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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840LCPBF-BE3

Name: IRF840LCPBF-BE3
Brand: Vishay Siliconix
SKU: IRF840LCPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF840LCPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF840LCPBF-BE3.pdf

Description:: MOSFET N-CHANNEL 500V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF840LCPBF-BE3 from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in TO-220AB package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits.

For engineers reviewing the IRF840LCPBF-BE3 datasheet, IRF840LCPBF-BE3 pinout, IRF840LCPBF-BE3 application, or IRF840LCPBF-BE3 equivalent, key selection criteria include its 500 V blocking voltage, ±30 V gate rating, low C_iss/C_oss, 1.0 °C/W junction-to-case thermal resistance, and RoHS-compliant/halogen-free construction per ordering code BE3.

Technical Context

This device employs Vishay's LCDMOS technology to achieve ultra-low gate charge (39 nC max) and reduced switching losses while maintaining ruggedness and 500 V V_DS capability. Its dynamic parameters-including 1100 pF C_iss, 170 pF C_oss, and 18 pF Crss-support MHz-range operation with controlled dV/dt (3.5 V/ns peak diode recovery).

The IRF840LCPBF-BE3 integrates a robust body diode with 490–740 ns reverse recovery time (t_rr) and 3.0–4.5 μC Q_rr, enabling reliable unclamped inductive switching up to 510 mJ single-pulse avalanche energy and 8.0 A repetitive avalanche current under defined conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin
R_DS(on)	0.85 Ω @ V_GS = 10 V - enables ≤ 33 W conduction loss at 8 A continuous drain current
Q_g	39 nC max - reduces gate driver power demand and enables efficient 100+ kHz operation
t_r/t_f	25 ns / 19 ns - supports fast edge rates in hard-switched topologies with low EMI risk
R_thJC	1.0 °C/W - allows 125 W dissipation with ≤125 °C case temperature rise above ambient
E_AS	510 mJ - sustains unclamped inductive turn-off events in relay drivers or solenoid controls
V_GS	±30 V - accommodates gate drive overshoot and noise without oxide stress or failure

Pinout & Package

IRF840LCPBF-BE3 is housed in a through-hole TO-220AB package with standard lead spacing and mounting hole for heatsink attachment. The package provides 1.0 °C/W junction-to-case thermal resistance and is rated for 10 lbf·in (1.1 N·m) mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; ±30 V absolute max rating prevents gate oxide damage
D (Drain)	High-voltage power output	Connected to 500 V DC bus; electrically tied to metal tab for thermal conduction
S (Source)	Power return/reference	Common node for gate drive return and current sensing; forms body diode anode

Key Features

Feature	Design Value
Ultra-low gate charge (39 nC)	Reduces gate driver IC power consumption and enables use of smaller, lower-cost drivers
Enhanced 30 V V_GS rating	Eliminates need for external gate clamping in noisy industrial environments
Reduced C_iss, C_oss, C_rss	Minimizes Miller effect and improves controllability during high-dV/dt transitions
Repetitive avalanche rated	Supports reliable operation in inductive load switching without snubber networks
Lead (Pb)-free and halogen-free (BE3)	Meets IPC/JEDEC J-STD-609 Category 1 and IEC 61249-2-21 requirements

Applications

Switch-Mode Power Supply	DC-DC Converter
Use Scenario: Primary-side switching in 50–200 W offline flyback or forward converters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding. Use Value: 500 V V_DS and 0.85 Ω R_DS(on) enable >85% efficiency at 100 kHz with minimal heatsinking.	Use Scenario: High-side switch in isolated 12 V–48 V input, 3.3/5/12 V output DC-DC modules. IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in half-bridge topology. Use Value: 39 nC Q_g and fast t_r/t_f reduce switching losses at 300–500 kHz operation.
Motor Drive	Industrial Relay/Solenoid Control
Use Scenario: Low-side driver for 24–48 V brushed DC motors in automation equipment. IC Role / Device Role / Timing Role: PWM-controlled current path for motor winding commutation. Use Value: Repetitive avalanche rating handles back-EMF spikes up to 8.0 A without external protection.	Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC actuators or valves. IC Role / Device Role / Timing Role: Unclamped inductive load switch with integrated body diode freewheeling. Use Value: 510 mJ E_AS withstands turn-off energy from 14 mH coils at 8 A, eliminating snubber design.

Switch-Mode Power Supply

DC-DC Converter

Use Scenario: Primary-side switching in 50–200 W offline flyback or forward converters.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding.

Use Value: 500 V V_DS and 0.85 Ω R_DS(on) enable >85% efficiency at 100 kHz with minimal heatsinking.

Use Scenario: High-side switch in isolated 12 V–48 V input, 3.3/5/12 V output DC-DC modules.

IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in half-bridge topology.

Use Value: 39 nC Q_g and fast t_r/t_f reduce switching losses at 300–500 kHz operation.

Motor Drive

Industrial Relay/Solenoid Control

Use Scenario: Low-side driver for 24–48 V brushed DC motors in automation equipment.

IC Role / Device Role / Timing Role: PWM-controlled current path for motor winding commutation.

