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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9640

Name: IRF9640
Brand: Vishay Siliconix
SKU: IRF9640
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9640

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9640.pdf

Description:: MOSFET P-CH 200V 11A TO220AB

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Product details

Overview

IRF9640 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET designed for high-voltage switching applications in industrial and commercial power supplies, motor controls, and DC-DC converters. It features -200 V drain-source voltage rating, 0.50 Ω R_DS(on) at V_GS = -10 V, 125 W maximum power dissipation at T_C = 25 °C, and repetitive avalanche energy rating of 13 mJ - enabling robust operation under inductive load switching.

For engineers reviewing the IRF9640 datasheet, IRF9640 pinout, IRF9640 application, or IRF9640 equivalent, key selection considerations include its TO-220AB package thermal performance (R_thJC = 1.0 °C/W), gate charge profile (Q_g = 44 nC), body diode recovery characteristics (t_rr = 250–300 ns), and -11 A continuous drain current capability at T_C = 25 °C.

Technical Context

This device operates as a voltage-controlled unidirectional switch with negative gate threshold (-2.0 to -4.0 V) and exhibits low gate leakage (±100 nA at ±20 V). Its dynamic parameters - including C_iss = 1200 pF, C_oss = 370 pF, and Crss = 81 pF - support predictable high-frequency switching up to several hundred kHz when driven with appropriate gate resistance.

The IRF9640 integrates a fast-recovery body diode (V_SD = -5 V at I_S = -11 A, t_rr = 250–300 ns) and is rated for peak diode recovery dV/dt of -5.0 V/ns. Its ruggedized construction includes repetitive avalanche capability (I_AR = -11 A, E_AR = 13 mJ) and linear derating factor of 1.0 W/°C above 25 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - supports high-side switching in 100–170 VAC rectified bus applications without derating.
R_DS(on)	0.50 Ω @ V_GS = -10 V - enables <1.5 W conduction loss at -6.6 A DC current, suitable for medium-power SMPS.
Q_g	44 nC - requires ~0.44 mJ gate drive energy per switch cycle at 10 V swing; dictates gate driver current capability.
t_r/t_f	43 ns / 38 ns - supports clean 500 kHz PWM operation with minimal overlap loss when paired with ≤9.1 Ω gate resistor.
I_D (cont.)	-11 A @ T_C = 25 °C - delivers 125 W dissipation with heatsink; derates to -6.8 A at 100 °C case temperature.
E_AS	700 mJ single-pulse - protects against transient inductive kickback in relay/motor drive circuits without external snubber.
T_J range	-55 to +150 °C - qualified for industrial ambient environments and automotive under-hood auxiliary systems.

Pinout & Package

IRF9640 is housed in a TO-220AB package with standard three-terminal configuration: Drain (D) connected to the metal tab for direct heatsinking, Source (S) and Gate (G) on insulated leads. The package provides low thermal resistance (R_thJC = 1.0 °C/W) and mechanical compatibility with industry-standard mounting hardware (6-32 or M3 screw, 1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output node	Electrically connected to metal tab; must be isolated from chassis unless referenced to system ground; primary heat path to heatsink.
Source	Reference terminal for gate control	Common return path for load current; defines V_GS reference; tied to negative rail in high-side switch configurations.
Gate	Voltage-controlled input	High-impedance control node requiring <±100 nA leakage budget; sensitive to ESD; requires gate resistor (typically 9.1–47 Ω) for ringing suppression.

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands -11 A repetitive avalanche current and 13 mJ energy without degradation - eliminates need for external clamping in flyback or buck-boost topologies.
Dynamic dV/dt rating	Rated for -5.0 V/ns peak diode recovery dV/dt - prevents false turn-on during fast inductive transients in motor drive half-bridges.
Fast switching	43 ns rise time and 38 ns fall time enable efficient operation at 200–500 kHz switching frequencies with minimal switching loss.
TO-220AB package	Industry-standard outline with 1.0 °C/W junction-to-case thermal resistance - allows direct bolt-down heatsinking and simplifies thermal management.
RoHS-compliant Pb-free variant	IRF9640PbF version meets Directive 2011/65/EU - supports lead-free reflow assembly and environmental compliance for global OEM programs.

