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Vishay Siliconix IRF840ASTRRPBF
- Part No.:
- IRF840ASTRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF840ASTRRPBF.pdf
- Description:
- MOSFET N-CH 500V 8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:725
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Product details
Overview
IRF840ASTRRPBF from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and 510 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS half-bridge and full-bridge topologies.
For engineers reviewing the IRF840ASTRRPBF datasheet, IRF840ASTRRPBF pinout, IRF840ASTRRPBF application, or IRF840ASTRRPBF equivalent, key selection criteria include its 1.0 °C/W junction-to-case thermal resistance, 5.0 V/ns peak diode recovery dV/dt rating, and validated unclamped inductive switching performance up to 8.0 A repetitive avalanche current.
Technical Context
This device employs a planar vertical DMOS structure optimized for high-voltage ruggedness and fast switching. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V gate drive compatibility, while the 9.0 nC gate-source and 18 nC gate-drain charges support predictable turn-on/turn-off timing in hard-switched converters.
The integrated body diode exhibits 422–633 ns reverse recovery time and 2.0–3.0 μC Qrr, with specified 2.0 V forward drop at 8.0 A-critical for synchronous rectification evaluation and snubberless flyback designs where diode conduction occurs during dead time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus operation with 25 % safety margin in offline SMPS |
| RDS(on) | 0.85 Ω @ VGS = 10 V - limits conduction loss to ≤ 6.9 W at 9.2 A RMS in continuous conduction mode |
| Qg | 38 nC - determines gate driver current requirement of ≥ 3.8 A peak for 10 ns rise time |
| EAS | 510 mJ - enables reliable unclamped inductive switching in PFC and resonant LLC primary switches |
| RthJC | 1.0 °C/W - allows 125 W dissipation with ≤ 125 °C junction rise above 25 °C case temperature |
| dV/dt | 5.0 V/ns - defines maximum allowable voltage transient rate across drain-source during diode recovery |
| ID (TC = 100 °C) | 5.1 A - sets practical current limit for thermally constrained PCB-mount applications |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level signal; 9.0 nC Qgs requires low-impedance drive to minimize switching losses |
| D (Drain) | High-side power terminal | Connected to exposed metal tab; carries full load current and must be soldered to ≥ 1"² copper pour for thermal management |
| S (Source) | Reference node / return path | Provides ground reference for gate drive; source inductance directly impacts switching speed and ringing |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg | 38 nC total gate charge reduces gate driver power demand and simplifies discrete or IC-based drive circuitry |
| Avalanche ruggedness | 510 mJ single-pulse and 13 mJ repetitive avalanche energy enable robust operation under inductive fault conditions |
| Characterized Coss eff. | 56 pF effective output capacitance improves soft-switching predictability in resonant topologies |
| Body diode Qrr | 2.0–3.0 μC reverse recovery charge minimizes commutation losses in bridge-leg configurations |
| RoHS-compliant construction | Lead (Pb)-free and halogen-free per Vishay specification 99912, suitable for industrial and telecom end equipment |
Applications
| Server PSU Half-Bridge | Industrial UPS Inverter |
|---|---|
Use Scenario: Primary-side switching in 3.3 kW server power supply using two-transistor forward topology with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in complementary pair; switched at 100 kHz with 50 % duty cycle and 20 ns dead time. Use Value: 0.85 Ω RDS(on) and 1.0 °C/W RthJC maintain < 105 °C junction temperature under full load without forced air cooling. | Use Scenario: Bidirectional DC-AC inversion stage in 5 kVA industrial uninterruptible power supply with IGBT-like voltage blocking but MOSFET switching speed. IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter leg; subjected to repetitive 8.0 A avalanche current during grid-synchronization transitions. Use Value: Validated 13 mJ repetitive avalanche energy and 5.0 V/ns dV/dt rating prevent parasitic turn-on and ensure reliable commutation at 20 kHz PWM. |
| AC-DC Adapter PFC | Motor Drive Snubberless Flyback |
Use Scenario: Boost switch in active PFC front-end for 1.2 kW medical-grade AC-DC adapter operating at 65 kHz. IC Role / Device Role / Timing Role: Fast-switching power FET with body diode conducting during zero-voltage switching intervals. Use Value: 422–633 ns trr and 2.0 V VSD reduce reverse recovery losses by >35 % versus legacy 500 V MOSFETs in same package. | Use Scenario: Primary switch in isolated flyback converter for HVAC control board, requiring no external snubber due to inherent avalanche capability. IC Role / Device Role / Timing Role: Energy-transfer switch clamped by internal avalanche mechanism during leakage inductance spikes. Use Value: 510 mJ EAS absorbs worst-case 450 V × 1.2 A × 0.95 μs transients without derating or layout changes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK50ZFP | 500 V, 7.5 A, 0.95 Ω RDS(on), 42 nC Qg, TO-220FP package | Higher RDS(on) and gate charge; lower thermal conductivity due to plastic package | Preferred when through-hole mounting and lower cost outweigh surface-mount thermal advantages |
| IXTH8N50L | 500 V, 8.0 A, 0.80 Ω RDS(on), 45 nC Qg, TO-247 package | Lower on-resistance but higher gate charge; larger footprint and higher gate drive power demand | Selected for ultra-low conduction loss in high-duty-cycle applications where PCB space permits TO-247 |
Compared with STP8NK50ZFP and IXTH8N50L, the IRF840ASTRRPBF offers optimal balance of thermal performance (1.0 °C/W), gate drive simplicity (38 nC), and surface-mount reliability-making it preferred for compact, high-power-density SMPS where D2PAK thermal interface is fully utilized.
