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Vishay Siliconix IRF840LCSPBF
- Part No.:
- IRF840LCSPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF840LCSPBF.pdf
- Description:
- MOSFET N-CH 500V 8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,658
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Product details
Overview
IRF840LCSPBF from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω RDS(on) at VGS = 10 V, 39 nC total gate charge, and ±30 V gate-source voltage rating. It delivers ultra-low gate charge and reduced Ciss/Coss/Crss, enabling high-frequency switching up to several MHz in hard-switched SMPS and resonant converters.
For engineers reviewing the IRF840LCSPBF datasheet, IRF840LCSPBF pinout, IRF840LCSPBF application, or IRF840LCSPBF equivalent, this device is selected for high-voltage DC-DC conversion, offline flyback/forward topologies, and repetitive avalanche-tolerant snubberless designs requiring rugged 500 V blocking and fast diode recovery (trr = 490–740 ns).
Technical Context
This MOSFET employs Vishay's LCDMOS (Low Charge Device MOSFET) technology to achieve significantly lower gate charge versus conventional high-voltage MOSFETs without added cost. Its design targets reduced gate drive requirements and minimized switching losses in high-frequency power stages.
The device integrates a robust body diode rated for 8.0 A continuous source-drain current and 28 A pulsed current, with peak diode recovery dV/dt capability of 3.5 V/ns and repetitive avalanche energy of 13 mJ. Thermal resistance RthJC is 1.0 °C/W, supporting high-power dissipation in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Enables use in 400 V DC bus systems with margin for transient overvoltage. |
| RDS(on) | 0.85 Ω @ VGS = 10 V - Limits conduction loss to ≤6.9 W at 8.0 A, critical for thermal management. |
| Qg | 39 nC - Reduces gate driver power demand and enables operation at >500 kHz with standard drivers. |
| trr | 490–740 ns - Supports zero-voltage switching (ZVS) in resonant topologies and reduces EMI. |
| EAS | 510 mJ - Allows unclamped inductive switching without external snubbers in flyback or LLC designs. |
| RthJC | 1.0 °C/W - Permits 125 W power dissipation with ≤125 °C junction rise above case, simplifying heatsink sizing. |
| VGS(th) | 2.0–4.0 V - Ensures reliable turn-on with standard 10 V gate drivers while avoiding spurious conduction. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current, high-voltage PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 10 V logic-level drive; low Qgs (10 nC) and Qgd (19 nC) minimize Miller effect and improve switching stability. |
| D (Drain) | High-side power output | Connected to exposed thermal pad; rated for 500 V blocking and 28 A pulsed current; serves as primary heat path to PCB. |
| S (Source) | Reference and return path | Common node for gate drive reference and load return; low-inductance layout essential for dV/dt immunity and diode recovery control. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | 39 nC total charge enables efficient high-frequency operation (>500 kHz) with minimal gate driver stress. |
| Enhanced 30 V VGS rating | ±30 V absolute maximum gate-source voltage improves robustness against gate transients in noisy power environments. |
| Reduced Ciss/Coss/Crss | 1100 pF / 170 pF / 18 pF values suppress ringing and simplify EMI filter design in high-dV/dt applications. |
| Repetitive avalanche rated | 13 mJ repetitive avalanche energy allows reliable operation under inductive fault conditions without derating. |
| High-frequency optimized | Turn-on/off delays (12 ns / 27 ns) and rise/fall times (25 ns / 19 ns) support MHz-class switching in resonant converters. |
Applications
| Offline AC-DC Adapters | Industrial DC-DC Converters |
|---|---|
Use Scenario: 65–100 W universal-input flyback converter for industrial instrumentation power supplies. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC link, operating at 65–130 kHz with valley switching. Use Value: Low Qg and fast trr reduce switching losses by ~18% vs. legacy 500 V MOSFETs, improving efficiency at full load. |
Use Scenario: 200 W isolated forward converter powering PLC I/O modules in factory automation. IC Role / Device Role / Timing Role: Main power switch in synchronous rectified forward topology, driven by transformer-coupled gate signal. Use Value: 500 V VDS and 13 mJ EAR ensure reliability during bus transients; RthJC = 1.0 °C/W enables compact heatsink integration. |
| Resonant LLC Power Supplies | Snubberless Motor Drive Stages |
Use Scenario: 300 W server PSU using half-bridge LLC resonant converter with ZVS operation. IC Role / Device Role / Timing Role: High-side leg switch in resonant tank interface; leverages low Coss and fast diode recovery for soft switching. Use Value: 170 pF Coss and 490 ns trr enable stable ZVS across 20–300 kHz range, reducing EMI and conduction loss. |
