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Vishay Siliconix IRF840STRLPBF
- Part No.:
- IRF840STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF840STRLPBF.pdf
- Description:
- MOSFET N-CH 500V 8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,368
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Product details
Overview
IRF840STRLPBF from Vishay Siliconix is a 500 V, 8.0 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, featuring 0.85 Ω RDS(on) at VGS = 10 V, 63 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switching in offline SMPS, motor drives, and DC-DC converters.
For engineers reviewing the IRF840STRLPBF datasheet, IRF840STRLPBF pinout, IRF840STRLPBF application, or IRF840STRLPBF equivalent, key selection criteria include its 500 V blocking capability, 125 W TC power dissipation, fast 14 ns turn-on delay, rugged unclamped inductive switching performance (EAS = 510 mJ), and compatibility with standard gate drivers requiring only 10 V drive.
Technical Context
This third-generation power MOSFET employs planar V-groove silicon technology optimized for high-voltage operation with low conduction loss and robust dynamic dV/dt immunity (3.5 V/ns). Its design integrates a low-inductance D2PAK package with internal source/drain inductances of 7.5 nH and 4.5 nH respectively, enabling stable high-speed switching under hard commutation.
The device supports repetitive avalanche operation up to 8.0 A and 13 mJ per pulse, with body diode recovery time (trr) specified at 460–970 ns and Qrr of 4.2–8.9 μC-critical for snubberless flyback and resonant topologies where diode reverse recovery impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports primary-side switching in universal-input AC/DC supplies up to 375 V DC link. |
| RDS(on) @ VGS = 10 V | 0.85 Ω - Delivers ≤ 34 W conduction loss at 8 A continuous drain current (TC = 25 °C). |
| Qg | 63 nC - Determines gate driver power requirement; compatible with common 1-A peak drivers (e.g., IR2110, UCC27531). |
| EAS | 510 mJ - Enables reliable unclamped inductive switching without external snubbers in relay drivers or solenoid controls. |
| trr | 460–970 ns - Defines minimum dead-time requirements in half-bridge configurations to prevent shoot-through. |
| RthJC | 1.0 °C/W - Allows direct thermal coupling to heatsinks; enables 125 W power handling with ≤ 125 °C junction rise above case. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G-D-S), lead (Pb)-free and halogen-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level signal; input capacitance Ciss = 1300 pF requires careful PCB layout to minimize ringing. |
| D (Drain) | High-side power terminal | Connected to exposed copper pad on bottom surface; carries full load current and must be routed with low-inductance copper pour. |
| S (Source) | Reference node / return path | Common reference for gate drive; internal source inductance (LS = 7.5 nH) affects switching waveform fidelity and dI/dt sensitivity. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 8.0 A, 13 mJ pulses repeatedly-eliminates need for external clamping in inductive load switching. |
| Dynamic dV/dt immunity | Rated 3.5 V/ns-prevents false turn-on during high dv/dt transients in high-frequency converters. |
| Fast switching | 14 ns td(on), 23 ns tr, 49 ns td(off), 20 ns tf-supports >100 kHz operation with minimal switching loss. |
| Low RDS(on) × Qg figure-of-merit | 53.55 Ω·nC-balances conduction and switching losses for medium-frequency SMPS optimization. |
| Surface-mount D2PAK package | Enables automated assembly and high-power density; thermal pad allows direct PCB heat sinking without mechanical fasteners. |
Applications
| AC/DC Switching Power Supplies | DC Motor Drives |
|---|---|
|
Use Scenario: Primary-side switch in 65–150 W offline flyback and forward converters with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer; operates at 65–130 kHz with zero-voltage switching assist. Use Value: 500 V rating ensures margin over 400 V DC bus; 0.85 Ω RDS(on) limits conduction loss to <1.5 W at 4 A RMS, improving efficiency by ≥0.8% vs. legacy 1.2 Ω alternatives. |
Use Scenario: Half-bridge high-side switch in 24–48 V brushed DC motor controllers for industrial actuators and HVAC dampers. IC Role / Device Role / Timing Role: Sustained 8 A pulsed current delivery with 32 A peak capability; body diode handles freewheeling current during PWM off-time. Use Value: 460–970 ns trr and 4.2–8.9 μC Qrr enable precise dead-time control; reduces voltage overshoot and EMI compared to slower diodes. |
| Inductive Load Drivers | Uninterruptible Power Supplies (UPS) |
|
Use Scenario: Solenoid, relay, and valve driver in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Unclamped inductive switching element absorbing stored energy via intrinsic avalanche mechanism. Use Value: 510 mJ single-pulse avalanche energy rating eliminates need for external TVS or RCD snubbers-reducing BOM count and board area by ≥30%. |
