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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9630PBF-BE3

Name: IRF9630PBF-BE3
Brand: Vishay Siliconix
SKU: IRF9630PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9630PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9630PBF-BE3.pdf

Description:: MOSFET P-CH 200V 6.5A TO220AB

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Product details

Overview

IRF9630PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -200 V V_DS, 0.80 Ω R_DS(on) at V_GS = -10 V, and -6.5 A continuous drain current at T_C = 25 °C. It delivers ruggedized switching performance in high-voltage DC-DC converters and motor control circuits.

For engineers reviewing the IRF9630PBF-BE3 datasheet, IRF9630PBF-BE3 pinout, IRF9630PBF-BE3 application, or IRF9630PBF-BE3 equivalent, key selection criteria include its repetitive avalanche rating (7.4 mJ), fast turn-off delay (28 ns), low gate charge (29 nC), and compatibility with standard gate drivers in high-side switch topologies.

Technical Context

This device operates as a high-voltage P-channel switch with gate-threshold voltage ranging from -2.0 V to -4.0 V and exhibits negative temperature coefficient for V_DS (-0.24 V/°C). Its body diode supports reverse recovery time of 200–300 ns and Q_rr of 1.9–2.9 μC under specified conditions.

The IRF9630PBF-BE3 features dynamic dV/dt immunity up to -5.0 V/ns and is characterized for linear derating (0.59 W/°C) above 25 °C case temperature. Thermal resistance from junction-to-case is 1.7 °C/W, enabling efficient heatsink coupling in industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-side switching in 170 V DC bus systems with 15 % margin
R_DS(on) max	0.80 Ω at V_GS = -10 V - Enables ≤ 34 W conduction loss at -6.5 A full-load current
Q_g max	29 nC - Compatible with low-current gate drivers (e.g., TC4420) without external buffering
I_D continuous	-6.5 A at T_C = 25 °C - Sustains 48 W dissipation with 1.7 °C/W thermal path to heatsink
E_AS	500 mJ single-pulse - Withstands unclamped inductive energy in relay or solenoid drive circuits
dV/dt rating	-5.0 V/ns - Resists false turn-on in noisy high-dV/dt environments like motor phase legs

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration. Mounting torque: 10 lbf·in (1.1 N·m); soldering peak: 300 °C for 10 s.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heatsink interface	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
Gate	Control input for channel inversion	High-impedance node; sensitive to ESD; requires <20 V absolute gate-source rating
Source	Reference terminal for gate drive and load return	Common node for load current return and gate driver reference; defines V_GS bias point

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 7.4 mJ repeated energy absorption without degradation-critical for inductive load snubbing
Dynamic dV/dt immunity	-5.0 V/ns rating prevents spurious turn-on during fast voltage transients in half-bridge configurations
Low Q_gd/Q_g ratio	15/29 ≈ 52 % - Reduces Miller-induced switching instability and improves hard-switching robustness
Body diode with controlled Q_rr	1.9–2.9 μC reverse recovery charge - Enables predictable commutation in synchronous rectifier or freewheeling paths

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: High-side switch in 3-phase inverter half-bridge for 100–200 V DC bus servo drives. IC Role / Device Role / Timing Role: P-channel high-side power switch controlling motor phase voltage polarity and timing. Use Value: Avalanche rating and -5.0 V/ns dV/dt immunity ensure reliable operation during shoot-through fault transients and inductive kickback.	Use Scenario: Primary-side synchronous rectifier or active clamp switch in isolated flyback or forward converters. IC Role / Device Role / Timing Role: High-voltage P-channel switch managing energy transfer timing and clamping waveform shape. Use Value: 0.80 Ω R_DS(on) and 29 nC Q_g enable >92 % efficiency at 100 kHz switching with minimal gate drive loss.
Relay/Solenoid Drivers	Uninterruptible Power Supplies (UPS)
Use Scenario: Solid-state replacement for mechanical relays driving 120 V AC or 170 V DC inductive loads. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via avalanche breakdown. Use Value: 500 mJ single-pulse avalanche energy rating eliminates need for external snubbers in 10 A/120 V relay emulation.	Use Scenario: Battery backup switching and DC bus isolation in line-interactive UPS systems. IC Role / Device Role / Timing Role: High-reliability P-channel switch isolating battery bank from inverter stage during grid-fail transitions. Use Value: -55 to +150 °C operating range and RoHS/halogen-free construction support long-term field deployment in temperature-variable enclosures.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: High-side switch in 3-phase inverter half-bridge for 100–200 V DC bus servo drives.

IC Role / Device Role / Timing Role: P-channel high-side power switch controlling motor phase voltage polarity and timing.

Use Value: Avalanche rating and -5.0 V/ns dV/dt immunity ensure reliable operation during shoot-through fault transients and inductive kickback.

Use Scenario: Primary-side synchronous rectifier or active clamp switch in isolated flyback or forward converters.

