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Vishay Siliconix IRF9530STRRPBF
- Part No.:
- IRF9530STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9530STRRPBF.pdf
- Description:
- MOSFET P-CH 100V 12A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,862
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Product details
Overview
IRF9530STRRPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -100 V VDS, 0.30 Ω RDS(on) at VGS = -10 V, and -12 A continuous drain current at TC = 25 °C. It delivers ruggedized switching performance in high-side DC-DC converter and motor control applications requiring repetitive avalanche capability and fast dV/dt immunity.
For engineers reviewing the IRF9530STRRPBF datasheet, IRF9530STRRPBF pinout, IRF9530STRRPBF application, or IRF9530STRRPBF equivalent, key selection criteria include its -100 V blocking voltage, 38 nC total gate charge, 175 °C maximum junction temperature, surface-mount D2PAK thermal performance, and verified unclamped inductive switching robustness up to 400 mJ.
Technical Context
This device implements a third-generation trench-based P-channel MOSFET architecture optimized for low conduction loss and controlled switching transients. Its dynamic dV/dt rating of -5.5 V/ns and repetitive avalanche energy of 8.8 mJ support reliable operation in inductive load switching without external snubbers.
The D2PAK package enables high-power dissipation (88 W at TC = 25 °C) with low RthJC = 1.7 °C/W, while internal source/drain inductances (LS = 7.5 nH, LD = 4.5 nH) are characterized for accurate gate drive loop design and EMI prediction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Supports high-side switching in 48 V industrial bus and 100 V DC link systems |
| RDS(on) @ VGS = -10 V | 0.30 Ω - Enables ≤ 4.3 W conduction loss at -12 A, critical for thermally constrained PCB layouts |
| Qg | 38 nC - Determines gate driver current requirement (~3.2 A peak for 12 ns td(on) with 12 Ω Rg) |
| ID (continuous) | -12 A @ TC = 25 °C - Specifies maximum safe current under heatsink-cooled conditions |
| EAS | 400 mJ - Quantifies single-pulse avalanche energy handling without failure, validated per Fig. 12 |
| TJ max | +175 °C - Allows operation in under-hood automotive or sealed industrial enclosures |
| dV/dt rating | -5.5 V/ns - Confirmed immunity to parasitic turn-on in high-noise motor drive environments |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain thermal pad; 3-terminal configuration optimized for high-current PCB mounting and thermal transfer to copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output / heat sink interface | Connected to large copper area for thermal dissipation; electrically ties to exposed backside metal pad |
| Gate (G) | Control input for channel modulation | High-impedance node requiring <100 nA leakage budget; sensitive to layout-induced ringing due to 38 nC Qg |
| Source (S) | Reference node for gate drive and current return | Common connection point for load return path and gate driver ground; impacts body diode forward drop (VSD = -6.3 V) |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 8.8 mJ per pulse - Eliminates need for external clamping in relay/motor coil snubbing |
| Dynamic dV/dt immunity | -5.5 V/ns - Prevents false triggering in noisy 48 V battery systems with fast inductive transients |
| Fast switching | tr = 52 ns, tf = 39 ns - Reduces switching losses in 20–100 kHz SMPS designs |
| P-channel topology | High-side switch capability - Simplifies gate drive circuitry vs. N-channel high-side solutions requiring bootstrap or isolated supplies |
| 175 °C operating temperature | Extended thermal margin - Supports derated operation in sealed enclosures without active cooling |
Applications
| Industrial Motor Control | DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Driving brushed DC motors in programmable logic controller (PLC) I/O modules with 24–48 V supply rails. IC Role / Device Role / Timing Role: P-channel high-side switch controlling motor direction and braking via PWM duty cycle. Use Value: -100 V VDS withstands inductive kickback; 0.30 Ω RDS(on) limits I²R heating during 12 A stall current. |
Use Scenario: Synchronous buck converter in telecom power shelf delivering 12 V/10 A from 48 V input. IC Role / Device Role / Timing Role: High-side P-channel MOSFET in non-synchronous buck topology with external freewheeling diode. Use Value: 38 nC Qg enables efficient 100 kHz switching; 175 °C TJ supports operation near hot components on dense PCBs. |
| Power Supply OR-ing Circuit | Overvoltage Protection Switch |
|
Use Scenario: Dual-redundant 28 V aircraft power distribution with automatic failover between sources. IC Role / Device Role / Timing Role: Back-to-back P-channel MOSFET configured as ideal diode for reverse-current blocking. Use Value: -100 V rating provides 3× safety margin over 28 V nominal; -6.3 V VSD ensures low forward drop during conduction. |
