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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840ASTRL

Name: IRF840ASTRL
Brand: Vishay Siliconix
SKU: IRF840ASTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF840ASTRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF840ASTRL.pdf

Description:: MOSFET N-CH 500V 8A D2PAK

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Product details

Overview

IRF840ASTRL from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and 510 mJ single-pulse avalanche energy-designed for high-voltage switching in offline SMPS half-bridge and full-bridge topologies.

For engineers reviewing the IRF840ASTRL datasheet, IRF840ASTRL pinout, IRF840ASTRL application, or IRF840ASTRL equivalent, key selection criteria include its 500 V V_DS, 125 W P_D at T_C = 25 °C, 1.0 °C/W R_thJC, robust dV/dt immunity (5.0 V/ns), and body diode recovery time (422–633 ns) critical for hard-switched converters.

Technical Context

This device uses planar vertical DMOS technology with fully characterized avalanche capability and effective output capacitance (C_{oss eff.} = 56 pF). Its gate threshold voltage (2.0–4.0 V) and low Q_gd/Q_gs ratio (18/9.0 nC) support stable turn-on in high-dV/dt environments.

The IRF840ASTRL integrates a fast-recovery body diode (t_rr = 422–633 ns, Q_rr = 2.0–3.0 μC) and is rated for repetitive avalanche current (I_AR = 8.0 A) under defined test conditions-enabling reliable operation in unclamped inductive switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus
R_DS(on)	0.85 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 4.8 A continuous drain current
Q_g	38 nC - determines gate drive power requirement and switching speed in hard-switched topologies
E_AS	510 mJ - specifies single-pulse avalanche ruggedness for transient overvoltage protection without external snubbers
R_thJC	1.0 °C/W - allows direct heatsink mounting for thermal management of 125 W dissipation at case temperature
t_rr	422–633 ns - defines body diode reverse recovery window affecting cross-conduction losses in bridge legs
dV/dt rating	5.0 V/ns - ensures immunity to parasitic turn-on during high-slew-rate switching transitions

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current, high-voltage PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; low input capacitance (C_iss = 1018 pF) reduces driver loading
D (Drain)	High-side power switch node	Connected to exposed thermal pad; carries full load current and withstands 500 V blocking
S (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; ties to power ground in half-bridge configurations

Key Features

Feature	Design Value
Low gate charge (Q_g = 38 nC)	Reduces gate driver power consumption and enables use of low-cost discrete or integrated drivers
Fully characterized avalanche performance	Validated 510 mJ E_AS and 8.0 A I_AR allow safe operation under inductive fault conditions without derating
Effective C_oss = 56 pF	Enables accurate soft-switching timing prediction and minimizes capacitive turn-off losses in resonant converters
Body diode t_rr = 422–633 ns	Supports synchronous rectification in secondary-side designs and limits shoot-through risk in bridge configurations
RoHS-compliant Pb-free construction	Meets global environmental compliance requirements without sacrificing high-voltage ruggedness or thermal performance

Applications

Offline SMPS Primary Switch	UPS Inverter Stage
Use Scenario: High-efficiency 200–500 W AC/DC converter using two-transistor forward or full-bridge topology with 375–400 V DC bus. IC Role / Device Role / Timing Role: Main high-side power switch handling 500 V blocking and 8 A peak current at 50–100 kHz. Use Value: 0.85 Ω R_DS(on) and 125 W power dissipation enable compact heatsink design; 510 mJ E_AS eliminates need for clamping circuits during startup surges.	Use Scenario: 1–3 kVA line-interactive UPS inverter delivering clean 50/60 Hz sine wave output from battery or grid. IC Role / Device Role / Timing Role: Half-bridge leg switch operating in 180° complementary mode with dead-time control. Use Value: 5.0 V/ns dV/dt rating prevents false triggering during bus transients; 422–633 ns body diode t_rr ensures clean commutation and low crossover loss.
Industrial Motor Drive Output Stage	High-Voltage DC-DC Converter
Use Scenario: 400 V DC bus motor controller for HVAC blowers or pump drives requiring >5 A continuous output current. IC Role / Device Role / Timing Role: Low-side or high-side switching element in 3-phase inverter leg, driven by isolated gate driver. Use Value: 1.0 °C/W R_thJC enables direct heatsink attachment for sustained 5.1 A operation at 100 °C case temperature.	Use Scenario: Isolated 48 V to 380 V boost converter in telecom or EV charging infrastructure. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or LLC resonant topology. Use Value: Fully characterized C_iss/C_oss/C_rss values (1018/155/8.0 pF) support precise resonant tank modeling and ZVS optimization.

Offline SMPS Primary Switch

UPS Inverter Stage

Use Scenario: High-efficiency 200–500 W AC/DC converter using two-transistor forward or full-bridge topology with 375–400 V DC bus.

IC Role / Device Role / Timing Role: Main high-side power switch handling 500 V blocking and 8 A peak current at 50–100 kHz.

Use Value: 0.85 Ω R_DS(on) and 125 W power dissipation enable compact heatsink design; 510 mJ E_AS eliminates need for clamping circuits during startup surges.

Use Scenario: 1–3 kVA line-interactive UPS inverter delivering clean 50/60 Hz sine wave output from battery or grid.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating in 180° complementary mode with dead-time control.

