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Vishay Siliconix IRF9510SPBF
- Part No.:
- IRF9510SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9510SPBF.pdf
- Description:
- MOSFET P-CH 100V 4A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:946
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Product details
Overview
IRF9510SPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -100 V drain-source voltage, 1.2 Ω on-resistance at VGS = -10 V, and -4.0 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and high-temperature operation up to 175 °C, making it suitable for DC-DC converter high-side switches and motor control H-bridge legs.
For engineers reviewing the IRF9510SPBF datasheet, IRF9510SPBF pinout, IRF9510SPBF application, or IRF9510SPBF equivalent, key selection considerations include its -100 V blocking capability, low gate charge (8.7 nC), ruggedized avalanche rating, thermal performance under PCB-mount conditions, and compatibility with standard surface-mount reflow profiles.
Technical Context
This device operates as a normally-off P-channel switch requiring negative gate drive relative to source. Its dynamic dV/dt rating (-5.5 V/ns) and body diode recovery time (82–160 ns) are specified under controlled test conditions with dI/dt ≤ 75 A/μs and VDD ≤ VDS.
The MOSFET features a HEX-4 die in D2PAK packaging, delivering low RDS(on) and high power density (43 W at TC = 25 °C). Thermal resistance is 3.5 °C/W junction-to-case and 40 °C/W junction-to-ambient (PCB mount), enabling robust thermal management in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Maximum reverse-blocking voltage before breakdown; defines high-side switch capability in 48 V and 100 V bus systems. |
| RDS(on) | 1.2 Ω @ VGS = -10 V - Conduction loss of ~19.2 mW at -4 A; determines I²R heating in steady-state operation. |
| Qg | 8.7 nC - Total gate charge required for full turn-on; impacts driver strength requirement and switching loss at 100 kHz+ frequencies. |
| ID (cont.) | -4.0 A @ TC = 25 °C - Continuous current rating under heatsinked conditions; derates to -2.8 A at 100 °C case temperature. |
| EAS | 200 mJ - Single-pulse avalanche energy; enables safe operation during inductive load turn-off without external snubbers. |
| TJ Range | -55 to +175 °C - Extended junction temperature range supports industrial and automotive under-hood environments. |
| dV/dt Rating | -5.5 V/ns - Peak diode recovery dV/dt immunity; critical for reliability in hard-switched inductive circuits. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Dimensions per JEDEC TO-263AB: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), 3-pin configuration (Drain, Gate, Source).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to positive rail in high-side P-channel configurations. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOS gate requiring -10 V for full enhancement; sensitive to ESD and ringing. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad tied to internal die drain; primary thermal path to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| P-channel enhancement mode | Enables high-side switching without level-shifting circuitry when referenced to system ground. |
| Repetitive avalanche rated | Supports unclamped inductive switching events up to 4.3 mJ per pulse without degradation. |
| Dynamic dV/dt immunity | Withstands -5.5 V/ns transient voltage slew rates across drain-source during body diode commutation. |
| 175 °C maximum junction temperature | Permits operation in sealed enclosures or near heat sources where ambient exceeds 125 °C. |
| Low Qgd/Qg ratio (4.1/8.7 nC) | Reduces Miller-induced shoot-through risk in bridge configurations and improves gate drive efficiency. |
Applications
| DC-DC Buck Converter High-Side Switch | H-Bridge Motor Driver Upper Leg |
|---|---|
Use Scenario: Step-down conversion from 48 V battery to 12 V logic rail in industrial PLC modules. IC Role / Device Role / Timing Role: High-side P-channel switch controlling power delivery during PWM on-time; operates at 200 kHz with synchronous rectification. Use Value: Low RDS(on) minimizes conduction loss; avalanche rating absorbs inductive kickback from gate driver coupling. | Use Scenario: Bidirectional 24 V brushed DC motor control in automated valve actuators. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; commutated with dead-time control to prevent shoot-through. Use Value: Fast switching (10 ns td(on), 17 ns tf) enables precise speed regulation; rugged dV/dt rating prevents false turn-on during flyback transitions. |
| LED Constant-Current Driver | Hot-Swap Controller Back-End Switch |
Use Scenario: High-brightness LED string driver in outdoor signage with overvoltage protection. IC Role / Device Role / Timing Role: Series pass element regulating current via analog feedback loop; biased in linear region during dimming. Use Value: Stable VGS(th) (-2.0 to -4.0 V) ensures predictable turn-on threshold; low leakage (≤100 μA) maintains standby current below 10 μA. | Use Scenario: 48 V telecom board insertion into live backplane with inrush limiting. IC Role / Device Role / Timing Role: Main power switch placed between input fuse and downstream DC-DC converters; controlled by hot-swap controller IC. Use Value: -100 V rating accommodates 48 V + transients; 200 mJ single-pulse avalanche energy clamps surge events during connector mating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHF9510STRL-GE3 | Same die, lead-free/halogen-free; identical RDS(on), Qg, and avalanche specs; RoHS-compliant termination. | No functional difference; preferred for new designs requiring environmental compliance. | Select SiHF9510STRL-GE3 for RoHS-compliant production; IRF9510SPBF remains valid for legacy repair or Pb-containing assemblies. |
| IRF9530NPbF | Higher RDS(on) (0.3 Ω vs. 1.2 Ω), higher VDS (-100 V same), larger die size; not drop-in due to different thermal profile and gate charge (27 nC). | Lower conduction loss but slower switching; suited for lower-frequency (<50 kHz), higher-current applications. | Choose IRF9530NPbF only if lower RDS(on) justifies increased gate drive demand and layout revision. |
Compared with SiHF9510STRL-GE3, IRF9510SPBF offers identical electrical performance but with leaded terminations for solderability in high-reliability rework scenarios; versus IRF9530NPbF, IRF9510SPBF trades higher on-resistance for lower gate charge and faster switching-critical for high-frequency SMPS and motor control.
