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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9520SPBF

Name: IRF9520SPBF
Brand: Vishay Siliconix
SKU: IRF9520SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9520SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9520SPBF.pdf

Description:: MOSFET P-CH 100V 6.8A D2PAK

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Product details

Overview

IRF9520SPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -100 V V_DS, 0.60 Ω R_DS(on) at V_GS = -10 V, and -6.8 A continuous drain current at T_C = 25 °C. It serves as a high-side switch in DC-DC converters, motor control H-bridges, and industrial power supplies requiring ruggedized switching and repetitive avalanche capability.

For engineers reviewing the IRF9520SPBF datasheet, IRF9520SPBF pinout, IRF9520SPBF application, or IRF9520SPBF equivalent, key selection criteria include its -100 V blocking voltage, 175 °C maximum junction temperature, fast switching performance (t_d(on) = 9.6 ns), low gate charge (Q_g = 18 nC), and surface-mount D2PAK thermal robustness for high-current PCB-mounted designs.

Technical Context

This device operates as a voltage-controlled unidirectional switch with negative threshold voltage (-2.0 to -4.0 V), enabling direct drive from logic-level controllers when paired with level-shifting circuitry. Its dynamic dV/dt rating (-5.5 V/ns) and intrinsic body diode (V_SD = -6.3 V at -6.8 A) support reliable operation in inductive load switching and freewheeling paths.

The MOSFET features third-generation silicon design optimized for low on-resistance and fast turn-on/turn-off transitions. Its D2PAK package delivers 2.0 W typical power dissipation on FR-4 PCBs and 60 W at case temperature, supported by R_thJC = 2.5 °C/W and R_thJA = 40 °C/W (PCB mount).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports high-voltage DC bus isolation in industrial power systems up to 100 V reverse polarity.
R_DS(on) @ V_GS = -10 V	0.60 Ω - Enables <1.8 W conduction loss at -6.8 A, critical for thermal management in compact layouts.
Q_g	18 nC - Determines gate driver strength requirement; compatible with standard 1–2 A peak drivers.
I_D (continuous, T_C = 25 °C)	-6.8 A - Sustains steady-state load current without derating in heatsinked applications.
E_AS	300 mJ - Withstands single-pulse inductive energy in unclamped switching, reducing snubber complexity.
T_J max	+175 °C - Allows operation in harsh environments such as automotive under-hood or industrial motor drives.
dV/dt rating	-5.5 V/ns - Resists false triggering during high-slew-rate transients in noisy power stages.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Dimensions per JEDEC TO-263AB: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), 3-pin configuration (Drain, Gate, Source), thermal pad soldered to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path output	Exposed metal tab electrically connected to drain; must be thermally and electrically tied to PCB ground plane or high-voltage rail.
Gate	Control input terminal	Receives negative gate drive relative to source; requires <18 nC charge for full enhancement; sensitive to ESD.
Source	Reference node for gate drive and current return	Serves as common reference for V_GS; connects to load return or system ground in high-side configurations.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under transient overvoltage conditions without external clamping in motor commutation or inductive load switching.
Dynamic dV/dt rating	-5.5 V/ns tolerance prevents spurious turn-on during rapid voltage transients in high-frequency SMPS and Class-D amplifiers.
Fast switching (t_d(on)/t_f)	9.6 ns turn-on delay and 25 ns fall time reduce switching losses in 100–500 kHz power stages.
P-channel topology	Eliminates need for high-side gate driver ICs in low-frequency high-side switch applications, simplifying bias network design.
175 °C operating temperature	Supports extended lifetime in sealed enclosures or ambient temperatures up to +125 °C with appropriate derating.

Applications

DC-DC Buck Converter High-Side Switch	Industrial Motor Control H-Bridge
Use Scenario: Used as upper switch in non-synchronous buck regulators delivering 12–48 V output from 100 V DC bus. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch; conducts during PWM high phase and blocks during low phase. Use Value: -100 V V_DS rating ensures margin against bus transients; 0.60 Ω R_DS(on) limits conduction loss to <1.8 W at 6.8 A load.	Use Scenario: Integrated into half-bridge leg of brushed DC motor driver for factory automation equipment. IC Role / Device Role / Timing Role: High-side switch in complementary pair; handles bidirectional current flow with integrated body diode freewheeling. Use Value: Repetitive avalanche rating (EAR = 6.0 mJ) absorbs inductive kickback during PWM dead-time transitions.
Programmable Power Supply Output Stage	Overvoltage Protection Circuit
Use Scenario: Final pass element in linear-regulated lab-grade power supply with remote sensing and current limiting. IC Role / Device Role / Timing Role: Voltage-controlled series pass transistor; biased in linear region for precise output regulation. Use Value: Low gate charge (18 nC) enables stable closed-loop response with minimal phase lag; 175 °C T_J supports sustained 6.8 A operation under thermal stress.	Use Scenario: Crowbar-style protection switch triggered by comparator during >100 V input surge events. IC Role / Device Role / Timing Role: Fast-acting shunt switch activated by gate pulse to short faulted rail to ground. Use Value: Single-pulse avalanche energy rating (E_AS = 300 mJ) safely clamps 100 V × 3 A × 1 ms surges without failure.

DC-DC Buck Converter High-Side Switch

Industrial Motor Control H-Bridge

Use Scenario: Used as upper switch in non-synchronous buck regulators delivering 12–48 V output from 100 V DC bus.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch; conducts during PWM high phase and blocks during low phase.

Use Value: -100 V V_DS rating ensures margin against bus transients; 0.60 Ω R_DS(on) limits conduction loss to <1.8 W at 6.8 A load.

