Vishay Siliconix IRF9610S

Overview

IRF9610S from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -200 V drain-source voltage, 3 Ω R_DS(on) at V_GS = -10 V, 11 nC total gate charge, and -1.8 A continuous drain current at T_C = 25 °C. It serves as a high-voltage, low-current high-side switch in DC-DC converters and industrial power supplies.

For engineers reviewing the IRF9610S datasheet, IRF9610S pinout, IRF9610S application, or IRF9610S equivalent, key selection considerations include its -200 V blocking capability, dynamic dV/dt rating of -5 V/ns, body diode reverse recovery time of 240–360 ns, and suitability for surface-mount designs requiring ruggedized switching with simple gate drive.

Technical Context

This third-generation power MOSFET uses planar silicon technology optimized for high-voltage P-channel operation. Its design integrates a fast-recovery body diode with 2.6 μC maximum Q_rr, supports linear derating up to 0.16 W/°C, and features low internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH) to minimize switching overshoot.

The device operates across -55 °C to +150 °C junction temperature range and exhibits a negative V_DS temperature coefficient (-0.23 V/°C), enabling stable parallel operation. Gate threshold voltage is specified between -2 V and -4 V, ensuring reliable turn-on with standard -10 V logic-level drive while maintaining low leakage (±100 nA I_GSS).

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (Drain, Gate, Source) with drain connected to the large metal pad on the underside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Compared with SiHF9610S-GE3, IRF9610S offers identical performance but differs in plating specification and compliance status; versus IRF9540NPbF, IRF9610S trades current capacity for critical -200 V rating and lower gate charge-making it uniquely suitable for high-voltage auxiliary switching where voltage margin and fast turn-off dominate design priorities.

Availability

IRF9610S is available at Aetrix Electronics and suitable for industrial power supplies, DC-DC converter high-side switches, and overvoltage protection circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF9610S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF9610S belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered for robust switching in industrial and automotive auxiliary power systems where voltage margin, dV/dt immunity, and surface-mount thermal efficiency are critical.

FAQ

What is the maximum continuous drain current rating for IRF9610S at 100 °C case temperature?

The IRF9610S has a continuous drain current rating of -1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the -1.8 A rating at 25 °C, based on a linear derating factor of 0.16 W/°C and R_thJC = 6.4 °C/W. Designers must ensure heatsinking maintains case temperature below this limit under full load to avoid exceeding safe operating area boundaries.

Does IRF9610S support logic-level gate drive?

The IRF9610S is not a logic-level MOSFET; its gate threshold voltage is specified from -2 V to -4 V, and full enhancement requires V_GS ≤ -10 V for guaranteed 3 Ω R_DS(on). While it may partially turn on at -5 V, datasheet parameters (e.g., R_DS(on), Q_g) are characterized only at -10 V. For true logic-level compatibility, consider Vishay's SiHF9610S variants with -3 V or -4.5 V gate drive optimization.

What is the body diode reverse recovery charge (Q_rr) of IRF9610S, and why does it matter?

The IRF9610S body diode reverse recovery charge is 1.7–2.6 μC, measured at T_J = 25 °C with I_F = -1.8 A and dI/dt = 100 A/μs. This parameter directly impacts switching losses and EMI in hard-switched topologies like buck or flyback converters-higher Q_rr increases turn-on loss in the complementary switch and can cause voltage spikes. Designers must account for it when selecting gate resistors and snubbers.

Can IRF9610S be used in parallel configurations?

Yes, the IRF9610S supports paralleling due to its negative R_DS(on) temperature coefficient (-0.23 V/°C), which promotes natural current sharing as temperature rises. However, layout symmetry-matched gate trace inductance, source inductance, and thermal coupling-is essential. The datasheet confirms "ease of paralleling" as a feature, and typical characteristics show stable transfer curves across temperature, validating balanced conduction.

What is the peak diode recovery dV/dt rating for IRF9610S, and how is it tested?

The IRF9610S has a peak diode recovery dV/dt rating of -5 V/ns, tested per the circuit in Figure 19 using controlled gate resistance (R_g) to regulate the rate of voltage reapplied across the body diode after reverse recovery. This rating ensures immunity to false turn-on during fast voltage transients in inductive switching applications, such as motor drives or relay drivers, where rapid V_DS slew could otherwise trigger unintended conduction.