Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9520S

Name: IRF9520S
Brand: Vishay Siliconix
SKU: IRF9520S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF9520S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9520S.pdf

Description:: MOSFET P-CH 100V 6.8A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,389

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF9520S from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -100 V V_DS, 6.8 A continuous drain current at T_C = 25 °C, and 0.60 Ω R_DS(on) at V_GS = -10 V. It delivers fast switching, repetitive avalanche capability, and operates up to +175 °C junction temperature-used in high-side DC-DC converter switches and motor control H-bridge upper arms.

For engineers reviewing the IRF9520S datasheet, IRF9520S pinout, IRF9520S application, or IRF9520S equivalent, key selection criteria include its -100 V blocking rating, -4.0 V maximum gate threshold voltage, 18 nC total gate charge, 60 W maximum power dissipation at T_C = 25 °C, and suitability for industrial power supplies and battery-powered load switching.

Technical Context

This device uses planar vertical DMOS technology optimized for ruggedness and low conduction loss. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its 2.5 °C/W junction-to-case thermal resistance supports high-power operation with minimal heatsinking when mounted on PCBs with adequate copper area.

The IRF9520S features integrated body diode with 98 ns typical reverse recovery time and -6.3 V forward voltage at -6.8 A, enabling synchronous rectification in buck converters. Its dynamic dV/dt rating of -5.5 V/ns ensures robust noise immunity during fast commutation in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports high-voltage DC bus applications up to 100 V reverse bias without breakdown.
R_DS(on) @ V_GS = -10 V	0.60 Ω - Enables <1.5 W conduction loss at 6.8 A, reducing thermal stress in compact layouts.
Q_g	18 nC - Determines gate drive power requirement; compatible with standard logic-level drivers (e.g., TC4427).
I_D (continuous, T_C = 25 °C)	-6.8 A - Sustains full-load current in 48 V telecom or industrial power systems with proper heatsinking.
E_AS	300 mJ - Withstands unclamped inductive energy spikes in motor drive freewheeling paths without failure.
T_J max	+175 °C - Allows operation in under-hood automotive or enclosed industrial enclosures without derating.
dV/dt rating	-5.5 V/ns - Resists false turn-on due to parasitic coupling in high-speed half-bridge configurations.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Drain, Gate, Source), lead (Pb)-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current output terminal / heat sink interface	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates >90% of device power.
Gate	Control input for channel conduction	Requires negative V_GS (≤ -2.0 V) to turn on; 18 nC Q_g dictates RC time constant for switching speed control.
Source	Reference node for gate drive and current return path	Connected to system ground or floating rail; body diode anode; must be routed with low inductance for clean switching.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without bootstrap circuitry-reduces BOM count in DC-DC controllers.
Repetitive avalanche rated	Withstands 6.0 mJ per pulse indefinitely, critical for reliability in inductive load switching (e.g., solenoids, relays).
Dynamic dV/dt rating (-5.5 V/ns)	Prevents spurious turn-on in high-noise environments like motor drives or industrial PLC outputs.
175 °C operating temperature	Eliminates need for external thermal derating in sealed enclosures or high-ambient-temperature deployments.
Low R_DS(on) × Q_g figure-of-merit	10.8 Ω·nC - Balances conduction and switching losses for optimal efficiency in 20–200 kHz SMPS designs.

Applications

High-Side Load Switch	Battery Protection Circuit
Use Scenario: Controlling power delivery to downstream modules in 24–48 V industrial equipment with hot-swap capability. IC Role / Device Role / Timing Role: High-side switch managing main power rail; turned on/off via isolated gate driver. Use Value: Low 0.60 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 6 A loads, extending system uptime.	Use Scenario: Reverse-polarity and overcurrent protection in portable test instruments powered by Li-ion packs. IC Role / Device Role / Timing Role: P-channel MOSFET acting as ideal diode replacement in series with battery pack. Use Value: Integrated body diode with -6.3 V V_SD and 98 ns t_rr enables fast fault isolation and low-loss charging path control.
H-Bridge Motor Driver (Upper Arm)	DC-DC Buck Converter (High-Side Switch)
Use Scenario: Driving brushed DC motors in automated valves and HVAC actuators requiring bidirectional torque. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; synchronized with N-channel low-side FET. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM dead-time, eliminating need for external snubbers.	Use Scenario: Primary switching element in non-isolated 48 V to 12 V step-down converters for factory automation I/O modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by dedicated buck controller IC. Use Value: 18 nC Q_g allows efficient 100–200 kHz operation with <100 ns switching transitions, improving light-load efficiency.

High-Side Load Switch

Battery Protection Circuit

Use Scenario: Controlling power delivery to downstream modules in 24–48 V industrial equipment with hot-swap capability.

IC Role / Device Role / Timing Role: High-side switch managing main power rail; turned on/off via isolated gate driver.

Use Value: Low 0.60 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 6 A loads, extending system uptime.