Availability
IRF9510SPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and hot-swap controllers requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from authorized channels.
Supply support for IRF9510SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.
The IRF9510SPBF belongs to Vishay's third-generation power MOSFET family designed for high-efficiency, high-temperature, and high-reliability power switching in industrial, telecom, and automotive subsystems.
FAQ
What is the maximum continuous drain current rating for IRF9510SPBF at 100 °C case temperature?
The IRF9510SPBF has a continuous drain current rating of -2.8 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained power dissipation; designers must ensure adequate PCB copper area and airflow to maintain case temperature within limits for reliable operation of the IRF9510SPBF.
Does IRF9510SPBF support avalanche operation, and what is its single-pulse energy rating?
Yes, the IRF9510SPBF is repetitively avalanche rated with a single-pulse avalanche energy (EAS) of 200 mJ under test conditions of VDD = -25 V, L = 18 mH, Rg = 25 Ω, and IAS = -4.0 A. This rating allows the IRF9510SPBF to safely absorb inductive energy during unclamped switching events without failure, reducing need for external snubber networks in relay or solenoid drive circuits.
What is the gate threshold voltage range for IRF9510SPBF, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for IRF9510SPBF is specified from -2.0 V to -4.0 V at ID = -250 μA. This relatively wide range means gate drive must reliably exceed -4.0 V (e.g., -10 V) to ensure full enhancement and low RDS(on); logic-level drivers outputting only -5 V may yield inconsistent conduction, so the IRF9510SPBF requires dedicated gate biasing for stable performance.
Can IRF9510SPBF be used in surface-mount reflow processes, and what is its peak soldering temperature rating?
Yes, the IRF9510SPBF is qualified for surface-mount reflow with a peak soldering temperature of 300 °C for 10 seconds, per JEDEC J-STD-020. Its D2PAK package is compatible with standard leaded reflow profiles; however, thermal mass of the exposed drain pad requires careful preheat and soak zone control to avoid voiding or delamination-verified process validation is recommended before high-volume deployment of the IRF9510SPBF.
How does the body diode performance of IRF9510SPBF impact its use in synchronous rectification or freewheeling applications?
The IRF9510SPBF integrates a fast body diode with reverse recovery time (trr) of 82–160 ns and reverse recovery charge (Qrr) of 0.15–0.30 μC at TJ = 25 °C. In freewheeling paths, this enables efficient current commutation with minimal voltage overshoot; however, for synchronous rectification, external Schottky diodes or actively driven N-channel MOSFETs are preferred due to the IRF9510SPBF's relatively high VSD (-5.5 V) and limited dI/dt capability.
IRF9510SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
IRF9510SPBF FAQ
1.How can I place an order for IRF9510SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9510SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9510SPBF reliable?
The price and inventory of IRF9510SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9510SPBF is usually 5 days.
3.What payment methods are accepted for IRF9510SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9510SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9510SPBF?
IRF9510SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9510SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9510SPBF?
For technical support, including IRF9510SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9510SPBF requirements.
6.How does Aetrix verify that IRF9510SPBF is sourced from the original manufacturer or authorized distributors?
All IRF9510SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9510SPBF meets industry standards.
7.What is the process for return or replacement of IRF9510SPBF?
All IRF9510SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9510SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9510SPBF part is unused and in its original packaging.
Return procedure for IRF9510SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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