Use Scenario: DC-link switch in line-interactive UPS inverters managing battery-to-AC conversion during mains failure. IC Role / Device Role / Timing Role: Bidirectional current handling via integrated body diode; supports synchronous rectification in boost/buck stages. Use Value: 125 W TC power dissipation and 1.0 °C/W RthJC allow compact heatsink integration; enables 1 kVA design with <15 mm height constraint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK50ZFP | 500 V, 7.5 A, RDS(on) = 0.95 Ω, Qg = 42 nC, Zener-protected gate | Lower gate charge improves high-frequency efficiency but reduced current rating limits peak power handling | Preferred for <100 kHz, space-constrained designs where gate drive loss dominates |
| FQP50N06L | 60 V, 50 A, RDS(on) = 0.022 Ω, Qg = 110 nC, logic-level gate | Insufficient voltage rating for AC/DC primary side; suitable only for low-voltage DC-DC or motor phases | Valid alternative only in 12–48 V systems requiring higher current and lower RDS(on) |
Compared with STP8NK50ZFP and FQP50N06L, IRF840STRLPBF offers superior 500 V withstand capability and higher continuous current (8.0 A at TC = 25 °C), making it uniquely suited for universal-input offline power conversion where voltage margin and avalanche ruggedness are non-negotiable.
Availability
IRF840STRLPBF is available at Aetrix Electronics and suitable for AC/DC power supplies, motor control modules, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for IRF840STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRF840S family delivers third-generation planar MOSFETs engineered for high-voltage switching applications demanding ruggedness, fast dynamics, and cost-effective surface-mount integration-targeting offline SMPS, lighting ballasts, and industrial motor drives.
FAQ
What is the maximum continuous drain current for IRF840STRLPBF at 100 °C case temperature?
The maximum continuous drain current for IRF840STRLPBF is 5.1 A when the case temperature (TC) is maintained at 100 °C. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature. The 8.0 A rating applies only at TC = 25 °C. Designers must verify heatsinking to sustain required current at elevated ambient conditions.
Does IRF840STRLPBF have a built-in gate protection diode?
No, IRF840STRLPBF does not integrate a gate protection Zener diode. Its absolute maximum gate-source voltage is ±20 V, and designers must implement external gate clamping (e.g., 15 V Zener) if driving with higher-voltage controllers or in noisy environments. This differs from protected variants like STP8NK50ZFP, which include integrated gate Zener clamping.
Can IRF840STRLPBF be used in synchronous rectification topologies?
IRF840STRLPBF is not optimized for synchronous rectification due to its relatively high RDS(on) (0.85 Ω) and slow body diode recovery (trr = 460–970 ns). While the intrinsic body diode conducts reverse current, its Qrr and VSD = 2.0 V limit efficiency in low-voltage, high-current outputs. Dedicated synchronous rectifiers (e.g., SiR872DP) offer significantly better performance for this role.
What is the recommended PCB footprint for IRF840STRLPBF's D2PAK package?
The recommended minimum PCB footprint for IRF840STRLPBF follows Vishay's D2PAK land pattern: 0.420" × 0.355" (10.67 mm × 9.02 mm) thermal pad with 0.145" (3.68 mm) solder mask opening, and 0.200" (5.08 mm) lead spacing. Thermal vias under the drain pad (≥6×0.3 mm) are strongly advised to achieve RthJA ≤ 40 °C/W in PCB-mount configurations.
Is IRF840STRLPBF suitable for use in automotive applications?
IRF840STRLPBF is not AEC-Q101 qualified and lacks automotive-specific reliability testing or extended temperature validation beyond -55 °C to +150 °C. While its specs meet some under-hood voltage/current requirements, Vishay does not endorse it for safety-critical or mission-critical automotive systems. For such applications, designers should select AEC-Q101-certified alternatives like SQJQ480E.
IRF840STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF840STRLPBF FAQ
1.How can I place an order for IRF840STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF840STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF840STRLPBF reliable?
The price and inventory of IRF840STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF840STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF840STRLPBF?
IRF840STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF840STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF840STRLPBF?
For technical support, including IRF840STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840STRLPBF requirements.
6.How does Aetrix verify that IRF840STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF840STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF840STRLPBF?
All IRF840STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF840STRLPBF part is unused and in its original packaging.
Return procedure for IRF840STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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