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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9610STRRPBF

Name: IRF9610STRRPBF
Brand: Vishay Siliconix
SKU: IRF9610STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9610STRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9610STRRPBF.pdf

Description:: N-CHANNEL200V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9610STRRPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -200 V drain-source voltage, 3 Ω on-resistance at V_GS = -10 V, and -1.8 A continuous drain current at T_C = 25 °C. It delivers fast switching, ruggedized design, and low gate charge (11 nC) for high-voltage DC-DC converters and industrial motor control.

For engineers reviewing the IRF9610STRRPBF datasheet, IRF9610STRRPBF pinout, IRF9610STRRPBF application, or IRF9610STRRPBF equivalent, this device serves as a lead-free, halogen-free, surface-mount solution for high-side switching in offline power supplies, battery protection circuits, and programmable load switches where negative rail control and thermal robustness are critical.

Technical Context

This third-generation power MOSFET employs planar vertical DMOS technology optimized for high-voltage blocking and low conduction loss. Its gate threshold voltage range (-2 to -4 V) ensures reliable turn-on with standard logic-level gate drivers, while its dynamic dV/dt rating (-5 V/ns) supports stable operation under fast transient conditions.

The device integrates a body diode with 240–360 ns reverse recovery time and 1.7–2.6 μC reverse recovery charge, enabling use in synchronous rectification and clamped inductive switching topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports isolation of high-voltage rails up to 200 V in off-line AC/DC front-ends and HV DC bus switching.
R_DS(on)	3 Ω @ V_GS = -10 V - Enables <1.8 A continuous conduction with ≤4.86 W conduction loss at full current.
Q_g	11 nC - Reduces gate drive power and enables efficient operation at 100–500 kHz switching frequencies.
I_D (cont.)	-1.8 A @ T_C = 25 °C - Sustains rated load in PCB-mounted applications with adequate heatsinking.
T_J Range	-55 to +150 °C - Qualified for industrial and automotive under-hood environments with no derating below -40 °C.
R_thJC	6.4 °C/W - Allows direct thermal coupling to heatsink via exposed drain pad for 20 W power dissipation capability.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated gate, source, and drain terminals; thermally enhanced plastic body featuring an exposed copper drain pad for low thermal resistance and mechanical stability on FR-4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±20 V bias; 7 nC gate-source charge enables simple CMOS/TTL driver interface.
2 (D)	Drain	Main high-side power terminal; electrically connected to exposed thermal pad for simultaneous electrical and thermal conduction.
3 (S)	Source	Reference node for gate drive; tied to system ground or negative rail in high-side switch configurations.

Key Features

Feature	Design Value
P-channel topology	Enables high-side switching without level-shifting circuitry in negative-rail or floating-bus systems.
Dynamic dV/dt rating	-5 V/ns immunity prevents false turn-on during fast voltage transients in inductive loads.
Low Q_gd/Q_g ratio	4/11 ≈ 36% - Improves Miller immunity and reduces switching instability in hard-switched topologies.
Body diode soft recovery	240–360 ns trr with 1.7–2.6 μC Qrr - Minimizes voltage overshoot and EMI in flyback and buck-derived converters.

Applications

Industrial Motor Control	Offline AC/DC Power Supplies
Use Scenario: High-side switch for 24–48 V brushed DC motor direction control in PLC I/O modules. IC Role / Device Role / Timing Role: P-channel MOSFET providing bidirectional current blocking and PWM-controlled torque regulation. Use Value: -200 V rating accommodates back-EMF spikes up to 150 V; R_DS(on) = 3 Ω limits heat rise to <5 K/W at 1 A RMS.	Use Scenario: Primary-side high-voltage switch in 15–30 W flyback adapters with universal AC input. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding during each switching cycle. Use Value: 11 nC Q_g enables <500 kHz operation with <100 mW gate drive loss; dV/dt rating suppresses noise-induced shoot-through.
Battery Protection Circuits	Programmable Load Switches
Use Scenario: Reverse-polarity and overvoltage protection for 12–24 V Li-ion battery packs in portable medical devices. IC Role / Device Role / Timing Role: Series-connected P-MOSFET acting as smart disconnect switch controlled by protection IC. Use Value: -200 V V_DS withstands >100 V surge events; -4 V V_GS(th) ensures clean turn-off during fault detection.	Use Scenario: Hot-swap controller for 5–12 V auxiliary rails in telecom base station power distribution units. IC Role / Device Role / Timing Role: Controlled high-side pass element managing inrush current and steady-state load delivery. Use Value: 3 Ω R_DS(on) limits voltage drop to <36 mV at 12 mA standby; TO-263 thermal pad sustains 2 W dissipation during fault hold.

Industrial Motor Control

Offline AC/DC Power Supplies

Use Scenario: High-side switch for 24–48 V brushed DC motor direction control in PLC I/O modules.

IC Role / Device Role / Timing Role: P-channel MOSFET providing bidirectional current blocking and PWM-controlled torque regulation.

