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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9530STRLPBF

Name: IRF9530STRLPBF
Brand: Vishay Siliconix
SKU: IRF9530STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9530STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9530STRLPBF.pdf

Description:: MOSFET P-CH 100V 12A D2PAK

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Product details

Overview

IRF9530STRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -100 V drain-source voltage, 0.30 Ω R_DS(on) at V_GS = -10 V, and -12 A continuous drain current at T_C = 25 °C. It delivers fast switching, repetitive avalanche capability, and 175 °C junction operation-ideal for high-side DC-DC converter switches and motor control H-bridge upper-leg drivers.

For engineers reviewing the IRF9530STRLPBF datasheet, IRF9530STRLPBF pinout, IRF9530STRLPBF application, or IRF9530STRLPBF equivalent, key selection criteria include its -100 V blocking rating, low gate charge (38 nC), ruggedized avalanche performance (400 mJ single-pulse), thermal resistance (R_thJC = 1.7 °C/W), and compatibility with standard D2PAK PCB footprints and reflow profiles.

Technical Context

This device operates as a high-voltage, high-current P-channel switch where gate drive polarity is inverted relative to N-channel counterparts-requiring negative V_GS for turn-on and compatible level-shifting or complementary driver circuitry. Its dynamic dV/dt rating (-5.5 V/ns) and body diode recovery time (120–240 ns) support reliable operation in inductive switching environments.

The IRF9530STRLPBF integrates a robust intrinsic body diode with V_SD = -6.3 V at -12 A and Q_rr = 0.46–0.92 μC, enabling synchronous rectification or freewheeling in buck converters and half-bridge topologies without external diodes. Its R_DS(on) exhibits a negative temperature coefficient, simplifying parallel operation under thermal stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum reverse-blocking voltage before avalanche onset; defines safe operating range in high-side switch configurations.
R_DS(on) @ V_GS = -10 V	0.30 Ω - On-resistance directly determines conduction loss (P_cond = I_D² × R_DS(on)) at rated current.
Q_g	38 nC - Total gate charge governs driver power requirement and switching speed; impacts gate drive IC selection and layout parasitics.
I_D (continuous, T_C = 25 °C)	-12 A - Continuous current capability under heatsink-cooled conditions; derates linearly to -8.2 A at 100 °C case temperature.
E_AS	400 mJ - Single-pulse avalanche energy rating ensures survivability during unclamped inductive turn-off events without external snubbers.
R_thJC	1.7 °C/W - Junction-to-case thermal resistance enables accurate heatsink sizing; supports up to 88 W dissipation with adequate thermal interface.
V_GS(th)	-2.0 to -4.0 V - Gate threshold voltage range confirms logic-level compatibility only with dedicated negative-bias gate drivers-not 0–5 V microcontroller outputs.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad on underside for thermal and electrical connection; 3-pin configuration (Drain, Gate, Source) with standard JEDEC outline and 1.78–2.79 mm lead length.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab/Exposed Pad)	Drain (D)	Primary high-current output terminal; electrically and thermally connected to PCB copper pour for heat dissipation and low-inductance return path.
Pin 2	Gate (G)	Control input requiring negative voltage relative to source to turn on; sensitive to ESD and ringing-requires gate resistor (12 Ω typical) and local decoupling.
Pin 3	Source (S)	Reference node for gate drive and load return; must be routed with low inductance to minimize switching overshoot and body diode commutation noise.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without bootstrap circuitry-simplifies power stage design in buck regulators and battery disconnect circuits.
Repetitive avalanche rated	Supports reliable operation under transient overvoltage and inductive kickback without derating or external clamping in industrial motor drives.
Dynamic dV/dt immunity (-5.5 V/ns)	Prevents false turn-on during rapid voltage transients across drain-source-critical for stable operation in noisy EMI environments.
175 °C maximum junction temperature	Allows extended operation in sealed enclosures or high-ambient industrial settings without thermal shutdown or parameter drift.
RoHS-compliant, halogen-free	Meets IPC-1752A material declaration requirements for automotive and medical OEM supply chains with full traceability.