Use Scenario: 1 kW brushless DC motor inverter stage for HVAC compressors with integrated freewheeling. IC Role / Device Role / Timing Role: Upper-leg switching device in 3-phase inverter bridge; body diode conducts reverse recovery during PWM commutation. Use Value: Repetitive avalanche rating and 3.5 V/ns dV/dt tolerance prevent failure during inductive kickback without external clamps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.4 Ω, Qg = 22 nC, TO-220FP package | Lower current rating and higher RDS(on); lacks repetitive avalanche rating | Preferred where space-constrained TO-220FP mounting is required and peak current ≤4.5 A. |
| IXTH8N50L2 | 500 V, 8.0 A, RDS(on) = 0.95 Ω, Qg = 32 nC, TO-247 package | Higher RDS(on), lower Qg, larger TO-247 footprint, no specified dV/dt rating | Selected when higher surge current margin is needed and board area permits TO-247 mechanical layout. |
Compared with STP5NK50ZFP and IXTH8N50L2, the IRF840LCSPBF offers superior gate charge efficiency (39 nC), proven repetitive avalanche capability (13 mJ), and D2PAK thermal performance (RthJC = 1.0 °C/W), making it optimal for high-density, high-reliability 500 V switching where board space and thermal headroom are constrained.
Availability
IRF840LCSPBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and resonant LLC power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for IRF840LCSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRF840LCSPBF belongs to Vishay's LCDMOS family-engineered specifically for high-frequency, high-voltage switching power supplies where low gate charge, fast body diode recovery, and avalanche ruggedness are mandatory.
FAQ
What is the maximum continuous drain current for IRF840LCSPBF at 100 °C case temperature?
The IRF840LCSPBF supports 5.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within its 125 W maximum power dissipation envelope when properly heatsinked.
Does IRF840LCSPBF have a qualified repetitive avalanche rating?
Yes, the IRF840LCSPBF is explicitly rated for repetitive avalanche energy of 13 mJ under defined test conditions (TJ ≤ 150 °C, pulse width limited by junction temperature). This rating is documented in the Absolute Maximum Ratings table and validated per Vishay's avalanche test methodology.
What is the typical body diode reverse recovery time (trr) for IRF840LCSPBF?
The IRF840LCSPBF exhibits a typical body diode reverse recovery time of 490 ns, with a maximum of 740 ns, measured at TJ = 25 °C, IF = 8.0 A, and dI/dt = 100 A/μs. This value is confirmed in the Specifications table and supports high-frequency ZVS operation.
Is IRF840LCSPBF compatible with standard 10 V gate drivers?
Yes, the IRF840LCSPBF is fully compatible with standard 10 V gate drivers. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, and RDS(on) is fully specified at VGS = 10 V, ensuring robust enhancement-mode operation without requiring specialized level-shifting circuitry.
What package type does IRF840LCSPBF use, and how is thermal management implemented?
The IRF840LCSPBF uses the D2PAK (TO-263) surface-mount package with an exposed drain pad that serves as both the primary electrical connection and thermal path. Thermal management relies on soldering the drain pad to a large copper area on the PCB, achieving RthJC = 1.0 °C/W and enabling 125 W power dissipation with proper layout.
IRF840LCSPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF840LCSPBF FAQ
1.How can I place an order for IRF840LCSPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF840LCSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF840LCSPBF reliable?
The price and inventory of IRF840LCSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840LCSPBF is usually 5 days.
3.What payment methods are accepted for IRF840LCSPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840LCSPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF840LCSPBF?
IRF840LCSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF840LCSPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF840LCSPBF?
For technical support, including IRF840LCSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840LCSPBF requirements.
6.How does Aetrix verify that IRF840LCSPBF is sourced from the original manufacturer or authorized distributors?
All IRF840LCSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840LCSPBF meets industry standards.
7.What is the process for return or replacement of IRF840LCSPBF?
All IRF840LCSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840LCSPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF840LCSPBF part is unused and in its original packaging.
Return procedure for IRF840LCSPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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