Vishay Siliconix IRF9630
- Part No.:
- IRF9630
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF9630.pdf
- Description:
- MOSFET P-CH 200V 6.5A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,901
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF9630 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET designed for high-voltage switching in industrial and power conversion circuits. It features -200 V drain-source voltage rating, 0.80 Ω maximum RDS(on) at VGS = -10 V, 29 nC total gate charge, and TO-220AB package - enabling robust operation in DC-DC converters, motor controls, and relay replacement applications.
For engineers reviewing the IRF9630 datasheet, IRF9630 pinout, IRF9630 application, or IRF9630 equivalent, this page delivers verified electrical parameters, thermal performance data, body diode recovery characteristics, avalanche energy ratings, and real-world design context for high-reliability P-channel switching at up to -200 V.
Technical Context
The IRF9630 operates as a voltage-controlled unidirectional switch with gate threshold voltage between -2.0 V and -4.0 V, requiring negative gate drive relative to source. Its -200 V VDS rating and -6.5 A continuous drain current (TC = 25 °C) support high-side switching in off-line SMPS and battery-powered systems where polarity inversion is required.
It integrates a fast-recovery body diode with 200–300 ns reverse recovery time and 1.9–2.9 μC Qrr, and is rated for repetitive avalanche energy (7.4 mJ) and single-pulse avalanche (500 mJ), enabling rugged operation under inductive load switching without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - supports high-side switching in 170 V AC rectified rails and industrial 200 V DC bus systems |
| RDS(on) max | 0.80 Ω @ VGS = -10 V - enables <1.5 W conduction loss at -6.5 A, suitable for medium-power switching |
| Qg | 29 nC - determines gate driver strength requirement; compatible with standard logic-level drivers at ≤100 kHz |
| ID cont. | -6.5 A @ TC = 25 °C - defines thermal design basis using TO-220AB's 1.7 °C/W RthJC |
| EAS | 500 mJ - allows safe unclamped inductive turn-off in motor drives and solenoid control without snubber |
| dV/dt rating | -5.0 V/ns - ensures immunity to parasitic turn-on in high-dI/dt environments like half-bridge configurations |
| TJ range | -55 to +150 °C - supports extended temperature operation in automotive under-hood and industrial enclosures |
Pinout & Package
IRF9630 is housed in a TO-220AB package with standard three-terminal layout: Drain (D) connected to tab, Source (S) at lead 1, Gate (G) at lead 2 - enabling direct heatsink mounting and simplified PCB layout for high-current paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (left, viewing front) | Source (S) | Main current return path; tied to system ground or low-side reference in high-side switch configuration |
| Lead 2 (center) | Gate (G) | Control input requiring -10 V for full enhancement; isolated from power path by internal oxide dielectric |
| Tab / Lead 3 (right) | Drain (D) | High-voltage output node; electrically connected to metal tab - must be insulated from heatsink unless referenced to same potential |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports ≥6.4 A repetitive avalanche current - eliminates need for external clamping in flyback and forward converter primary switches |
| Dynamic dV/dt rating | -5.0 V/ns immunity - prevents false triggering during fast voltage transients in bridge-leg commutation |
| Fast switching | 27 ns rise time and 24 ns fall time - enables efficient operation up to 200 kHz in hard-switched topologies |
| Low gate charge | 29 nC total charge - reduces driver power dissipation and simplifies gate drive circuitry versus higher-Q alternatives |
| TO-220AB thermal performance | 1.7 °C/W RthJC - delivers 74 W power dissipation capability with minimal heatsink volume in convection-cooled designs |
Applications
| Industrial Motor Control | AC-DC Power Supply |
|---|---|
|
Use Scenario: High-side P-channel switch controlling 24–48 V DC brushed motors in PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch with integrated body diode providing freewheeling path during PWM off-time. Use Value: -200 V VDS margin accommodates back-EMF spikes; 0.80 Ω RDS(on) limits I²R losses to <3.5 W at 6.5 A. |
Use Scenario: Primary-side active clamp or synchronous rectifier in offline flyback converters. IC Role / Device Role / Timing Role: Voltage-controlled switch managing energy transfer and reset in transformer-coupled topologies. Use Value: 500 mJ EAS rating absorbs leakage inductance energy without snubber; 200 ns trr enables efficient soft-recovery operation. |
| Relay Replacement | Battery Protection Circuit |
|
Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels. IC Role / Device Role / Timing Role: Bidirectional blocking switch isolating loads during fault conditions or standby mode. Use Value: -200 V blocking capability exceeds 170 V peak rectified AC; -6.5 A ID rating covers typical 5 A relay loads. |
Use Scenario: Reverse-polarity protection and overcurrent cutoff in 12–48 V Li-ion battery packs. IC Role / Device Role / Timing Role: High-side disconnect switch activated by protection IC to isolate battery terminals. Use Value: Gate threshold of -2.0 to -4.0 V ensures reliable turn-on with standard comparator outputs; RoHS-compliant Pb-free variant available. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530PbF | VDS = -100 V, RDS(on) = 0.30 Ω @ -10 V - lower voltage rating but lower on-resistance | Not suitable for 200 V bus applications; limited to ≤100 V DC systems | Select only when operating voltage remains below 80 V and lower conduction loss is prioritized over voltage margin |
| STP12PF06 | VDS = -60 V, RDS(on) = 0.27 Ω @ -10 V, Qg = 22 nC - optimized for lower voltage, higher frequency use | Lacks avalanche rating and 200 V capability; unsuitable for off-line or industrial HV rails | Prefer for 24–48 V automotive or telecom systems where fast switching and low Qg outweigh voltage headroom needs |
Compared with IRF9530PbF and STP12PF06, the IRF9630 uniquely delivers -200 V blocking with verified repetitive avalanche capability - making it the only viable choice among the three for 170 V AC-derived supplies, industrial 200 V DC buses, and high-energy inductive load switching where voltage margin and ruggedness are non-negotiable.
