Infineon Technologies IRF8736PBF
- Part No.:
- IRF8736PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF8736PBF.pdf
- Description:
- MOSFET N-CH 30V 18A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:4,709
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Product details
Overview
IRF8736PBF from Infineon Technologies is a 30V, 14.4A N-channel Trench MOSFET in SO-8 package, optimized as a synchronous rectifier in isolated DC-DC converters and as a high-efficiency power switch in notebook CPU VRMs. It delivers 3.9 mΩ RDS(on) at VGS = 10 V, 17 nC total gate charge, and fully characterized avalanche capability (126 mJ EAS).
For engineers reviewing the IRF8736PBF datasheet, IRF8736PBF pinout, IRF8736PBF application, or IRF8736PBF equivalent, key selection criteria include low RDS(on) at 4.5 V drive, tight gate charge spec for high-frequency switching, SO-8 thermal performance, and body diode recovery (Qrr = 19–29 nC, trr = 16–24 ns) in synchronous rectification.
Technical Context
This MOSFET employs Infineon's HEXFET Trench technology to achieve ultra-low on-resistance with fast switching dynamics. Its gate threshold voltage (1.35–2.35 V) enables robust 4.5 V logic-level drive, while the 1.3–2.2 Ω gate resistance supports controlled turn-on/turn-off transitions without external gate resistors in many VRM designs.
The device integrates a co-packaged intrinsic body diode with specified reverse recovery parameters (Qrr, trr) and forward voltage (VSD ≤ 1.0 V at 14.4 A), making it suitable for synchronous rectification where diode conduction and commutation losses dominate efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in point-of-load converters |
| RDS(on) @ VGS = 10 V | 3.9 mΩ (typ) - Enables <1 W conduction loss at 14.4 A continuous current in notebook CPU power stages |
| Qg | 17 nC (typ) - Supports efficient 500 kHz–1 MHz switching in synchronous buck converters with minimal driver loss |
| EAS | 126 mJ - Rated single-pulse avalanche energy ensures ruggedness during unclamped inductive switching events |
| trr | 16–24 ns - Fast body diode recovery reduces cross-conduction loss and EMI in synchronous rectifier operation |
| RθJA | 50 °C/W - Thermal resistance enables 2.5 W dissipation at 70 °C ambient in standard SO-8 PCB layouts |
Pinout & Package
IRF8736PBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The package conforms to JEDEC MS-012AC and features gull-wing leads for automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Seven parallel internal drain connections tied to exposed thermal pad - primary current path and heat sink interface |
| 8 | Gate (G) | Control terminal requiring <17 nC charge to fully enhance; sensitive to ESD (±20 V max VGS) |
| Source (S) | Source (S) | Internal connection of pins 1–7 source terminals - forms common reference for gate drive and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Very low RDS(on) at 4.5 V VGS | Enables direct logic-level drive from PWM controllers without level-shifting, reducing BOM count in compact VRMs |
| Fully characterized avalanche voltage and current | Guarantees safe operation under transient overvoltage conditions in unregulated or faulted converter topologies |
| 100% tested for RG | Ensures consistent gate drive timing across production lots, critical for multi-phase current balancing |
| Lead-free and RoHS-compliant | Meets global environmental compliance requirements for consumer electronics and computing OEMs |
Applications
| Notebook Processor Power | Isolated DC-DC Converters |
|---|---|
Use Scenario: High-current, high-efficiency CPU/GPU voltage regulator module (VRM) in thin-and-light notebooks. IC Role / Device Role / Timing Role: Low-side synchronous MOSFET in multiphase buck converter, switching at 500 kHz–1 MHz. Use Value: 3.9 mΩ RDS(on) minimizes I²R loss at >10 A load currents, directly improving battery runtime and thermal headroom. | Use Scenario: Secondary-side synchronous rectifier in 48 V–12 V isolated flyback or forward converters for telecom/datacom systems. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode, commutated by controller-driven gate signal synchronized to transformer output. Use Value: Body diode trr ≤ 24 ns and Qrr ≤ 29 nC reduce switching loss and voltage overshoot during diode recovery, enabling >92% efficiency. |
| Server VRM Output Stage | Industrial PoL Converters |
