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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840BPBF-BE3

Name: IRF840BPBF-BE3
Brand: Vishay Siliconix
SKU: IRF840BPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF840BPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF840BPBF-BE3.pdf

Description:: MOSFET N-CH 500V 8.7A TO220AB

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Product details

Overview

IRF840BPBF-BE3 from Vishay Siliconix is a 500 V, 8.7 A N-channel power MOSFET in TO-220AB package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 30 nC total gate charge, and 56 mJ single-pulse avalanche energy - used in SMPS primary-side switching, induction heating half-bridges, and industrial motor drive H-bridge legs.

For engineers reviewing the IRF840BPBF-BE3 datasheet, IRF840BPBF-BE3 pinout, IRF840BPBF-BE3 application, or IRF840BPBF-BE3 equivalent, key selection criteria include its 500 V V_DS, 0.85 Ω on-resistance at 10 V drive, 30 nC Q_g, TO-220AB thermal performance (R_thJC = 0.8 °C/W), and avalanche-rated ruggedness for unclamped inductive switching.

Technical Context

This discrete N-channel MOSFET operates as a high-voltage, medium-current switching element in hard-switched topologies. Its design emphasizes low C_iss (527 pF) and optimized FOM (R_DS(on) × Q_g ≈ 25.5 Ω·nC), enabling efficient 50–100 kHz operation in offline converters and resonant inverters.

The device integrates a robust body diode with 308 ns reverse recovery time and 1.8 μC Q_rr, rated for repetitive diode conduction up to 8 A and pulsed current to 32 A - critical for freewheeling paths in bridge configurations where synchronous rectification is not implemented.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage spikes in industrial SMPS.
R_DS(on) max	0.85 Ω at V_GS = 10 V, T_J = 25 °C - determines conduction loss of ≤ 29 W at 8.7 A continuous drain current.
Q_g max	30 nC - defines gate drive power requirement and switching speed in hard-switched circuits with 9.1 Ω gate resistor.
E_AS	56 mJ - enables reliable operation under unclamped inductive switching events without failure.
I_D cont	8.7 A at T_C = 25 °C - sets maximum continuous output current when mounted on heatsink with adequate thermal interface.
R_thJC	0.8 °C/W - allows junction temperature rise of only 125 °C at 156 W dissipation, supporting high-power density layouts.
V_GS(th)	3–5 V - ensures full enhancement with standard 10 V gate drivers while avoiding spurious turn-on near 0 V.

Pinout & Package

Package: TO-220AB, through-hole, single-ended, isolated tab (drain-connected). Standard mounting with insulating washer and thermal compound recommended for heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires ≥10 V for full enhancement and low R_DS(on).
D (Drain)	High-side current path	Connected to high-voltage DC bus or transformer primary; electrically tied to metal tab for thermal conduction.
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; forms source node of N-channel topology.

Key Features

Feature	Design Value
Avalanche energy rating	56 mJ single-pulse - eliminates need for external snubbers in flyback or forward converter primary switches.
Low input capacitance	C_iss = 527 pF - reduces gate drive losses and improves high-frequency switching efficiency above 50 kHz.
Body diode ruggedness	Rated for 32 A pulsed diode current and 11 A peak reverse recovery current - supports bidirectional current in half-bridge freewheeling.
Figure-of-merit	R_DS(on) × Q_g ≈ 25.5 Ω·nC - balances conduction and switching losses for optimal 65–100 kHz SMPS operation.
Thermal resistance	R_thJC = 0.8 °C/W - enables compact heatsink design with ≤ 125 °C ΔT at full 156 W dissipation.

Applications

Server Power Supply	Induction Heating Inverter
Use Scenario: Primary-side switch in 80+ Gold-certified 1 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from 400 V DC bus to transformer primary. Use Value: 500 V rating and 56 mJ E_AS withstand line transients and clamp voltage overshoot during reset cycles.	Use Scenario: Half-bridge leg in 3.3 kW domestic induction cooktop operating at 20–50 kHz resonant frequency. IC Role / Device Role / Timing Role: Medium-current, high-voltage switch driving series-resonant tank with body diode conducting freewheeling current. Use Value: 308 ns t_rr and 1.8 μC Q_rr minimize diode switching loss and prevent cross-conduction during dead-time transitions.
Industrial Motor Drive	Battery Charger Output Stage
Use Scenario: H-bridge upper/lower quadrant switch in 750 W servo amplifier for brushless DC motor control. IC Role / Device Role / Timing Role: Bidirectional current-handling switch enabling four-quadrant torque control with regenerative braking. Use Value: 8 A continuous source-drain diode current and 32 A pulsed I_SM support regenerative energy return without external diodes.	Use Scenario: Secondary-side synchronous rectifier replacement in 600 W EVSE Level 2 onboard charger using LLC resonant topology. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in asymmetrical half-bridge configuration regulating output voltage via duty cycle. Use Value: 0.85 Ω R_DS(on) limits conduction loss to <1.5 W at 4 A load, improving thermal management over lower-voltage alternatives.