Use Scenario: Integrated into half-bridge leg of brushed DC motor driver for factory automation equipment.

IC Role / Device Role / Timing Role: High-side switch in complementary pair; handles bidirectional current flow with integrated body diode freewheeling.

Use Value: Repetitive avalanche rating (EAR = 6.0 mJ) absorbs inductive kickback during PWM dead-time transitions.

Programmable Power Supply Output Stage

Overvoltage Protection Circuit

Use Scenario: Final pass element in linear-regulated lab-grade power supply with remote sensing and current limiting.

IC Role / Device Role / Timing Role: Voltage-controlled series pass transistor; biased in linear region for precise output regulation.

Use Value: Low gate charge (18 nC) enables stable closed-loop response with minimal phase lag; 175 °C T_J supports sustained 6.8 A operation under thermal stress.

Use Scenario: Crowbar-style protection switch triggered by comparator during >100 V input surge events.

IC Role / Device Role / Timing Role: Fast-acting shunt switch activated by gate pulse to short faulted rail to ground.

Use Value: Single-pulse avalanche energy rating (E_AS = 300 mJ) safely clamps 100 V × 3 A × 1 ms surges without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPBF	V_DS = -100 V, R_DS(on) = 0.30 Ω @ -10 V, higher Q_g = 38 nC, TO-220 package	Lower on-resistance but larger footprint and inferior thermal resistance (R_thJC = 3.0 °C/W vs. 2.5 °C/W)	Preferred where lower conduction loss justifies through-hole mounting and added board space.
SiHF9520S-GE3	Identical electrical specs, RoHS-compliant lead-free/halogen-free finish, same D2PAK package	No functional difference; differs only in material compliance and termination plating	Select when lead-free manufacturing or environmental compliance (e.g., IPC-J-STD-609) is mandatory.

Compared with IRF9520SPBF, IRF9530NPBF offers lower R_DS(on) but requires more gate drive energy and sacrifices surface-mount flexibility, while SiHF9520S-GE3 provides identical performance with updated environmental compliance-making it a drop-in replacement where RoHS adherence is required.

Availability

IRF9520SPBF is available at Aetrix Electronics and suitable for industrial motor control, programmable power supplies, and DC-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF9520SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF9520SPBF belongs to Vishay's third-generation power MOSFET family, engineered for high-voltage, medium-current switching in industrial and automotive power systems where avalanche robustness and surface-mount thermal efficiency are critical.

FAQ

What is the maximum continuous drain current rating for IRF9520SPBF at 100 °C case temperature?

The IRF9520SPBF supports -4.8 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain this rating in real-world conditions. The IRF9520SPBF datasheet specifies linear derating beyond 25 °C at 0.40 W/°C.

Does IRF9520SPBF have an integrated body diode, and what are its key parameters?

Yes, the IRF9520SPBF includes an integral reverse p-n junction body diode. Key parameters include -6.8 A continuous source-drain current (I_S), -6.3 V forward voltage (V_SD) at -6.8 A and 25 °C, 98–200 ns reverse recovery time (t_rr), and 0.33–0.66 μC reverse recovery charge (Q_rr). These values enable reliable freewheeling in inductive loads without external diodes in many applications. The IRF9520SPBF body diode is rated for repetitive operation under specified dI/dt and V_DD conditions.

Can IRF9520SPBF be used in avalanche mode, and what energy level is rated?

Yes, the IRF9520SPBF is explicitly repetitive avalanche rated, with 6.0 mJ maximum repetitive avalanche energy (E_AR) and 300 mJ single-pulse avalanche energy (E_AS). These ratings are validated per test conditions in the datasheet (V_DD = -25 V, I_AS = -6.8 A, L = 9.7 mH). Operation in avalanche mode must respect pulse width and duty cycle limits to avoid exceeding T_J = 175 °C. The IRF9520SPBF is designed for such stress in motor drive and relay driving applications.

What is the gate threshold voltage range for IRF9520SPBF, and how does it affect drive requirements?

The IRF9520SPBF has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA. This negative threshold confirms its P-channel enhancement-mode behavior. Full enhancement requires V_GS ≤ -10 V to achieve R_DS(on) = 0.60 Ω. Logic-level compatibility is limited; driving from 3.3 V or 5 V microcontrollers requires level-shifting or dedicated gate drivers. The IRF9520SPBF gate leakage (±100 nA at ±20 V) remains negligible across industrial temperature ranges.

Is IRF9520SPBF RoHS-compliant, and what does the 'PbF' suffix indicate?

The 'PbF' suffix in IRF9520SPBF denotes lead-free termination, but the part is not fully RoHS-compliant due to intentional lead content in the die attach or internal structure, as clarified in Vishay's documentation. For RoHS-compliant alternatives, SiHF9520S-GE3 is recommended-it matches all electrical specifications and uses lead-free/halogen-free materials. The IRF9520SPBF remains suitable for legacy or non-RoHS-restricted applications where Pb-based terminations are permitted.

IRF9520SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9520SPBF FAQ

1.How can I place an order for IRF9520SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9520SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9520SPBF reliable?

The price and inventory of IRF9520SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9520SPBF is usually 5 days.

3.What payment methods are accepted for IRF9520SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9520SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9520SPBF?

IRF9520SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9520SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9520SPBF?

For technical support, including IRF9520SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9520SPBF requirements.

6.How does Aetrix verify that IRF9520SPBF is sourced from the original manufacturer or authorized distributors?

All IRF9520SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9520SPBF meets industry standards.

7.What is the process for return or replacement of IRF9520SPBF?

All IRF9520SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9520SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9520SPBF part is unused and in its original packaging.

Return procedure for IRF9520SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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