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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840ASTRLPBF

Name: IRF840ASTRLPBF
Brand: Vishay Siliconix
SKU: IRF840ASTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF840ASTRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF840ASTRLPBF.pdf

Description:: MOSFET N-CH 500V 8A D2PAK

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Product details

Overview

IRF840ASTRLPBF from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in SMPS and UPS systems. It delivers R_DS(on) = 0.85 Ω at V_GS = 10 V, Q_g = 38 nC, and robust 510 mJ single-pulse avalanche energy - enabling reliable operation in hard-switched forward and bridge topologies.

For engineers reviewing the IRF840ASTRLPBF datasheet, IRF840ASTRLPBF pinout, IRF840ASTRLPBF application, or IRF840ASTRLPBF equivalent, key selection criteria include its 500 V V_DS, 125 W P_D at T_C = 25 °C, 1.0 °C/W R_thJC, body diode t_rr = 422–633 ns, and dV/dt ruggedness of 5.0 V/ns - all critical for high-reliability industrial power conversion.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized C_iss (1018 pF), C_oss (155 pF), and C_rss (8.0 pF) to support accurate snubber and gate drive design. Its gate threshold voltage (2.0–4.0 V) and low Q_gs/Q_gd ratio (9.0/18 nC) enable stable turn-on under noisy conditions and reduce Miller-induced shoot-through risk.

The device integrates an intrinsic body diode rated for 8.0 A continuous and 32 A pulsed current, with V_SD = 2.0 V at I_S = 8.0 A and controlled reverse recovery (Q_rr = 2.0–3.0 μC). Avalanche capability is validated per JEDEC JESD24-1, supporting unclamped inductive switching up to I_AS = 8.0 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in 400 V DC bus and universal AC-input SMPS
R_DS(on)	0.85 Ω @ V_GS = 10 V - limits conduction loss to ≤6.9 W at 8.0 A RMS in continuous conduction mode
Q_g	38 nC - determines gate driver peak current requirement (~380 mA for 100 ns rise time)
E_AS	510 mJ - enables safe operation during transformer leakage energy dissipation without external clamping
t_rr	422–633 ns - defines minimum dead-time needed to prevent cross-conduction in half/full-bridge phase-legs
R_thJC	1.0 °C/W - allows direct heatsink mounting for thermal management with ≤125 °C junction rise at full 125 W dissipation
dV/dt	5.0 V/ns - ensures immunity to parasitic turn-on in high-dV/dt environments like LLC resonant converters

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated drain tab (pin 2), standard 3-pin layout, and 1.78–2.79 mm lead length per JEDEC MS-013. Thermal pad on backside requires solder paste stencil design per Vishay AN826 guidelines.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 9.0 nC Q_gs sets Miller plateau duration and influences dv/dt immunity
D (Drain)	High-side power terminal	Connected to heatsink via exposed copper tab; carries full load current and withstands 500 V transients
S (Source)	Reference node / return path	Common source for gate drive loop; must be low-inductance to minimize ringing and false triggering

Key Features

Feature	Design Value
Low Q_g (38 nC)	Reduces gate driver power loss and simplifies drive circuitry - no need for high-current buffer stages
Fully characterized C_oss (155 pF)	Enables precise soft-switching timing prediction in resonant topologies and accurate snubber sizing
Avalanche-rated (E_AS = 510 mJ)	Eliminates need for external RCD clamp in two-transistor forward converters operating up to 8.0 A I_AS
Body diode t_rr spec (422–633 ns)	Supports synchronous rectification control timing and prevents shoot-through in bridge configurations
1.0 °C/W R_thJC	Permits direct thermal coupling to heatsink - achieves 125 W dissipation with ≤125 °C ΔT at case

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 500 W two-transistor forward converter with 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch handling 8.0 A peak drain current and absorbing transformer leakage energy. Use Value: 510 mJ E_AS rating eliminates external clamp diode, reducing BOM count and board area by 12 %.	Use Scenario: Inverter stage H-bridge in 1 kVA line-interactive UPS with battery backup. IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional 500 V/8.0 A power flow during transfer and boost modes. Use Value: 5.0 V/ns dV/dt ruggedness prevents spurious turn-on during fast bus transitions, improving system reliability.
High-Speed Power Switching	Industrial Motor Drive Stage
Use Scenario: Solid-state relay replacement in PLC output module switching 240 V AC resistive loads. IC Role / Device Role / Timing Role: Fast-turning discrete switch with <26 ns t_d(off) and <19 ns t_f for sub-100 ns switching cycles. Use Value: 38 nC Q_g enables clean 100 kHz switching with minimal gate drive loss (<150 mW).	Use Scenario: Brake chopper in 3 kW servo drive dissipating regenerative energy into dynamic braking resistor. IC Role / Device Role / Timing Role: Energy-dumping switch conducting 8.0 A continuously with 125 W thermal limit. Use Value: 1.0 °C/W R_thJC allows direct heatsink mounting - reduces thermal interface layers and improves long-term power cycling life.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 500 W two-transistor forward converter with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling 8.0 A peak drain current and absorbing transformer leakage energy.

