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Vishay Siliconix IRF840LCL
- Part No.:
- IRF840LCL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF840LCL.pdf
- Description:
- MOSFET N-CH 500V 8A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,411
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Product details
Overview
IRF840LCL from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω RDS(on) at VGS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits requiring ruggedness and fast switching.
For engineers reviewing the IRF840LCL datasheet, IRF840LCL pinout, IRF840LCL application, or IRF840LCL equivalent, this page delivers verified electrical parameters, thermal performance data, gate drive requirements, and real-world use context for high-voltage switching design validation and BOM optimization.
Technical Context
This device employs Vishay's LCDMOS (Low Charge Device MOSFET) technology to achieve ultra-low gate charge (Qg = 39 nC max), reduced Ciss (1100 pF typ), Coss (170 pF typ), and Crss (18 pF typ), enabling MHz-range operation at high current. Its ±30 V VGS rating supports robust gate drive margin.
The IRF840LCL integrates a fast-recovery body diode (trr = 490–740 ns, Qrr = 3.0–4.5 µC) and is rated for unclamped inductive switching with EAS = 510 mJ (single-pulse) and IAR = 8.0 A (repetitive avalanche), supporting reliable operation in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports primary-side switching in offline SMPS up to 400 V DC bus with safety margin. |
| RDS(on) | 0.85 Ω @ VGS = 10 V - Enables low conduction loss at 4.8 A continuous drain current (TC = 25 °C). |
| Qg | 39 nC max - Reduces gate driver power requirement and enables efficient high-frequency (>500 kHz) operation. |
| tr/tf | 25 ns / 19 ns - Supports fast edge rates for minimized switching transition losses in resonant and hard-switched converters. |
| RthJC | 1.0 °C/W - Allows 125 W power dissipation at TC = 25 °C, simplifying heatsink selection for medium-power applications. |
| EAS | 510 mJ - Withstands single-pulse inductive energy without failure, critical for flyback and forward converter snubberless designs. |
| VGS(th) | 2.0–4.0 V - Ensures clean turn-on with standard 5 V or 10 V logic-level gate drivers. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current, high-voltage PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives voltage-controlled signal to modulate channel conductivity; requires <39 nC charge for full enhancement. |
| D (Drain) | High-voltage power output | Connected to exposed thermal pad; carries switched 500 V load current and dissipates heat directly to PCB copper. |
| S (Source) | Reference node / return path | Common reference for gate drive and current sensing; forms source terminal of internal body diode (anode). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge (Qg = 39 nC) | Reduces gate driver IC stress and enables use of smaller, lower-cost drivers in high-frequency SMPS. |
| Enhanced ±30 V VGS rating | Prevents gate oxide damage during transient overvoltage events and improves long-term reliability under noisy gate drive conditions. |
| Repetitive avalanche rated (IAR = 8.0 A) | Eliminates need for external clamping in inductive load switching, reducing component count and board space. |
| Low Ciss/Coss/Crss | Minimizes capacitive switching losses and improves efficiency in ZVS/ZCS topologies operating above 300 kHz. |
| Fast body diode recovery (trr = 490–740 ns) | Reduces reverse recovery losses and EMI generation in synchronous rectification and half-bridge configurations. |
Applications
| AC-DC Power Supplies | DC-DC Converters |
|---|---|
|
Use Scenario: Primary-side switching in 60–150 W offline flyback and forward converters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to isolated output. Use Value: 500 V VDS and 510 mJ EAS enable direct replacement of legacy 500 V MOSFETs without snubber redesign. |
Use Scenario: High-side switch in non-isolated buck and boost converters for industrial sensors and PLC modules. IC Role / Device Role / Timing Role: Main power transistor regulating output voltage via PWM duty cycle control. Use Value: 0.85 Ω RDS(on) and 39 nC Qg support >92% efficiency at 100 kHz switching with minimal gate drive overhead. |
| Motor Drive Circuits | Lighting Ballasts |
|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for HVAC actuators and power tools. IC Role / Device Role / Timing Role: Low-side or high-side switching element commutating phase current in trapezoidal control. Use Value: Repetitive avalanche rating and fast body diode allow safe freewheeling without external diodes in compact layouts. |
Use Scenario: Resonant switch in electronic CFL and LED driver ballasts operating at 30–70 kHz. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) transistor in series-resonant tank circuit. Use Value: Ultra-low Coss (170 pF) and Crss (18 pF) minimize dead-time losses and improve ZVS soft-switching window. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF840LCSPbF | D2PAK package, leaded termination (Pb-containing); identical electrical specs and thermal performance. | No RoHS compliance; suitable only for legacy industrial systems where Pb exemption applies. | Select when legacy qualification or Pb-based solder compatibility is required; otherwise prefer IRF840LCL for RoHS-compliant production. |
| SiHF840LCL-GE3 | D2PAK package, lead (Pb)-free and halogen-free; same VDS, RDS(on), Qg, and avalanche ratings. | Qualified to JEDEC JESD22-A110 reliability standards; preferred for automotive and medical-grade designs. | Choose SiHF840LCL-GE3 for new designs requiring full environmental compliance and extended reliability validation. |
Compared with IRF840LCL, IRF840LCSPbF offers identical performance but lacks RoHS compliance, while SiHF840LCL-GE3 provides equivalent electrical behavior with enhanced material qualifications-making it the preferred drop-in alternative for next-generation certified designs.
