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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9510

Name: IRF9510
Brand: Vishay Siliconix
SKU: IRF9510
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9510

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9510.pdf

Description:: MOSFET P-CH 100V 4A TO220AB

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Product details

Overview

IRF9510 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -100 V V_DS, 4.0 A continuous drain current at 25 °C, and 1.2 Ω R_DS(on) at V_GS = -10 V. It delivers rugged repetitive avalanche capability (E_AS = 200 mJ), fast switching (t_d(on) = 10 ns), and operates up to 175 °C junction temperature - commonly used in DC-DC converter high-side switches and linear regulators.

For engineers reviewing the IRF9510 datasheet, IRF9510 pinout, IRF9510 application, or IRF9510 equivalent, key selection criteria include verified -100 V blocking, confirmed TO-220AB thermal resistance (R_thJC = 3.5 °C/W), validated body diode recovery time (t_rr = 82–160 ns), and documented gate charge profile (Q_g = 8.7 nC) for PWM-driven load control.

Technical Context

This P-channel MOSFET uses third-generation silicon technology optimized for low R_DS(on) and robust avalanche performance. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard -10 V logic-level drive while maintaining noise immunity.

The device integrates a monolithic body diode with specified reverse recovery characteristics (Q_rr = 0.15–0.30 μC, t_rr = 82–160 ns) and supports unclamped inductive switching per JEDEC JESD24-11. Thermal design relies on direct case-to-heatsink mounting (R_thCS = 0.50 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports high-side switching in 48 V industrial bus and 24 V automotive systems without derating.
R_DS(on) @ V_GS = -10 V	1.2 Ω - Enables ≤4.8 W conduction loss at 2 A, suitable for thermally constrained PCB layouts.
Q_g	8.7 nC - Matches standard gate drivers (e.g., TC4420) with <20 ns rise/fall times under 24 Ω R_g.
E_AS	200 mJ - Withstands single-pulse inductive energy in motor gate-drive snubberless designs.
t_rr	82–160 ns - Limits cross-conduction risk in synchronous buck high-side operation with 100 A/μs dI/dt.
T_J max	+175 °C - Allows operation in sealed enclosures or high-ambient environments without forced air.

Pinout & Package

IRF9510 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. The package features 3 leads: Gate (G), Drain (D), and Source (S), with pin 1 = Gate, pin 2 = Drain, pin 3 = Source when viewed with label side up and leads pointing downward.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives negative V_GS to modulate channel; requires <100 nA leakage budget and 8.7 nC total charge for full turn-on.
Drain (D)	High-side power input	Connected to internal die backside and metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Source (S)	Power return / reference node	Serves as common reference for gate drive and load current return; body diode anode is internally tied here.

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for ≥4.3 mJ per pulse (I_AR = -4.0 A), enabling robustness in inductive load commutation without external clamping.
Dynamic dV/dt rating	Withstands -5.5 V/ns peak di/dt-induced transients, reducing false turn-on risk in noisy high-speed switching nodes.
Fast switching	10 ns turn-on delay + 27 ns rise time enables >500 kHz PWM operation with minimal overlap loss in half-bridge topologies.
TO-220AB thermal performance	R_thJC = 3.5 °C/W allows 43 W dissipation at T_C = 25 °C - sufficient for 12 V/3 A linear regulator or 24 V/2 A hot-swap FET.

Applications

DC-DC Converter High-Side Switch	Linear Regulator Pass Element
Use Scenario: Used as high-side switch in non-synchronous buck converters supplying 5–12 V to microcontroller subsystems from 24 V rail. IC Role / Device Role / Timing Role: P-channel MOSFET operating in linear or saturated mode; controls output voltage via gate voltage modulation. Use Value: Low R_DS(on) minimizes dropout voltage and thermal stress; -100 V rating accommodates load-dump transients.	Use Scenario: Functions as pass transistor in adjustable linear regulators powering analog sensor front-ends. IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output by dissipating excess input-output differential. Use Value: 175 °C max junction temperature enables stable operation under sustained 3 W dissipation without fan cooling.
Motor Control Brake FET	Hot-Swap Circuit Protection
Use Scenario: Implements dynamic braking in brushed DC motors by shorting armature terminals during deceleration. IC Role / Device Role / Timing Role: Fast-turning P-channel switch sinking motor back-EMF into supply or shunt resistor. Use Value: Repetitive avalanche rating absorbs stored inductive energy without failure across thousands of cycles.	Use Scenario: Controls inrush current during board insertion into live backplane or power distribution unit. IC Role / Device Role / Timing Role: Soft-start controlled high-side switch limiting dI/dt during capacitive load charging. Use Value: Verified Q_g and gate threshold enable precise RC-based turn-on timing; TO-220AB facilitates heatsinking during fault events.

DC-DC Converter High-Side Switch

Linear Regulator Pass Element

Use Scenario: Used as high-side switch in non-synchronous buck converters supplying 5–12 V to microcontroller subsystems from 24 V rail.

IC Role / Device Role / Timing Role: P-channel MOSFET operating in linear or saturated mode; controls output voltage via gate voltage modulation.

