Vishay Siliconix IRF9520PBF-BE3

Overview

IRF9520PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -100 V V_DS, 6.8 A continuous drain current at 25 °C, and 0.60 Ω R_DS(on) at V_GS = -10 V. It operates up to 175 °C junction temperature and supports repetitive avalanche energy of 6.0 mJ, making it suitable for DC-DC converter high-side switches and motor control H-bridge legs.

For engineers reviewing the IRF9520PBF-BE3 datasheet, IRF9520PBF-BE3 pinout, IRF9520PBF-BE3 application, or IRF9520PBF-BE3 equivalent, key selection criteria include verified -100 V blocking capability, confirmed 0.60 Ω on-resistance at -10 V gate drive, documented 18 nC total gate charge, and validated TO-220AB thermal resistance (R_thJC = 2.5 °C/W).

Technical Context

This device uses a third-generation silicon process optimized for ruggedized switching and low conduction loss. Its P-channel topology enables high-side configuration without level-shifting circuitry, and its dynamic dv/dt rating (-5.5 V/ns) ensures robustness against parasitic turn-on in inductive loads.

The MOSFET integrates a fast-recovery body diode with 98–200 ns reverse recovery time and 0.33–0.66 μC Q_rr, supporting synchronous rectification and freewheeling in buck converters and half-bridge inverters where controlled diode conduction is required.

Key Specifications

Pinout & Package

IRF9520PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 2.5 °C/W) and mechanical compatibility with standard mounting hardware (6-32 or M3 screw, 1.1 N·m torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9520PBF-BE3, IRF9530PBF offers higher current capacity and lower conduction loss at the cost of increased gate charge (25 nC), while IXTP10P10T delivers superior R_DS(on) in a lower-profile TO-220FP variant-both require verification of thermal design due to higher power density.

Availability

IRF9520PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and overvoltage protection systems requiring stable component supply across extended production lifecycles.

Supply support for IRF9520PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedized performance.

The IRF9520PBF-BE3 belongs to Vishay's third-generation power MOSFET product line, engineered for high-efficiency switching in industrial power supplies, motor drives, and automotive subsystems where robustness and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for IRF9520PBF-BE3 at 100 °C case temperature?

The IRF9520PBF-BE3 has a continuous drain current rating of -4.8 A at T_C = 100 °C. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify heatsink sizing using R_thJC = 2.5 °C/W and ambient conditions to maintain this rating in actual systems.

Does IRF9520PBF-BE3 support logic-level gate drive?

The IRF9520PBF-BE3 has a gate-source threshold voltage range of -2.0 V to -4.0 V, enabling partial turn-on with 3.3 V or 5 V logic signals. However, full enhancement requires V_GS ≤ -10 V to achieve the specified 0.60 Ω R_DS(on). For reliable saturation, a dedicated gate driver or negative bias supply is recommended-especially in high-current or high-frequency applications where conduction loss must be minimized.

What is the body diode reverse recovery time (t_rr) specification for IRF9520PBF-BE3?

The IRF9520PBF-BE3 body diode reverse recovery time is specified as 98–200 ns at T_J = 25 °C, I_F = -6.8 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses and EMI in freewheeling paths. The relatively fast t_rr supports efficient operation in 100–500 kHz DC-DC topologies, though synchronous rectification may still require external control to avoid cross-conduction.

Is IRF9520PBF-BE3 suitable for avalanche energy handling in inductive load switching?

Yes, the IRF9520PBF-BE3 is explicitly rated for repetitive avalanche operation with I_AR = -6.8 A and E_AR = 6.0 mJ. Its single-pulse avalanche energy rating is 300 mJ. These specifications confirm suitability for inductive load switching-such as relay drivers or solenoid controls-where unclamped inductive energy must be absorbed internally without external protection components.

How does the TO-220AB package of IRF9520PBF-BE3 affect thermal design?

The TO-220AB package of IRF9520PBF-BE3 provides R_thJC = 2.5 °C/W (junction-to-case) and R_thJA = 62 °C/W (junction-to-ambient, no heatsink). Effective thermal design requires mounting the drain-tab to a heatsink using thermal grease and an insulating washer if needed. With a 10 °C/W heatsink, IRF9520PBF-BE3 can dissipate ~40 W continuously at 25 °C ambient-well within its 60 W P_D rating at T_C = 25 °C.