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Vishay Siliconix IRF9620PBF-BE3
- Part No.:
- IRF9620PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF9620PBF-BE3.pdf
- Description:
- MOSFET P-CH 200V 3.5A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:766
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Product details
Overview
IRF9620PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -200 V drain-source voltage, 1.5 Ω RDS(on) at VGS = -10 V, and -3.5 A continuous drain current at TC = 25 °C. It serves as a high-voltage, medium-current switching element in DC-DC converters, motor control H-bridge high-side drivers, and industrial power supplies.
For engineers reviewing the IRF9620PBF-BE3 datasheet, IRF9620PBF-BE3 pinout, IRF9620PBF-BE3 application, or IRF9620PBF-BE3 equivalent, key selection criteria include verified -200 V blocking capability, gate-threshold voltage range of -2.0 to -4.0 V, body diode reverse recovery time (300–450 ns), and thermal resistance RthJC = 3.1 °C/W - all critical for reliable high-side switching in 100–200 V rail systems.
Technical Context
This third-generation Vishay power MOSFET uses planar vertical DMOS technology optimized for ruggedness and fast switching in hard-switched topologies. Its dynamic dV/dt rating (-5.0 V/ns) and specified pulsed diode recovery (dI/dt ≤ 95 A/μs) support operation in inductive load circuits without external snubbing in many cases.
The device features low gate charge (Qg = 22 nC max, Qgd = 10 nC) and moderate transconductance (gfs = 1.0 S typ), enabling efficient gate drive with standard logic-level or discrete driver ICs. Its TO-220AB package provides direct heatsink mounting via case (drain) connection and supports up to 40 W power dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports high-side switching in 100–170 V DC bus applications without derating. |
| RDS(on) | 1.5 Ω @ VGS = -10 V - Delivers ≤ 15.8 W conduction loss at -3.5 A, suitable for <50 W power stages. |
| Qg | 22 nC max - Enables <100 ns turn-on delay with 50 Ω gate resistor, reducing switching losses in 50–200 kHz designs. |
| ID (cont.) | -3.5 A @ TC = 25 °C - Rated for continuous operation in thermally managed PCB layouts with heatsink interface. |
| RthJC | 3.1 °C/W - Allows precise junction temperature estimation when mounted to heatsink with greased interface. |
| VGS(th) | -2.0 to -4.0 V - Ensures full enhancement with standard -10 V gate drive; compatible with microcontroller GPIO + level-shifter. |
| trr | 300–450 ns - Limits reverse recovery energy in freewheeling paths; requires careful layout to avoid voltage overshoot. |
Pinout & Package
IRF9620PBF-BE3 is housed in a TO-220AB package with drain-connected tab for direct heatsinking. The plastic body isolates gate and source terminals electrically from the case. Mounting torque: 10 lbf·in (1.1 N·m).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-current output node / heat transfer path | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| Gate | Control input | High-impedance MOS gate requiring <100 nA leakage current; sensitive to ESD; routed away from noisy traces. |
| Source | Reference node / return path | Common return for load current and gate drive reference; source inductance (LS = 7.5 nH) affects switching waveform fidelity. |
Key Features
| Feature | Design Value |
|---|---|
| P-channel topology | Enables high-side switching without bootstrap circuitry in DC-DC buck or half-bridge configurations. |
| Dynamic dV/dt rating | -5.0 V/ns - Confirmed immunity to false turn-on during rapid drain voltage transients in inductive loads. |
| Low Qgd/Qg ratio | 10/22 = 45% - Reduces Miller effect, improving gate drive efficiency and enabling stable operation with resistive gate drives. |
| Ruggedized construction | Specified linear SOA and repetitive avalanche rating - withstands clamped inductive switching stress per Fig. 4 and Fig. 15 test conditions. |
| Lead (Pb)-free & halogen-free | Complies with JEDEC J-STD-609A Class 2a moisture sensitivity and RoHS Directive 2011/65/EU Annex II. |
Applications
| Industrial Motor Control | DC-DC Power Conversion |
|---|---|
|
Use Scenario: High-side switch in 48–100 V brushed DC motor H-bridge driver. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled current sourcing to motor winding during forward conduction phase. Use Value: -200 V VDS rating accommodates back-EMF spikes up to 150 V; RDS(on) = 1.5 Ω limits I²R loss to <18.4 W at -3.5 A stall current. |
Use Scenario: Synchronous rectifier or high-side switch in non-isolated buck converter for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Main switching element controlling energy transfer from 120 V DC input to regulated 24 V output. Use Value: Qg = 22 nC enables clean 100 ns switching edges at 100 kHz; body diode trr = 300–450 ns allows predictable freewheeling behavior. |
| Power Supply OR-ing | AC-DC Auxiliary Supply |
|
Use Scenario: Reverse-polarity protection and OR-ing diode replacement in dual-input 24 V redundant power systems. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode in hot-swap and redundancy circuits. Use Value: RDS(on) = 1.5 Ω reduces forward drop to ~5.25 mV at 3.5 A vs. 0.4 V for diode - cutting conduction loss by >98%. |