Applications

Industrial Power Supply	DC Motor Control
Use Scenario: High-side switch in 120 VAC-input offline flyback converter secondary synchronous rectification or auxiliary bias supply. IC Role / Device Role / Timing Role: P-channel MOSFET operating as controlled high-side switch with gate driven by isolated transformer-coupled signal. Use Value: -200 V V_DS rating accommodates reflected voltage spikes; 0.50 Ω R_DS(on) reduces conduction loss in 5–10 W auxiliary rails.	Use Scenario: Directional control and braking in 24–48 V brushed DC motor H-bridge drivers. IC Role / Device Role / Timing Role: Upper-leg switch in dual-MOSFET half-bridge; body diode conducts reverse current during PWM off-time. Use Value: 250–300 ns body diode recovery time minimizes shoot-through risk; -5 V V_SD drop ensures low-loss freewheeling.
Uninterruptible Power Systems	LED Driver Circuits
Use Scenario: Battery disconnect and reverse polarity protection in 48 V telecom UPS backup modules. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode or hot-swap controller with gate driven by dedicated supervisor IC. Use Value: -100 μA I_DSS at -200 V ensures negligible leakage during standby; -55 to +150 °C rating supports wide ambient operation.	Use Scenario: Dimming switch and overcurrent protection in constant-current LED string drivers for signage and architectural lighting. IC Role / Device Role / Timing Role: Series pass element modulated via PWM or analog gate voltage to regulate LED current. Use Value: 44 nC Q_g enables precise dimming resolution at 1–10 kHz; 125 W PD supports >10 A pulsed LED loads with heatsink.

Industrial Power Supply

DC Motor Control

Use Scenario: High-side switch in 120 VAC-input offline flyback converter secondary synchronous rectification or auxiliary bias supply.

IC Role / Device Role / Timing Role: P-channel MOSFET operating as controlled high-side switch with gate driven by isolated transformer-coupled signal.

Use Value: -200 V V_DS rating accommodates reflected voltage spikes; 0.50 Ω R_DS(on) reduces conduction loss in 5–10 W auxiliary rails.

Use Scenario: Directional control and braking in 24–48 V brushed DC motor H-bridge drivers.

IC Role / Device Role / Timing Role: Upper-leg switch in dual-MOSFET half-bridge; body diode conducts reverse current during PWM off-time.

Use Value: 250–300 ns body diode recovery time minimizes shoot-through risk; -5 V V_SD drop ensures low-loss freewheeling.

Uninterruptible Power Systems

LED Driver Circuits

Use Scenario: Battery disconnect and reverse polarity protection in 48 V telecom UPS backup modules.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode or hot-swap controller with gate driven by dedicated supervisor IC.

Use Value: -100 μA I_DSS at -200 V ensures negligible leakage during standby; -55 to +150 °C rating supports wide ambient operation.

Use Scenario: Dimming switch and overcurrent protection in constant-current LED string drivers for signage and architectural lighting.

IC Role / Device Role / Timing Role: Series pass element modulated via PWM or analog gate voltage to regulate LED current.

Use Value: 44 nC Q_g enables precise dimming resolution at 1–10 kHz; 125 W PD supports >10 A pulsed LED loads with heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540N	R_DS(on) = 0.20 Ω @ V_GS = -10 V (lower on-resistance); V_DS = -100 V (halved voltage rating)	Better suited for 48 V systems where lower conduction loss is critical; unsuitable for 170 V rectified bus designs.	Select IRF9540N only if system V_DS stress remains below -100 V and thermal margin permits higher current density.
STP12P20	V_DS = -200 V (same); R_DS(on) = 0.28 Ω @ V_GS = -10 V; Q_g = 52 nC (higher gate charge)	Offers lower on-resistance but increased switching loss due to higher Q_g; different pinout (TO-220FP variant available).	Prefer STP12P20 when conduction loss dominates design and gate drive can support 52 nC; verify mechanical fit for TO-220AB footprint.

