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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF840STRRPBF

Name: IRF840STRRPBF
Brand: Vishay Siliconix
SKU: IRF840STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF840STRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF840STRRPBF.pdf

Description:: MOSFET N-CH 500V 8A D2PAK

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Product details

Overview

IRF840STRRPBF from Vishay Siliconix is a 500 V, 8.0 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switching in offline SMPS, motor drives, and DC-DC converters.

For engineers reviewing the IRF840STRRPBF datasheet, IRF840STRRPBF pinout, IRF840STRRPBF application, or IRF840STRRPBF equivalent, key selection criteria include its 500 V V_DS, 8.0 A continuous drain current at T_C = 25 °C, 125 W P_D (case), 460–970 ns body diode reverse recovery time, and D2PAK thermal performance with R_thJC = 1.0 °C/W.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family, optimized for fast switching and ruggedness in hard-switched topologies. Its design integrates low gate charge (Q_g = 63 nC) and low output capacitance (C_oss = 310 pF) to minimize switching losses while maintaining robust unclamped inductive switching capability (E_AS = 510 mJ).

The IRF840STRRPBF uses planar V-groove silicon technology with a built-in body diode rated for 8.0 A continuous source-drain current and 32 A pulsed current. It supports dynamic dV/dt of 3.5 V/ns and operates across -55 °C to +150 °C junction temperature range, with thermal resistance R_thJA = 40 °C/W when mounted on 1"² FR-4 PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in universal-input AC-DC supplies up to 400 V DC bus.
R_DS(on)	0.85 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 4.8 A, suitable for medium-power converters.
Q_g	63 nC - determines gate drive power requirement; compatible with standard 10 V logic-level drivers.
I_D (continuous)	8.0 A @ T_C = 25 °C - defines maximum steady-state current under heatsink-cooled conditions.
E_AS	510 mJ - allows safe operation during unclamped inductive turn-off events without external snubbers.
t_rr	460–970 ns - body diode recovery time impacts shoot-through risk in synchronous rectification or half-bridge configurations.
R_thJC	1.0 °C/W - enables efficient heat transfer from die to heatsink, critical for high-duty-cycle applications.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); lead (Pb)-free and halogen-free construction per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V drive signal; input capacitance C_iss = 1300 pF requires moderate gate driver strength.
D (Drain)	High-voltage power terminal	Connected to exposed copper pad; carries full load current and must be routed with low-inductance layout.
S (Source)	Reference node / return path	Common reference for gate drive and current sensing; internal source inductance L_S = 7.5 nH affects switching waveform fidelity.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under transient overloads without derating or external protection circuitry.
Dynamic dV/dt rating	3.5 V/ns immunity reduces risk of false turn-on in high-noise, high-dV/dt environments like flyback snubbers.
Fast switching	Turn-on delay 14 ns + rise time 23 ns supports >100 kHz switching frequencies with low energy loss.
Low R_DS(on) × Q_g figure-of-merit	53.55 Ω·nC - balances conduction and switching losses for optimized efficiency in 50–200 kHz SMPS designs.
Surface-mount D2PAK package	Supports automated assembly and delivers 2.0 W power dissipation on PCB alone, eliminating need for through-hole heatsinks.

Applications

Offline AC-DC Adapters	Industrial Motor Drives
Use Scenario: 30–60 W universal-input flyback converter powering industrial sensors or PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer from AC line to isolated output. Use Value: 500 V V_DS withstands 385 V DC bus with margin; 8.0 A rating supports peak currents in discontinuous conduction mode.	Use Scenario: Low-voltage (<100 V) BLDC motor phase-leg switching in HVAC blowers or conveyor controllers. IC Role / Device Role / Timing Role: Half-bridge low-side switch managing PWM-controlled current flow through motor windings. Use Value: Fast 23 ns rise time and 20 ns fall time enable precise PWM edge control; body diode t_rr < 1 μs minimizes commutation loss.
DC-DC Boost Converters	LED Driver Circuits
Use Scenario: 12 V to 48 V boost stage in telecom power shelf or PoE++ midspan equipment. IC Role / Device Role / Timing Role: High-side boost switch operating at 200 kHz with 50% duty cycle. Use Value: 0.85 Ω R_DS(on) limits conduction loss to <0.5 W at 10 A; Q_g = 63 nC ensures gate driver compatibility with UC384x controllers.	Use Scenario: Constant-current buck-boost LED driver for street lighting with 36–72 V output range. IC Role / Device Role / Timing Role: Primary switching element regulating average LED current via high-frequency PWM. Use Value: Repetitive avalanche rating absorbs inductive kickback from LED string inductor; 150 °C max T_J supports sealed outdoor enclosure operation.

Offline AC-DC Adapters

Industrial Motor Drives

Use Scenario: 30–60 W universal-input flyback converter powering industrial sensors or PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer from AC line to isolated output.

