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Vishay Siliconix IRF840LCLPBF

Part No.:
IRF840LCLPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRF840LCLPBF.pdf
Description:
MOSFET N-CH 500V 8A I2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,965

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Product details

Overview

IRF840LCLPBF from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω RDS(on) at VGS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits.

For engineers reviewing the IRF840LCLPBF datasheet, IRF840LCLPBF pinout, IRF840LCLPBF application, or IRF840LCLPBF equivalent, this part delivers ultra-low gate charge, enhanced ±30 V gate rating, reduced Ciss/Coss/Crss, and proven ruggedness for stable operation up to 150 °C junction temperature in hard-switched topologies.

Technical Context

This device employs Vishay's LCDMOS (Low Charge Device MOSFET) technology to achieve significantly lower gate charge versus conventional power MOSFETs without added cost. Its 39 nC Qg, 10 nC Qgs, and 19 nC Qgd enable reduced gate drive requirements and faster switching with minimal losses.

The IRF840LCLPBF supports high-frequency operation up to several MHz at high current, with 3.5 V/ns peak diode recovery dV/dt capability and 510 mJ single-pulse avalanche energy-enabling robust unclamped inductive switching in flyback, resonant, and half-bridge configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VDS500 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin
RDS(on)0.85 Ω @ VGS = 10 V - limits conduction loss to ≤3.3 W at 8 A continuous drain current
Qg39 nC - enables efficient gate driving with standard 1–2 A peak drivers at ≥500 kHz
ID (continuous)8.0 A @ TC = 25 °C - suitable for medium-power converters up to ~1 kW with heatsinking
EAS510 mJ - sustains unclamped inductive energy in flyback snubberless designs
TJ range−55 to +150 °C - qualified for industrial and automotive under-hood ambient conditions
RthJC1.0 °C/W - allows direct thermal coupling to heatsink for high-power density layouts

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for low thermal resistance and high-current handling. Three terminals: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to the internal MOSFET drain and serves as primary thermal path.

Pin/TerminalCircuit RoleDesign Meaning
GGate control inputAccepts 10 V logic-level drive; ±30 V rating prevents gate oxide damage during transients
DDrain current outputHigh-voltage terminal tied to PCB thermal pad; carries full load current and dissipates heat directly
SSource reference nodeCommon return for gate drive and load current; defines local ground reference for driver IC placement

Key Features

FeatureDesign Value
Ultra-low gate charge39 nC total charge reduces driver power loss and enables >1 MHz switching in optimized layouts
Enhanced VGS rating±30 V gate-source voltage withstand improves immunity to gate ringing and ESD events
Reduced capacitanceCiss = 1100 pF, Coss = 170 pF, Crss = 18 pF - lowers Miller effect and improves dv/dt immunity
Repetitive avalanche rated13 mJ per pulse - supports reliable operation in inductive load switching without external clamping
High-frequency optimizedTurn-on delay 12 ns, rise time 25 ns, turn-off delay 27 ns - minimizes dead-time losses in synchronous topologies

Applications

Switch-Mode Power SupplyFlyback Converter

Use Scenario: Primary-side switching in universal-input AC/DC adapters and telecom rectifiers.

IC Role / Device Role / Timing Role: High-voltage N-channel switch controlling energy transfer into transformer primary winding.

Use Value: 500 V VDS and 510 mJ EAS allow safe operation across 85–265 V AC inputs with margin for line surges.

Use Scenario: Isolated DC-DC conversion in industrial PLC I/O modules and medical auxiliary supplies.

IC Role / Device Role / Timing Role: Main power switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: Low Qg and fast switching reduce switching losses at 100–500 kHz, improving efficiency by ≥1.2% over legacy MOSFETs.

Motor Drive InverterDC-DC Boost Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for HVAC blowers and power tools.

IC Role / Device Role / Timing Role: Low-side or high-side switching element managing PWM-controlled phase current.

Use Value: 8.0 A continuous current and 150 °C TJ rating support sustained torque delivery without derating in compact enclosures.

Use Scenario: Input-stage boost switch in solar microinverters and battery management system pre-regulators.

IC Role / Device Role / Timing Role: High-efficiency step-up switch operating at 200–400 kHz with high duty cycle.