Use Scenario: Reverse-polarity and overcurrent protection in portable test instruments powered by Li-ion packs.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as ideal diode replacement in series with battery pack.

Use Value: Integrated body diode with -6.3 V V_SD and 98 ns t_rr enables fast fault isolation and low-loss charging path control.

H-Bridge Motor Driver (Upper Arm)

DC-DC Buck Converter (High-Side Switch)

Use Scenario: Driving brushed DC motors in automated valves and HVAC actuators requiring bidirectional torque.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; synchronized with N-channel low-side FET.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM dead-time, eliminating need for external snubbers.

Use Scenario: Primary switching element in non-isolated 48 V to 12 V step-down converters for factory automation I/O modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by dedicated buck controller IC.

Use Value: 18 nC Q_g allows efficient 100–200 kHz operation with <100 ns switching transitions, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	V_DS = -100 V, R_DS(on) = 0.30 Ω @ V_GS = -10 V, Q_g = 35 nC, TO-220 package	Lower R_DS(on) but higher gate charge and through-hole mounting; requires larger PCB footprint and manual assembly.	Choose for lower conduction loss where board space and assembly method permit TO-220 use.
SiHF9520S-GE3	Identical electrical specs; same D2PAK package; RoHS-compliant, halogen-free construction	No functional difference; differs only in material compliance and marking-fully interchangeable in new designs.	Prefer for new designs requiring full RoHS/halogen-free certification without performance trade-off.

Compared with IRF9520S, IRF9530NPbF offers lower on-resistance but demands more gate drive energy and lacks surface-mount compatibility, while SiHF9520S-GE3 provides identical performance with enhanced environmental compliance-making it the preferred drop-in alternative for certified production.

Availability

IRF9520S is available at Aetrix Electronics and suitable for industrial motor control, battery management systems, and high-reliability DC-DC conversion requiring stable component supply across extended product lifecycles.

Supply support for IRF9520S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness and reliability.

The IRF9520S belongs to Vishay's third-generation power MOSFET family engineered for high-current, high-temperature industrial power switching-designed to replace older-generation devices with improved avalanche ruggedness and thermal performance.

FAQ

What is the maximum continuous drain current rating for IRF9520S at 100 °C case temperature?

The IRF9520S supports -4.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation. Designers must ensure adequate PCB copper area and airflow to maintain case temperature within limits for reliable long-term use of IRF9520S.

Does IRF9520S have a built-in body diode, and what are its key parameters?

Yes, IRF9520S integrates a body diode with V_SD = -6.3 V at -6.8 A and t_rr = 98 ns (typical) at T_J = 25 °C. The diode supports freewheeling current in inductive loads and enables synchronous rectification in buck topologies. Its Q_rr of 0.33–0.66 μC ensures low recovery loss during hard-switching transitions-critical for efficiency in IRF9520S-based power stages.

Can IRF9520S be used in avalanche mode, and what energy level is rated?

Yes, IRF9520S is explicitly rated for repetitive avalanche operation with E_AR = 6.0 mJ per pulse and single-pulse E_AS = 300 mJ. These values are validated per test conditions in Figure 12 and allow safe operation during inductive turn-off transients without external clamping. Designers must respect pulse width and duty cycle limits defined in Note "a" to avoid junction overheating in IRF9520S avalanche applications.

What is the gate threshold voltage range for IRF9520S, and how does it affect drive requirements?

The gate threshold voltage V_GS(th) for IRF9520S is specified from -2.0 V to -4.0 V at I_D = -250 μA. This wide range means gate drive must exceed -4.0 V to guarantee full enhancement across process and temperature extremes. For robust turn-on, -10 V is recommended-ensuring R_DS(on) remains ≤ 0.60 Ω. IRF9520S thus requires negative gate drive relative to source, unlike N-channel counterparts.

Is IRF9520S RoHS-compliant, and what does the 'PbF' suffix indicate?

The IRF9520S ordering variant IRF9520STRRPbF is lead (Pb)-free but not fully RoHS-compliant due to exemption allowances; the 'PbF' suffix denotes lead-free termination only. For full RoHS and halogen-free compliance, SiHF9520STRR-GE3 is the direct equivalent. Both share identical electrical and thermal specs-IRF9520S remains suitable for legacy designs where Pb-free finish is required but full RoHS certification is not mandated.

IRF9520S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9520S FAQ

1.How can I place an order for IRF9520S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9520S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9520S reliable?

The price and inventory of IRF9520S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9520S is usually 5 days.

3.What payment methods are accepted for IRF9520S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9520S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9520S?

IRF9520S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9520S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9520S?

For technical support, including IRF9520S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9520S requirements.

6.How does Aetrix verify that IRF9520S is sourced from the original manufacturer or authorized distributors?

All IRF9520S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9520S meets industry standards.

7.What is the process for return or replacement of IRF9520S?

All IRF9520S units undergo pre-shipment inspection (PSI). If there is an issue with IRF9520S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9520S part is unused and in its original packaging.

Return procedure for IRF9520S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …