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Vishay Siliconix IRF840ALPBF
- Part No.:
- IRF840ALPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF840ALPBF.pdf
- Description:
- MOSFET N-CH 500V 8A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:62
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Product details
Overview
IRF840ALPBF from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and 510 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS half-bridge and forward topologies.
For engineers reviewing the IRF840ALPBF datasheet, IRF840ALPBF pinout, IRF840ALPBF application, or IRF840ALPBF equivalent, this page delivers verified electrical specs, thermal performance data, body diode recovery characteristics, and real-world SMPS topology compatibility - all confirmed against Vishay's official S21-0901-Rev. E document.
Technical Context
This MOSFET employs planar vertical DMOS technology optimized for rugged high-voltage operation, with fully characterized Ciss (1018 pF), Coss (155 pF), and Crss (8.0 pF) enabling precise snubber and gate drive design. Its 5.0 V/ns peak diode recovery dV/dt rating supports fast-switching inductive load commutation without spurious turn-on.
The device integrates a robust intrinsic body diode with 422–633 ns reverse recovery time (trr) and 2.0–3.0 μC Qrr, validated under 8.0 A, 100 A/μs dI/dt conditions - critical for minimizing switching losses in hard-commutated bridge circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus designs with 25 % safety margin for voltage transients |
| RDS(on) | 0.85 Ω @ VGS = 10 V - enables ≤ 3.3 W conduction loss at 8.0 A continuous drain current |
| Qg | 38 nC - determines gate driver current requirement (~1.9 A peak for 20 ns rise time) |
| EAS | 510 mJ - allows unclamped inductive switching up to 8.0 A without failure |
| tr/tf | 23 ns / 19 ns - supports >500 kHz switching in resonant or phase-shifted topologies |
| RthJC | 1.0 °C/W - enables 125 W power dissipation with ≤125 °C junction rise above case |
| VGS(th) | 2.0–4.0 V - ensures reliable turn-on with standard 10 V gate drivers, not logic-level compatible |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for low thermal resistance (RthJC = 1.0 °C/W); thermally enhanced layout requires ≥16 mm² copper area under drain tab per AN826 guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V drive; 9.0 nC Qgs and 18 nC Qgd define Miller plateau timing and switching behavior |
| D (Drain) | High-side power terminal | Connected to PCB thermal pad; carries full load current and withstands 500 V blocking |
| S (Source) | Reference node & return path | Common return for gate drive and load current; body diode anode ties to source internally |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge (Qg = 38 nC) | Reduces gate driver power loss and simplifies 10 V CMOS/TTL-compatible drive circuitry |
| Enhanced avalanche ruggedness (EAS = 510 mJ) | Eliminates need for external clamping in flyback or forward converter primary switches |
| Characterized Coss eff. = 56 pF | Enables accurate zero-voltage switching (ZVS) timing prediction in resonant LLC converters |
| Body diode trr = 422–633 ns | Minimizes reverse recovery loss during synchronous rectification or freewheeling in bridge legs |
| 150 °C max junction temperature | Supports operation in sealed industrial enclosures without forced air cooling |
Applications
| Offline AC-DC Power Supply | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Primary-side switch in 200–500 W two-transistor forward converter operating from 375 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch handling 8.0 A pulsed drain current with controlled dV/dt during turn-off. Use Value: 510 mJ avalanche energy rating absorbs leakage inductance spikes without snubber redesign. |
Use Scenario: Inverter leg switch in line-interactive UPS delivering 1 kVA output with battery backup. IC Role / Device Role / Timing Role: Half-bridge power stage element switching at 20–50 kHz with bidirectional body diode conduction. Use Value: 422–633 ns trr and 2.0–3.0 μC Qrr limit cross-conduction loss during dead-time transitions. |
| Industrial Motor Drive | High-Voltage DC-DC Converter |
Use Scenario: DC link switch in 400 V input variable-frequency drive feeding 3-phase induction motor. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz inverter output stage. Use Value: 0.85 Ω RDS(on) yields lower conduction loss than comparable 600 V IGBTs below 10 A load current. |
Use Scenario: Primary switch in isolated 48 V to 380 V boost converter for energy storage systems. IC Role / Device Role / Timing Role: High-duty-cycle power switch sustaining 8.0 A continuous current with 125 W dissipation capability. Use Value: 1.0 °C/W RthJC enables direct heatsink mounting without thermal interface material degradation concerns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK50ZFP | Zener-protected superjunction MOSFET; 500 V, 7.5 A, RDS(on) = 0.75 Ω, Qg = 32 nC | Lower gate charge improves efficiency at >100 kHz but lacks specified avalanche energy rating | Prefer when high-frequency ZVS operation is prioritized over unclamped inductive stress tolerance |
| FQP5N50CTU | 500 V, 5.1 A, RDS(on) = 1.4 Ω, Qg = 25 nC, TO-220 package | Lower current rating and higher on-resistance; no D2PAK thermal advantage | Select only if board space permits TO-220 mounting and 5.1 A peak current suffices |
Compared with STP8NK50ZFP and FQP5N50CTU, IRF840ALPBF offers superior avalanche survivability (510 mJ vs. unspecified / 250 mJ) and higher continuous current (8.0 A vs. 7.5 A / 5.1 A), making it optimal for ruggedized offline SMPS where transient overload immunity is critical.
