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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9520STRRPBF

Name: IRF9520STRRPBF
Brand: Vishay Siliconix
SKU: IRF9520STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9520STRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9520STRRPBF.pdf

Description:: MOSFET P-CH 100V 6.8A D2PAK

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Product details

Overview

IRF9520STRRPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -100 V drain-source voltage, 0.60 Ω R_DS(on) at V_GS = -10 V, and -6.8 A continuous drain current at T_C = 25 °C. It delivers ruggedized switching performance in high-side load switch and DC-DC converter applications requiring avalanche energy handling and fast dV/dt immunity.

For engineers reviewing the IRF9520STRRPBF datasheet, IRF9520STRRPBF pinout, IRF9520STRRPBF application, or IRF9520STRRPBF equivalent, this part supports design validation of high-voltage P-channel switching circuits where junction temperature up to +175 °C, repetitive avalanche rating (6.0 mJ), and low gate charge (18 nC) are critical selection criteria.

Technical Context

This MOSFET employs a third-generation silicon process optimized for low on-resistance and fast switching with controlled dV/dt behavior. Its P-channel architecture enables high-side configuration without level-shifting circuitry, and its D2PAK thermal design supports 60 W dissipation at T_C = 25 °C.

The device features a built-in body diode with 98–200 ns reverse recovery time and 0.33–0.66 µC Q_rr, enabling synchronous rectification in buck converters. Its ±20 V gate-source voltage rating and -4.0 V maximum V_GS(th) ensure robust turn-on control under industrial supply variations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports high-side switching in 48 V and 60 V bus systems with margin against transients.
R_DS(on) @ V_GS = -10 V	0.60 Ω - Enables <1.8 W conduction loss at -4.1 A, suitable for medium-power load switches.
Q_g (total)	18 nC - Low gate drive power requirement; compatible with standard logic-level gate drivers.
I_D (continuous, T_C = 25 °C)	-6.8 A - Sustains steady-state current in motor control H-bridge upper arms and battery protection circuits.
E_AS (single-pulse)	300 mJ - Withstands unclamped inductive switching events in relay drivers and solenoid controls.
T_J max	+175 °C - Allows operation in sealed enclosures or high-ambient environments without derating penalties.
dV/dt rating	-5.5 V/ns - Resists false triggering during fast-rising edge noise in automotive and industrial EMI-prone settings.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (Drain, Gate, Source) in standard lead frame layout.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current output path / heat sink interface	Electrically connected to PCB copper pour for thermal management; carries full load current and must be isolated from other potentials.
Gate	Control input for channel conduction	High-impedance terminal requiring <±100 nA leakage control; driven by logic-level or dedicated gate driver with ≤18 nC charge delivery.
Source	Reference node for gate drive and current return	Connected to system ground or positive rail in high-side configuration; defines V_GS reference and body diode cathode.

Key Features

Feature	Design Value
Repetitive avalanche rated	6.0 mJ per pulse - Enables reliable operation in inductive load switching without external snubbers.
Dynamic dV/dt immunity	-5.5 V/ns - Prevents spurious turn-on during high-slew-rate transients in motor drives and power supplies.
P-channel enhancement mode	V_GS(th) = -2.0 to -4.0 V - Simplifies high-side gate drive architecture by eliminating level shifters in 12–48 V systems.
Surface-mount D2PAK	R_thJC = 2.5 °C/W - Delivers 60 W power dissipation capability with minimal PCB area versus through-hole alternatives.
RoHS-compliant, halogen-free	SiHF9520S-GE3 / IRF9520STRRPBF variants - Meets IPC-J-STD-609A Class 1 moisture sensitivity and JEDEC JESD22-A113 qualification.

Applications

Industrial Motor Control	Telecom Power Supply
Use Scenario: High-side switch in half-bridge gate driver for 24 V brushed DC motors in PLC I/O modules. IC Role / Device Role / Timing Role: P-channel power switch controlling motor direction and braking via source-follower configuration. Use Value: -100 V V_DS rating absorbs back-EMF spikes; 175 °C T_J ensures reliability in fanless enclosures.	Use Scenario: OR-ing FET in redundant 48 V telecom rectifier outputs to prevent reverse current flow. IC Role / Device Role / Timing Role: Reverse-polarity blocking element with fast body diode recovery (98 ns) minimizing cross-conduction loss. Use Value: 0.60 Ω R_DS(on) reduces insertion loss below 0.3 W per FET at 2.5 A; D2PAK thermal performance sustains >50,000 hours MTBF.
Battery Management System	Automotive Lighting Control
Use Scenario: Load disconnect switch between Li-ion pack and DC-DC converter in EV auxiliary power units. IC Role / Device Role / Timing Role: High-side isolation switch activated during fault conditions or sleep mode. Use Value: Repetitive avalanche rating (6.0 mJ) handles inductive kickback from converter chokes; -55 to +175 °C range matches automotive under-hood requirements.	Use Scenario: Headlamp dimming switch in 12 V vehicle platforms using PWM-controlled P-channel topology. IC Role / Device Role / Timing Role: Low-frequency (<5 kHz) high-side switch modulating LED current via source-follower drive. Use Value: -4.0 V max V_GS(th) ensures full enhancement with 5 V microcontroller GPIO; 27 A pulsed ID supports surge testing per ISO 7637-2.

Industrial Motor Control

Telecom Power Supply

Use Scenario: High-side switch in half-bridge gate driver for 24 V brushed DC motors in PLC I/O modules.

IC Role / Device Role / Timing Role: P-channel power switch controlling motor direction and braking via source-follower configuration.

