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Vishay Siliconix IRF9540STRLPBF
- Part No.:
- IRF9540STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9540STRLPBF.pdf
- Description:
- MOSFET P-CH 100V 19A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,592
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Product details
Overview
IRF9540STRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -100 V drain-source voltage, 0.20 Ω RDS(on) at VGS = -10 V, and -19 A continuous drain current at TC = 25 °C. It delivers fast switching, repetitive avalanche capability, and 175 °C junction operation for high-reliability DC-DC converter high-side switches and motor control H-bridge upper arms.
For engineers reviewing the IRF9540STRLPBF datasheet, IRF9540STRLPBF pinout, IRF9540STRLPBF application, or IRF9540STRLPBF equivalent, key selection criteria include verified -100 V blocking, low gate charge (61 nC), ruggedized avalanche rating (640 mJ single-pulse), thermal resistance (RthJC = 1.0 °C/W), and D2PAK mounting compatibility with high-current PCB layouts.
Technical Context
This device operates as a normally-off P-channel switch requiring negative gate drive relative to source. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures robust noise immunity while enabling logic-level compatibility with dedicated gate drivers. The integrated body diode supports synchronous rectification and freewheeling in buck converters and half-bridge topologies.
Designed for surface-mount high-power applications, the IRF9540STRLPBF features low internal connection resistance and optimized die-to-package thermal path. Its dynamic dV/dt rating (-5.5 V/ns) and 200 A/μs di/dt capability support stable operation under fast transient conditions without spurious turn-on.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Maximum reverse-blocking voltage before breakdown; defines safe operating range in high-side switch configurations. |
| RDS(on) | 0.20 Ω @ VGS = -10 V - On-resistance directly determines conduction loss and thermal rise at -11 A operating current. |
| Qg | 61 nC - Total gate charge dictates driver power requirement and switching speed in hard-switched topologies. |
| ID (cont.) | -19 A @ TC = 25 °C - Continuous current rating at case temperature; derates linearly to -13 A at 100 °C case. |
| EAS | 640 mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive load turn-off transients. |
| RthJC | 1.0 °C/W - Junction-to-case thermal resistance enables accurate heatsink sizing when mounted on copper pads. |
| VSD | -5.0 V @ IS = -19 A - Body diode forward voltage impacts freewheeling loss and reverse recovery behavior. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (G, S, D); lead (Pb)-free and halogen-free construction per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives negative gate drive signal; requires ≥20 V |VGS| rating and ≤±100 nA leakage for stable biasing. |
| Source (S) | Reference node | Common return path for load current; serves as gate drive reference in high-side configurations. |
| Drain (D) | Power output terminal | Connected to exposed metal tab; must be soldered to large copper area for thermal dissipation and low-inductance current path. |
Key Features
| Feature | Design Value |
|---|---|
| P-channel enhancement mode | Enables high-side switching without level-shifting circuitry when source is tied to positive rail. |
| Repetitive avalanche rated | Supports reliable operation under unclamped inductive switching (IAR = -19 A, EAR = 15 mJ) without degradation. |
| Dynamic dV/dt rating | -5.5 V/ns immunity prevents false turn-on during rapid voltage transients across drain-source. |
| 175 °C maximum junction temperature | Permits extended operation in thermally constrained industrial environments with minimal derating. |
| Low Qgd/Qg ratio | 29 nC / 61 nC = 47.5% - Reduces Miller effect and improves controllability during hard switching. |
Applications
| DC-DC Buck Converter High-Side Switch | H-Bridge Motor Control Upper Arm |
|---|---|
|
Use Scenario: Step-down voltage conversion in industrial power supplies where input exceeds 48 V and efficiency >92% is required. IC Role / Device Role / Timing Role: High-side synchronous switch controlling power delivery to output inductor; duty-cycle modulated at 100–500 kHz. Use Value: Low RDS(on) minimizes conduction loss; fast switching (tr = 73 ns) reduces transition loss; avalanche rating handles inductor flyback energy. |
Use Scenario: Bidirectional 24 V brushed DC motor drive in automated machinery with regenerative braking capability. IC Role / Device Role / Timing Role: Upper-arm P-channel switch in half-bridge leg; commutated with complementary N-channel lower arm. Use Value: Integrated body diode conducts reverse current during PWM off-time; -100 V rating accommodates back-EMF spikes up to ±80 V. |
| LED Driver Constant-Current Switch | Hot-Swap Controller Back-Drive Protection |
|
Use Scenario: High-brightness LED string control in outdoor signage with 72 V bus and thermal foldback protection. IC Role / Device Role / Timing Role: Series pass element regulating current via analog dimming or PWM; operated in linear or saturated mode. Use Value: 175 °C TJ rating supports sustained linear operation; low VSD reduces forward drop during PWM freewheeling. |
Use Scenario: 48 V telecom board insertion protection where back-drive from downstream capacitors must be blocked. IC Role / Device Role / Timing Role: Reverse-polarity and back-feed blocking FET placed between input connector and system rail. Use Value: P-channel topology allows simple gate control referenced to input; -100 V VDS withstands worst-case surge events per GR-1089. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | VDS = -100 V, RDS(on) = 0.30 Ω @ -10 V, Qg = 52 nC, same D2PAK package | Higher on-resistance increases conduction loss by ~50%; lower Qg eases gate drive but reduces switching speed margin | Select when cost sensitivity outweighs efficiency requirements and thermal headroom exists. |
| SiHF9540STRL-GE3 | Identical electrical specs; Vishay's RoHS-compliant, halogen-free variant with same D2PAK footprint and pinout | No functional difference; differs only in material compliance (lead-free terminations, halogen-free molding compound) | Choose for new designs requiring full RoHS/REACH compliance without layout or performance trade-offs. |
Compared with IRF9540STRLPBF, IRF9530NPBF trades higher conduction loss for slightly simpler drive, while SiHF9540STRL-GE3 offers identical performance with updated environmental compliance-making it a direct replacement for regulatory-driven redesigns.