Use Value: 510 mJ E_AS rating eliminates external clamp diode, reducing BOM count and board area by 12 %.

Use Scenario: Inverter stage H-bridge in 1 kVA line-interactive UPS with battery backup.

IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional 500 V/8.0 A power flow during transfer and boost modes.

Use Value: 5.0 V/ns dV/dt ruggedness prevents spurious turn-on during fast bus transitions, improving system reliability.

High-Speed Power Switching

Industrial Motor Drive Stage

Use Scenario: Solid-state relay replacement in PLC output module switching 240 V AC resistive loads.

IC Role / Device Role / Timing Role: Fast-turning discrete switch with <26 ns t_d(off) and <19 ns t_f for sub-100 ns switching cycles.

Use Value: 38 nC Q_g enables clean 100 kHz switching with minimal gate drive loss (<150 mW).

Use Scenario: Brake chopper in 3 kW servo drive dissipating regenerative energy into dynamic braking resistor.

IC Role / Device Role / Timing Role: Energy-dumping switch conducting 8.0 A continuously with 125 W thermal limit.

Use Value: 1.0 °C/W R_thJC allows direct heatsink mounting - reduces thermal interface layers and improves long-term power cycling life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V, 7.0 A, R_DS(on) = 0.95 Ω, Q_g = 34 nC, TO-220FP package	Lower current rating and through-hole mounting - unsuitable for high-density SMT designs	Select when cost-sensitive prototyping favors through-hole assembly and lower peak current suffices
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.027 Ω, D2PAK - not voltage-compatible	Insufficient V_DS margin for 400 V bus - risks catastrophic failure in same topology	Reject for 500 V applications; only consider for low-voltage, high-current motor control where V_DS ≤ 100 V

Compared with STP8NK50ZFP and IXTP50N10P, IRF840ASTRLPBF uniquely balances 500 V rating, 8.0 A current, D2PAK SMT compatibility, and 510 mJ avalanche energy - making it the only viable option for space-constrained, high-reliability 400 V DC bus SMPS and UPS inverters.

Availability

IRF840ASTRLPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed industrial switching applications requiring stable component supply across multi-year production cycles.

Supply support for IRF840ASTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF840AS family was designed specifically for high-voltage, medium-power switching in offline AC/DC converters and UPS systems - emphasizing avalanche ruggedness, low gate charge, and thermally efficient D2PAK packaging.

FAQ

What is the maximum continuous drain current for IRF840ASTRLPBF at 100 °C case temperature?

The maximum continuous drain current for IRF840ASTRLPBF is 5.1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the -55 to +150 °C operating range. The 8.0 A rating applies only at T_C = 25 °C.

Does IRF840ASTRLPBF have a fully characterized body diode, and what are its key parameters?

Yes, IRF840ASTRLPBF includes a fully characterized intrinsic body diode with V_SD = 2.0 V at I_S = 8.0 A and T_J = 25 °C, t_rr = 422–633 ns, and Q_rr = 2.0–3.0 μC. These values are measured under standardized conditions (I_F = 8.0 A, dI/dt = 100 A/μs) and support accurate dead-time calculation in bridge topologies.

What is the gate threshold voltage range for IRF840ASTRLPBF, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for IRF840ASTRLPBF is 2.0–4.0 V at I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers but indicates insufficient margin for 5 V logic-level control. Reliable enhancement-mode operation requires ≥8 V drive to ensure full R_DS(on) conduction and avoid linear-region heating.

Can IRF840ASTRLPBF be used in avalanche mode, and what is its validated single-pulse energy rating?

Yes, IRF840ASTRLPBF is fully rated for repetitive and single-pulse avalanche operation. Its validated single-pulse avalanche energy (E_AS) is 510 mJ under test conditions of L = 16 mH, R_g = 25 Ω, and I_AS = 8.0 A. This rating is confirmed per JEDEC JESD24-1 and supports unclamped inductive switching in forward converter topologies.

What thermal resistance values apply to IRF840ASTRLPBF, and how do they impact heatsink design?

IRF840ASTRLPBF has R_thJC = 1.0 °C/W (max) and R_thJA = 40 °C/W (max, PCB mount). The low R_thJC enables direct attachment to heatsinks, while R_thJA assumes 1"² FR-4 PCB. For 125 W dissipation, a heatsink with ≤125 °C/W total thermal resistance (including interface) is required to maintain T_J ≤ 150 °C.

IRF840ASTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1018 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF840ASTRLPBF FAQ

1.How can I place an order for IRF840ASTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840ASTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840ASTRLPBF reliable?

The price and inventory of IRF840ASTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840ASTRLPBF is usually 5 days.

3.What payment methods are accepted for IRF840ASTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840ASTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840ASTRLPBF?

IRF840ASTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840ASTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840ASTRLPBF?

For technical support, including IRF840ASTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840ASTRLPBF requirements.

6.How does Aetrix verify that IRF840ASTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF840ASTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840ASTRLPBF meets industry standards.

7.What is the process for return or replacement of IRF840ASTRLPBF?

All IRF840ASTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840ASTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840ASTRLPBF part is unused and in its original packaging.

Return procedure for IRF840ASTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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