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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840HPBF

Name: IRF840HPBF
Brand: Vishay Siliconix
SKU: IRF840HPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF840HPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF840HPBF.pdf

Description:: POWER MOSFET TO220AB, 850 M @ 10

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF840HPBF from Vishay Siliconix is a 500 V, 7.3 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage switching in SMPS and PFC stages with R_DS(on) = 0.74 Ω at V_GS = 10 V, Q_g = 26 nC (typ), and avalanche-rated E_AS = 175 mJ - deployed in telecom power supplies and HID lighting ballasts.

For engineers reviewing the IRF840HPBF datasheet, IRF840HPBF pinout, IRF840HPBF application, or IRF840HPBF equivalent, key selection criteria include its 500 V V_DS rating, 125 W P_D, 1.0 °C/W R_thJC, low Co(er) = 40 pF, and UIS capability - critical for rugged flyback and resonant converter designs.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon technology with an integral body diode rated for 7.3 A continuous source-drain current and 441 ns typical reverse recovery time (t_rr). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, ensuring reliable turn-on with standard 10 V gate drivers.

The device features low effective output capacitance (Co(er) = 40 pF) and a figure-of-merit R_DS(on) × Q_g of 19.2 Ω·nC (typ), enabling reduced switching losses in hard-switched topologies operating up to 100 kHz. dv/dt immunity is rated at 100 V/ns at T_J = 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports primary-side switching in offline 400 V DC bus applications without derating
R_DS(on) typ @ 10 V	0.74 Ω - enables <7.3 A continuous conduction at T_C = 25 °C with ≤5.4 W conduction loss
Q_g max	39 nC - determines gate drive power requirement; 26 nC typical suits 1–10 Ω gate resistors
E_AS	175 mJ - provides single-pulse unclamped inductive switching robustness per JEDEC JESD24-11
R_thJC max	1.0 °C/W - allows 125 W dissipation with ≤125 °C junction rise above case temperature
t_rr typ	441 ns - defines minimum dead-time requirements in synchronous rectification or half-bridge operation
I_D cont @ 100 °C	4.6 A - sets usable current limit in thermally constrained enclosures without forced air

Pinout & Package

IRF840HPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. The package complies with RoHS and halogen-free requirements per Vishay's material categorization standard.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; input capacitance C_iss = 1059 pF requires low-impedance driver to minimize switching time
D (Drain)	High-side power terminal	Connected to TO-220 tab; electrically tied to drain; must be insulated from heatsink unless system ground-referenced
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge Q_rr = 2.9 μC

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	19.2 Ω·nC (typ) - directly reduces total switching + conduction loss in fixed-frequency converters
Avalanche energy rating (E_AS)	175 mJ - eliminates need for external snubbers in inductive load switching or transformer leakage energy handling
Low effective output capacitance Co(er)	40 pF - minimizes capacitive turn-off loss and improves efficiency in high-dV/dt environments
Enhancement-mode N-channel	V_GS(th) = 2.0–4.0 V - ensures clean turn-on with industry-standard 10 V gate drivers; no risk of spurious conduction
Integral body diode	t_rr = 441 ns, Q_rr = 2.9 μC - supports freewheeling in buck, flyback, and phase-shifted full-bridge topologies

Applications

Server Power Supply	Fluorescent Ballast Lighting
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 500–1000 W to server motherboard rails. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer during each switching cycle; operates at 100–300 kHz. Use Value: 500 V V_DS and 175 mJ E_AS withstand transient overvoltages from transformer leakage; 0.74 Ω R_DS(on) limits conduction loss at 7.3 A peak.	Use Scenario: Half-bridge switching element in electronic fluorescent lamp (EFL) ballasts driving 32–40 W lamps at 20–60 kHz. IC Role / Device Role / Timing Role: Fast-switching power transistor regulating lamp current via frequency modulation; handles repetitive inductive stress. Use Value: 441 ns t_rr and 125 W P_D support reliable zero-voltage switching transitions; TO-220AB enables direct heatsink mounting in compact fixtures.
PV Inverter DC-DC Stage	Industrial Battery Charger
Use Scenario: Isolated DC-DC boost stage in string-level solar inverters stepping up 300–600 V PV input to 800 V DC link. IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology; subjected to high dv/dt and partial-load operation. Use Value: 100 V/ns dv/dt rating and 40 pF Co(er) suppress false triggering and reduce capacitive loss; 150 °C T_J(max) supports outdoor ambient operation.	Use Scenario: Output stage switch in 3 kW industrial battery charger converting 400 V AC to 40–80 V DC for lead-acid or LiFePO₄ packs. IC Role / Device Role / Timing Role: Hard-switched MOSFET in dual-active-bridge or phase-shifted ZVS topology; conducts up to 7.3 A continuously. Use Value: 1.0 °C/W R_thJC enables efficient thermal coupling to chassis; 4.6 A I_D @ 100 °C ensures stable output under sustained load and elevated ambient.

Server Power Supply

Fluorescent Ballast Lighting

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 500–1000 W to server motherboard rails.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer during each switching cycle; operates at 100–300 kHz.

Use Value: 500 V V_DS and 175 mJ E_AS withstand transient overvoltages from transformer leakage; 0.74 Ω R_DS(on) limits conduction loss at 7.3 A peak.