Use Value: 5.0 V/ns dV/dt rating prevents false triggering during bus transients; 422–633 ns body diode t_rr ensures clean commutation and low crossover loss.

Industrial Motor Drive Output Stage

High-Voltage DC-DC Converter

Use Scenario: 400 V DC bus motor controller for HVAC blowers or pump drives requiring >5 A continuous output current.

IC Role / Device Role / Timing Role: Low-side or high-side switching element in 3-phase inverter leg, driven by isolated gate driver.

Use Value: 1.0 °C/W R_thJC enables direct heatsink attachment for sustained 5.1 A operation at 100 °C case temperature.

Use Scenario: Isolated 48 V to 380 V boost converter in telecom or EV charging infrastructure.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or LLC resonant topology.

Use Value: Fully characterized C_iss/C_oss/C_rss values (1018/155/8.0 pF) support precise resonant tank modeling and ZVS optimization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NB50FP	500 V, 5.5 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-220FP package	Lower current rating and higher on-resistance; smaller package limits thermal headroom	Prefer when board space is constrained and peak current ≤5.5 A; verify thermal margin at 100 °C ambient
IXTH8N50L2	500 V, 8 A, R_DS(on) = 0.75 Ω, Q_g = 32 nC, TO-247 package	Lower R_DS(on) and gate charge; through-hole TO-247 offers superior thermal performance but larger footprint	Choose for higher efficiency or elevated ambient temperatures; requires PCB layout change due to leaded package

Compared with STP5NB50FP and IXTH8N50L2, the IRF840ASTRL delivers balanced conduction/switching loss trade-offs in surface-mount form factor, with verified avalanche ruggedness essential for industrial SMPS reliability-making it optimal where D2PAK thermal interface and 500 V system margin are prioritized.

Availability

IRF840ASTRL is available at Aetrix Electronics and suitable for offline switch-mode power supplies, uninterruptible power systems, and high-speed industrial power switching requiring stable component supply across extended production lifecycles.

Supply support for IRF840ASTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.

The IRF840ASTRL belongs to Vishay's high-voltage power MOSFET product line engineered for rugged, high-efficiency switching in offline AC/DC and DC/DC conversion-emphasizing avalanche capability, thermal stability, and consistent parametric performance across temperature.

FAQ

What is the maximum continuous drain current rating for IRF840ASTRL at 100 °C case temperature?

The IRF840ASTRL has a maximum continuous drain current (I_D) of 5.1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from the 8.0 A value at 25 °C reflects thermal limitations of the D2PAK package and must be respected in thermal design to avoid junction overheating. The IRF840ASTRL's R_thJC of 1.0 °C/W directly informs heatsink sizing for this condition.

Does IRF840ASTRL support avalanche operation, and what are the validated limits?

Yes, the IRF840ASTRL is fully characterized for avalanche operation: single-pulse avalanche energy (E_AS) is 510 mJ, and repetitive avalanche current (I_AR) is 8.0 A under defined test conditions (L = 16 mH, R_g = 25 Ω, starting T_J = 25 °C). These values are measured per JEDEC standards and documented in Vishay's datasheet 91066. The IRF840ASTRL's robustness in unclamped inductive switching makes it suitable for flyback and forward converter primary switches.

What is the gate threshold voltage range for IRF840ASTRL, and how does it affect drive requirements?

IRF840ASTRL has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious gate excursions. Because the IRF840ASTRL is not a logic-level device, 5 V microcontroller outputs cannot fully enhance it-designs must use ≥10 V gate drive to achieve the specified 0.85 Ω R_DS(on).

How does the body diode performance of IRF840ASTRL impact its use in bridge configurations?

The IRF840ASTRL's body diode has a reverse recovery time (t_rr) of 422–633 ns and recovered charge (Q_rr) of 2.0–3.0 μC at T_J = 25 °C. In half-bridge or full-bridge topologies, this directly influences commutation losses and risk of shoot-through during dead-time intervals. The IRF840ASTRL's specified t_rr enables predictable timing margins and supports moderate-frequency (<100 kHz) hard-switched operation without external diode paralleling.

Is IRF840ASTRL RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRF840ASTRL is RoHS-compliant and halogen-free, as confirmed by Vishay's material categorization documentation (doc?99912). The 'PbF' suffix in IRF840ASTRLPbF explicitly denotes lead (Pb)-free termination-consistent with EU RoHS Directive 2011/65/EU and China RoHS. The IRF840ASTRL meets all applicable substance restrictions and is qualified for lead-free reflow soldering per J-STD-020.

IRF840ASTRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1018 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF840ASTRL FAQ

1.How can I place an order for IRF840ASTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840ASTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840ASTRL reliable?

The price and inventory of IRF840ASTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840ASTRL is usually 5 days.

3.What payment methods are accepted for IRF840ASTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840ASTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840ASTRL?

IRF840ASTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840ASTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840ASTRL?

For technical support, including IRF840ASTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840ASTRL requirements.

6.How does Aetrix verify that IRF840ASTRL is sourced from the original manufacturer or authorized distributors?

All IRF840ASTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840ASTRL meets industry standards.

7.What is the process for return or replacement of IRF840ASTRL?

All IRF840ASTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF840ASTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840ASTRL part is unused and in its original packaging.

Return procedure for IRF840ASTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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