Applications

DC-DC Buck Converter High-Side Switch	H-Bridge Motor Control (Upper Leg)
Use Scenario: Step-down voltage regulation in 24 V–48 V industrial power supplies using synchronous or asynchronous topology. IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing main power switch function; driven by dedicated gate driver with negative bias. Use Value: Eliminates need for bootstrap capacitor and high-side driver IC, reducing BOM count and layout complexity while maintaining -100 V input tolerance.	Use Scenario: Bidirectional brushed DC motor control in robotics and actuation systems with 36 V bus voltage. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration; synchronized with lower-leg N-channel device for PWM-controlled direction and torque. Use Value: Rugged avalanche rating absorbs inductive flyback energy during PWM dead-time transitions, preventing shoot-through and device failure.
Industrial Battery Disconnect Switch	Overvoltage Protection Circuit
Use Scenario: Solid-state replacement for mechanical relays in 48 V telecom or EV auxiliary battery management systems. IC Role / Device Role / Timing Role: Main isolation switch placed between battery pack and load; controlled via isolated gate driver for safety compliance. Use Value: Low R_DS(on) (0.30 Ω) minimizes voltage drop and self-heating during continuous 12 A operation, extending service life versus electromechanical alternatives.	Use Scenario: Clamping circuit protecting downstream 24 V loads from transient surges exceeding 36 V in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Active crowbar element triggered by comparator when input exceeds threshold; conducts fault current to ground. Use Value: 400 mJ single-pulse avalanche energy allows safe absorption of 100 V/10 ms transients without degradation-verified per Fig. 12c in datasheet.

DC-DC Buck Converter High-Side Switch

H-Bridge Motor Control (Upper Leg)

Use Scenario: Step-down voltage regulation in 24 V–48 V industrial power supplies using synchronous or asynchronous topology.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing main power switch function; driven by dedicated gate driver with negative bias.

Use Value: Eliminates need for bootstrap capacitor and high-side driver IC, reducing BOM count and layout complexity while maintaining -100 V input tolerance.

Use Scenario: Bidirectional brushed DC motor control in robotics and actuation systems with 36 V bus voltage.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration; synchronized with lower-leg N-channel device for PWM-controlled direction and torque.

Use Value: Rugged avalanche rating absorbs inductive flyback energy during PWM dead-time transitions, preventing shoot-through and device failure.

Industrial Battery Disconnect Switch

Overvoltage Protection Circuit

Use Scenario: Solid-state replacement for mechanical relays in 48 V telecom or EV auxiliary battery management systems.

IC Role / Device Role / Timing Role: Main isolation switch placed between battery pack and load; controlled via isolated gate driver for safety compliance.

Use Value: Low R_DS(on) (0.30 Ω) minimizes voltage drop and self-heating during continuous 12 A operation, extending service life versus electromechanical alternatives.

Use Scenario: Clamping circuit protecting downstream 24 V loads from transient surges exceeding 36 V in factory automation PLC I/O modules.

IC Role / Device Role / Timing Role: Active crowbar element triggered by comparator when input exceeds threshold; conducts fault current to ground.

Use Value: 400 mJ single-pulse avalanche energy allows safe absorption of 100 V/10 ms transients without degradation-verified per Fig. 12c in datasheet.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540STRLPBF	Higher R_DS(on) (0.20 Ω vs. 0.30 Ω at -10 V), higher Q_g (60 nC), same -100 V rating and D2PAK package.	Better conduction efficiency but slower switching; suited for lower-frequency (<100 kHz), higher-current applications where thermal margin dominates.	Select IRF9540STRLPBF if minimizing I²R losses is critical and gate drive strength permits higher Q_g.
SiHF9530STRL-GE3	Identical electrical specs and D2PAK footprint; differs only in RoHS/halogen-free compliance (lead-free terminations) and Vishay part numbering convention.	No functional difference; used interchangeably in new designs requiring full environmental compliance documentation.	Choose SiHF9530STRL-GE3 for automotive or medical programs requiring IPC-1752A-compliant material declarations.