Availability
IRF840ALPBF is available at Aetrix Electronics and suitable for offline AC-DC power supplies, uninterruptible power systems, and industrial motor drives requiring stable component supply across extended production lifecycles.
Supply support for IRF840ALPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF840ALPBF belongs to Vishay's high-voltage planar MOSFET product line, engineered for robustness in offline switch-mode power conversion - emphasizing avalanche energy, dV/dt immunity, and thermal stability in demanding 500 V applications.
FAQ
What is the maximum continuous drain current for IRF840ALPBF at 100 °C case temperature?
The IRF840ALPBF supports 5.1 A continuous drain current at TC = 100 °C, derating linearly from 8.0 A at 25 °C using the 1.0 W/°C derating factor specified in the Absolute Maximum Ratings table. This value reflects thermal limits under sustained conduction, not pulse conditions.
Does IRF840ALPBF have a built-in gate protection diode?
No, the IRF840ALPBF does not integrate a gate protection diode. Its gate-source voltage rating is ±30 V, and external Zener clamping is recommended in high-noise environments. The datasheet specifies ±100 nA gate leakage at ±30 V, confirming absence of integrated ESD protection beyond standard process robustness.
What is the typical body diode forward voltage of IRF840ALPBF at 8.0 A and 25 °C?
The typical body diode forward voltage (VSD) of IRF840ALPBF is 2.0 V at TJ = 25 °C, IS = 8.0 A, and VGS = 0 V. This value is measured across source-to-drain terminals with the MOSFET off and is critical for calculating freewheeling losses in bridge configurations.
Can IRF840ALPBF be used in place of IRF840APbF?
Yes, IRF840ALPBF is the lead-free and halogen-free variant of IRF840APbF, sharing identical electrical specifications, thermal ratings, and D2PAK package dimensions. The "L" suffix denotes RoHS-compliant termination; both parts are functionally interchangeable in new designs and legacy replacements.
What is the effective output capacitance (Coss eff.) of IRF840ALPBF and why is it important?
The effective output capacitance (Coss eff.) of IRF840ALPBF is 56 pF, defined as the fixed capacitance yielding the same VDS charging time as actual Coss during 0–80 % VDS rise. It directly impacts zero-voltage switching (ZVS) timing and resonant tank design in LLC and phase-shifted full-bridge converters.
IRF840ALPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1018 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
IRF840ALPBF FAQ
1.How can I place an order for IRF840ALPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF840ALPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF840ALPBF reliable?
The price and inventory of IRF840ALPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840ALPBF is usually 5 days.
3.What payment methods are accepted for IRF840ALPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840ALPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF840ALPBF?
IRF840ALPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF840ALPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF840ALPBF?
For technical support, including IRF840ALPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840ALPBF requirements.
6.How does Aetrix verify that IRF840ALPBF is sourced from the original manufacturer or authorized distributors?
All IRF840ALPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840ALPBF meets industry standards.
7.What is the process for return or replacement of IRF840ALPBF?
All IRF840ALPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840ALPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF840ALPBF part is unused and in its original packaging.
Return procedure for IRF840ALPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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