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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9510S

Name: IRF9510S
Brand: Vishay Siliconix
SKU: IRF9510S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9510S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9510S.pdf

Description:: MOSFET P-CH 100V 4A D2PAK

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Product details

Overview

IRF9510S from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -100 V V_DS, 4.0 A continuous drain current at T_C = 25 °C, 1.2 Ω R_DS(on) at V_GS = -10 V, and 175 °C maximum junction temperature. It serves as a high-side switch in DC-DC converters, motor control H-bridges, and load switching circuits requiring rugged avalanche capability and fast switching.

For engineers reviewing the IRF9510S datasheet, IRF9510S pinout, IRF9510S application, or IRF9510S equivalent, key selection criteria include its -100 V blocking voltage, repetitive avalanche rating (E_AS = 200 mJ), low gate charge (Q_g = 8.7 nC), surface-mount D2PAK thermal performance (R_thJC = 3.5 °C/W), and body diode recovery characteristics (t_rr = 82–160 ns).

Technical Context

This device employs a third-generation silicon process optimized for low R_DS(on) and fast switching in high-voltage P-channel configurations. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard logic-level drive while maintaining noise immunity.

The D2PAK package enables high-power dissipation (43 W at T_C = 25 °C) via low thermal resistance to case (3.5 °C/W) and integrates an intrinsic body diode with controlled reverse recovery (Q_rr = 0.15–0.30 μC) suitable for synchronous rectification and inductive load commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports high-side switching in 48 V industrial bus and 100 V DC link applications without derating.
R_DS(on) @ V_GS = -10 V	1.2 Ω - Limits conduction loss to ≤ 19.2 mW at 4 A, enabling thermally constrained PCB-mount designs.
Q_g	8.7 nC - Enables <100 ns turn-on delay with 24 Ω gate resistor, supporting >100 kHz PWM operation.
E_AS	200 mJ - Withstands unclamped inductive energy spikes in motor drive freewheeling without external snubbers.
t_r/t_f	27 ns / 17 ns - Reduces switching losses in hard-switched topologies and improves EMI profile vs. slower alternatives.
T_J max	+175 °C - Allows operation in sealed enclosures or high-ambient environments without forced cooling.
I_D @ T_C = 100 °C	-2.8 A - Specifies usable current in thermally limited heatsinkless layouts (e.g., 1" FR-4 PCB mount).

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (Drain, Gate, Source); 14.61–15.88 mm height; 9.65–10.67 mm width; 8.38–9.65 mm length.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab electrically connected to drain; must be soldered to large copper pour for thermal management and low-inductance return path.
Gate	Control input	High-impedance MOS gate requiring ≤ ±20 V drive; sensitive to ESD; requires series resistor (24 Ω typical) to damp ringing.
Source	Reference node / current return	Common reference for gate drive and load return; connects to system ground or floating rail in high-side configuration.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without level-shifting circuitry in buck regulators and battery disconnects.
Repetitive avalanche rated	Supports robust operation under transient overvoltage and inductive kickback without failure accumulation.
Dynamic dV/dt rating (-5.5 V/ns)	Prevents false turn-on during fast voltage transients in noisy motor drive or SMPS environments.
Fast body diode (t_rr = 82–160 ns)	Reduces reverse recovery losses and EMI in freewheeling paths of half-bridge and synchronous rectifier topologies.
RoHS-compliant, Pb-free	Meets global environmental compliance requirements for industrial and automotive electronics manufacturing.

Applications

Industrial Motor Control	DC-DC Converter High-Side Switch
Use Scenario: H-bridge driver for 24–48 V brushed DC motors in PLC I/O modules and automated valves. IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor voltage polarity and enabling regenerative braking via body diode conduction. Use Value: Avalanche rating absorbs inductive flyback energy during PWM dead-time transitions; 175 °C rating supports sealed enclosure operation.	Use Scenario: Synchronous buck converter in telecom power supply delivering 3.3 V/10 A from 12 V input. IC Role / Device Role / Timing Role: High-side switch operating at 250 kHz with gate drive referenced to switching node; body diode conducts during low-side on-time. Use Value: Low Q_g (8.7 nC) minimizes gate drive loss; fast t_r/t_f reduces overlap conduction loss in synchronous rectification.
Automotive Load Disconnect	Power Supply OR-ing Circuit
Use Scenario: Battery isolation switch in 12 V vehicle subsystems (e.g., infotainment backup power path). IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch activated by microcontroller GPIO; blocks reverse current during battery replacement. Use Value: -100 V V_DS withstands load dump transients up to ISO 7637-2 Pulse 5a; -55 to +175 °C rating meets AEC-Q101 ambient requirements.	Use Scenario: Dual-input redundant power supply where two 24 V sources feed common rail via ideal diode control. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active OR-ing element with gate driven by dedicated controller to emulate low-loss diode. Use Value: R_DS(on) = 1.2 Ω yields <12 mV forward drop at 100 mA, outperforming Schottky diodes in efficiency and thermal footprint.

Industrial Motor Control

DC-DC Converter High-Side Switch

Use Scenario: H-bridge driver for 24–48 V brushed DC motors in PLC I/O modules and automated valves.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor voltage polarity and enabling regenerative braking via body diode conduction.

Use Value: Avalanche rating absorbs inductive flyback energy during PWM dead-time transitions; 175 °C rating supports sealed enclosure operation.

Use Scenario: Synchronous buck converter in telecom power supply delivering 3.3 V/10 A from 12 V input.