Use Scenario: Final-stage point-of-load converter supplying core voltage to FPGAs or ASICs in rack-mounted servers. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch operating in continuous conduction mode (CCM) at 300–600 kHz. Use Value: 14.4 A continuous rating at 70 °C ambient allows single-device implementation for up to 15 A loads with margin, simplifying layout. | Use Scenario: Compact 24 V–3.3 V/5 V PoL supply in programmable logic controllers (PLCs) and industrial HMIs. IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck regulator, driven by integrated controller with 4.5 V logic-compatible gate output. Use Value: Gate threshold of 1.35–2.35 V ensures reliable turn-on with standard microcontroller GPIO or low-voltage PWM ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 4.0 mΩ @ 10 V; Qg = 18.5 nC; SO-8 with enhanced thermal pad | Slightly higher gate charge increases driver loss at >1 MHz; identical SO-8 footprint | Preferred for new designs targeting extended lifetime reliability via Vishay's qualified automotive-grade process |
| DMN3028LSD-13 | RDS(on) = 2.8 mΩ @ 10 V; Qg = 22 nC; dual N-channel in SO-8 | Lower RDS(on) improves conduction loss but higher Qg degrades high-frequency efficiency; requires dual-gate routing | Best suited for space-constrained dual-switch configurations where shared-source topology is acceptable |
Compared with SiR872DP-T1-GE3 and DMN3028LSD-13, IRF8736PBF offers the best balance of low gate charge and proven field reliability in high-volume notebook VRMs, while maintaining full SO-8 compatibility and lower cost in volume procurement.
Availability
IRF8736PBF is available at Aetrix Electronics and suitable for notebook processor power, isolated DC-DC converters, server VRM output stages, and industrial point-of-load converters requiring stable component supply and long-term manufacturing continuity.
Supply support for IRF8736PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power MOSFETs and GaN solutions.
The IRF8736PBF belongs to Infineon's HEXFET® Trench MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in portable computing and communications infrastructure.
FAQ
Is IRF8736PBF suitable for 4.5 V gate drive in synchronous buck converters?
Yes. With a gate threshold voltage range of 1.35–2.35 V and guaranteed RDS(on) ≤ 4.8 mΩ at VGS = 4.5 V, IRF8736PBF is explicitly characterized for logic-level drive. Its low Qg (17 nC) ensures fast, low-loss switching even with standard PWM controller gate drivers.
What is the maximum continuous drain current at 100 °C case temperature?
At TA = 70 °C, continuous drain current is rated at 14.4 A with VGS = 10 V. Derating follows the linear factor of 0.02 W/°C beyond 70 °C ambient. At 100 °C ambient, the practical continuous current is ~9.6 A assuming standard SO-8 PCB layout with 1 in² copper pour and no forced airflow.
Does IRF8736PBF include an integrated Schottky diode?
No. It contains only the intrinsic body diode formed by the MOSFET's vertical p-n junction. This diode has VSD ≤ 1.0 V at 14.4 A and trr = 16–24 ns. No external Schottky is needed for synchronous rectification, but its recovery behavior must be managed in gate timing.
Can IRF8736PBF replace IRF8734PBF in existing designs?
Yes, with verification. Both are SO-8 N-channel MOSFETs with identical pinout and 30 V rating, but IRF8736PBF has lower RDS(on) (3.9 mΩ vs. 4.5 mΩ) and slightly higher Qg (17 nC vs. 15.5 nC). Layout and gate drive strength should be confirmed to ensure stability at higher dV/dt.
IRF8736PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.8mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2315 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF8736PBF FAQ
1.How can I place an order for IRF8736PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF8736PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF8736PBF reliable?
The price and inventory of IRF8736PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF8736PBF is usually 5 days.
3.What payment methods are accepted for IRF8736PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF8736PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF8736PBF?
IRF8736PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF8736PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF8736PBF?
For technical support, including IRF8736PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF8736PBF requirements.
6.How does Aetrix verify that IRF8736PBF is sourced from the original manufacturer or authorized distributors?
All IRF8736PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF8736PBF meets industry standards.
7.What is the process for return or replacement of IRF8736PBF?
All IRF8736PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF8736PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF8736PBF part is unused and in its original packaging.
Return procedure for IRF8736PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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