Use Value: 500 V V_DS withstands 385 V DC bus with margin; 8.0 A rating supports peak currents in discontinuous conduction mode.

Use Scenario: Low-voltage (<100 V) BLDC motor phase-leg switching in HVAC blowers or conveyor controllers.

IC Role / Device Role / Timing Role: Half-bridge low-side switch managing PWM-controlled current flow through motor windings.

Use Value: Fast 23 ns rise time and 20 ns fall time enable precise PWM edge control; body diode t_rr < 1 μs minimizes commutation loss.

DC-DC Boost Converters

LED Driver Circuits

Use Scenario: 12 V to 48 V boost stage in telecom power shelf or PoE++ midspan equipment.

IC Role / Device Role / Timing Role: High-side boost switch operating at 200 kHz with 50% duty cycle.

Use Value: 0.85 Ω R_DS(on) limits conduction loss to <0.5 W at 10 A; Q_g = 63 nC ensures gate driver compatibility with UC384x controllers.

Use Scenario: Constant-current buck-boost LED driver for street lighting with 36–72 V output range.

IC Role / Device Role / Timing Role: Primary switching element regulating average LED current via high-frequency PWM.

Use Value: Repetitive avalanche rating absorbs inductive kickback from LED string inductor; 150 °C max T_J supports sealed outdoor enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V, 7.5 A, R_DS(on) = 0.95 Ω, Q_g = 45 nC, TO-220FP package	Lower gate charge but higher on-resistance and through-hole mounting	Prefer for lower drive loss in space-constrained layouts where PCB heatsinking is impractical.
IXTP8N50D2	500 V, 8.0 A, R_DS(on) = 0.85 Ω, Q_g = 42 nC, TO-220 package	Same voltage/current rating but lower Q_g and no avalanche rating	Select when faster switching is prioritized and inductive transients are externally clamped.

Compared with STP8NK50ZFP and IXTP8N50D2, the IRF840STRRPBF offers superior avalanche ruggedness and surface-mount compatibility, making it preferred for automated manufacturing and unclamped inductive loads-though its higher Q_g demands stronger gate drive than IXTP8N50D2.

Availability

IRF840STRRPBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and DC-DC boost converters requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for IRF840STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The IRF840STRRPBF belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for demanding switching applications including offline power conversion, motor control, and industrial power supplies where avalanche capability and thermal robustness are essential.

FAQ

What is the maximum continuous drain current rating for IRF840STRRPBF at 100 °C case temperature?

The IRF840STRRPBF has a maximum continuous drain current of 5.1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be used in thermal design calculations alongside R_thJC = 1.0 °C/W to ensure junction temperature remains ≤150 °C.

Does IRF840STRRPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF840STRRPBF includes an integral body diode rated for 8.0 A continuous source-drain current and 32 A pulsed current. Key parameters include V_SD = 2.0 V at I_S = 8.0 A and T_J = 25 °C, reverse recovery time t_rr = 460–970 ns, and reverse recovery charge Q_rr = 4.2–8.9 μC-critical for evaluating commutation losses in bridge topologies.

What is the gate threshold voltage range for IRF840STRRPBF, and how does it affect drive requirements?

The gate threshold voltage V_GS(th) for IRF840STRRPBF is 2.0–4.0 V at I_D = 250 μA. This range confirms it is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. Drive circuits must supply sufficient voltage and current to overcome 63 nC total gate charge while managing 9.3 nC gate-source and 32 nC gate-drain charge components to ensure clean switching transitions.

Can IRF840STRRPBF be paralleled with identical units, and what design considerations apply?

Yes, IRF840STRRPBF is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Designers must match gate drive impedance, minimize layout asymmetry (especially source inductance L_S = 7.5 nH), and ensure uniform thermal coupling. The D2PAK package's low internal connection resistance further enhances parallel stability in high-current applications.

What is the single-pulse avalanche energy rating for IRF840STRRPBF, and under what test conditions is it measured?

The IRF840STRRPBF is rated for 510 mJ single-pulse avalanche energy (E_AS). This value is measured under conditions of V_DD = 50 V, starting T_J = 25 °C, L = 14 mH, R_g = 25 Ω, and I_AS = 8.0 A, per Figure 12 in the datasheet. It reflects the device's ability to absorb inductive energy during unclamped turn-off without failure, supporting robustness in flyback and forward converter designs.

IRF840STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF840STRRPBF FAQ

1.How can I place an order for IRF840STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF840STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF840STRRPBF reliable?

The price and inventory of IRF840STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF840STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF840STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF840STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF840STRRPBF?

IRF840STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF840STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF840STRRPBF?

For technical support, including IRF840STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF840STRRPBF requirements.

6.How does Aetrix verify that IRF840STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF840STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF840STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF840STRRPBF?

All IRF840STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF840STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF840STRRPBF part is unused and in its original packaging.

Return procedure for IRF840STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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