Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840LCSTRRPBF

Name: IRF840LCSTRRPBF
Brand: Vishay Siliconix
SKU: IRF840LCSTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF840LCSTRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF840LCSTRRPBF.pdf

Description:: MOSFET N-CH 500V 8A TO263AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,560

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF840LCSTRRPBF from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits.

For engineers reviewing the IRF840LCSTRRPBF datasheet, IRF840LCSTRRPBF pinout, IRF840LCSTRRPBF application, or IRF840LCSTRRPBF equivalent, this part delivers ultra-low gate charge, enhanced ±30 V gate rating, reduced C_iss/C_oss/C_rss, and validated 3.5 V/ns peak diode recovery dV/dt performance in rugged high-voltage switching roles.

Technical Context

This device employs Vishay's LCDMOS (Low Charge Device MOSFET) technology to achieve significantly lower gate charge versus conventional power MOSFETs without added cost. Its design enables reduced gate drive requirements and lower switching losses in MHz-range operation at high current.

The IRF840LCSTRRPBF integrates a robust body diode with 490–740 ns reverse recovery time and 3.0–4.5 μC Q_rr, and is rated for repetitive avalanche energy (13 mJ) and single-pulse avalanche (510 mJ), supporting reliable unclamped inductive switching in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin
R_DS(on)	0.85 Ω @ V_GS = 10 V - limits conduction loss to ≤3.3 W at 8 A continuous drain current
Q_g	39 nC max - enables efficient gate driving with standard 1-A peak drivers at ≥500 kHz
I_D (T_C = 100 °C)	5.1 A - defines thermal-limited continuous current in compact heatsinked layouts
E_AS	510 mJ - sustains single-pulse inductive energy without failure under unclamped conditions
dV/dt (diode)	3.5 V/ns - ensures stable commutation during fast body diode turn-off in bridge configurations
T_J range	−55 to +150 °C - qualified for industrial and extended-temperature embedded power stages

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) optimized for high-current PCB layout and thermal management.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; ±30 V absolute max rating prevents gate oxide damage during transients
D (Drain)	High-side power output	Connected to exposed copper pad on bottom of package; carries full load current and dissipates heat directly to PCB
S (Source)	Reference node / return path	Provides low-inductance source return; ties to power ground plane and gate driver reference

Key Features

Feature	Design Value
Ultra-low gate charge	39 nC total charge enables faster switching transitions and reduced driver power consumption
Enhanced V_GS rating	±30 V gate-source voltage withstand improves robustness against gate ringing and ESD events
Reduced capacitance	C_iss = 1100 pF, C_oss = 170 pF, C_rss = 18 pF - lowers Miller effect and improves high-frequency stability
Repetitive avalanche rated	13 mJ per pulse - allows reliable operation in non-clamped inductive loads without snubbers
High-frequency capability	Validated operation into multi-MHz range at high current - suitable for resonant LLC and advanced ZVS topologies

Applications

Switch-Mode Power Supply	DC-DC Converter
Use Scenario: Primary-side switching in 100–500 W offline AC/DC adapters and open-frame PSUs. IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor in flyback or forward converter topology. Use Value: 500 V V_DS and 8 A I_D support universal input (85–265 VAC) designs with margin; low Q_g reduces driver losses at 65–130 kHz.	Use Scenario: Isolated or non-isolated step-down conversion in telecom and server POL modules. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in active clamp forward or half-bridge configuration. Use Value: 0.85 Ω R_DS(on) minimizes conduction loss at 12–48 V input; 3.5 V/ns dV/dt rating ensures clean body diode commutation.
Motor Drive Stage	Inductive Load Switching
Use Scenario: Half-bridge leg in 24–48 V BLDC or stepper motor controllers for industrial automation. IC Role / Device Role / Timing Role: Low-side or high-side power switch handling PWM-driven inductive phase currents. Use Value: Repetitive avalanche rating (13 mJ) tolerates back-EMF spikes during rapid PWM transitions without external clamping.	Use Scenario: Solenoid, relay, and transformer primary switching in programmable logic controllers and HVAC controls. IC Role / Device Role / Timing Role: Single-ended unclamped inductive switch managing stored energy release. Use Value: 510 mJ single-pulse avalanche energy (E_AS) eliminates need for snubber networks in cost-sensitive industrial I/O modules.

Switch-Mode Power Supply

DC-DC Converter

Use Scenario: Primary-side switching in 100–500 W offline AC/DC adapters and open-frame PSUs.

IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor in flyback or forward converter topology.

Use Value: 500 V V_DS and 8 A I_D support universal input (85–265 VAC) designs with margin; low Q_g reduces driver losses at 65–130 kHz.

Use Scenario: Isolated or non-isolated step-down conversion in telecom and server POL modules.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in active clamp forward or half-bridge configuration.

Use Value: 0.85 Ω R_DS(on) minimizes conduction loss at 12–48 V input; 3.5 V/ns dV/dt rating ensures clean body diode commutation.

Motor Drive Stage

Inductive Load Switching

Use Scenario: Half-bridge leg in 24–48 V BLDC or stepper motor controllers for industrial automation.

