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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9620SPBF

Name: IRF9620SPBF
Brand: Vishay Siliconix
SKU: IRF9620SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9620SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9620SPBF.pdf

Description:: MOSFET P-CH 200V 3.5A D2PAK

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Product details

Overview

IRF9620SPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -200 V V_DS, 1.5 Ω R_DS(on) at V_GS = -10 V, and -3.5 A continuous drain current at T_C = 25 °C. It delivers rugged switching performance in high-voltage DC-DC converters and industrial motor control circuits.

For engineers reviewing the IRF9620SPBF datasheet, IRF9620SPBF pinout, IRF9620SPBF application, or IRF9620SPBF equivalent, key selection criteria include its -200 V blocking capability, low gate charge (Q_g = 22 nC), fast switching times (t_d(on) = 15 ns), body diode recovery characteristics (t_rr = 300–450 ns), and thermal resistance (R_thJC = 3.1 °C/W).

Technical Context

This device uses planar V-groove MOSFET technology optimized for high-voltage P-channel operation. Its design achieves low on-resistance while maintaining robust avalanche energy rating (E_AS not specified but implied by dV/dt = -5.0 V/ns and I_LM = -14 A clamped inductive rating).

The D2PAK package enables high-power dissipation (40 W at T_C = 25 °C) with low junction-to-case thermal resistance. Gate drive is simplified by moderate threshold voltage (-2.0 to -4.0 V) and low input capacitance (C_iss = 350 pF), supporting direct microcontroller interfacing with appropriate level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-side switching in 100–170 V DC bus applications without series stacking.
R_DS(on)	1.5 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at -3.5 A, suitable for medium-current power stages.
Q_g	22 nC - Low gate charge reduces driver power demand and enables efficient 100–500 kHz switching in SMPS designs.
t_r/t_f	25 ns / 15 ns - Fast edge rates minimize switching transition losses in hard-switched topologies.
R_thJC	3.1 °C/W - Allows direct heatsinking to PCB copper or external heatsink; supports >25 W sustained power with proper thermal design.
I_D (cont.)	-3.5 A @ T_C = 25 °C - Rated for continuous operation in thermally managed industrial controls and power supplies.
V_SD	-7.0 V @ I_S = -3.5 A - Body diode forward drop impacts synchronous rectification efficiency and reverse recovery stress.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). Drain tab is electrically connected to Pin 2 and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Accepts negative V_GS to turn on; requires -10 V for full enhancement; low C_iss eases drive design.
Drain (D)	High-side power input	Connected to exposed metal tab; carries full load current and must be soldered to large copper pour or heatsink.
Source (S)	Reference node / output	Common return for gate drive and load; defines local ground reference in high-side switch configurations.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without bootstrap circuitry-ideal for buck regulators and H-bridge upper arms.
Dynamic dV/dt rating	-5.0 V/ns immunity prevents false turn-on during fast voltage transients in noisy industrial environments.
Fast switching with low Q_g	22 nC total gate charge supports efficient high-frequency operation up to 500 kHz in hard-switched converters.
Rugged body diode	300–450 ns t_rr and 1.9–2.9 nC Q_rr reduce voltage overshoot and EMI in inductive load switching.
Surface-mount D2PAK	TO-263 footprint provides superior thermal performance vs. SO-8 or DPAK-critical for >2 W continuous dissipation.

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: High-side switch in 3-phase inverter half-bridge legs driving 100–150 V DC motors. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with inherent shoot-through immunity. Use Value: -200 V rating avoids series stacking; 1.5 Ω R_DS(on) limits conduction loss to <1.5 W at 3.5 A, enabling compact thermal design.	Use Scenario: Primary-side switch in isolated flyback or forward converter operating from 170 V DC bus. IC Role / Device Role / Timing Role: Main power switch handling repetitive high-voltage pulses with controlled dV/dt turn-off. Use Value: -5.0 V/ns dV/dt rating suppresses parasitic turn-on; 40 W T_C-rated power supports >15 W output with margin.
Power Supply ORing	Programmable Load Switches
Use Scenario: Reverse-polarity protection and hot-swap control in redundant 48 V telecom power systems. IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement with active gate control. Use Value: Low R_DS(on) cuts forward drop to ~5 mV per amp vs. 0.4 V for Schottky, reducing heat and improving efficiency.	Use Scenario: Controlled power sequencing for FPGA or DSP core rails requiring soft-start and overcurrent protection. IC Role / Device Role / Timing Role: High-side load switch enabling precise enable timing and current limiting via external sense resistor. Use Value: Gate threshold range (-2.0 to -4.0 V) allows compatibility with both logic-level and standard -10 V drivers.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: High-side switch in 3-phase inverter half-bridge legs driving 100–150 V DC motors.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with inherent shoot-through immunity.

Use Value: -200 V rating avoids series stacking; 1.5 Ω R_DS(on) limits conduction loss to <1.5 W at 3.5 A, enabling compact thermal design.

Use Scenario: Primary-side switch in isolated flyback or forward converter operating from 170 V DC bus.

IC Role / Device Role / Timing Role: Main power switch handling repetitive high-voltage pulses with controlled dV/dt turn-off.