Use Value: -200 V rating accommodates back-EMF spikes up to 150 V; R_DS(on) = 3 Ω limits heat rise to <5 K/W at 1 A RMS.

Use Scenario: Primary-side high-voltage switch in 15–30 W flyback adapters with universal AC input.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding during each switching cycle.

Use Value: 11 nC Q_g enables <500 kHz operation with <100 mW gate drive loss; dV/dt rating suppresses noise-induced shoot-through.

Battery Protection Circuits

Programmable Load Switches

Use Scenario: Reverse-polarity and overvoltage protection for 12–24 V Li-ion battery packs in portable medical devices.

IC Role / Device Role / Timing Role: Series-connected P-MOSFET acting as smart disconnect switch controlled by protection IC.

Use Value: -200 V V_DS withstands >100 V surge events; -4 V V_GS(th) ensures clean turn-off during fault detection.

Use Scenario: Hot-swap controller for 5–12 V auxiliary rails in telecom base station power distribution units.

IC Role / Device Role / Timing Role: Controlled high-side pass element managing inrush current and steady-state load delivery.

Use Value: 3 Ω R_DS(on) limits voltage drop to <36 mV at 12 mA standby; TO-263 thermal pad sustains 2 W dissipation during fault hold.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9610STRR-GE3	Same die, identical R_DS(on), Q_g, and V_DS; RoHS-compliant, halogen-free construction.	No functional difference; preferred for new designs requiring full environmental compliance.	Select SiHF9610STRR-GE3 when lead-free/halogen-free certification is mandatory per IPC-1752 or EU Directive 2011/65/EU.
IRF9530NPbF	Higher R_DS(on) (0.3 Ω vs. 3 Ω), lower V_DS (-100 V), TO-220 package - not surface-mount compatible.	Suitable only for lower-voltage, through-hole prototyping; lacks D2PAK thermal performance and dV/dt rating.	Choose IRF9530NPbF only for legacy board rework or low-frequency (<50 kHz), low-power (<5 W) replacements where footprint change is acceptable.

Compared with IRF9610STRRPBF, SiHF9610STRR-GE3 offers identical electrical performance with stricter environmental compliance, while IRF9530NPbF trades voltage rating, thermal capability, and package type for higher current density at lower cost - making it unsuitable for surface-mount, high-dV/dt, or >100 V applications.

Availability

IRF9610STRRPBF is available at Aetrix Electronics and suitable for industrial motor control, offline AC/DC power supplies, and battery protection circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF9610STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability, power efficiency, and miniaturization.

The IRF9610STRRPBF belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered for ruggedized switching in industrial power conversion, motor drives, and protection systems where high dV/dt immunity and thermal stability are essential.

FAQ

What is the maximum continuous drain current for IRF9610STRRPBF at 100 °C case temperature?

The IRF9610STRRPBF supports -1.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be verified against actual PCB layout and heatsinking in the target application.

Does IRF9610STRRPBF have a built-in body diode, and what are its key parameters?

Yes, IRF9610STRRPBF integrates a monolithic body diode with typical forward voltage of -5.8 V at -1.8 A and junction temperature of 25 °C. Its reverse recovery time is 240–360 ns, and reverse recovery charge is 1.7–2.6 μC - values critical for minimizing switching losses in inductive load circuits.

Is IRF9610STRRPBF compatible with standard 5 V logic-level gate drivers?

No - IRF9610STRRPBF has a gate threshold voltage range of -2 to -4 V and requires -10 V for full enhancement (R_DS(on) = 3 Ω). While it may partially turn on with -5 V, conduction loss increases significantly; a dedicated -10 V gate driver or level shifter is recommended for reliable operation.

What is the thermal resistance from junction to case (R_thJC) for IRF9610STRRPBF?

The maximum junction-to-case thermal resistance (R_thJC) for IRF9610STRRPBF is 6.4 °C/W, measured from junction to the exposed drain pad. This value enables calculation of junction temperature rise under load and informs heatsink selection when mounting the D2PAK package to an external thermal plane.

Can IRF9610STRRPBF be paralleled with identical units for higher current handling?

Yes - IRF9610STRRPBF is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing across multiple devices. Layout symmetry, matched gate drive paths, and individual gate resistors are required to ensure balanced dynamic current distribution.

IRF9610STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 900mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 20W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9610STRRPBF FAQ

1.How can I place an order for IRF9610STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9610STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9610STRRPBF reliable?

The price and inventory of IRF9610STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9610STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF9610STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9610STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9610STRRPBF?

IRF9610STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9610STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9610STRRPBF?

For technical support, including IRF9610STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9610STRRPBF requirements.

6.How does Aetrix verify that IRF9610STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9610STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9610STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF9610STRRPBF?

All IRF9610STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9610STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9610STRRPBF part is unused and in its original packaging.

Return procedure for IRF9610STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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