My Inquiry
My Account
Vishay Siliconix IRF840LCSTRR
- Part No.:
- IRF840LCSTRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF840LCSTRR.pdf
- Description:
- MOSFET N-CH 500V 8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,913
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF840LCSTRR from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω RDS(on) at VGS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits requiring robust unclamped inductive switching capability.
For engineers reviewing the IRF840LCSTRR datasheet, IRF840LCSTRR pinout, IRF840LCSTRR application, or IRF840LCSTRR equivalent, this device delivers verified ultra-low gate charge, enhanced ±30 V gate drive tolerance, reduced Ciss/Coss/Crss, and 510 mJ single-pulse avalanche energy-critical for designing reliable high-efficiency SMPS and industrial power stages.
Technical Context
This MOSFET employs Vishay's LCDMOS (Low Charge Device MOSFET) technology to achieve significantly lower gate charge versus conventional devices without added cost. It supports extremely high-frequency operation up to several MHz at high current, enabled by minimized input/output/reverse transfer capacitances (1100 pF / 170 pF / 18 pF).
The device is rated for repetitive avalanche (13 mJ), features a rugged body diode with 490–740 ns reverse recovery time and 3.0–4.5 μC Qrr, and maintains stable RDS(on) over temperature with a +0.63 V/°C VDS temperature coefficient-enabling predictable thermal performance in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports primary-side switching in offline AC-DC converters up to 400 V DC bus. |
| RDS(on) max | 0.85 Ω at VGS = 10 V - Enables low conduction loss in 8 A continuous drain applications at 25 °C. |
| Qg max | 39 nC - Reduces gate driver power requirement and enables faster switching with standard logic-level drivers. |
| ID continuous | 8.0 A at TC = 25 °C - Sustains full-load current with 125 W power dissipation when heatsinked properly. |
| EAS | 510 mJ - Withstands unclamped inductive energy spikes in relay driving, solenoid control, and flyback snubberless designs. |
| RthJC | 1.0 °C/W - Allows precise junction temperature estimation using case temperature measurement in thermal design. |
| VGS rating | ±30 V - Permits robust gate drive with margin against transients and overshoot in noisy industrial environments. |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated thermal pad; 3-terminal configuration optimized for high-current PCB mounting and thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V threshold logic-level drive; ultra-low Qg (39 nC) minimizes driver losses and EMI during transitions. |
| D (Drain) | High-voltage output node | Connected to 500 V-rated drain-source path; bonded directly to thermal pad for low RthJC (1.0 °C/W). |
| S (Source) | Reference and return path | Serves as common reference for gate drive and current sensing; body diode anode enables freewheeling in buck/flyback topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | 39 nC total charge enables use of low-power gate drivers and reduces switching losses in MHz-range converters. |
| Enhanced ±30 V VGS rating | Provides 10 V margin above standard 20 V gate drive, improving immunity to ringing and transient overstress. |
| Reduced Ciss/Coss/Crss | 1100 pF / 170 pF / 18 pF values minimize Miller effect and improve controllability in high-dV/dt environments. |
| Repetitive avalanche rated | 13 mJ energy rating allows safe operation under repeated inductive turn-off stress without derating. |
| Low RDS(on) temperature coefficient | +0.63 V/°C VDS coefficient ensures stable breakdown voltage across -55 to +150 °C operating range. |
Applications
| Switch-Mode Power Supply | Flyback Converter Primary Switch |
|---|---|
|
Use Scenario: High-efficiency 50–200 W offline AC-DC adapter with universal input (85–265 VAC). IC Role / Device Role / Timing Role: Primary-side high-voltage switching transistor handling 400 V DC bus and 8 A peak current. Use Value: 500 V VDS and 510 mJ EAS eliminate need for external snubbers; low Qg enables >300 kHz operation with minimal driver loss. |
Use Scenario: Isolated DC-DC converter for industrial PLC I/O modules with 24 V input and 5/12 V outputs. IC Role / Device Role / Timing Role: Main power switch in discontinuous conduction mode (DCM) flyback topology. Use Value: Repetitive avalanche rating (13 mJ) tolerates leakage inductance energy without clamping circuitry; fast body diode (trr ≤ 740 ns) reduces cross-conduction loss. |
| Motor Drive Half-Bridge | Inductive Load Switching |
|
Use Scenario: 24–48 V brushed DC motor controller for HVAC actuators and valve positioning systems. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration controlling bidirectional motor current. Use Value: 8.0 A continuous current and 28 A pulsed rating support stall conditions; ±30 V VGS withstands back-EMF transients up to ±25 V. |
Use Scenario: Solid-state relay replacement for 120/240 VAC solenoid and contactor control in building automation panels. IC Role / Device Role / Timing Role: Unclamped inductive switching element driving 500 mA–2 A inductive loads. Use Value: Verified 510 mJ single-pulse avalanche energy absorbs stored inductor energy safely; TO-263 thermal pad enables direct heatsink mounting for 100% duty cycle operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF840PBF | Same die, but in through-hole TO-220 package; RthJA = 62 °C/W vs. 40 °C/W for IRF840LCSTRR; no thermal pad. | Limited to lower-power or forced-air-cooled designs; unsuitable for high-density SMT layouts. | Choose IRF840PBF only if board space permits through-hole mounting and thermal budget allows higher junction rise. |
| STP8NK50ZFP | Zener-protected gate (±20 V max); higher RDS(on) (0.95 Ω); lower Qg (25 nC); same 500 V/8 A rating. | Better gate transient immunity but less robust avalanche capability (EAS = 320 mJ); optimized for ZVS resonant converters. | Select STP8NK50ZFP where gate protection is critical and avalanche stress is infrequent; IRF840LCSTRR preferred for hard-switched inductive loads. |
Compared with IRF840PBF, IRF840LCSTRR offers superior thermal performance and SMT compatibility; versus STP8NK50ZFP, it trades slightly higher Qg for significantly higher avalanche ruggedness-making it the preferred choice for unclamped inductive switching in industrial power stages.