Use Scenario: High-voltage startup switch in auxiliary flyback supply powering control ICs in 230 V AC-DC SMPS. IC Role / Device Role / Timing Role: Transient-rated switch connecting bulk capacitor to VCC rail until main controller starts. Use Value: Absolute maximum VDS = -200 V ensures margin against 300 V peak rectified line; dV/dt immunity prevents spurious turn-on during surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | VDS = -100 V, RDS(on) = 0.2 Ω @ -10 V, Qg = 85 nC - lower voltage, lower RDS(on), higher gate charge. | Not suitable for >120 V DC bus; better for 24–48 V motor control where lower conduction loss dominates. | Select IRF9540NPBF only if system VDS stress remains ≤ -80 V and gate drive strength supports 85 nC. |
| STP20PF06 | VDS = -60 V, RDS(on) = 0.18 Ω @ -10 V, Qg = 45 nC - significantly lower voltage rating and on-resistance. | Targeted at 12–24 V automotive and battery-powered systems; insufficient for industrial 100+ V rails. | Choose STP20PF06 only for cost-sensitive 24 V applications where <0.2 Ω RDS(on) justifies trade-off in voltage capability. |
Compared with IRF9620PBF-BE3, IRF9540NPBF offers lower conduction loss but fails at 150 V bus stress, while STP20PF06 delivers superior efficiency below 48 V yet cannot withstand even nominal 100 V DC link voltages - making IRF9620PBF-BE3 the sole viable option for 100–170 V high-side switching where voltage margin and ruggedness are primary constraints.
Availability
IRF9620PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and AC-DC auxiliary supply applications requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.
Supply support for IRF9620PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRF9620PBF-BE3 belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for robust performance in industrial power switching, motor drives, and high-side DC-DC regulation where voltage margin and transient immunity are critical.
FAQ
What is the maximum continuous drain current for IRF9620PBF-BE3 at 100 °C case temperature?
The IRF9620PBF-BE3 supports -2.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual board layout, heatsink interface, and ambient conditions. Designers should use RthJC = 3.1 °C/W and junction temperature limit of 150 °C to confirm safe operating area in their specific implementation.
Does IRF9620PBF-BE3 have avalanche capability, and is it rated for repetitive operation?
Yes, the IRF9620PBF-BE3 is characterized for repetitive avalanche operation per Vishay's standard test conditions (ISD ≤ -3.5 A, dI/dt ≤ 95 A/μs, VDD ≤ VDS, TJ ≤ 150 °C). Its ruggedized device design and SOA curve (Fig. 4) confirm suitability for clamped inductive switching - a key requirement in motor drive and relay driving applications where unclamped energy must be absorbed internally.
Can IRF9620PBF-BE3 be driven directly from a 3.3 V microcontroller GPIO?
No - the IRF9620PBF-BE3 has a gate threshold voltage range of -2.0 to -4.0 V and requires ≥ -10 V for guaranteed RDS(on) = 1.5 Ω. A 3.3 V GPIO cannot provide sufficient negative gate drive; a dedicated level-shifting circuit or gate driver IC (e.g., TC4427 configured for inverting high-side drive) is required to achieve full enhancement and minimize conduction loss.
What is the body diode forward voltage of IRF9620PBF-BE3 at -3.5 A and 25 °C?
The body diode forward voltage (VSD) of IRF9620PBF-BE3 is -7.0 V maximum at TJ = 25 °C, IS = -3.5 A, and VGS = 0 V. This relatively high forward drop reflects its high-voltage P-channel structure and necessitates careful evaluation in freewheeling paths - especially in synchronous rectification where external Schottky diodes may still be preferred for efficiency.
Is IRF9620PBF-BE3 suitable for use in automotive applications?
The IRF9620PBF-BE3 is not AEC-Q101 qualified and is intended for industrial, commercial, and general-purpose power applications. While its -55 to +150 °C operating temperature range meets automotive under-hood extremes, Vishay does not certify this part for automotive use due to lack of stress testing per AEC-Q101. For automotive designs, consult Vishay's AQ-series P-channel MOSFETs such as SQJ858EP.
IRF9620PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF9620PBF-BE3 FAQ
1.How can I place an order for IRF9620PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9620PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9620PBF-BE3 reliable?
The price and inventory of IRF9620PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9620PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF9620PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9620PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9620PBF-BE3?
IRF9620PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9620PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9620PBF-BE3?
For technical support, including IRF9620PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9620PBF-BE3 requirements.
6.How does Aetrix verify that IRF9620PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF9620PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9620PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF9620PBF-BE3?
All IRF9620PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9620PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9620PBF-BE3 part is unused and in its original packaging.
Return procedure for IRF9620PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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