Compared with IRF9540N and STP12P20, the IRF9640 provides optimal balance of 200 V rating, moderate R_DS(on), and manageable Q_g for cost-sensitive industrial switching where both voltage headroom and thermal predictability are required.

Availability

IRF9640 is available at Aetrix Electronics and suitable for industrial power supplies, DC motor controllers, uninterruptible power systems, and LED driver circuits requiring stable component supply across multi-year production cycles.

Supply support for IRF9640 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF9640 belongs to Vishay's third-generation Power MOSFET family engineered for ruggedized switching in commercial-industrial power conversion - emphasizing avalanche robustness, fast switching, and thermal efficiency in TO-220 packages.

FAQ

What is the maximum continuous drain current rating for the IRF9640 at 100 °C case temperature?

The IRF9640 supports -6.8 A continuous drain current at T_C = 100 °C, derived from its 125 W maximum power dissipation and linear derating factor of 1.0 W/°C. This value is confirmed in the Absolute Maximum Ratings table and validated by thermal resistance data (R_thJC = 1.0 °C/W). Designers must ensure heatsink interface resistance and ambient conditions maintain case temperature ≤100 °C to sustain this current in the IRF9640.

Does the IRF9640 have a built-in body diode, and what are its key parameters?

Yes, the IRF9640 integrates a monolithic body diode formed by the MOSFET's inherent p-n junction. Key parameters include -5 V forward voltage at -11 A and 25 °C, reverse recovery time of 250–300 ns at 25 °C, and reverse recovery charge of 2.9–3.6 μC. These values are measured under specified test conditions (IF = -11 A, dI/dt = 100 A/μs) and directly impact performance in freewheeling and synchronous rectification applications using the IRF9640.

What is the gate threshold voltage range for the IRF9640, and how does it affect drive requirements?

The IRF9640 has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA, meaning it begins conducting significantly between these voltages. Full enhancement requires V_GS ≤ -10 V to achieve R_DS(on) = 0.50 Ω. This threshold range confirms compatibility with standard -12 V or -15 V logic-level gate drivers, and the IRF9640 does not require specialized low-threshold drive circuitry.

Can the IRF9640 be used in avalanche mode, and what are its rated avalanche capabilities?

Yes, the IRF9640 is explicitly rated for repetitive avalanche operation: -11 A repetitive avalanche current (I_AR) and 13 mJ repetitive avalanche energy (E_AR). Single-pulse capability is 700 mJ (E_AS). These ratings are validated per test condition b in the datasheet (V_DD = -50 V, L = 8.7 mH, R_g = 25 Ω). Designers may rely on these specifications for inductive load switching without external clamping when using the IRF9640.

What is the thermal resistance from junction to case (R_thJC) for the IRF9640, and how does it influence heatsink selection?

The IRF9640 has a maximum junction-to-case thermal resistance (R_thJC) of 1.0 °C/W, measured from die to the TO-220AB metal tab. This low value enables efficient heat transfer to an external heatsink. When designing thermal management, total system resistance (R_thJA = 62 °C/W max) includes interface resistance (R_thCS = 0.50 °C/W typical) and heatsink resistance; the IRF9640's R_thJC allows compact heatsinks for 125 W dissipation at T_C = 25 °C.

IRF9640 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9640 FAQ

1.How can I place an order for IRF9640 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9640 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9640 reliable?

The price and inventory of IRF9640 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9640 is usually 5 days.

3.What payment methods are accepted for IRF9640?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9640 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9640?

IRF9640 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9640 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9640?

For technical support, including IRF9640 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9640 requirements.

6.How does Aetrix verify that IRF9640 is sourced from the original manufacturer or authorized distributors?

All IRF9640 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9640 meets industry standards.

7.What is the process for return or replacement of IRF9640?

All IRF9640 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9640, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9640 part is unused and in its original packaging.

Return procedure for IRF9640:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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