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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840ASTRR

Name: IRF840ASTRR
Brand: Vishay Siliconix
SKU: IRF840ASTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF840ASTRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF840ASTRR.pdf

Description:: MOSFET N-CH 500V 8A D2PAK

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Product details

Overview

IRF840ASTRR from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and 510 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS half-bridge and full-bridge topologies.

For engineers reviewing the IRF840ASTRR datasheet, IRF840ASTRR pinout, IRF840ASTRR application, or IRF840ASTRR equivalent, key selection criteria include its 500 V V_DS, 125 W P_D at T_C = 25 °C, 1.0 °C/W R_thJC, body diode recovery time of 422–633 ns, and RoHS-compliant lead-free/halogen-free construction.

Technical Context

This device implements a planar vertical DMOS structure optimized for high-voltage unclamped inductive switching, with fully characterized dynamic dV/dt ruggedness up to 5.0 V/ns and specified repetitive avalanche capability (I_AR = 8.0 A, E_AR = 13 mJ). Its gate threshold voltage (2.0–4.0 V) and low Q_gd/Q_gs ratio (18/9.0 nC) support stable hard-switching operation.

The integrated body diode exhibits 2.0 V forward drop at 8.0 A and 25 °C, with reverse recovery charge Q_rr of 2.0–3.0 μC-critical for minimizing commutation losses in resonant and phase-shifted topologies where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus applications
R_DS(on)	0.85 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 4.8 A continuous drain current
Q_g	38 nC - determines gate drive power requirement and switching speed in hard-switched converters
E_AS	510 mJ - specifies maximum unclamped inductive energy absorption without failure
R_thJC	1.0 °C/W - allows direct thermal coupling to heatsink for high-power density designs
I_D (T_C = 100 °C)	5.1 A - defines usable current derating under sustained high-temperature PCB mounting
trr	422–633 ns - impacts turn-on losses and EMI when body diode conducts during dead time

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 2.0–4.0 V V_GS(th) ensures reliable turn-on with standard PWM controllers
D (Drain)	High-voltage power terminal	Connected to 500 V DC bus; requires creepage/clearance compliance per IEC 62368-1
S (Source)	Reference node / return path	Serves as local ground reference for gate driver; ties to source of synchronous rectifier or controller IC

Key Features

Feature	Design Value
Low Q_g (38 nC)	Reduces gate drive power dissipation and simplifies driver IC selection in high-frequency SMPS
Specified avalanche ruggedness	Enables robust operation in inductive load switching without external snubbers in UPS and motor drives
Effective C_oss = 56 pF	Provides predictable turn-off timing and reduces voltage overshoot during hard switching
Body diode Q_rr = 2.0–3.0 μC	Lowers commutation losses in bridge configurations where freewheeling occurs across internal diode
RoHS-compliant & halogen-free	Meets IPC-1752A material declaration requirements for industrial and telecom end equipment

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 500 W offline two-transistor forward converter operating at 100 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET handling 400 V DC input with synchronous rectification on secondary side. Use Value: 510 mJ E_AS withstands transformer leakage inductance spikes; 0.85 Ω R_DS(on) limits conduction loss to <1.5 W at full load.	Use Scenario: Inverter stage in line-interactive UPS delivering 1 kVA output with battery backup. IC Role / Device Role / Timing Role: Half-bridge switching element converting 360–400 V DC bus to 230 V AC output via SPWM modulation. Use Value: 5.0 V/ns dV/dt rating prevents false triggering during fast voltage transitions; 8.0 A I_D supports peak surge currents during brownout recovery.
High-Speed Power Switching	Industrial Motor Drive Stage
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output module switching 240 V AC loads. IC Role / Device Role / Timing Role: Isolated high-side switch controlled via optocoupled gate driver with 100 ns propagation delay. Use Value: 32 A I_DM handles 10× inrush current of solenoid valves; 1.0 °C/W R_thJC enables compact heatsink integration.	Use Scenario: Brake chopper circuit dissipating regenerative energy from 3-phase 400 V AC induction motor during rapid deceleration. IC Role / Device Role / Timing Role: Energy-dumping switch activated by comparator when DC bus exceeds 450 V threshold. Use Value: Repetitive avalanche rating (I_AR = 8.0 A, E_AR = 13 mJ) sustains repeated 50 ms overvoltage events without degradation.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 500 W offline two-transistor forward converter operating at 100 kHz.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET handling 400 V DC input with synchronous rectification on secondary side.

Use Value: 510 mJ E_AS withstands transformer leakage inductance spikes; 0.85 Ω R_DS(on) limits conduction loss to <1.5 W at full load.

Use Scenario: Inverter stage in line-interactive UPS delivering 1 kVA output with battery backup.

IC Role / Device Role / Timing Role: Half-bridge switching element converting 360–400 V DC bus to 230 V AC output via SPWM modulation.