IC Role / Device Role / Timing Role: Low-side or high-side power switch handling PWM-driven inductive phase currents.

Use Value: Repetitive avalanche rating (13 mJ) tolerates back-EMF spikes during rapid PWM transitions without external clamping.

Use Scenario: Solenoid, relay, and transformer primary switching in programmable logic controllers and HVAC controls.

IC Role / Device Role / Timing Role: Single-ended unclamped inductive switch managing stored energy release.

Use Value: 510 mJ single-pulse avalanche energy (E_AS) eliminates need for snubber networks in cost-sensitive industrial I/O modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V, 7.5 A, R_DS(on) = 0.95 Ω, Q_g = 32 nC, TO-220FP package	Lower gate charge but higher on-resistance and through-hole mounting	Preferred where board space permits through-hole assembly and lower driver power is critical
IXTH8N50L2	500 V, 8 A, R_DS(on) = 0.85 Ω, Q_g = 42 nC, TO-247 package	Same R_DS(on), slightly higher Q_g, larger through-hole package with superior thermal R_thJC (0.65 °C/W)	Chosen when higher power dissipation (>150 W) and forced-air cooling require lower junction-to-case resistance

Compared with STP8NK50ZFP and IXTH8N50L2, the IRF840LCSTRRPBF offers surface-mount D2PAK packaging with competitive R_DS(on) and gate charge, enabling compact, automated assembly while maintaining robust avalanche capability and high-frequency switching integrity.

Availability

IRF840LCSTRRPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, and motor control systems requiring stable component supply, long-term production continuity, and RoHS-compliant sourcing.

Supply support for IRF840LCSTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-frequency performance.

The IRF840LCSTRRPBF belongs to Vishay's LCDMOS family-engineered specifically for high-efficiency, high-frequency power conversion where low gate charge and avalanche robustness are critical system requirements.

FAQ

What is the maximum continuous drain current for IRF840LCSTRRPBF at 100 °C case temperature?

The IRF840LCSTRRPBF has a maximum continuous drain current of 5.1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance (R_thJC = 1.0 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit. The IRF840LCSTRRPBF must be mounted on a PCB with adequate copper area to maintain this thermal boundary.

Does IRF840LCSTRRPBF support logic-level gate drive?

No, the IRF840LCSTRRPBF is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Full enhancement requires ≥10 V gate drive; operation below 8 V results in significantly increased on-resistance and conduction loss. The IRF840LCSTRRPBF is intended for standard gate driver circuits-not 3.3 V or 5 V microcontroller direct drive.

What is the avalanche energy rating of IRF840LCSTRRPBF, and how is it tested?

The IRF840LCSTRRPBF is rated for 510 mJ single-pulse avalanche energy (E_AS) and 13 mJ repetitive avalanche energy (E_AR). Testing follows the unclamped inductive switching (UIS) method per JEDEC standards: L = 14 mH, R_g = 25 Ω, I_AS = 8.0 A, starting T_J = 25 °C. The IRF840LCSTRRPBF uses internal silicon ruggedness-not external components-to absorb inductive energy, enabling snubberless design in flyback and relay drivers.

How does the body diode performance of IRF840LCSTRRPBF compare to standard power MOSFETs?

The IRF840LCSTRRPBF features a fast, soft-recovery body diode with t_rr = 490–740 ns and Q_rr = 3.0–4.5 μC at T_J = 25 °C, IS = 8.0 A, and dI/dt = 100 A/μs. Its peak diode recovery dV/dt rating is 3.5 V/ns-higher than many legacy 500 V MOSFETs-reducing voltage overshoot and EMI in bridge configurations. The IRF840LCSTRRPBF body diode is integral to its ruggedness and enables reliable synchronous rectification in certain topologies.

Is IRF840LCSTRRPBF RoHS-compliant and halogen-free?

Yes, IRF840LCSTRRPBF is lead (Pb)-free and halogen-free, compliant with EU RoHS Directive 2011/65/EU and Vishay's material categorization standard (document 99912). The "TRRPBF" suffix explicitly denotes tape-and-reel packaging with Pb-free terminations and halogen-free molding compound. The IRF840LCSTRRPBF meets IPC/JEDEC J-STD-609A Class 1 for marking and reporting of hazardous substances.

IRF840LCSTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF840LCSTRRPBF FAQ

1.How can I place an order for IRF840LCSTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840LCSTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840LCSTRRPBF reliable?

The price and inventory of IRF840LCSTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840LCSTRRPBF is usually 5 days.

3.What payment methods are accepted for IRF840LCSTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840LCSTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840LCSTRRPBF?

IRF840LCSTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840LCSTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840LCSTRRPBF?

For technical support, including IRF840LCSTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840LCSTRRPBF requirements.

6.How does Aetrix verify that IRF840LCSTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF840LCSTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840LCSTRRPBF meets industry standards.

7.What is the process for return or replacement of IRF840LCSTRRPBF?

All IRF840LCSTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840LCSTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840LCSTRRPBF part is unused and in its original packaging.

Return procedure for IRF840LCSTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …