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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840LPBF

Name: IRF840LPBF
Brand: Vishay Siliconix
SKU: IRF840LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF840LPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF840LPBF.pdf

Description:: MOSFET N-CH 500V 8A TO263AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF840LPBF from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in I2PAK (TO-262) package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and repetitive avalanche rating. It serves as a high-voltage switching element in offline SMPS, motor drives, and DC-DC converters requiring ruggedness and fast turn-on/turn-off.

For engineers reviewing the IRF840LPBF datasheet, IRF840LPBF pinout, IRF840LPBF application, or IRF840LPBF equivalent, key selection criteria include its 500 V V_DS, 8.0 A continuous drain current at T_C = 25 °C, 1.0 °C/W junction-to-case thermal resistance, 3.5 V/ns peak diode recovery dV/dt, and halogen-free, RoHS-compliant construction.

Technical Context

This third-generation Power MOSFET uses planar V-groove silicon technology optimized for high-voltage switching with low conduction loss and robust avalanche capability. Its dynamic dV/dt rating and 510 mJ single-pulse avalanche energy support reliable operation under inductive load switching transients.

The device integrates a fast-recovery body diode with 460–970 ns reverse recovery time (t_rr) and 4.2–8.9 μC reverse recovery charge (Q_rr), enabling efficient freewheeling in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in universal-input AC-DC supplies up to 400 V DC bus
R_DS(on)	0.85 Ω @ V_GS = 10 V - limits conduction loss to ≤6.9 W at 8 A, enabling compact heatsinking
Q_g	63 nC - determines gate drive power requirement (~1.3 mW per MHz at 10 V drive)
I_D (continuous)	8.0 A @ T_C = 25 °C - defines maximum steady-state current with adequate case cooling
E_AS	510 mJ - enables unclamped inductive switching at 8 A without failure, critical for relay/snubberless designs
R_thJC	1.0 °C/W - allows 125 W dissipation with ≤125 °C junction rise above 25 °C case temperature
t_rr	460–970 ns - constrains minimum dead-time in half-bridge configurations to avoid shoot-through

Pinout & Package

I2PAK (TO-262) package with isolated tab (drain-connected), 3-pin through-hole outline, 15.88 mm height, and 1.0 °C/W junction-to-case thermal resistance. Tab is electrically connected to drain for low-inductance heat path and simplified mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 9.3 nC Q_gs ensures fast turn-on with standard MOSFET drivers
D (Drain)	High-side power terminal	Connected to tab; must be electrically isolated from heatsink unless referenced to same potential
S (Source)	Power return and reference node	Serves as local ground for gate drive; internal source inductance (L_S = 7.5 nH) affects switching waveform ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 8.0 A repetitive avalanche current and 13 mJ energy-enables reliable operation in inductive switching without external clamps
Dynamic dV/dt rating	3.5 V/ns - prevents false turn-on during high-slew-rate voltage transients across drain-source
Fast switching	14 ns turn-on delay + 23 ns rise time - reduces switching losses in 50–100 kHz SMPS designs
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - satisfies environmental compliance for global industrial shipments
Low R_DS(on) × Q_g figure of merit	53.55 Ω·nC - balances conduction and switching loss for cost-sensitive high-voltage power stages

Applications

Offline AC-DC SMPS	Industrial Motor Drives
Use Scenario: Primary-side switch in 50–150 W flyback or forward converters with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates at 50–100 kHz with duty cycle modulation. Use Value: 500 V V_DS margin accommodates 400 V DC bus plus line surges; 0.85 Ω R_DS(on) keeps conduction loss below 7 W at full load.	Use Scenario: Half-bridge leg in 100–500 W BLDC or stepper motor controllers driving inductive loads. IC Role / Device Role / Timing Role: Low-side or high-side switching element handling pulsed currents up to 32 A peak; synchronized with complementary PWM signals. Use Value: 32 A pulsed drain current and 510 mJ E_AS tolerate motor back-EMF spikes without avalanche failure.
DC-DC Converters	Lighting Ballasts
Use Scenario: Primary switch in isolated 24–48 V input DC-DC modules for telecom or industrial power distribution. IC Role / Device Role / Timing Role: Main power transistor in phase-shifted full-bridge or active-clamp forward topology; switches at fixed frequency with variable phase. Use Value: 63 nC Q_g enables efficient gate drive with low-power IC drivers; 1.0 °C/W R_thJC simplifies thermal design for 125 W operation.	Use Scenario: Resonant switch in electronic CFL or HID lamp ballasts operating at 20–100 kHz. IC Role / Device Role / Timing Role: Series resonant switch controlling lamp ignition and regulation; subjected to high dv/dt during zero-voltage switching transitions. Use Value: 3.5 V/ns peak diode recovery dV/dt rating prevents spurious turn-on during rapid voltage reversal across body diode.

Offline AC-DC SMPS

Industrial Motor Drives

Use Scenario: Primary-side switch in 50–150 W flyback or forward converters with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates at 50–100 kHz with duty cycle modulation.

Use Value: 500 V V_DS margin accommodates 400 V DC bus plus line surges; 0.85 Ω R_DS(on) keeps conduction loss below 7 W at full load.

