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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9630S

Name: IRF9630S
Brand: Vishay Siliconix
SKU: IRF9630S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9630S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9630S.pdf

Description:: MOSFET P-CH 200V 6.5A D2PAK

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Product details

Overview

IRF9630S from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -200 V drain-source voltage, 0.80 Ω R_DS(on) at V_GS = -10 V, and -6.5 A continuous drain current at T_C = 25 °C. It delivers ruggedized switching performance in high-voltage DC-DC converters and industrial motor control circuits.

For engineers reviewing the IRF9630S datasheet, IRF9630S pinout, IRF9630S application, or IRF9630S equivalent, key selection criteria include its -200 V blocking capability, repetitive avalanche rating (7.4 mJ), fast turn-off delay (28 ns), low gate charge (29 nC), and suitability for surface-mount high-current switching where thermal management via PCB copper area is critical.

Technical Context

This device uses third-generation planar vertical DMOS technology optimized for high-voltage P-channel operation. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard logic-level gate drivers while maintaining low leakage (±100 nA I_GSS) and tight V_DS temperature coefficient (-0.24 V/°C).

The IRF9630S integrates a robust body diode with 200–300 ns reverse recovery time and 1.9–2.9 μC Q_rr, enabling unclamped inductive switching in flyback and synchronous rectifier topologies. Its D2PAK package provides 1.7 °C/W junction-to-case thermal resistance and supports up to 2.0 W dissipation in typical surface-mount layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-side switching in 100–150 V bus systems with 30 % safety margin.
R_DS(on)	0.80 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at -6.5 A, reducing heatsink requirements.
Q_g	29 nC - Low gate drive energy allows use with low-power gate drivers and reduces switching losses at 100 kHz+.
E_AS	500 mJ - Withstands single-pulse inductive energy without external snubbers in relay driving or solenoid control.
T_J Range	-55 to +150 °C - Qualified for industrial ambient environments and sustained operation at elevated case temperatures.
dV/dt Rating	-5.0 V/ns - Resists false triggering during high-speed voltage transients in noisy power systems.
I_D (T_C = 100 °C)	-4.0 A - Maintains usable current capacity in compact enclosures with limited airflow.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Dimensions per JEDEC outline: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), 3-pin configuration (G-S-D), drain tab occupies full rear surface.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Accepts -10 V gate drive to fully enhance; threshold range (-2.0 to -4.0 V) enables compatibility with microcontroller GPIO or dedicated P-channel drivers.
Source (S)	Reference node / return path	Connected to high-side rail or load common; internal source inductance (7.5 nH) impacts diode recovery behavior and layout-sensitive ringing.
Drain (D)	Power output terminal	Exposed metal pad soldered to PCB copper pour; carries full load current and serves as primary thermal path (R_thJC = 1.7 °C/W).

Key Features

Feature	Design Value
Repetitive avalanche rated	7.4 mJ per pulse - Enables reliable operation in inductive load switching without external clamping components.
Dynamic dV/dt immunity	-5.0 V/ns - Prevents spurious turn-on during fast voltage transitions in high-noise industrial environments.
Low R_DS(on) × Q_g figure of merit	23.2 Ω·nC - Balances conduction and switching losses for optimal efficiency in 50–200 kHz SMPS designs.
Fast switching speed	28 ns turn-off delay + 24 ns fall time - Reduces dead-time losses in synchronous buck or half-bridge configurations.
Surface-mount packaging	D2PAK footprint - Supports automated assembly and high-power density layouts with direct thermal coupling to PCB copper.

Applications

High-Voltage DC-DC Converters	Industrial Motor Control
Use Scenario: Step-down conversion from 120–180 V DC input to 24 V output in telecom power supplies. IC Role / Device Role / Timing Role: High-side P-channel switch in non-synchronous buck topology, operating at 100 kHz with 30 % duty cycle. Use Value: -200 V V_DS rating ensures margin against line surges; 0.80 Ω R_DS(on) limits conduction loss to <1.5 W at full load.	Use Scenario: Directional control of 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Half-bridge high-side switch enabling bidirectional current flow with PWM-based speed regulation. Use Value: Repetitive avalanche rating absorbs back-EMF spikes during motor commutation; -5.0 V/ns dV/dt immunity prevents shoot-through.
Relay/Solenoid Drivers	Uninterruptible Power Supplies
Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC dampers or pneumatic valves. IC Role / Device Role / Timing Role: Single-pole high-side switch handling inductive loads up to 6.5 A with controlled turn-off. Use Value: 500 mJ single-pulse avalanche energy eliminates need for external flyback diodes; fast fall time (<24 ns) minimizes contact arcing.	Use Scenario: Battery backup switching in offline UPS systems managing 48 V battery banks and AC line inputs. IC Role / Device Role / Timing Role: Isolation switch between battery and inverter stage, activated during grid failure detection. Use Value: -55 to +150 °C operating range supports wide ambient conditions; RoHS-compliant Pb-free variant (IRF9630STRLPbF) meets regulatory compliance.

High-Voltage DC-DC Converters

Industrial Motor Control

Use Scenario: Step-down conversion from 120–180 V DC input to 24 V output in telecom power supplies.

IC Role / Device Role / Timing Role: High-side P-channel switch in non-synchronous buck topology, operating at 100 kHz with 30 % duty cycle.