Use Value: 5.0 V/ns dV/dt rating prevents false triggering during fast voltage transitions; 8.0 A I_D supports peak surge currents during brownout recovery.

High-Speed Power Switching

Industrial Motor Drive Stage

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output module switching 240 V AC loads.

IC Role / Device Role / Timing Role: Isolated high-side switch controlled via optocoupled gate driver with 100 ns propagation delay.

Use Value: 32 A I_DM handles 10× inrush current of solenoid valves; 1.0 °C/W R_thJC enables compact heatsink integration.

Use Scenario: Brake chopper circuit dissipating regenerative energy from 3-phase 400 V AC induction motor during rapid deceleration.

IC Role / Device Role / Timing Role: Energy-dumping switch activated by comparator when DC bus exceeds 450 V threshold.

Use Value: Repetitive avalanche rating (I_AR = 8.0 A, E_AR = 13 mJ) sustains repeated 50 ms overvoltage events without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V, 7.5 A, R_DS(on) = 0.95 Ω, Q_g = 32 nC, TO-220FP package	Lower thermal resistance not available; requires through-hole mounting and larger PCB footprint	Preferred where cost-sensitive designs accept higher R_DS(on) and through-hole assembly
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 105 nC, TO-220 package	Insufficient V_DS rating for 400 V DC bus; unsuitable for offline SMPS primary side	Only viable in low-voltage (<100 V) DC-DC stages requiring high current and low conduction loss

Compared with STP8NK50ZFP, IRF840ASTRR offers superior thermal performance (1.0 vs. 2.5 °C/W R_thJC) and surface-mount compatibility; versus IXTP50N10P, it provides essential 500 V rating but trades off higher R_DS(on) for voltage capability and smaller footprint.

Availability

IRF840ASTRR is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed industrial switching applications requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.

Supply support for IRF840ASTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF840AS family was developed for high-voltage, medium-current switching in offline power conversion, emphasizing avalanche ruggedness, gate drive simplicity, and thermal efficiency in compact surface-mount packages.

FAQ

What is the maximum junction temperature rating for the IRF840ASTRR?

The IRF840ASTRR has an operating junction and storage temperature range of -55 °C to +150 °C. This 150 °C maximum junction temperature enables reliable operation in high-ambient environments such as enclosed UPS enclosures or industrial motor drive cabinets when mounted on adequately sized copper areas per Vishay's recommended D2PAK pad layout.

Does the IRF840ASTRR have a built-in body diode, and what are its key parameters?

Yes, the IRF840ASTRR integrates a body diode with V_SD = 2.0 V at 8.0 A and 25 °C, reverse recovery time t_rr = 422–633 ns, and Q_rr = 2.0–3.0 μC. These values are measured under standardized conditions (T_J = 25 °C, I_F = 8.0 A, dI/dt = 100 A/μs) and directly impact efficiency in bridge topologies where the diode conducts during dead-time intervals.

What is the gate threshold voltage range for the IRF840ASTRR, and how does it affect drive requirements?

The IRF840ASTRR has a gate-source threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA. This range ensures turn-on with standard 5 V or 10 V logic-level drivers while maintaining noise immunity against spurious gate excitation in noisy power environments-critical for stable operation in SMPS and UPS inverters.

Can the IRF840ASTRR be used in avalanche mode, and what are its rated avalanche capabilities?

Yes, the IRF840ASTRR is fully characterized for avalanche operation: single-pulse E_AS = 510 mJ and repetitive I_AR = 8.0 A with E_AR = 13 mJ. These ratings are validated per JEDEC JESD24-11 test conditions and allow safe operation in unclamped inductive switching circuits like relay drivers or transformer-coupled gate drives without external snubbers.

What package type is used for the IRF840ASTRR, and how does it impact thermal design?

The IRF840ASTRR uses the D2PAK (TO-263) surface-mount package with an exposed drain pad. Its 1.0 °C/W maximum junction-to-case thermal resistance requires direct soldering of the drain tab to ≥1 in² FR-4 copper area (per Vishay AN826) to achieve rated 125 W power dissipation-enabling compact, high-power-density layouts in space-constrained SMPS and UPS modules.

IRF840ASTRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1018 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF840ASTRR FAQ

1.How can I place an order for IRF840ASTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840ASTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840ASTRR reliable?

The price and inventory of IRF840ASTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840ASTRR is usually 5 days.

3.What payment methods are accepted for IRF840ASTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840ASTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840ASTRR?

IRF840ASTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840ASTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840ASTRR?

For technical support, including IRF840ASTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840ASTRR requirements.

6.How does Aetrix verify that IRF840ASTRR is sourced from the original manufacturer or authorized distributors?

All IRF840ASTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840ASTRR meets industry standards.

7.What is the process for return or replacement of IRF840ASTRR?

All IRF840ASTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF840ASTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840ASTRR part is unused and in its original packaging.

Return procedure for IRF840ASTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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