Availability
IRF840LCSTRR is available at Aetrix Electronics and suitable for switch-mode power supplies, motor control circuits, and industrial relay replacement applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRF840LCSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF840LCSTRR belongs to Vishay's LCDMOS low-charge power MOSFET family, engineered specifically for high-frequency, high-efficiency switching applications where gate drive efficiency, avalanche ruggedness, and thermal performance are critical.
FAQ
What is the maximum continuous drain current for IRF840LCSTRR at 100 °C case temperature?
The IRF840LCSTRR supports 5.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated against actual board layout and heatsinking. The IRF840LCSTRR maintains its 0.85 Ω RDS(on) up to 125 °C junction temperature, enabling predictable conduction loss calculation across operating range.
Does IRF840LCSTRR have avalanche capability, and how is it rated?
Yes, the IRF840LCSTRR is explicitly rated for repetitive avalanche operation with 13 mJ energy per pulse and single-pulse avalanche energy of 510 mJ. These ratings are validated per test conditions in Figure 12 (L = 14 mH, Rg = 25 Ω, IAS = 8.0 A). The IRF840LCSTRR's ruggedness makes it suitable for unclamped inductive switching in motor drives and relay replacements without external snubbers.
What is the gate threshold voltage range for IRF840LCSTRR?
The IRF840LCSTRR has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity. The IRF840LCSTRR's ±30 V VGS rating further guarantees gate oxide integrity under transient conditions beyond typical drive levels.
How does the body diode performance of IRF840LCSTRR compare to standard power MOSFETs?
The IRF840LCSTRR features a fast, soft-recovery body diode with trr = 490–740 ns and Qrr = 3.0–4.5 μC at IF = 8.0 A and dI/dt = 100 A/μs. This outperforms many legacy MOSFETs in flyback and synchronous rectification applications by reducing switching loss and EMI. The IRF840LCSTRR's body diode forward voltage is 2.0 V at 8.0 A, confirming low conduction loss during freewheeling.
Is IRF840LCSTRR RoHS-compliant and halogen-free?
Yes, the IRF840LCSTRR is lead (Pb)-free and halogen-free, as confirmed by Vishay's ordering information and material categorization documentation (www.vishay.com/doc?99912). The "TRR" suffix denotes tape-and-reel packaging compliant with RoHS Directive 2011/65/EU and JEDEC JS709 standards. The IRF840LCSTRR meets Vishay's green initiative requirements without performance trade-offs.
IRF840LCSTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF840LCSTRR FAQ
1.How can I place an order for IRF840LCSTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF840LCSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF840LCSTRR reliable?
The price and inventory of IRF840LCSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840LCSTRR is usually 5 days.
3.What payment methods are accepted for IRF840LCSTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840LCSTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF840LCSTRR?
IRF840LCSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF840LCSTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF840LCSTRR?
For technical support, including IRF840LCSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840LCSTRR requirements.
6.How does Aetrix verify that IRF840LCSTRR is sourced from the original manufacturer or authorized distributors?
All IRF840LCSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840LCSTRR meets industry standards.
7.What is the process for return or replacement of IRF840LCSTRR?
All IRF840LCSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF840LCSTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF840LCSTRR part is unused and in its original packaging.
Return procedure for IRF840LCSTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF840LCSTRR Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