Availability
IRF840LCL is available at Aetrix Electronics and suitable for AC-DC power supplies, motor drive circuits, and lighting ballasts requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.
Supply support for IRF840LCL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRF840LCL belongs to Vishay's LCDMOS low-charge power MOSFET family, engineered specifically for high-frequency, high-efficiency switching applications in industrial power conversion and motor control.
FAQ
What is the maximum continuous drain current for IRF840LCL at 100 °C case temperature?
The IRF840LCL supports 5.1 A continuous drain current at TC = 100 °C, derived from its 125 W maximum power dissipation and 1.0 °C/W junction-to-case thermal resistance. This rating ensures stable operation in thermally constrained environments such as enclosed power supplies or densely packed motor drives, provided adequate PCB copper area is used for heatsinking.
Does IRF840LCL have avalanche capability, and how is it specified?
Yes, the IRF840LCL is repetitively avalanche rated with IAR = 8.0 A and EAR = 13 mJ per pulse, and single-pulse EAS = 510 mJ. These values are measured under standardized test conditions (L = 14 mH, Rg = 25 Ω, starting TJ = 25 °C) and confirm its ability to safely absorb inductive energy without failure in flyback, forward, and relay-driving applications.
What is the gate threshold voltage range for IRF840LCL, and why does it matter?
The IRF840LCL has a VGS(th) range of 2.0–4.0 V at ID = 250 µA. This ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs and eliminates risk of partial enhancement at marginal gate voltages-critical for preventing shoot-through in half-bridge configurations and ensuring consistent switching timing across temperature and unit variance.
How does the body diode performance of IRF840LCL compare to standard MOSFETs?
The IRF840LCL features a fast-recovery body diode with trr = 490–740 ns and Qrr = 3.0–4.5 µC at TJ = 25 °C, significantly faster than conventional 500 V MOSFETs. This reduces reverse recovery losses and associated EMI in synchronous rectification, freewheeling, and LLC resonant converters-enabling higher efficiency and simpler EMI filtering.
Is IRF840LCL compatible with standard D2PAK footprint and reflow profiles?
Yes, the IRF840LCL uses the industry-standard TO-263AB (D2PAK) outline per JEDEC, with documented pad dimensions (e.g., 0.420" × 0.355" recommended copper area). It is qualified for standard lead-free reflow profiles (peak 260 °C, 10 s), and its thermal pad design supports both manual and automated assembly with verified solder joint integrity per IPC-A-610 Class 2/3 requirements.
IRF840LCL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
IRF840LCL FAQ
1.How can I place an order for IRF840LCL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF840LCL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF840LCL reliable?
The price and inventory of IRF840LCL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840LCL is usually 5 days.
3.What payment methods are accepted for IRF840LCL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840LCL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF840LCL?
IRF840LCL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF840LCL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF840LCL?
For technical support, including IRF840LCL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840LCL requirements.
6.How does Aetrix verify that IRF840LCL is sourced from the original manufacturer or authorized distributors?
All IRF840LCL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840LCL meets industry standards.
7.What is the process for return or replacement of IRF840LCL?
All IRF840LCL units undergo pre-shipment inspection (PSI). If there is an issue with IRF840LCL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF840LCL part is unused and in its original packaging.
Return procedure for IRF840LCL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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