Use Value: -100 V V_DS rating absorbs back-EMF spikes; 175 °C T_J ensures reliability in fanless enclosures.

Use Scenario: OR-ing FET in redundant 48 V telecom rectifier outputs to prevent reverse current flow.

IC Role / Device Role / Timing Role: Reverse-polarity blocking element with fast body diode recovery (98 ns) minimizing cross-conduction loss.

Use Value: 0.60 Ω R_DS(on) reduces insertion loss below 0.3 W per FET at 2.5 A; D2PAK thermal performance sustains >50,000 hours MTBF.

Battery Management System

Automotive Lighting Control

Use Scenario: Load disconnect switch between Li-ion pack and DC-DC converter in EV auxiliary power units.

IC Role / Device Role / Timing Role: High-side isolation switch activated during fault conditions or sleep mode.

Use Value: Repetitive avalanche rating (6.0 mJ) handles inductive kickback from converter chokes; -55 to +175 °C range matches automotive under-hood requirements.

Use Scenario: Headlamp dimming switch in 12 V vehicle platforms using PWM-controlled P-channel topology.

IC Role / Device Role / Timing Role: Low-frequency (<5 kHz) high-side switch modulating LED current via source-follower drive.

Use Value: -4.0 V max V_GS(th) ensures full enhancement with 5 V microcontroller GPIO; 27 A pulsed ID supports surge testing per ISO 7637-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530PBF	V_DS = -100 V, R_DS(on) = 0.30 Ω @ -10 V, Q_g = 38 nC, TO-220 package	Lower on-resistance but higher gate charge and through-hole mounting; requires heatsink for >3 A operation.	Select when lower conduction loss outweighs PCB space and thermal constraints; not drop-in due to package and drive strength mismatch.
Si2301DDS-T1-GE3	V_DS = -20 V, R_DS(on) = 0.115 Ω @ -4.5 V, SOT-23 package, logic-level compatible	Lower voltage rating and smaller package limit use to sub-12 V portable electronics; unsuitable for 48 V systems.	Choose only for space-constrained, low-voltage (<15 V) load switching where D2PAK footprint is prohibitive.

Compared with IRF9520STRRPBF, IRF9530PBF offers lower R_DS(on) but demands more gate drive energy and board real estate, while Si2301DDS-T1-GE3 sacrifices voltage headroom and thermal capacity for miniaturization-neither is pin-compatible, and both require layout revision and drive circuit revalidation.

Availability

IRF9520STRRPBF is available at Aetrix Electronics and suitable for industrial motor control, telecom power OR-ing, and battery management systems requiring stable component supply, RoHS-compliant packaging, and long-term lifecycle support.

Supply support for IRF9520STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRF9520STRRPBF belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered for high-side switching in industrial power conversion, automotive subsystems, and telecom infrastructure where avalanche robustness and thermal stability are mandatory.

FAQ

What is the maximum continuous drain current for IRF9520STRRPBF at 100 °C case temperature?

The IRF9520STRRPBF supports -4.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations and ensures safe operation within the 175 °C maximum junction temperature. Designers must verify heatsinking and ambient conditions to maintain this current rating in actual IRF9520STRRPBF implementations.

Does IRF9520STRRPBF have a built-in body diode, and what are its key parameters?

Yes, IRF9520STRRPBF integrates a body diode with typical forward voltage of -6.3 V at -6.8 A and 25 °C, reverse recovery time of 98–200 ns, and reverse recovery charge of 0.33–0.66 µC. These values enable use in freewheeling paths of buck converters and flyback snubbers, though external Schottky diodes may be preferred for ultra-low-loss designs. The body diode characteristics are fully characterized in the IRF9520STRRPBF datasheet Section "Drain-Source Body Diode Characteristics".

Is IRF9520STRRPBF suitable for logic-level gate drive?

No, IRF9520STRRPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and it requires -10 V V_GS to achieve the specified 0.60 Ω R_DS(on). Driving it with 3.3 V or 5 V logic alone results in incomplete enhancement and excessive conduction loss. A dedicated gate driver or level-shifter is required for reliable IRF9520STRRPBF operation in most digital-control systems.

What is the thermal resistance from junction to case (R_thJC) for IRF9520STRRPBF?

The maximum junction-to-case (drain) thermal resistance for IRF9520STRRPBF is 2.5 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes proper soldering to a copper pad per Vishay's recommended minimum pads for D2PAK. Effective thermal design using this R_thJC enables IRF9520STRRPBF to dissipate up to 60 W at T_C = 25 °C, making it suitable for high-power density applications.

Can IRF9520STRRPBF replace IRF9520SPbF in an existing design?

Yes, IRF9520STRRPBF is the tape-and-reel version of the same die and package as IRF9520SPbF, with identical electrical specifications, thermal performance, and pinout. Both share the D2PAK (TO-263) outline and RoHS-compliant lead-free construction. No layout or schematic changes are needed when substituting IRF9520STRRPBF for IRF9520SPbF, provided the assembly process accommodates tape-and-reel handling.

IRF9520STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9520STRRPBF FAQ

1.How can I place an order for IRF9520STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9520STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9520STRRPBF reliable?

The price and inventory of IRF9520STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9520STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF9520STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9520STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9520STRRPBF?

IRF9520STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9520STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9520STRRPBF?

For technical support, including IRF9520STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9520STRRPBF requirements.

6.How does Aetrix verify that IRF9520STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9520STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9520STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF9520STRRPBF?

All IRF9520STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9520STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9520STRRPBF part is unused and in its original packaging.

Return procedure for IRF9520STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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