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Vishay Siliconix IRF830STRR
- Part No.:
- IRF830STRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF830STRR.pdf
- Description:
- MOSFET N-CH 500V 4.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,883
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Product details
Overview
IRF830STRR from Vishay Siliconix is a 500 V, 4.5 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switching in offline SMPS, AC-DC adapters, and motor control inverters.
For engineers reviewing the IRF830STRR datasheet, IRF830STRR pinout, IRF830STRR application, or IRF830STRR equivalent, this page delivers verified electrical specs, thermal derating data, diode recovery characteristics, and real-world selection guidance for high-reliability 500 V power stage design.
Technical Context
This third-generation silicon power MOSFET uses planar V-groove technology optimized for ruggedness and fast switching. Its 1.5 Ω on-resistance at 10 V gate drive enables low conduction loss in 400–500 V DC bus applications, while 3.5 V/ns peak diode recovery dV/dt rating supports stable operation under hard-switched inductive loads.
The device integrates a co-packaged body diode with 320–640 ns reverse recovery time (trr), 1.0–2.0 μC Qrr, and 1.6 V forward voltage (VSD) at 4.5 A - enabling self-commutated flyback and active clamp topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports full-wave rectified 340 VAC input (480 VDC peak) with margin for surge and ringing. |
| RDS(on) | 1.5 Ω @ VGS = 10 V - delivers ≤3.0 W conduction loss at 4.5 A continuous drain current. |
| Qg | 38 nC - determines gate driver power requirement and switching speed trade-off in 50–100 kHz SMPS designs. |
| EAS | 280 mJ single-pulse avalanche energy - enables unclamped inductive switching without external snubbers in relay drivers. |
| RthJC | 1.7 °C/W junction-to-case - allows 74 W dissipation with heatsink interface ≤0.5 °C/W to maintain TJ < 150 °C. |
| ID (TC = 100 °C) | 2.9 A - defines usable current limit in thermally constrained PCB-mounted applications without heatsink. |
| trr / Qrr | 320–640 ns / 1.0–2.0 μC - constrains minimum dead-time in half-bridge configurations to prevent shoot-through. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G-D-S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | High-impedance MOSFET control terminal; requires ≤±20 V drive and 0.5–2.7 Ω gate resistance for optimal EMI/switching trade-off. |
| Pin 2 (D) | Drain | Main high-side power terminal; internally bonded to large copper drain pad for low-inductance, high-current routing and thermal transfer. |
| Pin 3 (S) | Source | Power return path and gate reference node; internal source inductance (LS = 7.5 nH) impacts turn-on delay and gate oscillation risk. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under transient overloads (e.g., output short-circuit) without catastrophic failure-EAR = 7.4 mJ per pulse. |
| Dynamic dV/dt rating | 3.5 V/ns ensures immunity to false turn-on during high-slew-rate voltage transients in bridge-leg configurations. |
| Fast switching | td(on)/tr/td(off)/tf = 8.2/16/42/16 ns at VDD = 250 V enables >100 kHz operation with minimal switching loss. |
| Low gate charge | Qgs = 5.0 nC and Qgd = 22 nC reduce driver IC stress and improve gate drive efficiency in isolated flyback controllers. |
| Surface mount (D2PAK) | Supports automated assembly and high-power density layout; requires ≥16.1 mm × 10.7 mm copper pad per AN826 recommendation. |
Applications
| Offline AC-DC Adapters | Industrial Motor Drives |
|---|---|
|
Use Scenario: 50–100 W universal-input (90–264 VAC) flyback converter powering industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer into transformer; operates at 65 kHz with ZVS-assisted turn-on. Use Value: 500 V VDS rating accommodates 400 VDC bus with 20% margin; 1.5 Ω RDS(on) limits conduction loss to <1.5 W at full load. |
Use Scenario: Half-bridge inverter driving 120 VDC brushed DC motors in HVAC actuators and valve positioners. IC Role / Device Role / Timing Role: High-side switching element handling bidirectional current during PWM commutation; body diode conducts freewheeling current. Use Value: 320–640 ns trr and 1.6 V VSD minimize freewheeling loss and enable <500 ns dead-time without shoot-through risk. |
| LED Streetlight Drivers | Relay and Solenoid Drivers |
|
Use Scenario: Constant-current buck-boost LED driver for 100–200 W outdoor luminaires operating from 277 VAC line. IC Role / Device Role / Timing Role: Main switching transistor regulating LED string current; subjected to high dv/dt during mains zero-crossing events. Use Value: 3.5 V/ns dV/dt immunity prevents spurious turn-on; repetitive avalanche rating absorbs inductive kickback from boost inductor. |
