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Vishay Siliconix IRF9610PBF-BE3
- Part No.:
- IRF9610PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF9610PBF-BE3.pdf
- Description:
- MOSFET P-CH 200V 1.8A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:996
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Product details
Overview
IRF9610PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -200 V drain-source voltage, 3.0 Ω RDS(on) at VGS = -10 V, and -1.8 A continuous drain current at TC = 25 °C. It serves as a high-voltage, low-current switching element in DC-DC converters, relay drivers, and load-switching circuits.
For engineers reviewing the IRF9610PBF-BE3 datasheet, IRF9610PBF-BE3 pinout, IRF9610PBF-BE3 application, or IRF9610PBF-BE3 equivalent, key selection criteria include its negative threshold voltage (-2.0 to -4.0 V), low gate charge (11 nC total), rugged avalanche rating (-5.0 V/ns dV/dt), and RoHS-compliant/halogen-free construction per ordering code BE3.
Technical Context
This device uses planar vertical DMOS technology optimized for high-voltage blocking and moderate conduction efficiency. Its -200 V VDS rating and -4.0 V maximum VGS(th) enable reliable gate drive with standard logic-level or discrete bipolar driver stages. The TO-220AB package provides 6.4 °C/W junction-to-case thermal resistance and supports up to 20 W continuous dissipation at TC = 25 °C.
Dynamic performance is characterized by 8.0 ns turn-on delay, 15 ns rise time, and 240–360 ns body diode reverse recovery time. The integral source-drain diode exhibits -5.8 V forward drop at -1.8 A, supporting synchronous rectification or freewheeling in inductive loads without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports high-side switching in 100–170 V DC bus applications with margin. |
| RDS(on) | 3.0 Ω @ VGS = -10 V - Delivers ≤3.24 W conduction loss at -1.8 A, suitable for low-duty-cycle switching. |
| Qg | 11 nC - Enables fast switching with modest gate drive strength (e.g., 10 mA peak at 10 V). |
| ID (cont.) | -1.8 A @ TC = 25 °C - Rated for thermally managed PCB-mount operation with heatsink. |
| VGS(th) | -2.0 to -4.0 V - Ensures full enhancement with -5 V or -10 V gate drive; avoids partial turn-on in noise-prone environments. |
| EAS | 5.0 mJ (repetitive) - Withstands inductive energy spikes in clamp circuits without failure. |
| RthJC | 6.4 °C/W - Allows direct thermal interface to heatsink; enables 150 °C max junction temp at ~12 W dissipation. |
Pinout & Package
IRF9610PBF-BE3 is housed in a through-hole TO-220AB package with standardized 3-pin layout and isolated tab (drain-connected). Mounting requires mechanical fastening and thermal interface material for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / Heat sink interface | Electrically connected to metal tab; must be insulated from chassis unless circuit ground reference permits. |
| Gate | Control input terminal | High-impedance MOS gate requiring <100 nA leakage control; sensitive to ESD; routed away from noisy traces. |
| Source | Reference node / Return path | Serves as common return for gate drive and load current; defines VGS reference point for biasing. |
Key Features
| Feature | Design Value |
|---|---|
| P-channel topology | Enables high-side switching without level-shifting gate drivers in negative-rail or floating-bus systems. |
| Dynamic dV/dt rating (-5.0 V/ns) | Prevents false turn-on during fast voltage transients in motor drives or SMPS snubber networks. |
| Low Qgd/Qg ratio (4.0/11 nC) | Reduces Miller effect, improving switching stability under high dV/dt conditions. |
| Integral body diode (VSD = -5.8 V @ -1.8 A) | Supports bidirectional current flow in half-bridge freewheeling paths without external diode. |
| Lead (Pb)-free and halogen-free (BE3) | Meets IPC-J-STD-609 Class 1 and IEC 61249-2-21 requirements for green electronics manufacturing. |
Applications
| Industrial Power Supply Control | DC Motor Direction Switching |
|---|---|
Use Scenario: High-side switch in 120 V DC industrial power supply enable/disable circuitry. IC Role / Device Role / Timing Role: P-channel MOSFET acting as main power rail disconnect switch with soft-start sequencing. Use Value: -200 V rating ensures 2× safety margin over nominal 120 V bus; -1.8 A rating covers control logic and auxiliary loads. |
Use Scenario: Bidirectional H-bridge leg for 24 V brushed DC motor reversal in factory automation actuators. IC Role / Device Role / Timing Role: Upper-leg P-channel switch enabling polarity reversal without bootstrap complexity. Use Value: Body diode supports continuous freewheeling during PWM dead-time; -5.8 V VSD limits conduction loss during regeneration. |
| Programmable Load Switch | Overvoltage Protection Circuit |
Use Scenario: Remote-controlled power gating of sensor modules in battery-powered IoT edge nodes. IC Role / Device Role / Timing Role: Low-quiescent current load switch controlled by microcontroller GPIO. Use Value: -2.0 to -4.0 V VGS(th) allows direct 3.3 V MCU drive via inverting buffer; 100 μA IDSS minimizes standby leakage. |