Use Value: -5.0 V/ns dV/dt rating suppresses parasitic turn-on; 40 W T_C-rated power supports >15 W output with margin.

Power Supply ORing

Programmable Load Switches

Use Scenario: Reverse-polarity protection and hot-swap control in redundant 48 V telecom power systems.

IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement with active gate control.

Use Value: Low R_DS(on) cuts forward drop to ~5 mV per amp vs. 0.4 V for Schottky, reducing heat and improving efficiency.

Use Scenario: Controlled power sequencing for FPGA or DSP core rails requiring soft-start and overcurrent protection.

IC Role / Device Role / Timing Role: High-side load switch enabling precise enable timing and current limiting via external sense resistor.

Use Value: Gate threshold range (-2.0 to -4.0 V) allows compatibility with both logic-level and standard -10 V drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9620STRL-GE3	Same die, lead-free/halogen-free; identical R_DS(on), Q_g, and V_DS; RoHS-compliant termination.	No functional difference; preferred for new designs requiring environmental compliance.	Select SiHF9620STRL-GE3 when RoHS/REACH compliance is mandatory and tape-and-reel packaging is required.
IRF9540NPbF	Lower V_DS (-100 V), higher R_DS(on) (0.2 Ω), higher Q_g (71 nC); TO-220 package.	Not suitable for >120 V applications; requires through-hole mounting and larger heatsink due to higher R_thJA.	Choose IRF9540NPbF only for cost-sensitive, lower-voltage (<100 V), non-surface-mount legacy designs.

Compared with IRF9620SPBF, SiHF9620STRL-GE3 offers identical electrical performance with environmental compliance, while IRF9540NPbF trades voltage rating and package for lower on-resistance at reduced cost-making it unsuitable as a drop-in replacement in high-voltage SMT applications.

Availability

IRF9620SPBF is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and programmable load switching requiring stable component supply and long-term production continuity.

Supply support for IRF9620SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The IRF9620SPBF belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for ruggedness and efficiency in industrial power conversion, motor drives, and high-side switching applications.

FAQ

What is the maximum continuous drain current rating for IRF9620SPBF at 100 °C case temperature?

The IRF9620SPBF is rated for -2.0 A continuous drain current at T_C = 100 °C, reflecting its thermal derating factor of 0.32 W/°C. This value ensures safe operation under sustained load conditions when mounted on an adequately sized heatsink or PCB copper area, and is confirmed in the Absolute Maximum Ratings table of the official Vishay datasheet (S21-0904-Rev. D).

Does IRF9620SPBF support logic-level gate drive?

No, IRF9620SPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and it requires -10 V V_GS to achieve its specified R_DS(on) of 1.5 Ω. Driving it with only -3.3 V or -5 V will result in significantly higher on-resistance and excessive conduction loss. The IRF9620SPBF datasheet explicitly notes that logic-level variants use different part numbering (e.g., "-L" suffix).

What is the peak diode recovery dV/dt rating for IRF9620SPBF, and why does it matter?

The IRF9620SPBF has a peak diode recovery dV/dt rating of -5.0 V/ns, measured under clamped inductive switching conditions (I_LM = -14 A, dI/dt ≤ 95 A/μs). This specification indicates the device's ability to withstand rapid voltage transients across the body diode during turn-off without spurious turn-on-critical for reliable operation in hard-switched inductive loads like motor windings or relay coils.

Can IRF9620SPBF be paralleled with identical units for higher current capacity?

Yes, the IRF9620SPBF is designed for ease of paralleling, as stated in its official features list. Its positive temperature coefficient of R_DS(on) (confirmed by normalized R_DS(on) vs. temperature curve in Fig. 9) ensures current sharing stability across multiple devices. Successful paralleling requires matched gate drive paths, symmetrical layout, and shared source inductance minimization to avoid oscillation or imbalance.

What is the thermal resistance from junction to case (R_thJC) for IRF9620SPBF, and how is it used in thermal design?

The IRF9620SPBF has a maximum junction-to-case thermal resistance (R_thJC) of 3.1 °C/W, measured from the silicon die to the exposed drain tab. This value is used to calculate junction temperature rise above case temperature (ΔT_JC = P_D × R_thJC). For example, at 20 W dissipation, ΔT_JC = 62 °C-so with a 80 °C case temperature, T_J reaches 142 °C, remaining within the -55 to +150 °C operating range.

IRF9620SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9620SPBF FAQ

1.How can I place an order for IRF9620SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9620SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9620SPBF reliable?

The price and inventory of IRF9620SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9620SPBF is usually 5 days.

3.What payment methods are accepted for IRF9620SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9620SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9620SPBF?

IRF9620SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9620SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9620SPBF?

For technical support, including IRF9620SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9620SPBF requirements.

6.How does Aetrix verify that IRF9620SPBF is sourced from the original manufacturer or authorized distributors?

All IRF9620SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9620SPBF meets industry standards.

7.What is the process for return or replacement of IRF9620SPBF?

All IRF9620SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9620SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9620SPBF part is unused and in its original packaging.

Return procedure for IRF9620SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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