Compared with IRF9530STRLPBF, IRF9540STRLPBF trades higher gate charge for lower on-resistance-favoring thermal-limited rather than switching-loss-limited designs-while SiHF9530STRL-GE3 offers identical performance with certified green materials, making it suitable for regulated markets without layout or driver changes.

Availability

IRF9530STRLPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and battery management systems requiring stable component supply, long-term lifecycle assurance, and full traceability from qualified Vishay wafer fabs.

Supply support for IRF9530STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRF9530STRLPBF belongs to Vishay's third-generation power MOSFET family, engineered for ruggedized high-voltage switching with optimized trade-offs among on-resistance, gate charge, and avalanche robustness in surface-mount packages.

FAQ

What is the maximum continuous drain current rating for IRF9530STRLPBF at 100 °C case temperature?

The IRF9530STRLPBF supports -8.2 A continuous drain current at T_C = 100 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated against actual board-level thermal resistance (R_thJA = 40 °C/W for PCB mount) and ambient conditions in the final application.

Does IRF9530STRLPBF require a negative gate drive voltage, and what is its threshold range?

Yes, IRF9530STRLPBF is a P-channel MOSFET requiring negative V_GS for turn-on. Its gate-source threshold voltage (V_GS(th)) ranges from -2.0 V to -4.0 V at I_D = -250 μA. Reliable enhancement-mode operation demands V_GS ≤ -10 V for full R_DS(on) specification, necessitating a dedicated negative-bias gate driver-not direct MCU GPIO connection.

Can IRF9530STRLPBF be used in avalanche mode, and what is its single-pulse energy rating?

Yes, IRF9530STRLPBF is explicitly rated for repetitive avalanche operation. Its single-pulse avalanche energy (E_AS) is 400 mJ under test conditions of V_DD = -25 V, I_AS = -12 A, and L = 4.2 mH (Fig. 12). This rating enables robust handling of inductive turn-off transients without external snubbers in motor or solenoid drive circuits.

What is the thermal resistance from junction to case (R_thJC) for IRF9530STRLPBF, and how does it impact heatsink design?

The IRF9530STRLPBF has a maximum junction-to-case thermal resistance (R_thJC) of 1.7 °C/W. This value enables precise heatsink sizing: for example, at 88 W maximum power dissipation and 25 °C case temperature, a 1.7 °C/W R_thJC implies a 149.6 °C junction rise-well within the 175 °C limit. Effective thermal interface material and copper area beneath the exposed drain pad are essential to realize this spec.

Is IRF9530STRLPBF pin-compatible with other D2PAK P-channel MOSFETs like IRF9540 or SiHF9530?

Yes, IRF9530STRLPBF shares the standard D2PAK (TO-263) 3-pin outline with IRF9540STRLPBF and SiHF9530STRL-GE3, including identical lead pitch (2.54 mm), body dimensions, and drain-tab layout. Mechanical fit and PCB footprint are fully interchangeable; however, electrical differences (e.g., R_DS(on), Q_g) require verification in the target switching frequency and thermal environment.

IRF9530STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 7.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9530STRLPBF FAQ

1.How can I place an order for IRF9530STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9530STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9530STRLPBF reliable?

The price and inventory of IRF9530STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9530STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF9530STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9530STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9530STRLPBF?

IRF9530STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9530STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9530STRLPBF?

For technical support, including IRF9530STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9530STRLPBF requirements.

6.How does Aetrix verify that IRF9530STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF9530STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9530STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF9530STRLPBF?

All IRF9530STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9530STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9530STRLPBF part is unused and in its original packaging.

Return procedure for IRF9530STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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