Use Value: Low R_DS(on) minimizes dropout voltage and thermal stress; -100 V rating accommodates load-dump transients.

Use Scenario: Functions as pass transistor in adjustable linear regulators powering analog sensor front-ends.

IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output by dissipating excess input-output differential.

Use Value: 175 °C max junction temperature enables stable operation under sustained 3 W dissipation without fan cooling.

Motor Control Brake FET

Hot-Swap Circuit Protection

Use Scenario: Implements dynamic braking in brushed DC motors by shorting armature terminals during deceleration.

IC Role / Device Role / Timing Role: Fast-turning P-channel switch sinking motor back-EMF into supply or shunt resistor.

Use Value: Repetitive avalanche rating absorbs stored inductive energy without failure across thousands of cycles.

Use Scenario: Controls inrush current during board insertion into live backplane or power distribution unit.

IC Role / Device Role / Timing Role: Soft-start controlled high-side switch limiting dI/dt during capacitive load charging.

Use Value: Verified Q_g and gate threshold enable precise RC-based turn-on timing; TO-220AB facilitates heatsinking during fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530	V_DS = -100 V, R_DS(on) = 0.3 Ω @ -10 V, Q_g = 56 nC - lower on-resistance but higher gate charge and cost.	Better conduction efficiency above 3 A; slower switching limits use in >200 kHz designs.	Select IRF9530 only when R_DS(on) reduction outweighs gate driver power and layout complexity increase.
STP9PF10	V_DS = -100 V, R_DS(on) = 1.4 Ω @ -10 V, E_AS = 120 mJ - slightly higher on-resistance, lower avalanche energy.	Adequate for static switching; less suited for unclamped inductive loads requiring >150 mJ margin.	Prefer STP9PF10 where cost sensitivity dominates and avalanche stress is mitigated by external clamping.

Compared with IRF9510, IRF9530 offers lower conduction loss but demands stronger gate drive and sacrifices switching speed, while STP9PF10 trades marginal R_DS(on) increase for reduced avalanche margin - making IRF9510 the balanced choice for mid-frequency, thermally constrained, and inductively stressed applications.

Availability

IRF9510 is available at Aetrix Electronics and suitable for DC-DC converter high-side switches, linear regulator pass elements, and motor brake circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free/halogen-free variants (IRF9510PbF-BE3).

Supply support for IRF9510 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.

The IRF9510 belongs to Vishay's third-generation power MOSFET family engineered for commercial-industrial power conversion, emphasizing fast switching, low R_DS(on), and repetitive avalanche survivability in TO-220AB packaging.

FAQ

What is the maximum continuous drain current for IRF9510 at 100 °C case temperature?

The IRF9510 supports -2.8 A continuous drain current at T_C = 100 °C, derived from its 43 W maximum power dissipation and 0.29 W/°C linear derating factor. This value reflects real thermal limits under sustained conduction and must be validated against actual heatsink performance and ambient conditions in the target IRF9510 application.

Does IRF9510 have a built-in body diode, and what are its key parameters?

Yes, the IRF9510 integrates a monolithic p-n junction body diode with V_SD = -5.5 V at I_S = -4.0 A and T_J = 25 °C, t_rr = 82–160 ns, and Q_rr = 0.15–0.30 μC. These values are measured under defined conditions (IF = -4.0 A, dI/dt = 100 A/μs) and directly impact synchronous rectification efficiency and shoot-through risk in bridge configurations using IRF9510.

Is IRF9510 compatible with logic-level gate drive?

No, the IRF9510 is not a logic-level MOSFET. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and it requires -10 V V_GS to achieve R_DS(on) = 1.2 Ω. Driving IRF9510 from 3.3 V or 5 V logic sources will result in incomplete turn-on and excessive conduction loss - a dedicated negative gate driver or level-shifting circuit is required for proper IRF9510 operation.

What is the thermal resistance from junction to case (R_thJC) for IRF9510?

The IRF9510 has a maximum junction-to-case thermal resistance (R_thJC) of 3.5 °C/W, measured from die junction to the TO-220AB metal tab. This parameter is critical for heatsink sizing and must be combined with R_thCS (0.50 °C/W) and R_thSA to calculate total thermal path resistance in any IRF9510 thermal management design.

Can IRF9510 be paralleled with other devices, and what design considerations apply?

Yes, the IRF9510 is designed for ease of paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥10 Ω) to damp oscillation. These practices ensure stable, balanced current distribution across multiple IRF9510 units in high-current applications.

IRF9510 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9510 FAQ

1.How can I place an order for IRF9510 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9510 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9510 reliable?

The price and inventory of IRF9510 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9510 is usually 5 days.

3.What payment methods are accepted for IRF9510?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9510 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9510?

IRF9510 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9510 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9510?

For technical support, including IRF9510 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9510 requirements.

6.How does Aetrix verify that IRF9510 is sourced from the original manufacturer or authorized distributors?

All IRF9510 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9510 meets industry standards.

7.What is the process for return or replacement of IRF9510?

All IRF9510 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9510, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9510 part is unused and in its original packaging.

Return procedure for IRF9510:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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