Use Scenario: Half-bridge switching element in electronic fluorescent lamp (EFL) ballasts driving 32–40 W lamps at 20–60 kHz.

IC Role / Device Role / Timing Role: Fast-switching power transistor regulating lamp current via frequency modulation; handles repetitive inductive stress.

Use Value: 441 ns t_rr and 125 W P_D support reliable zero-voltage switching transitions; TO-220AB enables direct heatsink mounting in compact fixtures.

PV Inverter DC-DC Stage

Industrial Battery Charger

Use Scenario: Isolated DC-DC boost stage in string-level solar inverters stepping up 300–600 V PV input to 800 V DC link.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology; subjected to high dv/dt and partial-load operation.

Use Value: 100 V/ns dv/dt rating and 40 pF Co(er) suppress false triggering and reduce capacitive loss; 150 °C T_J(max) supports outdoor ambient operation.

Use Scenario: Output stage switch in 3 kW industrial battery charger converting 400 V AC to 40–80 V DC for lead-acid or LiFePO₄ packs.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in dual-active-bridge or phase-shifted ZVS topology; conducts up to 7.3 A continuously.

Use Value: 1.0 °C/W R_thJC enables efficient thermal coupling to chassis; 4.6 A I_D @ 100 °C ensures stable output under sustained load and elevated ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 12 nC, SuperFET ZVS-optimized	Lower Q_g but higher R_DS(on); better for >200 kHz ZVS, worse for <100 kHz hard-switched conduction loss	Select STP5NK50ZFP when prioritizing switching loss reduction over conduction loss in resonant topologies
FQP5N50C	500 V, 5.0 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-220 non-isolated tab	Non-isolated drain tab requires insulating washer; lower current rating limits use in >300 W designs	Choose FQP5N50C only for cost-sensitive, lower-power (<250 W), non-isolated heatsink applications

Compared with STP5NK50ZFP and FQP5N50C, IRF840HPBF delivers superior conduction efficiency at 7.3 A due to its 0.74 Ω R_DS(on), while maintaining robust UIS capability and a thermally optimized isolated-tab TO-220AB package - making it preferred for medium-power hard-switched SMPS where thermal management and ruggedness are critical.

Availability

IRF840HPBF is available at Aetrix Electronics and suitable for server power supplies, fluorescent ballast lighting, and industrial battery chargers requiring stable component supply across extended production cycles.

Supply support for IRF840HPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The IRF840HPBF belongs to Vishay's high-voltage power MOSFET product line designed for rugged, high-efficiency switching in telecom, industrial, and lighting power conversion systems - emphasizing avalanche robustness and thermal stability.

FAQ

What is the maximum continuous drain current for IRF840HPBF at 100 °C case temperature?

The IRF840HPBF supports 4.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 7.3 A at 25 °C using the 1.0 W/°C factor. Designers must ensure heatsink design maintains case temperature ≤100 °C to sustain this current without exceeding T_J = 150 °C.

Does IRF840HPBF have a fully isolated drain tab in its TO-220AB package?

Yes, the IRF840HPBF uses a TO-220AB package with an electrically isolated drain tab - confirmed by Vishay's package drawings and ordering information. This isolation allows direct mounting to a grounded heatsink without additional insulation, simplifying thermal design in high-voltage applications such as PFC and offline SMPS.

What is the typical reverse recovery charge (Q_rr) of the body diode in IRF840HPBF?

The typical reverse recovery charge (Q_rr) of the integral body diode in IRF840HPBF is 2.9 μC, measured at T_J = 25 °C, I_F = 8 A, di/dt = 100 A/μs, and V_R = 25 V. This parameter directly impacts dead-time selection and switching loss in synchronous or half-bridge configurations where the body diode conducts freewheeling current.

Can IRF840HPBF be used in avalanche mode for circuit protection?

Yes, IRF840HPBF is explicitly rated for single-pulse avalanche energy (E_AS) of 175 mJ under defined test conditions (V_DD = 120 V, L = 14 mH, R_g = 25 Ω, I_AS = 5 A). This rating enables controlled energy absorption during inductive switching transients - a key feature for designing robust, snubberless power stages.

What is the gate-source threshold voltage range for IRF840HPBF?

The gate-source threshold voltage (V_GS(th)) for IRF840HPBF is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures compatibility with standard 10 V gate drivers while preventing unintended turn-on from noise; the typical value is ~3.0 V, supporting reliable enhancement-mode operation.

IRF840HPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1059 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF840HPBF FAQ

1.How can I place an order for IRF840HPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840HPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840HPBF reliable?

The price and inventory of IRF840HPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840HPBF is usually 5 days.

3.What payment methods are accepted for IRF840HPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840HPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840HPBF?

IRF840HPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840HPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840HPBF?

For technical support, including IRF840HPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840HPBF requirements.

6.How does Aetrix verify that IRF840HPBF is sourced from the original manufacturer or authorized distributors?

All IRF840HPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840HPBF meets industry standards.

7.What is the process for return or replacement of IRF840HPBF?

All IRF840HPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840HPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840HPBF part is unused and in its original packaging.

Return procedure for IRF840HPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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