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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9510STRR

Name: IRF9510STRR
Brand: Vishay Siliconix
SKU: IRF9510STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9510STRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9510STRR.pdf

Description:: MOSFET P-CH 100V 4A D2PAK

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Product details

Overview

IRF9510STRR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -100 V V_DS, 4.0 A continuous drain current at T_C = 25 °C, 1.2 Ω R_DS(on) at V_GS = -10 V, and 175 °C maximum junction temperature. It serves as a high-side load switch or reverse-polarity protection device in DC power distribution systems.

For engineers reviewing the IRF9510STRR datasheet, IRF9510STRR pinout, IRF9510STRR application, or IRF9510STRR equivalent, key selection criteria include its -100 V blocking capability, repetitive avalanche rating (E_AS = 200 mJ), fast switching performance (t_r = 27 ns), low gate charge (Q_g = 8.7 nC), and suitability for industrial power supplies and motor control H-bridge high-side drivers.

Technical Context

This device implements a planar vertical DMOS structure optimized for ruggedness and fast switching in high-voltage P-channel configurations. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard logic-level gate drivers while maintaining noise immunity.

The integrated body diode supports freewheeling in inductive loads, with t_rr = 82–160 ns and Q_rr = 0.15–0.30 μC at T_J = 25 °C. Thermal design is enabled by R_thJC = 3.5 °C/W and R_thJA = 40 °C/W (PCB mount), supporting operation up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports DC bus voltages up to 80 V with 20 % safety margin in industrial power rails
R_DS(on) @ V_GS = -10 V	1.2 Ω - Enables <1.9 W conduction loss at 4.0 A, suitable for thermally constrained PCB layouts
Q_g	8.7 nC - Allows efficient gate drive with low-power controllers; enables <100 ns total switching time
I_D (continuous, T_C = 25 °C)	-4.0 A - Rated for sustained load switching in 24–48 V systems with heatsink or copper pour
E_AS	200 mJ - Withstands unclamped inductive energy spikes without failure in relay or solenoid drive
t_r/t_f	27 ns / 17 ns - Minimizes switching losses in PWM frequencies up to 200 kHz
T_J max	+175 °C - Qualified for under-hood automotive auxiliary modules and industrial motor drives

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain thermal pad on bottom side; 3-pin configuration optimized for high-current PCB mounting and thermal dissipation via copper pour or heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Tab/Drain)	Drain (D)	Primary current path and thermal interface; electrically connected to metal tab for low-inductance, high-current routing
2 (Source)	Source (S)	Reference node for gate drive; connects to system ground or negative rail in high-side switch topology
3 (Gate)	Gate (G)	Control input requiring -10 V for full enhancement; sensitive to ESD (±20 V absolute max rating)

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for repeated unclamped inductive switching events (I_AR = -4.0 A, E_AR = 4.3 mJ), enabling robust operation without snubbers
Dynamic dV/dt rating	-5.5 V/ns - Resists false turn-on during high-slew-rate transients in noisy industrial environments
P-channel enhancement mode	Self-contained high-side switching: no bootstrap circuitry required for DC applications like battery disconnect or polarity protection
175 °C operating temperature	Validated operation up to +175 °C junction temperature supports placement near heat sources in compact power modules
Low gate charge (Q_g)	8.7 nC total gate charge reduces driver power consumption and simplifies gate resistor selection for controlled edge rates

Applications

Reverse Polarity Protection	DC Motor High-Side Control
Use Scenario: Prevents damage from incorrect battery connection in 24 V vehicle accessories and portable equipment. IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between battery positive and load input. Use Value: Eliminates need for series diode; achieves <0.5 V forward drop at 4 A versus >0.7 V for Schottky, improving efficiency and thermal margin.	Use Scenario: Controls power delivery to one leg of an H-bridge driving brushed DC motors in industrial actuators. IC Role / Device Role / Timing Role: High-side switch enabling bidirectional motor control with grounded low-side FETs. Use Value: Leverages -100 V rating and avalanche ruggedness to absorb back-EMF spikes during motor commutation without clamping diodes.
Industrial Power Supply OR-ing	Programmable Load Switch
Use Scenario: Enables redundant 48 V DC inputs in telecom power shelves using ideal diode behavior. IC Role / Device Role / Timing Role: Active OR-ing FET replacing Schottky diodes to reduce conduction loss and heat generation. Use Value: R_DS(on) = 1.2 Ω yields <2 W loss at 4 A vs >3.5 W for 0.8 V diode, allowing higher density and fanless operation.	Use Scenario: Enables remote ON/OFF control of subsystems (e.g., sensors, radios) in programmable logic controllers. IC Role / Device Role / Timing Role: Controlled high-side power switch with fast turn-on/off for precise power sequencing. Use Value: 27 ns rise time and 17 ns fall time support microsecond-scale enable timing, critical for synchronized multi-rail startup.

Reverse Polarity Protection

DC Motor High-Side Control

Use Scenario: Prevents damage from incorrect battery connection in 24 V vehicle accessories and portable equipment.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between battery positive and load input.

Use Value: Eliminates need for series diode; achieves <0.5 V forward drop at 4 A versus >0.7 V for Schottky, improving efficiency and thermal margin.

Use Scenario: Controls power delivery to one leg of an H-bridge driving brushed DC motors in industrial actuators.

IC Role / Device Role / Timing Role: High-side switch enabling bidirectional motor control with grounded low-side FETs.

Use Value: Leverages -100 V rating and avalanche ruggedness to absorb back-EMF spikes during motor commutation without clamping diodes.