Use Scenario: Input protection stage in medical-grade AC/DC adapter limiting surge to downstream regulators. IC Role / Device Role / Timing Role: Clamping switch triggered by overvoltage detection circuit to short excess energy to ground. Use Value: 400 mJ EAS absorbs 100 V/4 A transient for 1 ms without degradation; -5.5 V/ns dV/dt rating prevents spurious turn-on. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPbF | VDS = -100 V, RDS(on) = 0.20 Ω @ -10 V, Qg = 54 nC, TO-220 package | Lower on-resistance but higher gate charge and through-hole mounting | Preferred where lower conduction loss outweighs gate drive complexity and PCB space constraints |
| SiHF9530STRL-GE3 | Identical electrical specs, same D2PAK package, halogen-free and RoHS-compliant construction | No functional difference; differs only in material compliance and tape/reel packaging | Drop-in replacement when lead-free/halogen-free certification is required per IPC-J-STD-609 |
Compared with IRF9530STRRPBF, IRF9540NPbF offers lower RDS(on) but requires larger gate drive energy and through-hole assembly, while SiHF9530STRL-GE3 provides identical performance with enhanced environmental compliance-making it suitable for export-sensitive industrial designs.
Availability
IRF9530STRRPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter high-side switching, and overvoltage protection applications requiring stable component supply across extended production lifecycles.
Supply support for IRF9530STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.
The IRF9530STRRPBF belongs to Vishay's third-generation surface-mount power MOSFET family engineered for high-current, high-temperature industrial and automotive subsystems demanding repeatable avalanche robustness and low-profile packaging.
FAQ
What is the maximum continuous drain current rating for IRF9530STRRPBF at 100 °C case temperature?
The IRF9530STRRPBF supports -8.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be validated against actual board-level thermal resistance (RthJA = 40 °C/W for PCB mount).
Does IRF9530STRRPBF have an integrated body diode, and what are its key parameters?
Yes, IRF9530STRRPBF includes an integral reverse p-n junction body diode. Key parameters include -12 A continuous source-drain current (IS), -6.3 V forward voltage (VSD) at -12 A and 25 °C, and 120–240 ns reverse recovery time (trr) with 0.46–0.92 μC recovered charge (Qrr), enabling use in freewheeling and synchronous rectification roles.
Is IRF9530STRRPBF suitable for avalanche energy handling, and how is it tested?
Yes, IRF9530STRRPBF is repetitively avalanche rated with 8.8 mJ per pulse and single-pulse capability of 400 mJ. Testing follows the unclamped inductive switching (UIS) method per Figure 12: VDD = -25 V, L = 4.2 mH, IAS = -12 A, Rg = 25 Ω, confirming robustness under worst-case inductive turn-off conditions.
What is the gate threshold voltage range for IRF9530STRRPBF, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for IRF9530STRRPBF is -2.0 V to -4.0 V at ID = -250 μA. This range confirms standard-level drive compatibility: full enhancement requires ≥ -10 V gate drive, and logic-level controllers (e.g., 3.3 V or 5 V) cannot directly drive it without level-shifting circuitry.
How does the D2PAK package of IRF9530STRRPBF compare thermally to TO-220 alternatives?
The D2PAK package of IRF9530STRRPBF achieves RthJC = 1.7 °C/W and RthJA = 40 °C/W (PCB mount), outperforming typical TO-220 RthJA > 60 °C/W. Its exposed drain pad enables direct thermal coupling to inner-layer copper pours, supporting 88 W power dissipation at TC = 25 °C-critical for compact, fanless industrial power designs.
IRF9530STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF9530STRRPBF FAQ
1.How can I place an order for IRF9530STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9530STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9530STRRPBF reliable?
The price and inventory of IRF9530STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9530STRRPBF is usually 5 days.
3.What payment methods are accepted for IRF9530STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9530STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9530STRRPBF?
IRF9530STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9530STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9530STRRPBF?
For technical support, including IRF9530STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9530STRRPBF requirements.
6.How does Aetrix verify that IRF9530STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRF9530STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9530STRRPBF meets industry standards.
7.What is the process for return or replacement of IRF9530STRRPBF?
All IRF9530STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9530STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9530STRRPBF part is unused and in its original packaging.
Return procedure for IRF9530STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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