Use Value: Repetitive avalanche rating handles back-EMF spikes up to 8.0 A without external protection.

Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC actuators or valves.

IC Role / Device Role / Timing Role: Unclamped inductive load switch with integrated body diode freewheeling.

Use Value: 510 mJ E_AS withstands turn-off energy from 14 mH coils at 8 A, eliminating snubber design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NA50	500 V, 5 A, R_DS(on) = 1.2 Ω, Q_g = 32 nC, TO-220	Lower current rating and higher on-resistance limit continuous power handling	Preferred where lower gate charge is critical but 5 A ID suffices and cost sensitivity outweighs thermal margin
FQP50N06L	60 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 72 nC, TO-220	Lower voltage rating precludes use in 400 V DC bus applications	Only suitable for low-voltage (<100 V) high-current motor drives where IRF840LCPBF-BE3's 500 V rating is unnecessary

Compared with STP5NA50 and FQP50N06L, the IRF840LCPBF-BE3 uniquely balances 500 V capability, 8 A current, and 39 nC gate charge in a thermally efficient TO-220AB package-making it optimal for universal-input SMPS and industrial inductive switching where voltage margin and avalanche robustness are non-negotiable.

Availability

IRF840LCPBF-BE3 is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, motor drives, and industrial relay control requiring stable component supply and long-term lifecycle support.

Supply support for IRF840LCPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The IRF840LCPBF-BE3 belongs to Vishay's LCDMOS low-charge power MOSFET family, engineered specifically for high-frequency switching applications demanding reduced gate drive loss, low switching energy, and proven avalanche survivability.

FAQ

What is the maximum continuous drain current for IRF840LCPBF-BE3 at 100 °C case temperature?

The IRF840LCPBF-BE3 supports 5.1 A continuous drain current at T_C = 100 °C, derating linearly from 8.0 A at 25 °C using the specified 1.0 W/°C derating factor. This value reflects thermal limits under sustained conduction, not transient pulse capability. Designers must verify heatsink interface resistance and ambient airflow to maintain safe junction temperatures below 150 °C in actual IRF840LCPBF-BE3 deployments.

Does IRF840LCPBF-BE3 have a built-in body diode, and what are its key parameters?

Yes, the IRF840LCPBF-BE3 integrates a body diode with 8.0 A continuous source-drain current rating, 2.0 V forward voltage at 8.0 A and 25 °C, and 490–740 ns reverse recovery time (t_rr). Its Q_rr is 3.0–4.5 μC, supporting freewheeling in inductive circuits. These values are measured under standardized conditions (T_J = 25 °C, I_F = 8.0 A, dI/dt = 100 A/μs), and performance degrades at elevated temperature-critical for IRF840LCPBF-BE3 designs operating near thermal limits.

What is the gate threshold voltage range for IRF840LCPBF-BE3, and how does it affect drive circuit design?

The IRF840LCPBF-BE3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This means full enhancement requires ≥10 V gate drive to ensure R_DS(on) remains at 0.85 Ω. Drive circuits must supply clean, well-regulated 10–15 V with sufficient current to charge 39 nC gate capacitance rapidly-especially important given the IRF840LCPBF-BE3's 25 ns rise time. Undervoltage drive risks partial turn-on and excessive conduction loss.

Is IRF840LCPBF-BE3 suitable for avalanche operation, and what are the limits?

Yes, the IRF840LCPBF-BE3 is explicitly rated for repetitive avalanche operation with I_AR = 8.0 A and E_AR = 13 mJ per pulse, and single-pulse E_AS = 510 mJ. These ratings assume strict adherence to test conditions: V_DD = 50 V, L = 14 mH, R_g = 25 Ω, and starting T_J ≤ 25 °C. Real-world IRF840LCPBF-BE3 avalanche use demands careful thermal management and pulse-width limitation to avoid cumulative junction heating beyond 150 °C.

How does the TO-220AB package of IRF840LCPBF-BE3 impact thermal design?

The TO-220AB package delivers 1.0 °C/W junction-to-case thermal resistance, enabling 125 W power dissipation with only 125 °C temperature rise from case to junction. However, effective heatsinking is mandatory: the metal tab is electrically connected to the drain, so isolation hardware (e.g., silicone pads, shoulder washers) is required when mounting to grounded heatsinks. Mounting torque must be 10 lbf·in (1.1 N·m) to ensure consistent thermal contact-underspecified torque increases R_thCS and risks IRF840LCPBF-BE3 thermal runaway.

IRF840LCPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF840LCPBF-BE3 FAQ

1.How can I place an order for IRF840LCPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840LCPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840LCPBF-BE3 reliable?

The price and inventory of IRF840LCPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840LCPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF840LCPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840LCPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840LCPBF-BE3?

IRF840LCPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840LCPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840LCPBF-BE3?

For technical support, including IRF840LCPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840LCPBF-BE3 requirements.

6.How does Aetrix verify that IRF840LCPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF840LCPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840LCPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF840LCPBF-BE3?

All IRF840LCPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF840LCPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840LCPBF-BE3 part is unused and in its original packaging.

Return procedure for IRF840LCPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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