Use Value: 0.85 Ω RDS(on) and low Coss minimize conduction and capacitive losses, enabling ≥95% peak efficiency at 5 A output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP8NK50ZFP500 V, 7.5 A, RDS(on) = 0.95 Ω, Qg = 42 nC, TO-220FP packageHigher RDS(on) and larger package footprint; lower thermal performance (RthJC = 1.5 °C/W)Prefer when through-hole mounting or lower-cost qualification is required; not drop-in due to different package and pinout
IXTH8N50L2500 V, 8.0 A, RDS(on) = 0.80 Ω, Qg = 32 nC, TO-247 packageLower Qg and slightly better RDS(on), but requires through-hole assembly and larger board areaChoose for highest efficiency in space-unconstrained designs; incompatible pinout and thermal interface vs. IRF840LCLPBF

Compared with STP8NK50ZFP and IXTH8N50L2, the IRF840LCLPBF offers optimal balance of surface-mount compatibility, thermal performance (1.0 °C/W RthJC), and ruggedness for high-reliability industrial power stages-without requiring PCB redesign or driver requalification.

Availability

IRF840LCLPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drives, and DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF840LCLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF840LCLPBF belongs to Vishay's LCDMOS low-charge power MOSFET family, engineered specifically for high-frequency, high-efficiency switching applications where gate drive simplicity and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for IRF840LCLPBF at 100 °C case temperature?

The IRF840LCLPBF has a maximum continuous drain current (ID) of 5.1 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be applied when heatsink design or ambient conditions prevent maintaining TC ≤ 25 °C. The IRF840LCLPBF remains fully functional within its 150 °C maximum junction temperature limit at this current level.

Does IRF840LCLPBF support logic-level gate drive?

No, the IRF840LCLPBF is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, and it is characterized for RDS(on) at VGS = 10 V. While it may turn on partially with 5 V drive, full enhancement and guaranteed 0.85 Ω on-resistance require ≥10 V gate-source voltage. For true logic-level operation, consider Vishay's SiHF840LCL-GE3 variant or dedicated logic-level alternatives.

What is the avalanche energy rating of IRF840LCLPBF, and how is it tested?

The IRF840LCLPBF is rated for 510 mJ single-pulse avalanche energy (EAS) and 13 mJ repetitive avalanche energy (EAR). EAS is measured under standardized unclamped inductive test conditions: L = 14 mH, Rg = 25 Ω, IAS = 8.0 A, starting TJ = 25 °C. This rating confirms the device's ability to absorb inductive energy without failure during transient overloads-a key reliability metric for flyback and motor drive applications using the IRF840LCLPBF.

Can IRF840LCLPBF be used in parallel configurations?

Yes, the IRF840LCLPBF can be paralleled for higher current handling, provided layout symmetry, gate drive matching, and thermal coupling are carefully controlled. Its positive RDS(on) temperature coefficient promotes current sharing above 25 °C, but individual gate resistors (≥10 Ω) and Kelvin source connections are recommended to suppress oscillation. Derating total current by ≥20% is advised for reliability. The IRF840LCLPBF's consistent parametric spread across production lots supports predictable parallel behavior.

What is the thermal resistance from junction to case (RthJC) for IRF840LCLPBF, and how does it impact heatsink selection?

The IRF840LCLPBF has a maximum junction-to-case thermal resistance (RthJC) of 1.0 °C/W, measured from die junction to the D2PAK drain tab. This low value enables efficient heat transfer to an external heatsink when the drain pad is soldered to a large copper area or mounted to a heatsink via thermal interface material. For a 125 W maximum power dissipation at TC = 25 °C, a heatsink with RthSA ≤ 0.5 °C/W is required to maintain TJ ≤ 150 °C-making the IRF840LCLPBF suitable for compact, high-power-density designs.

IRF840LCLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK

IRF840LCLPBF FAQ

1.How can I place an order for IRF840LCLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840LCLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840LCLPBF reliable?

The price and inventory of IRF840LCLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840LCLPBF is usually 5 days.

3.What payment methods are accepted for IRF840LCLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840LCLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840LCLPBF?

IRF840LCLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840LCLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840LCLPBF?

For technical support, including IRF840LCLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840LCLPBF requirements.

6.How does Aetrix verify that IRF840LCLPBF is sourced from the original manufacturer or authorized distributors?

All IRF840LCLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840LCLPBF meets industry standards.

7.What is the process for return or replacement of IRF840LCLPBF?

All IRF840LCLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840LCLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840LCLPBF part is unused and in its original packaging.

Return procedure for IRF840LCLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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