Use Value: -200 V V_DS rating ensures margin against line surges; 0.80 Ω R_DS(on) limits conduction loss to <1.5 W at full load.

Use Scenario: Directional control of 24–48 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: Half-bridge high-side switch enabling bidirectional current flow with PWM-based speed regulation.

Use Value: Repetitive avalanche rating absorbs back-EMF spikes during motor commutation; -5.0 V/ns dV/dt immunity prevents shoot-through.

Relay/Solenoid Drivers

Uninterruptible Power Supplies

Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC dampers or pneumatic valves.

IC Role / Device Role / Timing Role: Single-pole high-side switch handling inductive loads up to 6.5 A with controlled turn-off.

Use Value: 500 mJ single-pulse avalanche energy eliminates need for external flyback diodes; fast fall time (<24 ns) minimizes contact arcing.

Use Scenario: Battery backup switching in offline UPS systems managing 48 V battery banks and AC line inputs.

IC Role / Device Role / Timing Role: Isolation switch between battery and inverter stage, activated during grid failure detection.

Use Value: -55 to +150 °C operating range supports wide ambient conditions; RoHS-compliant Pb-free variant (IRF9630STRLPbF) meets regulatory compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	-100 V V_DS, 0.30 Ω R_DS(on), 14 nC Q_g - Lower voltage rating, lower on-resistance, faster switching.	Not suitable for >120 V bus systems; better for 24–48 V industrial controls where lower conduction loss is prioritized.	Select IRF9530NPbF only when system V_DS stress remains below -100 V; IRF9630S remains required for 200 V-class designs.
SiHF9630S-E3	Identical electrical specs and D2PAK package; Pb-free and halogen-free construction per JEDEC JS709A.	No functional difference; used where RoHS/REACH compliance is mandatory and lead-free soldering is employed.	SiHF9630S-E3 is a direct material-compliance alternative to IRF9630S; both share identical thermal and switching performance.

Compared with IRF9630S, IRF9530NPbF offers lower R_DS(on) and gate charge but sacrifices 100 V of blocking capability, limiting use to sub-120 V applications; SiHF9630S-E3 matches all electrical parameters while meeting stricter environmental standards-making it a drop-in compliance upgrade rather than a performance alternative.

Availability

IRF9630S is available at Aetrix Electronics and suitable for high-voltage DC-DC converters, industrial motor control systems, and relay/solenoid driver modules requiring stable component supply across extended production lifecycles.

Supply support for IRF9630S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRF9630S belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered for industrial-grade switching in harsh environments where avalanche robustness and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRF9630S at 100 °C case temperature?

The IRF9630S supports -4.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual PCB copper area and ambient conditions. The IRF9630S maintains safe operation within its SOA curve up to this current level when mounted on a 1" square FR-4 PCB.

Does IRF9630S have avalanche capability, and how is it rated?

Yes, the IRF9630S is repetitively avalanche rated with 7.4 mJ per pulse and single-pulse avalanche energy of 500 mJ. These values are measured under defined test conditions (V_DD = -50 V, I_AS = -6.5 A, L = 17 mH, R_g = 25 Ω) and allow the IRF9630S to safely absorb inductive energy without external protection in properly designed circuits.

What is the gate threshold voltage range for IRF9630S, and why does it matter?

The IRF9630S has a gate threshold voltage range of -2.0 V to -4.0 V at I_D = -250 μA. This range ensures predictable turn-on behavior across temperature and process variation, allowing compatibility with both standard -10 V gate drivers and partial logic-level drive schemes. Designers must ensure gate drive stays within ±20 V absolute maximum to avoid damage to the IRF9630S.

Can IRF9630S be paralleled with other devices, and what design considerations apply?

Yes, the IRF9630S is designed for ease of paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing. To ensure stable operation, use matched gate resistors (≤12 Ω), minimize source inductance asymmetry, and implement individual gate resistors per device. Layout symmetry is critical-uneven thermal coupling or trace length differences can cause current imbalance in parallel IRF9630S configurations.

What is the thermal resistance from junction to case for IRF9630S, and how does it impact heatsinking?

The IRF9630S has a maximum junction-to-case (drain) thermal resistance of 1.7 °C/W. This low value means efficient heat transfer from the die to the PCB copper pour or external heatsink attached to the drain pad. For example, at 74 W maximum power dissipation, a 1.7 °C/W R_thJC implies ~126 °C junction rise above case temperature-requiring careful thermal design to stay within the 150 °C T_J limit. The IRF9630S achieves this via its exposed D2PAK drain tab.

IRF9630S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9630S FAQ

1.How can I place an order for IRF9630S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9630S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9630S reliable?

The price and inventory of IRF9630S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9630S is usually 5 days.

3.What payment methods are accepted for IRF9630S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9630S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9630S?

IRF9630S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9630S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9630S?

For technical support, including IRF9630S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9630S requirements.

6.How does Aetrix verify that IRF9630S is sourced from the original manufacturer or authorized distributors?

All IRF9630S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9630S meets industry standards.

7.What is the process for return or replacement of IRF9630S?

All IRF9630S units undergo pre-shipment inspection (PSI). If there is an issue with IRF9630S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9630S part is unused and in its original packaging.

Return procedure for IRF9630S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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