coupling. Use Value: 500 V V_DS and 280 mJ E_AS ensure safe operation during line surges and output short-circuit events.	Use Scenario: Constant-current isolated LED driver for commercial lighting with dimming interface. IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback topology operating at variable frequency. Use Value: Low Q_g (38 nC) and fast switching reduce losses at high frequency, improving efficiency and thermal margin.
Industrial SMPS	UPS Input Stage
Use Scenario: 24 V/48 V output industrial power supply with wide ambient temperature range. IC Role / Device Role / Timing Role: Primary-side switch in forward or half-bridge topology with active clamp or synchronous rectification. Use Value: −55 to +150 °C T_J range and 74 W T_C rating support reliable operation in enclosed, fanless enclosures.	Use Scenario: Line-interactive UPS with boost/buck converter for voltage regulation. IC Role / Device Role / Timing Role: High-side switch in bidirectional DC-DC stage managing battery charging and grid feed-in. Use Value: Repetitive avalanche rating (7.4 mJ EAR) and 3.5 V/ns dV/dt immunity prevent failure during grid transients and battery reversal events.

AC-DC Power Adapters

Offline LED Drivers

Use Scenario: Universal-input (90–264 V_AC) flyback converter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer coupling.

Use Value: 500 V V_DS and 280 mJ E_AS ensure safe operation during line surges and output short-circuit events.

Use Scenario: Constant-current isolated LED driver for commercial lighting with dimming interface.

IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback topology operating at variable frequency.

Use Value: Low Q_g (38 nC) and fast switching reduce losses at high frequency, improving efficiency and thermal margin.

Industrial SMPS

UPS Input Stage

Use Scenario: 24 V/48 V output industrial power supply with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary-side switch in forward or half-bridge topology with active clamp or synchronous rectification.

Use Value: −55 to +150 °C T_J range and 74 W T_C rating support reliable operation in enclosed, fanless enclosures.

Use Scenario: Line-interactive UPS with boost/buck converter for voltage regulation.

IC Role / Device Role / Timing Role: High-side switch in bidirectional DC-DC stage managing battery charging and grid feed-in.

Use Value: Repetitive avalanche rating (7.4 mJ EAR) and 3.5 V/ns dV/dt immunity prevent failure during grid transients and battery reversal events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 23 nC, TO-220FP package	Lower gate charge but through-hole mounting; lacks D2PAK thermal performance on PCB	Prefer when lower drive loss is critical and board space allows through-hole assembly.
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, TO-220 package - not voltage-compatible	Not a direct voltage replacement; only suitable for low-voltage DC-DC stages	Exclude for primary-side 500 V applications; consider only for secondary-side synchronous rectification where voltage rating permits.

Compared with STP5NK50ZFP, the IRF830STRLPBF offers superior PCB thermal management (R_thJA = 40 °C/W vs. ~65 °C/W) but higher gate drive demand; IXTP50N10P is unsuitable for 500 V use due to 100 V rating, making it non-interchangeable without circuit redesign.

Availability

IRF830STRLPBF is available at Aetrix Electronics and suitable for AC-DC power adapters, offline LED drivers, and industrial SMPS requiring stable component supply across production lifecycles.

Supply support for IRF830STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF830STRLPBF belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for ruggedness, fast switching, and cost-effective performance in offline switch-mode power conversion.

FAQ

What is the maximum continuous drain current for IRF830STRLPBF at 100 °C case temperature?

The IRF830STRLPBF supports 2.9 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the D2PAK package and must be validated against actual board layout and ambient conditions. The IRF830STRLPBF's linear derating factor is 0.59 W/°C above 25 °C case temperature, ensuring predictable power handling in thermally constrained designs.

Does IRF830STRLPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF830STRLPBF integrates a body diode with 4.5 A continuous forward current (I_S), 18 A pulsed rating (I_SM), and 1.6 V forward voltage (V_SD) at 4.5 A and 25 °C. Its reverse recovery time is 320–640 ns, and Q_rr is 1.0–2.0 μC-critical for evaluating commutation losses in quasi-resonant and LLC topologies. These values are measured with V_GS = 0 V and defined in the IRF830STRLPBF datasheet Section "Drain-Source Body Diode Characteristics".

Is IRF830STRLPBF RoHS-compliant and halogen-free?

Yes, IRF830STRLPBF is lead (Pb)-free and halogen-free, conforming to RoHS Directive 2011/65/EU and Vishay's material categorization standard (document 99912). The "PbF" suffix denotes Pb-free termination, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. Full compliance documentation is available in Vishay's official product specification for IRF830STRLPBF.

What is the gate threshold voltage range for IRF830STRLPBF, and how does it affect drive design?

The IRF830STRLPBF has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, per its specifications table. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement and consistent R_DS(on) across production lots. Drive circuits must supply ≥12 V peak to accommodate tolerance and ensure reliable turn-on under worst-case V_GS(th) and temperature drift-verified in the IRF830STRLPBF's transfer characteristics (Figure 3).

Can IRF830STRLPBF be paralleled with identical units, and what design considerations apply?

Yes, the IRF830STRLPBF is designed for ease of paralleling, as stated in its features list. Successful parallel operation requires matched gate drive impedance (≤12 Ω per device), symmetrical PCB layout to minimize loop inductance, and individual gate resistors to damp oscillation. Thermal coupling between devices must be uniform to avoid current imbalance; the IRF830STRLPBF's positive R_DS(on) temperature coefficient aids inherent current sharing above 100 °C junction temperature.

IRF830STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 610 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF830STRLPBF FAQ

1.How can I place an order for IRF830STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF830STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF830STRLPBF reliable?

The price and inventory of IRF830STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF830STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF830STRLPBF?

IRF830STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF830STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF830STRLPBF?

For technical support, including IRF830STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830STRLPBF requirements.

6.How does Aetrix verify that IRF830STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF830STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF830STRLPBF?

All IRF830STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF830STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF830STRLPBF part is unused and in its original packaging.

Return procedure for IRF830STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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