Use Scenario: Crowbar-style overvoltage clamp triggered by comparator when input exceeds 180 V. IC Role / Device Role / Timing Role: Avalanche-rated MOSFET conducting fault current to ground during transient overvoltage events. Use Value: Repetitive avalanche energy rating (5.0 mJ) sustains clamping pulses up to 10 μs duration without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | VDS = -100 V, RDS(on) = 0.2 Ω @ -10 V, ID = -23 A - Higher current, lower voltage rating. | Better suited for 48 V systems requiring higher load current; insufficient for 170 V bus protection. | Select when system voltage ≤80 V and ≥15 A switching is required; not a drop-in replacement for IRF9610PBF-BE3. |
| STP20PF06 | VDS = -60 V, RDS(on) = 0.18 Ω @ -10 V, Qg = 45 nC - Lower voltage, higher gate charge. | Optimized for 24–48 V automotive/industrial loads; unsuitable for >100 V DC applications. | Choose for cost-sensitive 24 V motor control where -200 V rating is unnecessary; requires gate driver redesign due to higher Qg. |
Compared with IRF9610PBF-BE3, IRF9540NPBF offers 12× higher current but only half the voltage rating, while STP20PF06 trades voltage headroom for lower on-resistance and higher gate drive demand-neither matches the -200 V/3.0 Ω balance critical for legacy high-voltage industrial controls.
Availability
IRF9610PBF-BE3 is available at Aetrix Electronics and suitable for industrial power supply control, DC motor direction switching, and programmable load switching requiring stable component supply across extended product lifecycles.
Supply support for IRF9610PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRF9610PBF-BE3 belongs to Vishay's legacy high-voltage P-channel MOSFET family designed for industrial control, power conversion, and protection circuits where -200 V blocking and TO-220 thermal robustness are essential.
FAQ
What is the maximum continuous drain current for IRF9610PBF-BE3 at 100 °C case temperature?
The IRF9610PBF-BE3 supports -1.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the -55 to +150 °C operating range. Designers must verify heatsink sizing using RthJC = 6.4 °C/W and ambient conditions.
Does IRF9610PBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, IRF9610PBF-BE3 integrates a source-drain body diode with -5.8 V forward voltage at -1.8 A and 240–360 ns reverse recovery time. The diode supports freewheeling in inductive loads and enables simple half-bridge topologies. Its Qrr of 1.7–2.6 μC and dI/dt capability of 100 A/μs are documented in the Diode Characteristics section.
Can IRF9610PBF-BE3 be driven directly by a 3.3 V microcontroller GPIO?
No - IRF9610PBF-BE3 has a VGS(th) range of -2.0 to -4.0 V and requires ≥-10 V for full enhancement (RDS(on) = 3.0 Ω). A 3.3 V GPIO cannot produce sufficient negative gate voltage; an inverting level shifter or dedicated gate driver (e.g., TC4427) is required to generate -10 V relative to source.
What is the avalanche energy rating of IRF9610PBF-BE3, and how is it tested?
The IRF9610PBF-BE3 is rated for repetitive single-pulse avalanche energy of 5.0 mJ, measured under conditions of ILM = -7.0 A, VDD ≤ VDS, and TJ ≤ 150 °C. Testing follows the clamped inductive test circuit (Fig. 15) with pulse width ≤300 μs and duty cycle ≤2 %, ensuring ruggedness in inductive switching faults.
How does the BE3 suffix affect the environmental compliance of IRF9610PBF-BE3?
The BE3 suffix indicates IRF9610PBF-BE3 is both lead (Pb)-free and halogen-free, conforming to IPC-J-STD-609 Class 1 and IEC 61249-2-21 standards. Unlike the PbF-only variant, BE3 eliminates brominated flame retardants and chlorine-based compounds, supporting stricter RoHS+ and REACH requirements in green manufacturing programs.
IRF9610PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 900mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 20W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF9610PBF-BE3 FAQ
1.How can I place an order for IRF9610PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9610PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9610PBF-BE3 reliable?
The price and inventory of IRF9610PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9610PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF9610PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9610PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9610PBF-BE3?
IRF9610PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9610PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9610PBF-BE3?
For technical support, including IRF9610PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9610PBF-BE3 requirements.
6.How does Aetrix verify that IRF9610PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF9610PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9610PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF9610PBF-BE3?
All IRF9610PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9610PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9610PBF-BE3 part is unused and in its original packaging.
Return procedure for IRF9610PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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