Availability
IRF9540STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom hot-swap modules, LED lighting systems, and high-reliability DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for IRF9540STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for industrial, automotive, and computing markets.
The IRF9540STRLPBF belongs to Vishay's third-generation power MOSFET family, engineered for optimal balance of low RDS(on), fast switching, rugged avalanche performance, and surface-mount thermal efficiency in high-current applications.
FAQ
What is the maximum continuous drain current rating for IRF9540STRLPBF at 100 °C case temperature?
The IRF9540STRLPBF supports -13 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the D2PAK package and silicon die; operation above this current requires active cooling or reduced ambient conditions to maintain TJ ≤ 175 °C. The IRF9540STRLPBF datasheet specifies linear derating from 150 W at 25 °C to 3.7 W at 100 °C for PCB-mounted configurations.
Does IRF9540STRLPBF have a specified body diode reverse recovery time?
Yes, the IRF9540STRLPBF specifies trr = 130–260 ns at TJ = 25 °C, IF = -19 A, and dI/dt = 100 A/μs. This parameter is critical for snubberless operation in freewheeling paths and influences EMI generation during diode commutation. The IRF9540STRLPBF body diode also has Qrr = 0.35–0.70 nC, which affects switching loss in synchronous rectifier applications.
Can IRF9540STRLPBF be used in avalanche mode repeatedly?
Yes, the IRF9540STRLPBF is explicitly rated for repetitive avalanche operation with IAR = -19 A and EAR = 15 mJ per pulse, provided pulse width and duty cycle remain within limits defined by maximum junction temperature (see Figure 11). This capability makes the IRF9540STRLPBF suitable for inductive load switching without external clamping, unlike non-avalanche-rated MOSFETs.
What is the gate threshold voltage range for IRF9540STRLPBF?
The IRF9540STRLPBF has a gate threshold voltage VGS(th) range of -2.0 V to -4.0 V at ID = -250 μA, ensuring reliable turn-on with standard -10 V gate drive while maintaining noise immunity against spurious positive transients. This threshold window allows compatibility with both dedicated gate drivers and microcontroller outputs buffered through level-shifting circuits. The IRF9540STRLPBF remains fully enhanced well within this range.
Is IRF9540STRLPBF compatible with lead-free reflow soldering processes?
Yes, the IRF9540STRLPBF is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per its absolute maximum ratings. Its package construction and termination finish meet JEDEC J-STD-020 requirements. The IRF9540STRLPBF should be stored and handled per Vishay's moisture sensitivity level (MSL) guidance to prevent popcorning during reflow.
IRF9540STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 61 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRF9540STRLPBF FAQ
1.How can I place an order for IRF9540STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9540STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9540STRLPBF reliable?
The price and inventory of IRF9540STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9540STRLPBF is usually 5 days.
3.What payment methods are accepted for IRF9540STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9540STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9540STRLPBF?
IRF9540STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9540STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9540STRLPBF?
For technical support, including IRF9540STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9540STRLPBF requirements.
6.How does Aetrix verify that IRF9540STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRF9540STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9540STRLPBF meets industry standards.
7.What is the process for return or replacement of IRF9540STRLPBF?
All IRF9540STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9540STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9540STRLPBF part is unused and in its original packaging.
Return procedure for IRF9540STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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