Use Scenario: Solid-state replacement for electromechanical relays controlling 24–48 VDC solenoids in factory automation panels. IC Role / Device Role / Timing Role: Unclamped inductive switch managing energy dissipation during coil de-energization. Use Value: 280 mJ EAS sustains repeated 4.5 A inductive turn-off without snubber; 18 A pulsed drain current handles peak coil surge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NB50FP | 500 V, 4.5 A, RDS(on) = 1.4 Ω, Qg = 32 nC, TO-220FP package | Through-hole mounting; higher RthJA (65 °C/W) limits PCB-only thermal performance | Preferred where manual assembly or legacy through-hole layout exists; lower Qg improves light-load efficiency. |
| IXTP50N10P | 100 V, 50 A, RDS(on) = 0.022 Ω, TO-220 package - not voltage-compatible | Cannot replace IRF830STRR in 400+ V applications due to 100 V VDS limit | Only suitable for low-voltage (<120 VDC) motor drives; misapplication would cause immediate breakdown. |
Compared with STP5NB50FP, IRF830STRR offers superior thermal performance in surface-mount layouts (RthJC = 1.7 °C/W vs. 2.5 °C/W) and higher avalanche robustness (EAS = 280 mJ vs. 180 mJ), while IXTP50N10P is electrically incompatible above 100 V and must be excluded from 500 V designs.
Availability
IRF830STRR is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and LED streetlight drivers requiring stable component supply across extended production lifecycles.
Supply support for IRF830STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF830STRR belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness, fast switching, and cost-effective performance in 400–500 V offline power conversion systems.
FAQ
What is the maximum continuous drain current for IRF830STRR at 100 °C case temperature?
The IRF830STRR supports 2.9 A continuous drain current when the case temperature (TC) is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains below 150 °C under steady-state conditions. Designers must verify heatsinking and PCB copper area to sustain this current reliably in end equipment.
Does IRF830STRR have avalanche capability, and how is it rated?
Yes, the IRF830STRR is repetitively avalanche rated with 7.4 mJ per pulse (EAR) and 280 mJ single-pulse energy (EAS). These ratings are validated per test condition VDD = 50 V, L = 24 mH, Rg = 25 Ω, IAS = 4.5 A. The device can safely absorb inductive energy during unclamped switching events without degradation, making it suitable for relay drivers and flyback converters without external snubbers.
What is the gate threshold voltage range for IRF830STRR, and why does it matter?
The gate-source threshold voltage (VGS(th)) for IRF830STRR is specified from 2.0 V to 4.0 V at TJ = 25 °C. This range indicates the minimum gate voltage required to begin channel conduction. A wide threshold window necessitates robust gate drive design-especially at elevated temperatures-to ensure full enhancement and avoid linear-mode operation, which increases power dissipation and risk of thermal runaway.
Can IRF830STRR be used in parallel configurations, and what design considerations apply?
Yes, the IRF830STRR is designed for ease of paralleling, as confirmed by Vishay's datasheet features. Key requirements include matched gate drive impedance (≤2 Ω per device), symmetrical PCB layout to minimize loop inductance, and individual gate resistors to dampen oscillation. Thermal coupling between devices must also be managed to prevent current imbalance caused by positive temperature coefficient of RDS(on).
What is the body diode reverse recovery time (trr) of IRF830STRR, and how does it affect half-bridge operation?
The IRF830STRR body diode exhibits a reverse recovery time (trr) of 320–640 ns at TJ = 25 °C, IF = 3.1 A, and dI/dt = 100 A/μs. In half-bridge topologies, this trr directly determines minimum required dead-time between high-side and low-side switching transitions. Insufficient dead-time risks shoot-through, especially at high switching frequencies (>50 kHz), making accurate trr characterization essential for reliable gate timing design.
IRF830STRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 610 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF830STRR FAQ
1.How can I place an order for IRF830STRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF830STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF830STRR reliable?
The price and inventory of IRF830STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF830STRR is usually 5 days.
3.What payment methods are accepted for IRF830STRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF830STRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF830STRR?
IRF830STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF830STRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF830STRR?
For technical support, including IRF830STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF830STRR requirements.
6.How does Aetrix verify that IRF830STRR is sourced from the original manufacturer or authorized distributors?
All IRF830STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF830STRR meets industry standards.
7.What is the process for return or replacement of IRF830STRR?
All IRF830STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF830STRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF830STRR part is unused and in its original packaging.
Return procedure for IRF830STRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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