Industrial Power Supply OR-ing

Programmable Load Switch

Use Scenario: Enables redundant 48 V DC inputs in telecom power shelves using ideal diode behavior.

IC Role / Device Role / Timing Role: Active OR-ing FET replacing Schottky diodes to reduce conduction loss and heat generation.

Use Value: R_DS(on) = 1.2 Ω yields <2 W loss at 4 A vs >3.5 W for 0.8 V diode, allowing higher density and fanless operation.

Use Scenario: Enables remote ON/OFF control of subsystems (e.g., sensors, radios) in programmable logic controllers.

IC Role / Device Role / Timing Role: Controlled high-side power switch with fast turn-on/off for precise power sequencing.

Use Value: 27 ns rise time and 17 ns fall time support microsecond-scale enable timing, critical for synchronized multi-rail startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9510STRL-GE3	Same die, identical R_DS(on), Q_g, and avalanche specs; RoHS-compliant, halogen-free construction	No functional difference; preferred where Pb-free/halogen-free compliance is mandated	Select SiHF9510STRL-GE3 when environmental compliance (IEC 61249-2-21) is required; otherwise IRF9510STRR offers same electrical performance with Pb termination.
IRF9530NPbF	Higher V_DS (-100 V same), but lower R_DS(on) (0.3 Ω @ -10 V) and higher I_D (-12 A); larger D2PAK footprint not pin-compatible	Not drop-in: requires PCB layout change due to different thermal pad geometry and higher current routing needs	Choose IRF9530NPbF only when >4 A continuous current or <0.5 Ω R_DS(on) is essential; IRF9510STRR remains optimal for cost-sensitive 4 A designs with space constraints.

Compared with SiHF9510STRL-GE3, IRF9510STRR shares identical electrical behavior but uses Pb-containing terminations; compared with IRF9530NPbF, IRF9510STRR trades higher on-resistance for smaller die size, lower gate charge, and tighter thermal footprint-making it preferable for compact, moderate-power, cost-driven applications.

Availability

IRF9510STRR is available at Aetrix Electronics and suitable for industrial power supplies, motor control circuits, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF9510STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRF9510STRR belongs to Vishay's third-generation power MOSFET family, engineered for fast switching, low on-resistance, and repetitive avalanche capability in surface-mount industrial and automotive power systems.

FAQ

What is the maximum continuous drain current rating for IRF9510STRR at 100 °C case temperature?

The IRF9510STRR supports -2.8 A continuous drain current at T_C = 100 °C, derated linearly from -4.0 A at 25 °C using a factor of 0.29 W/°C. This reflects thermal limitations of the D2PAK package under typical PCB-mount conditions and must be verified against actual board layout and ambient airflow.

Does IRF9510STRR require a gate driver IC, or can it be driven directly from a microcontroller GPIO?

IRF9510STRR has a gate threshold voltage range of -2.0 V to -4.0 V and requires -10 V for full enhancement. Most 3.3 V or 5 V microcontroller GPIOs cannot sink sufficient voltage or current to reliably drive it; a dedicated P-channel gate driver (e.g., TC4427 configured for high-side) or level-shifting circuit is recommended to ensure fast, low-loss switching in the IRF9510STRR.

Is IRF9510STRR suitable for use in avalanche mode, and what is its single-pulse avalanche energy rating?

Yes, IRF9510STRR is explicitly repetitive avalanche rated. Its single-pulse avalanche energy (E_AS) is 200 mJ under test conditions of V_DD = -25 V, I_AS = -4.0 A, and L = 18 mH. This allows safe operation in inductive switching applications such as relay driving or solenoid control without external snubbers when pulse width and duty cycle remain within datasheet limits.

What is the thermal resistance from junction to case (R_thJC) for IRF9510STRR, and how does it impact heatsink selection?

The IRF9510STRR has a maximum junction-to-case thermal resistance (R_thJC) of 3.5 °C/W. This value assumes direct thermal contact between the D2PAK drain tab and a heatsink or copper pour. For a target T_J ≤ 125 °C at 4 A conduction, the total system thermal resistance (heatsink + interface) must be ≤ 21.2 °C/W when ambient is 50 °C-guiding minimum heatsink size and thermal interface material selection for the IRF9510STRR.

How does the body diode performance of IRF9510STRR compare to discrete Schottky diodes in freewheeling applications?

The IRF9510STRR body diode has V_SD = -5.5 V at -4.0 A and T_J = 25 °C, significantly higher forward voltage than Schottky diodes (<0.5 V). However, its reverse recovery time (t_rr = 82–160 ns) and charge (Q_rr = 0.15–0.30 μC) are well-characterized and predictable-making it suitable for synchronous rectification or controlled freewheeling where timing precision matters more than ultra-low loss, unlike the IRF9510STRR's primary role as a switch rather than a diode replacement.

IRF9510STRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9510STRR FAQ

1.How can I place an order for IRF9510STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9510STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9510STRR reliable?

The price and inventory of IRF9510STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9510STRR is usually 5 days.

3.What payment methods are accepted for IRF9510STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9510STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9510STRR?

IRF9510STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9510STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9510STRR?

For technical support, including IRF9510STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9510STRR requirements.

6.How does Aetrix verify that IRF9510STRR is sourced from the original manufacturer or authorized distributors?

All IRF9510STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9510STRR meets industry standards.

7.What is the process for return or replacement of IRF9510STRR?

All IRF9510STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF9510STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9510STRR part is unused and in its original packaging.

Return procedure for IRF9510STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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