Availability
IRF840ASTRRPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF840ASTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF840AS family targets high-voltage, medium-current power conversion with emphasis on avalanche ruggedness, characterized dynamic parameters, and RoHS-compliant packaging for mission-critical SMPS and UPS systems.
FAQ
What is the maximum continuous drain current rating for IRF840ASTRRPBF at 100 °C case temperature?
The IRF840ASTRRPBF has a maximum continuous drain current of 5.1 A when the case temperature is maintained at 100 °C. This rating is derived from thermal limitations and ensures safe operation within the 150 °C maximum junction temperature specification. The 5.1 A value reflects derating from the 8.0 A rating at 25 °C case temperature and must be verified against actual PCB thermal design using the 1.0 °C/W junction-to-case thermal resistance. IRF840ASTRRPBF thermal performance is validated with 1" square FR-4 PCB mounting.
Does IRF840ASTRRPBF support logic-level gate drive?
No, IRF840ASTRRPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, and it is specified for full enhancement at VGS = 10 V-requiring a dedicated gate driver or level-shifted 12 V supply. Attempting to drive IRF840ASTRRPBF with 3.3 V or 5 V logic signals results in incomplete turn-on, excessive RDS(on), and thermal runaway. IRF840ASTRRPBF gate drive must deliver ≥ 10 V with sufficient peak current to charge 38 nC within required switching times.
What is the significance of the 510 mJ single-pulse avalanche energy rating for IRF840ASTRRPBF?
The 510 mJ single-pulse avalanche energy rating quantifies the maximum inductive energy IRF840ASTRRPBF can absorb without failure during unclamped inductive switching events-such as transformer leakage spikes or short-circuit turn-off. This parameter is measured under standardized conditions (TJ = 25 °C, L = 16 mH, IAS = 8.0 A) and validates robustness in hard-switched topologies like two-transistor forward converters. IRF840ASTRRPBF uses this rating to eliminate external snubbers in many flyback and resonant designs.
How does the body diode performance of IRF840ASTRRPBF impact its use in bridge configurations?
The body diode of IRF840ASTRRPBF exhibits 422–633 ns reverse recovery time and 2.0–3.0 μC Qrr, directly influencing shoot-through risk and commutation losses in half-bridge and full-bridge inverters. During dead-time conduction, this diode conducts freewheeling current, and its recovery behavior affects voltage overshoot and EMI generation. IRF840ASTRRPBF's characterized Qrr enables accurate loss modeling and gate timing optimization to minimize overlap conduction-critical for high-efficiency motor drives and UPS systems.
Is IRF840ASTRRPBF compatible with lead-free reflow soldering processes?
Yes, IRF840ASTRRPBF is qualified for lead-free reflow soldering per JEDEC J-STD-020. Its D2PAK package withstands peak temperatures up to 260 °C for 10 seconds, matching standard Pb-free process profiles. The device is marked "PbF" and complies with Vishay's halogen-free and RoHS-compliant material specifications (document 99912). IRF840ASTRRPBF soldering recommendations include controlled ramp rates and avoidance of thermal shock to preserve gate oxide integrity and bond wire reliability.
IRF840ASTRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1018 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF840ASTRRPBF FAQ
1.How can I place an order for IRF840ASTRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF840ASTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF840ASTRRPBF reliable?
The price and inventory of IRF840ASTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840ASTRRPBF is usually 5 days.
3.What payment methods are accepted for IRF840ASTRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840ASTRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF840ASTRRPBF?
IRF840ASTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF840ASTRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF840ASTRRPBF?
For technical support, including IRF840ASTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840ASTRRPBF requirements.
6.How does Aetrix verify that IRF840ASTRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF840ASTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840ASTRRPBF meets industry standards.
7.What is the process for return or replacement of IRF840ASTRRPBF?
All IRF840ASTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840ASTRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF840ASTRRPBF part is unused and in its original packaging.
Return procedure for IRF840ASTRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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