Availability
IRF9630 is available at Aetrix Electronics and suitable for industrial motor control, AC-DC power supply design, relay replacement, and battery protection circuits requiring stable component supply and long-term manufacturability.
Supply support for IRF9630 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRF9630 belongs to Vishay's third-generation Power MOSFET family engineered for fast switching, low RDS(on), and enhanced avalanche ruggedness in commercial-industrial power conversion and control systems.
FAQ
What is the maximum continuous drain current for IRF9630 at 100 °C case temperature?
The IRF9630 supports -4.0 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be used in thermal design calculations alongside RthJC = 1.7 °C/W to ensure junction temperature remains ≤150 °C. The IRF9630 datasheet confirms this value under standardized test conditions with proper heatsinking.
Does IRF9630 have a fully rated avalanche capability, and what does that mean for circuit design?
Yes, the IRF9630 is explicitly rated for repetitive avalanche with IAR = -6.4 A and EAR = 7.4 mJ, and single-pulse avalanche energy of 500 mJ. This means the IRF9630 can safely absorb inductive energy during unclamped turn-off events - such as in relay driving or motor freewheeling - without requiring external clamping components. Designers may rely on this rating to simplify protection circuitry while maintaining reliability in the IRF9630-based system.
What is the gate threshold voltage range for IRF9630, and how does it affect drive requirements?
The IRF9630 has a gate threshold voltage range of -2.0 V to -4.0 V, measured at VDS = VGS and ID = -250 μA. This relatively wide range means gate drive must provide at least -10 V to ensure full enhancement and low RDS(on). Logic-level drivers are insufficient; dedicated negative-bias gate drivers or level-shifted circuits are required to reliably operate the IRF9630 across temperature and process variation.
Can IRF9630 be used in parallel configurations, and what design considerations apply?
Yes, the IRF9630 is designed for ease of paralleling, as confirmed in its Features list. Key considerations include matched gate resistors (≤2 Ω per device), symmetrical PCB layout to minimize loop inductance, and thermal coupling via shared heatsink to ensure current sharing. The positive RDS(on) temperature coefficient promotes inherent current balancing above 25 °C - a critical advantage validated in the IRF9630's transfer characteristics and thermal resistance data.
Is IRF9630 RoHS-compliant, and which variant meets this requirement?
Yes, the IRF9630PbF variant is RoHS-compliant and lead (Pb)-free, as documented in the Ordering Information section of the Vishay datasheet (Document Number: 91084). The standard IRF9630 part uses SnPb terminations and is not RoHS-compliant. For new designs requiring environmental compliance, IRF9630PbF must be specified - and its packaging, marking, and soldering profile (peak 300 °C for 10 s) are fully aligned with RoHS Directive 2011/65/EU.
IRF9630 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF9630 FAQ
1.How can I place an order for IRF9630 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9630 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9630 reliable?
The price and inventory of IRF9630 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9630 is usually 5 days.
3.What payment methods are accepted for IRF9630?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9630 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9630?
IRF9630 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9630 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9630?
For technical support, including IRF9630 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9630 requirements.
6.How does Aetrix verify that IRF9630 is sourced from the original manufacturer or authorized distributors?
All IRF9630 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9630 meets industry standards.
7.What is the process for return or replacement of IRF9630?
All IRF9630 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9630, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9630 part is unused and in its original packaging.
Return procedure for IRF9630:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF9630 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