Server Power Supply

Induction Heating Inverter

Use Scenario: Primary-side switch in 80+ Gold-certified 1 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from 400 V DC bus to transformer primary.

Use Value: 500 V rating and 56 mJ E_AS withstand line transients and clamp voltage overshoot during reset cycles.

Use Scenario: Half-bridge leg in 3.3 kW domestic induction cooktop operating at 20–50 kHz resonant frequency.

IC Role / Device Role / Timing Role: Medium-current, high-voltage switch driving series-resonant tank with body diode conducting freewheeling current.

Use Value: 308 ns t_rr and 1.8 μC Q_rr minimize diode switching loss and prevent cross-conduction during dead-time transitions.

Industrial Motor Drive

Battery Charger Output Stage

Use Scenario: H-bridge upper/lower quadrant switch in 750 W servo amplifier for brushless DC motor control.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch enabling four-quadrant torque control with regenerative braking.

Use Value: 8 A continuous source-drain diode current and 32 A pulsed I_SM support regenerative energy return without external diodes.

Use Scenario: Secondary-side synchronous rectifier replacement in 600 W EVSE Level 2 onboard charger using LLC resonant topology.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in asymmetrical half-bridge configuration regulating output voltage via duty cycle.

Use Value: 0.85 Ω R_DS(on) limits conduction loss to <1.5 W at 4 A load, improving thermal management over lower-voltage alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 12 nC, TO-220FP package (full-pack)	Lower current rating and higher on-resistance limit use to ≤300 W designs; smaller footprint but higher thermal resistance.	Prefer for space-constrained 200–300 W SMPS where lower gate charge reduces driver complexity.
FQP50N06L	60 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 70 nC, TO-220 package	Not voltage-compatible: insufficient V_DS margin for 400 V bus; suited only for low-voltage (<80 V) motor drives or battery systems.	Select only for 12–48 V DC systems requiring high current and low conduction loss - not a drop-in replacement.

Compared with STP5NK50ZFP and FQP50N06L, the IRF840BPBF-BE3 delivers balanced 500 V capability, 8.7 A current handling, and 30 nC gate charge - making it uniquely suitable for 500–1000 W industrial and server power stages where both voltage margin and thermal performance are critical.

Availability

IRF840BPBF-BE3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial motor drives requiring stable component supply across multi-year production programs.

Supply support for IRF840BPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The D Series power MOSFETs - including IRF840BPBF-BE3 - were engineered for high-efficiency, high-reliability switching in industrial and telecom power conversion, prioritizing avalanche ruggedness, low FOM, and thermal stability.

FAQ

What is the maximum continuous drain current rating for IRF840BPBF-BE3 at 100 °C case temperature?

The IRF840BPBF-BE3 supports 5.5 A continuous drain current at T_C = 100 °C, derated linearly from 8.7 A at 25 °C using the 1.25 W/°C derating factor. This reflects real thermal limits under sustained conduction in enclosed industrial enclosures with limited airflow.

Does IRF840BPBF-BE3 have a fully rated avalanche capability, and what test conditions apply?

Yes, IRF840BPBF-BE3 is specified for 56 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, and I_AS = 7 A. This rating validates safe operation during unclamped inductive switching in flyback and forward converters.

What is the gate-source threshold voltage range for IRF840BPBF-BE3, and how does it affect drive circuit design?

The IRF840BPBF-BE3 has a V_GS(th) range of 3–5 V at T_J = 25 °C. To ensure full enhancement and minimal R_DS(on), gate drive must exceed 10 V - confirming compatibility with standard logic-level and dedicated MOSFET drivers, not 3.3 V microcontrollers alone.

How does the body diode performance of IRF840BPBF-BE3 compare to fast recovery diodes in bridge configurations?

The IRF840BPBF-BE3 body diode exhibits 308 ns reverse recovery time and 1.8 μC Q_rr at I_F = 4 A. While slower than dedicated ultrafast diodes, its ruggedness supports reliable freewheeling in hard-switched half-bridges where synchronous rectification is impractical - a key advantage of the IRF840BPBF-BE3 in cost-sensitive industrial inverters.

Is IRF840BPBF-BE3 RoHS-compliant and halogen-free, and what does the "-BE3" suffix indicate?

Yes, the "-BE3" suffix on IRF840BPBF-BE3 denotes Vishay's lead (Pb)-free and halogen-free construction per JEDEC J-STD-609. It complies with RoHS Directive 2011/65/EU and meets Vishay's material categorization standard for environmentally conscious manufacturing.

IRF840BPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 527 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF840BPBF-BE3 FAQ

1.How can I place an order for IRF840BPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840BPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840BPBF-BE3 reliable?

The price and inventory of IRF840BPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840BPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF840BPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840BPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840BPBF-BE3?

IRF840BPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840BPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840BPBF-BE3?

For technical support, including IRF840BPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840BPBF-BE3 requirements.

6.How does Aetrix verify that IRF840BPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF840BPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840BPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF840BPBF-BE3?

All IRF840BPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF840BPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840BPBF-BE3 part is unused and in its original packaging.

Return procedure for IRF840BPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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