IC Role / Device Role / Timing Role: High-side switch operating at 250 kHz with gate drive referenced to switching node; body diode conducts during low-side on-time.

Use Value: Low Q_g (8.7 nC) minimizes gate drive loss; fast t_r/t_f reduces overlap conduction loss in synchronous rectification.

Automotive Load Disconnect

Power Supply OR-ing Circuit

Use Scenario: Battery isolation switch in 12 V vehicle subsystems (e.g., infotainment backup power path).

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch activated by microcontroller GPIO; blocks reverse current during battery replacement.

Use Value: -100 V V_DS withstands load dump transients up to ISO 7637-2 Pulse 5a; -55 to +175 °C rating meets AEC-Q101 ambient requirements.

Use Scenario: Dual-input redundant power supply where two 24 V sources feed common rail via ideal diode control.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as active OR-ing element with gate driven by dedicated controller to emulate low-loss diode.

Use Value: R_DS(on) = 1.2 Ω yields <12 mV forward drop at 100 mA, outperforming Schottky diodes in efficiency and thermal footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	V_DS = -100 V, R_DS(on) = 0.3 Ω @ V_GS = -10 V, Q_g = 73 nC, TO-220 package	Higher current (12 A), but larger footprint and higher gate drive demand; unsuitable for space-constrained SMT layouts.	Select when higher current and lower R_DS(on) outweigh SMT assembly and thermal interface constraints.
SiHF9510S-GE3	Identical die and specs; same D2PAK package; RoHS-compliant, halogen-free variant per Vishay ordering matrix	No functional difference; differs only in material compliance and tape/reel packaging (GE3 = green, Pb-free, halogen-free)	Choose SiHF9510S-GE3 for full RoHS/halogen-free compliance; IRF9510STRRPbF is Pb-free but not halogen-free.

Compared with IRF9510S, IRF9530NPbF offers lower on-resistance but demands significantly more gate drive energy and occupies a through-hole footprint, while SiHF9510S-GE3 delivers identical electrical performance with enhanced environmental compliance-making it the preferred drop-in alternative for green manufacturing programs.

Availability

IRF9510S is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter high-side switching, and automotive load disconnect applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF9510S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRF9510S belongs to Vishay's third-generation power MOSFET family engineered for fast switching, low on-resistance, and repetitive avalanche capability in industrial and automotive power conversion systems.

FAQ

What is the maximum continuous drain current rating for the IRF9510S at 100 °C case temperature?

The IRF9510S supports -2.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package under real-world PCB-mount conditions and must be verified against actual board layout and ambient airflow in the final design. The IRF9510S maintains safe operation within this limit without requiring external heatsinking in many industrial applications.

Does the IRF9510S have a built-in body diode, and what are its key recovery parameters?

Yes, the IRF9510S integrates a source-drain body diode with t_rr = 82–160 ns and Q_rr = 0.15–0.30 μC at T_J = 25 °C, I_F = -4.0 A, and dI/dt = 100 A/μs. These values enable predictable freewheeling behavior in half-bridge and buck converter topologies. The IRF9510S body diode is not optimized for ultra-fast recovery but provides robust performance in standard switching applications without external diode supplementation.

Is the IRF9510S suitable for avalanche energy handling, and what is its single-pulse rating?

The IRF9510S is explicitly rated for repetitive avalanche operation with a single-pulse avalanche energy (E_AS) of 200 mJ under defined test conditions (V_DD = -25 V, I_AS = -4.0 A, L = 18 mH). This capability allows the IRF9510S to safely absorb inductive energy during switching transients without degradation, making it appropriate for motor drive and relay driving where unclamped inductive loads are present. The IRF9510S datasheet confirms this rating across its full temperature range.

What is the gate threshold voltage range for the IRF9510S, and how does it affect drive requirements?

The IRF9510S has a gate threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA, ensuring reliable turn-on with standard -10 V gate drive while maintaining noise margin against spurious turn-on. This threshold range means the IRF9510S is not a logic-level device and requires dedicated negative bias or level-shifted drive in high-side configurations. The IRF9510S achieves full enhancement and minimal R_DS(on) only at V_GS ≤ -10 V.

How does the thermal resistance of the IRF9510S compare between case-to-ambient and case-to-junction measurements?

The IRF9510S specifies R_thJC = 3.5 °C/W (junction-to-case) and R_thJA = 40 °C/W (junction-to-ambient, PCB mount), confirming that effective heat transfer relies on proper thermal interface to the PCB copper pour. The 11.4× difference highlights that the IRF9510S's thermal performance is dominated by the PCB layout-not the package itself. For optimal results, the IRF9510S drain tab must be soldered to ≥1"² of 2 oz copper with thermal vias, as validated in Vishay's application notes for D2PAK mounting.

IRF9510S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9510S FAQ

1.How can I place an order for IRF9510S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9510S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9510S reliable?

The price and inventory of IRF9510S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9510S is usually 5 days.

3.What payment methods are accepted for IRF9510S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9510S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9510S?

IRF9510S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9510S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9510S?

For technical support, including IRF9510S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9510S requirements.

6.How does Aetrix verify that IRF9510S is sourced from the original manufacturer or authorized distributors?

All IRF9510S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9510S meets industry standards.

7.What is the process for return or replacement of IRF9510S?

All IRF9510S units undergo pre-shipment inspection (PSI). If there is an issue with IRF9510S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9510S part is unused and in its original packaging.

Return procedure for IRF9510S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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