Use Scenario: Half-bridge leg in 100–500 W BLDC or stepper motor controllers driving inductive loads.

IC Role / Device Role / Timing Role: Low-side or high-side switching element handling pulsed currents up to 32 A peak; synchronized with complementary PWM signals.

Use Value: 32 A pulsed drain current and 510 mJ E_AS tolerate motor back-EMF spikes without avalanche failure.

DC-DC Converters

Lighting Ballasts

Use Scenario: Primary switch in isolated 24–48 V input DC-DC modules for telecom or industrial power distribution.

IC Role / Device Role / Timing Role: Main power transistor in phase-shifted full-bridge or active-clamp forward topology; switches at fixed frequency with variable phase.

Use Value: 63 nC Q_g enables efficient gate drive with low-power IC drivers; 1.0 °C/W R_thJC simplifies thermal design for 125 W operation.

Use Scenario: Resonant switch in electronic CFL or HID lamp ballasts operating at 20–100 kHz.

IC Role / Device Role / Timing Role: Series resonant switch controlling lamp ignition and regulation; subjected to high dv/dt during zero-voltage switching transitions.

Use Value: 3.5 V/ns peak diode recovery dV/dt rating prevents spurious turn-on during rapid voltage reversal across body diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V, 7.5 A, R_DS(on) = 0.95 Ω, Q_g = 45 nC, TO-220FP package	Lower gate charge reduces driver loss but higher R_DS(on) increases conduction loss at >6 A	Preferred where gate drive power is constrained and average current <6 A
FQP50N06L	60 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 105 nC, TO-220 package	Lower voltage rating precludes use in >100 V DC bus; higher current capacity irrelevant in 500 V systems	Not suitable as direct replacement; only viable in low-voltage (<80 V) high-current applications

Compared with STP8NK50ZFP, IRF840LPBF offers higher continuous current (8.0 A vs. 7.5 A) and superior avalanche ruggedness (510 mJ vs. 320 mJ), making it more robust in unclamped inductive switching. FQP50N06L is incompatible due to 60 V V_DS limit-cannot substitute in 400 V bus applications.

Availability

IRF840LPBF is available at Aetrix Electronics and suitable for offline AC-DC SMPS, industrial motor drives, and lighting ballasts requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF840LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRF840L family targets cost-sensitive, high-reliability power conversion applications demanding avalanche tolerance, fast switching, and RoHS/halogen-free compliance-particularly in industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current for IRF840LPBF at 100 °C case temperature?

The IRF840LPBF supports 5.1 A continuous drain current at T_C = 100 °C, derated linearly from 8.0 A at 25 °C using a 1.0 W/°C derating factor. This reflects thermal limitation of the I2PAK package's 1.0 °C/W R_thJC; actual usable current depends on heatsink efficiency and ambient conditions. The IRF840LPBF datasheet specifies this value in Absolute Maximum Ratings Table.

Does IRF840LPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF840LPBF integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include 8.0 A continuous source-drain current, 2.0 V forward voltage at 8 A and 25 °C, and 460–970 ns reverse recovery time (t_rr) with 4.2–8.9 μC reverse recovery charge (Q_rr). These values are measured under specified test conditions in the IRF840LPBF datasheet.

Is IRF840LPBF pin-compatible with older IRF840 variants like IRF840PbF?

No-IRF840LPBF is not pin-compatible with legacy IRF840PbF. The "L" suffix denotes Vishay's third-generation design with enhanced avalanche rating, dynamic dV/dt capability, and halogen-free construction, but retains identical I2PAK (TO-262) mechanical footprint and 3-pin G-D-S terminal arrangement. Electrical pinout is identical, though thermal and ruggedness specs differ significantly.

What is the gate threshold voltage range for IRF840LPBF, and how does it affect drive requirements?

The IRF840LPBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, confirming standard-level-not logic-level-drive compatibility. Reliable enhancement requires ≥10 V gate drive to achieve rated R_DS(on) of 0.85 Ω; operation below 8 V results in significantly higher on-resistance and conduction loss. This is explicitly defined in the IRF840LPBF specifications table.

Can IRF840LPBF be paralleled for higher current handling, and what design considerations apply?

Yes, the IRF840LPBF is designed for ease of paralleling, as confirmed by Vishay's official features list. Key considerations include matched gate resistors (≤25 Ω recommended), symmetrical PCB layout to minimize loop inductance, and individual source resistors for current balancing. Its positive R_DS(on) temperature coefficient ensures inherent current sharing stability across temperature gradients-critical when deploying multiple IRF840LPBF units in high-power inverters or UPS systems.

IRF840LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF840LPBF FAQ

1.How can I place an order for IRF840LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840LPBF reliable?

The price and inventory of IRF840LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840LPBF is usually 5 days.

3.What payment methods are accepted for IRF840LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840LPBF?

IRF840LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840LPBF?

For technical support, including IRF840LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840LPBF requirements.

6.How does Aetrix verify that IRF840LPBF is sourced from the original manufacturer or authorized distributors?

All IRF840LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840LPBF meets industry standards.

7.What is the process for return or replacement of IRF840LPBF?

All IRF840LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840LPBF part is unused and in its original packaging.

Return procedure for IRF840LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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