IC Role / Device Role / Timing Role: High-voltage P-channel switch managing energy transfer timing and clamping waveform shape.

Use Value: 0.80 Ω R_DS(on) and 29 nC Q_g enable >92 % efficiency at 100 kHz switching with minimal gate drive loss.

Relay/Solenoid Drivers

Uninterruptible Power Supplies (UPS)

Use Scenario: Solid-state replacement for mechanical relays driving 120 V AC or 170 V DC inductive loads.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via avalanche breakdown.

Use Value: 500 mJ single-pulse avalanche energy rating eliminates need for external snubbers in 10 A/120 V relay emulation.

Use Scenario: Battery backup switching and DC bus isolation in line-interactive UPS systems.

IC Role / Device Role / Timing Role: High-reliability P-channel switch isolating battery bank from inverter stage during grid-fail transitions.

Use Value: -55 to +150 °C operating range and RoHS/halogen-free construction support long-term field deployment in temperature-variable enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	V_DS = -100 V, R_DS(on) = 0.20 Ω @ -10 V, Q_g = 81 nC	Lower voltage rating; higher gate charge; better conduction but unsuitable above 100 V bus	Select when lower on-resistance is prioritized over voltage headroom and gate drive simplicity
STP9PF10	V_DS = -100 V, R_DS(on) = 0.22 Ω @ -10 V, E_AS = 220 mJ	Half the avalanche energy; no documented dV/dt rating; TO-220FP variant available	Choose for cost-sensitive 100 V designs where avalanche stress is minimal and footprint flexibility matters

Compared with IRF9630PBF-BE3, IRF9540NPbF offers lower conduction loss but sacrifices 100 V voltage margin and increases gate drive demand, while STP9PF10 reduces cost and package height but lacks verified dV/dt immunity and avalanche endurance for demanding inductive switching.

Availability

IRF9630PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and relay/solenoid driver applications requiring stable component supply and long-lifecycle support.

Supply support for IRF9630PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedized design.

The IRF9630PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for high-voltage industrial switching where avalanche capability, dV/dt immunity, and thermal stability are critical.

FAQ

What is the maximum gate-source voltage rating for IRF9630PBF-BE3?

The IRF9630PBF-BE3 has a maximum gate-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits-especially those using bootstrap or level-shifted supplies-clamp V_GS within this range. The IRF9630PBF-BE3 gate leakage remains below ±100 nA at ±20 V, confirming robust oxide integrity under rated bias.

Does IRF9630PBF-BE3 support avalanche operation in repetitive mode?

Yes, the IRF9630PBF-BE3 is explicitly rated for repetitive avalanche with I_AR = -6.4 A and E_AR = 7.4 mJ. This capability is validated per test condition b (V_DD = -50 V, L = 17 mH, R_g = 25 Ω) and enables reliable operation in inductive switching without external protection. The IRF9630PBF-BE3 datasheet confirms pulse width is limited by junction temperature, not device failure.

What is the thermal resistance from junction to case for IRF9630PBF-BE3?

The maximum junction-to-case thermal resistance (R_thJC) for IRF9630PBF-BE3 is 1.7 °C/W. This value applies to the drain (tab) interface and assumes proper mounting with thermal grease on a flat, greased heatsink surface. The IRF9630PBF-BE3 achieves 74 W maximum power dissipation at T_C = 25 °C, consistent with this thermal path.

Is IRF9630PBF-BE3 lead-free and halogen-free?

Yes, IRF9630PBF-BE3 is both lead-free and halogen-free, as indicated by the "-BE3" suffix per Vishay's ordering nomenclature. It complies with JEDEC JS709B and IPC-1752A material declarations. The IRF9630PBF-BE3 replaces legacy Pb-bearing variants while maintaining identical electrical and thermal performance.

How does the body diode performance of IRF9630PBF-BE3 compare to standard rectifiers?

The IRF9630PBF-BE3 body diode has V_SD = -6.5 V at -6.5 A and T_J = 25 °C, with t_rr = 200–300 ns and Q_rr = 1.9–2.9 μC. While slower and higher-drop than dedicated Schottky rectifiers, its parameters are optimized for synchronous rectification and freewheeling in medium-frequency switching. The IRF9630PBF-BE3 body diode is integral to its safe operation in bridge configurations.

IRF9630PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 800mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9630PBF-BE3 FAQ

1.How can I place an order for IRF9630PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9630PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9630PBF-BE3 reliable?

The price and inventory of IRF9630PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9630PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF9630PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9630PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9630PBF-BE3?

IRF9630PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9630PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9630PBF-BE3?

For technical support, including IRF9630PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9630PBF-BE3 requirements.

6.How does Aetrix verify that IRF9630PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF9630PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9630PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF9630PBF-BE3?

All IRF9630PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9630PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9630PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF9630PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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